• Title/Summary/Keyword: AA6111-T4

Search Result 4, Processing Time 0.019 seconds

Analysis of Failure Phenomena in Uni-axial Tension Tests of Friction Stir Welded AA6111-T4, AA5083-H18 and DP-Steel (마찰교반용접(FSW) 된 알루미늄 합금(AA6111-T4, AA5083-H18) 및 DP강 판재의 인장 실험시 파단 현상 해석)

  • Park, S.;Um, K.;Ma, N.;Ahn, K.;Chung, K.H.;Kim, Chong-Min;Okamoto, Kazutaka;Wagoner, R.H.;Chung, K.
    • Transactions of Materials Processing
    • /
    • v.16 no.4 s.94
    • /
    • pp.304-308
    • /
    • 2007
  • Failure phenomena in uni-axial tension test were experimentally and numerically investigated for AA6111-T4, AA5083-H18 and DP-Steel, which were friction-stir welded with the same and different thicknesses. Forming limit diagram(FLD) was measured using hemispherical dome stretching tests for base materials and also predicted by Hill's bifurcation and M-K theories for welded areas. Finite element simulations well predicted hardening behaviors, failure locations as well as failure patterns for the uni-axial tension tests especially utilizing very fine meshes and FLD along with stress softening.

Analysis of Failure Phenomena in Uni-axial Tension Tests of Friction Stir Welded AA6111-T4, AA5083-H18 and DP-Steel (마찰교반용접(FSW) 된 알루미늄 합금(AA6111-T4, AA5083-H18) 및 DP강 판재의 인장 실험시 파단 현상 해석)

  • Park, S.;Um, K.;Ma, N.;Ahn, K.;Chung, K.H.;Kim, Chong-Min;Okamoto, Kazutaka;Wagoner, R.H.;Chung, K.
    • Proceedings of the Korean Society for Technology of Plasticity Conference
    • /
    • 2007.05a
    • /
    • pp.258-261
    • /
    • 2007
  • Failure phenomena in uni-axial tension test were experimentally and numerically investigated for AA6111-T4, AA5083-H18 and DP-Steel, which were friction-stir welded with the same and different thicknesses. Forming limit diagram(FLD) was measured using hemispherical dome stretching tests for base materials and also predicted by Hill's bifurcation and M-K theories for welded areas. Finite element simulations well predicted hardening behaviors, failure locations as well as failure patterns for the uni-axial tension tests especially utilizing very fine meshes and FLD along with stress softening.

  • PDF

Experimental Formability Investigation for FSW Sheets with Respect to Base Material's Directional Combination (모재의 방향성에 따른 마찰교반용접 판재의 성형성에 관한 실험적 연구)

  • Kim, Dae-Yong;Lee, Won-Oh;Kim, June-Hyung;Kim, Chong-Min;Chung, Kwan-Soo
    • Transactions of Materials Processing
    • /
    • v.18 no.1
    • /
    • pp.73-79
    • /
    • 2009
  • In order to investigate the formability of friction stir welded(FSW) tailor welded blanks(TWB) with respect to the base material's directional combination, aluminum alloy AA6111-T4 sheets were welded with three different conjoining types: RD-RD, TD-RD and TD-TD. Here, RD and TD represent rolling and transverse directions, respectively. For experimental formability study, three tests with gradual complexity were performed: the simple tension test with various weld line directions for uni-axial elongation, the hemisphere dome stretching test for biaxial stretching and the cylindrical cup deep drawing test. As a result, all three forming tests showed that RD-RD type samples exhibited the best formability, while TD-TD type sheets showed the least formability performance.

Growth and optical properties for MgGa2Se4 single crystal thin film by hot wall epitaxy (Hot wall epitaxy법에 의한 MgGa2Se4 단결정 박막 성장과 광학적 특성)

  • Moon, Jong-Dae;Hong, Kwang-Joon
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.21 no.3
    • /
    • pp.99-104
    • /
    • 2011
  • A stoichiometric mixture of evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. The crystal structure of these compounds has a rhombohedral structure with lattice constants $a_0=3.953\;{\AA}$, $c_0=38.890\;{\AA}$. To obtain the single crystal thin films, $MgGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the double crystal X-ray rocking curve and X-ray diffraction ${\omega}-2{\theta}$ scans. The carrier density and mobility of $MgGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method were $6.21{\times}10^{18}\;cm^{-3}$ and 248 $cm^2/v{\cdot}s$ at 293 K, respectively. The optical absorption of $MgGa_2Se_4$ single crystal thin films was investigated in the temperature range from 10 K to 293 K. The temperature dependence of the optical energy gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's equation, $E_g(T)=E_g(0)-({\alpha}T^2/T+{\beta})$. The constants of Varshni's equation had the values of $E_g(0)=2.34\;eV$, ${\alpha}=8.81{\times}10^{-4}\;eV/K$ and ${\beta}=251\;K$, respectively.