• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.533-536
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• 2001

Single crystal cubic silicon carbide(3C-SiC) thin film were deposited on Si(100) substrate up to a thickness of $4.3{\mu}m$ by APCVD(atmospheric pressure chemical vapor deposition) method using hexamethyildisilane(HMDS) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like. The growth rate of the 3C-SiC films was $4.3{\mu}m/hr$. The 3C-SiC epitaxical layers on Si(100) were characterized by XRD(X-ray diffraction), raman scattering and RHEED(reflection high-energy electron diffraction), respectively. The 3C-SiC distinct phonons of TO(transverse optical) near $796cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The deposition films were identified as the single crystal 3C-SiC phase by XRD spectra($2{\theta}=41.5^{\circ}$). Also, with increase of films thickness, RHEED patterns gradually changed from a spot pattern to a streak pattern.

• Korean Journal of Veterinary Service
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• v.37 no.3
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• pp.157-164
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• 2014

Clostridium chauvoei is the etiologic agent of blackleg, a high mortality rated disease infection mainly cattle. In the present study, the partial sequences of 16S rRNA and flagellin gene of C. chauvoei isolated in Jeonbuk, Korea were determined and compared with those of reference strain. Oligonucleotide primers were designed to amplify a 811 bp fragment of 16S rRNA gene and 1229 bp fragment of flagellin gene. Sequencing analysis of 16S rRNA gene showed high homology to the reference strains ranging 82.3% to 100%, while flagellin gene were different from published foreign clostridia, showing 98.7% to 72.0% nucleotide sequence homology. Phylogenetic analysis based on 16S rRNA gene revealed the close phylogenetic relationship of C. chauvoei and C. septicum in cluster I, which includes C. carnis, C. tertium, C. quinii, C. celatum, C. perfringens, C. absonum, C. botulinum B. Phylogentic analysis also revealed that flagellin gene formed a single cluster with C. chauvoei, C. septicum, C. novyi A, C. novyi B, C. tyrobutylicum, C. acetobutylicum. The genetic informations obtained from this study could be useful for the molecular study of C. chauvoei.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.533-536
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• 2001

Single crystal cubic silicon carbide(3C-SiC) thin film were deposited on Si(100) substrate up to a thickness of 4.3 $\mu\textrm{m}$ by APCVD(atmospheric pressure chemical vapor deposition) method using hexamethyildisilane(HMDS) at 1350$^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like. The growth rate of the 3C-SiC films was 4.3 $\mu\textrm{m}$/hr. The 3C-SiC epitaxical layers on Si(100) were characterized by XRD(X-ray diffraction), raman scattering and RHEED(reflection high-energy electron diffraction), respectively The 3C-SiC distinct phonons of TO(transverse optical) near 796 cm$\^$-1/ and LO(longitudinal optical) near 974${\pm}$1 cm$\^$-1/ were recorded by raman scattering measurement. The deposition films were identified as the single crystal 3C-SiC phase by XRD spectra(2$\theta$=41.5$^{\circ}$). Also, with increase of films thickness, RHEED patterns gradually changed from a spot pattern to a streak pattern

• Journal of the Korean Ceramic Society
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• v.33 no.10
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• pp.1163-1169
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• 1996

The effects of borax on the phase formation of C2S, C4A3 and $\alpha$'-C2S phases. It has negative effects on formation of C4A3 And it lowers the forming temperature of C4AF. It also has been found that borax improves the clinkerization of MBC. In the MBC clinker with borax 3% C2S have larger and more irregular shapes, larger C/S mole ratio and C4A3 have smaller size larger C/ molr ratio than in the clinker without borax.

• Journal of the Institute of Convergence Signal Processing
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• v.10 no.2
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• pp.141-145
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• 2009

A C-to-SystemC synthesizer which processes the input behavior according to high-level synthesis, and then transforms the synthesis result into SystemC module code is implemented in this paper. In the synthesis process, the input behavioral description in C source code is scheduled using list scheduling algorithm and register allocation is performed using left-edge algorithm on the result of scheduling. In the SystemC process, the output from high-level synthesis process is transformed into SystemC module code by combining it with SystemC features such as channels and ports. The operation of the implemented C-to-SystemC synthesizer is validated through simulating the synthesis of elliptic wave filter in SystemC code. C-to-SystemC synthesizer can be used as a part of tool-chain which helps to implement SystemC design methodology covering from modeling to synthesis.

