• Journal of the Korean Vacuum Society
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• v.3 no.4
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• pp.442-448
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• 1994

용액분무법으로 RuO2 박막을 석영 기판위에 성장시켰다. RuO2 박막의 결정구조는 정방 구조이 며 격자상수 a0=4.508 A, c0=3.092 A 이였다. RuO2 박막은 금속성 전도성을 나타냈다. RuO2박마의 광흡 수도는 후열처리함에 따라 증가하였고 박막의 광흡수도의 최소값은 후열처리 온도에 의존하지 않으며 에너지로 환산하면 ∼2.0eV로 거의 일정하였다. RuO2 박막의 후열처리의 온도와 후열처리 분위기가 기 판위에 성장된 RuO2 박막의 표면형태 grain 크기 grain 경계폭 전기적특성등에 영향을 미쳤다. RuO2 박 막이 실험실내의 공기중에 노출됨으로서 시료의 표면에 S와 C가 물리 흡착되었으며 sputtering 시간이 증가함에 따라 Ar+ 이온 빔의 충겨으로 RuO2가 부분적으로 환원되어 O원자의 피크 대 피크 높이가 감 소하여 O/Ru 의피크 높이의 비가 낮게 관측되었다.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1095-1096
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• 2006

When $Y_2O_3$ was added to Ti-excess $BaTiO_3$ ((Ba+Y)/Ti =1), the area occupied by $Y^{3+}$ ion was confirmed by its microstructure development, electrical conductivity behavior and lattice constant. Grain growth inhibition was observed when the content of donor dopant exceeded a critical value ($x{\approx}.0.01$) in $BaTiO_3+x(0.5Y_2O_3+TiO_2)$ system. A donor-doped behavior was observed at various Y contents ($0.2\sim3.0$ mol% Y) when $Y_2O_3$ was added to $TiO_2$-excess $BaTiO_3$. As Y content was increased, (002) and (200) peaks shifted to higher angles and the lattice constant (a and c axis) decreased gradually.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.682-683
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• 2006

Thermoelectric conversion efficiency of thermoelectric elements can be increased by using a structure combining n-type and p-type semiconductors. From the above point of view, attention was directed at ZnO as a candidate n-type semiconductor material and investigations were made. As the result, a dimensionless figure of merit ZT close to 0.28 (1073K) was obtained for specimens produced by the PCS (Pulse Current Sintering) method with addition of specified quantities of $TiO_2$, CoO, and $Al_2O_3$ to ZnO. It was found that the interstitial $TiO_2$ in the ZnO restrains the grain growth and CoO acts onto the bond between grains. The influence of the inclusion of $TiO_2$ and CoO onto the sintering behavior also was investigated.

• Bulletin of the Korean Chemical Society
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• v.17 no.12
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• pp.1123-1127
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• 1996

Crystalline compound RbV2SeO7, a Rb analogue of KV2SeO7, was synthesized from a hydrothermal reaction of V2O5, V2O3, SeO2, and Rb2CO3 in the mole ratio 3: 1: 15: 6 (in millimoles) at 230℃. RbV2SeO7 crystallizes in an orthorhombic space group Pnma (No. 62) with a=18.444(8), b=5.415(3), c=7.070(4) Å, Z=8. The two structures of KV2SeO7 and RbV2SeO7 are almost the same except that bond lengths in the latter are slightly longer than in the former. The magnetic susceptibility measurement for RbV2SeO7 in the temperature range 4-300 K showed an antiferromagnetic ordering with TN=45 K, higher than that for KV2SeO7 of 27 K. The origin of the magnetic coupling and the different ordering temperatures in the two phases are discussed in relation to the crystal structures.

• Journal of the Korean Ceramic Society
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• v.42 no.6 s.277
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• pp.391-398
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• 2005

It is known that $BaMgAl_{10}O_{17}:Eu^{2+}(BAM)$ phosphors currently used have a serious thermal degradation problem. We screened $SrO-B_2O_3-P_2O_5$ system by a solution combinatorial chemistry technique in an attempt to search for a thermally stable blue phosphor for PDPs. A Quantitative Structure Activity Relationship (QSAR) was also obtained using an artificial neural network trained by the result fiom the combinatorial screening. As a result, we proposed a promising composition range in the $SrO-B_2O_3-P_2O_5$ ternary library. These compositions crystallized into a single major phase, $Sr_6BP_5O_{20}:Eu^{2+}$. The structure of $Sr_6BP_5O_{20}:Eu^{2+}$ was clearly determined by ab initio calculation. The luminescent efficiency of $Sr_6BP_5O_{20}:Eu^{2+}$ was 2.8 times of BAM at Vacuum Ultra Violet (VUV) excitation. The thermal stability was also good but the CIE color chromaticity was slightly poor.