• Journal of Sensor Science and Technology
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• v.22 no.3
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• pp.175-180
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• 2013

This paper describes the characteristics of cubic silicon carbide (3C-SiC) films grown on a carbonized Si(100) substrate, using hexamethyldisilane (HMDS, $Si_2(CH_3)_6$) as a safe organosilane single precursor in a nonflammable $H_2$/Ar ($H_2$ in Ar) mixture carrier gas by atmospheric pressure chemical vapor deposition (APCVD) at $1280^{\circ}C$. The growth process was performed under various conditions to determine the optimized growth and carbonization condition. Under the optimized condition, grown film has a single crystalline 3C-SiC with well crystallinity, small voids, low residual stress, low carrier concentration, and low RMS. Therefore, the 3C-SiC film on the carbonized Si (100) substrate is suitable to power device and MEMS fields.

• Journal of Korean Society for Quality Management
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• v.28 no.2
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• pp.103-122
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• 2000

Process capability indices (PCI) $C_p\;C_{pk},\;C_m,\;and\;C_{pmk}$ are widely used to evaluate the process performance. The PCI's have been evolved to consider the 'off targetness' more adequately. However, all of these indices are found to be inconsistent with the proportion of nonconforming items, in some cases. That is, the PCI for a process may result in higher value even when the proportion of defectives increases. For these reasons, we propose a new capability index, $c_{pd}$, which is consistent with the defect rate. The characteristics of the new PCI, $c_{pd}$ are investigated with respect to the existing PCI's. Some statistical properties of an estimator for $c_{pd}$ are also investigated by a Monte Carlo simulation. Sensitivity study under minor deviation from normality is also performed to show the robustness of $c_{pd}$. A good estimator for $c_{pd}$ is under study.

• Journal of the Korean institute of surface engineering
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• v.39 no.3
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• pp.87-92
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• 2006

The characteristic of interface layer and the effect of bias voltage on the microstructure of c-BN films were studied in the microwave plasma hot filament C.V.D process. c-BN films were deposited on a high speed steel(SKH-51) substrate by hot filament CVD technique assisted with a microwave plasma to develop a high performance of resistance coating tool. c-BN films were obtained at a gas pressure of 20 Torr, vias voltage of 300 V and substrate temperature of $800^{\circ}C$ in $B_2H_6-NH_3-H_2$ gas system. It was found that a thin layer of hexagonal boron nitride(h-BN) phase exists at the interface between c-BN layer and substrate.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2005.04a
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• pp.102-105
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• 2005

The mechanical properties of $SiC_f/SiC$ composites reinforced with continuous SiC fiber have been investigated in conjunction with the detailed analysis of their microstructures. Especially, the effect of test temperature on the characterization of $SiC_f/SiC$ composites was examined. In this composite system, a braiding Hi-Nicalon SiC fibric was selected as a reinforcement. $SiC_f/SiC$ composites have been fabricated by the reaction sintering process, using the complex matrix slurry with a constant composition ratio of SiC and C particles. The characterization of $RS-SiC_f/SiC$ composites was investigated by means of SEM, EDS and three point bending test. Based on the mechanical property-microstructure correlation, the high temperature applicability of $RS-SiC_f/SiC$ composites was discussed.

• Korean Journal of Food Science and Technology
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• v.21 no.5
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• pp.624-632
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• 1989

Lipids of Liza carinata roe were extracted and separated into detailed lipid classes by column chromatography. About 57-62% of the total lipids consisted of wax esters in which saturated and unsaturated fatty alcohols combined with fatty acids with up to six double bonds. Between the even-numbered wax ester peaks in gas-liquid chromatography, ones with odd chain lengths such as C31, C33 and C35 were eluted in appreciable amounts. Isomers composed of different fatty acids and alcohols at a given chain length were not resolved on 1.5% OV-17 column. The principal component of wax esters in sample A were C32, C34 and C30 (45.0%, 19.2%, and 12.2%), followed by C36 and C38 length (9.5% and 4.7%), while those in sample B were mainly occupied by C34, C32 and C36 length (36.3%, 31.4% and 14.5%) with minor components C30 and C38 length (5.2%, and 3.4%). The wax esters were not a random combination of constituent fatty acids and alcohols. With increase in boiling temperature the wax esters increased slightly in viscosity over the unboiled, showing a tendency toward randomness, and finally were completely randomized at $360^{\circ}C$ for 40 minutes. The enzymes involved in wax ester biosynthesis seemed to have high selectivity for chain length of fatty acids and alcohols.