• Journal of the Korean Ceramic Society
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• v.23 no.3
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• pp.44-52
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• 1986

$Al_2O_3-ZrO_2$ ceramics was obtained by the co-precipitation method using $Al_2(SO_4)_2$.$18H_2O$ and $ZrOCl_2$.$8H_2O$ as starting materials $MgCl_2$.$6H_2O$ as a sintering aid and NH4OH as a hydrolyzing agent. The coprecipitate from the above raw materials was calcined at 125$0^{\circ}C$ for 1h and again sintered at 1$650^{\circ}C$ for 2h before measurements of strength hardness and fracture toughness. MgO addition was found to increase mechanical properties of the $Al_2O_3-ZrO_2$ system. The strength and frac-ture toughness of $Al_2O_3-ZrO_2$ ceramics were considered to be increased by stress-induced phase tranforma-tion of $ZrO_2$.

• Journal of the Korean Ceramic Society
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• v.40 no.9
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• pp.859-866
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• 2003

When calcium sulfoaluminate-based expansive cement was hydrated, ettringite and monosulfate were mainly formed. The crack of hardened cement was prevented by compensating drying shrinkage due to formation of the above hydrates. In order to study the hydration properties of calcium sulfoaluminate-based expanding cement, 3CaOㆍ3Al$_2$O$_3$ㆍCaSO$_4$(C$_4$A$_3$S) was prepared by chemical synthesis, and then the hydration of $C_4$A$_3$S-Ca(OH)$_2$-CaSO$_4$.$2H_2O$-C$_3$A system_was characterized. Good $C_4$A$_3$S phase was prepared at $1300^{\circ}C$ by chemical synthesis, and the main hydration product of $C_4$A$_3$S-Ca(OH)$_2$-CaSO$_4$.2$H_2O$ system was ettringite. In the case of hydration $C_4$A$_3$S-Ca(OH)$_2$-CaSO$_4$ㆍ 2$H_2O$-C$_3$A system, ettringite was formed in the early period and it was transformed into monosulfate while consumed gypsum.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.10
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• pp.1488-1493
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• 2017

Boron-doped ZnO:Al films were deposited by rf magnetron sputtering. The structural and optical property variations of the films with the boron amounts were studied. ZnO nanorods were grown on $SiO_2/Si$ wafers and glass by a hydrothermal method. ~50 nm-thick boron-doped ZnO:Al films were deposited on the substrates as seed layers. The mixed solution of zinc nitrate hexahydrate and hexamethylenetetramine in DI water was used as a precursor for ZnO nanorods. The concentration of zinc nitrate hexahydrate and that of hexamethylenetetramine were 0.05 mol, respectively. ZnO nanorods were grown at $90^{\circ}C$ for 2 hours. X-ray diffraction was conducted to observe the crystallinity of ZnO nanorods. A field emission scanning electron microscope was employed to study the morphology of nanorods. Optical transmittance was measured by a UV-Vis spectrophotometer, and photoluminescence was carried out with 266 nm light. The ZnO nanorods grown on the 0.5 wt% boron-doped ZnO seed layer showed the best crystallinity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.901-904
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• 2001

For the c-axis oriented epitaxial YBa$_2$Cu$_3$O$_{7-{\delta}}$ thin film on r-cut sapphire substrate it is necessary to deposit buffer layers. The CeO$_2$buffer layer was deposited on sapphire substrate using RF magnetron sputtering system. We investigated XRD pattern of CeO$_2$thin films at various sputtering conditions such as sputtering gas ratio, sputtering power, target to substrate distance, sputtering pressure and substrate temperature. The optimum condition was 15 mTorr with deposition pressure, 1:1.2 with $O_2$and Ar ratio and 9cm with target to substrate distance. The CeO$_2$(200) peak was notable for a deposition temperature above 75$0^{\circ}C$. The YBa$_2$Cu$_3$O$_{7-{\delta}}$ was deposited on CeO$_2$buffered r-cut sapphire substrate using pulsed laser ablation. The YBa$_2$Cu$_3$O$_{7-{\delta}}$CeO$_2$(200)/A1$_2$O$_3$thin film was exhibited a critical temperature of 89K.xhibited a critical temperature of 89K.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.17-21
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• 2001

We proposed that concentrations of cartier electron as well as ionized donor defects in nonstoichiometric ZnO are proportional to $P^{-1/2}_{O_2}$, whenever they ionizes singly or doubly, by employing the Fermi-Dirac (FD) statistics for ionization of the native thermal defects $Zn_i$ and $V_o$. The effect of acceptor defect, zinc vacancy $V_{Zn}$made by the Frenkel and Schottky disorder reactions, on carrier concentrations was discussed. By application of the FD statistics law to their ionization while the formation of defects is assumed governed by the mass-action law, the calculation results indicate; 1. ZnO shows n-type conductivity with $N_D>$N_A$ and majority concentration of $n{\propto}\;P^{-1/2}_{O_2}$ in a range of $P_{O_2}$, lower than a critical value. 2. As the concentration of acceptor $V_{Zn}$ increases proportional to $P^{1/2}_{O_{2}}$, ZnO made at extremely high $P_{O_{2}}$, can have p-type conductivity with majority concentration of p ${\propto}\;P^{-1/2}_{O_{2}}$. One may not, however, obtain p-type ZnO if the pressure for $N_{D}<$N_{A}$ is too high.