• Journal of Korea Foundry Society
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• v.14 no.5
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• pp.429-437
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• 1994

Influence of interfacial structure between matrix and particle in A356/coated SiC composite fabricated by squeeze casting method was studied. Experimental variables are types of coated metallic film on SiC particles such as Cu, Ni-P, and applied pressure for squeeze casting. It was found that coating treatment on SiC particles improves the wetting of liquid A356 alloy on SiC particles. SiC particle distribution is very homogeneous in A356 matrix alloy which is fabricated by squeeze casting. Analysing the surface morphology of fractured A356/coated SiC, it was concluded that metallic thin film by coating treatment on SiC particle improves the interfacial bonding between particle and matrix, and so does on mechanical properties such as tensile strength. However, there was on significant difference in hardness between those composite made of as-received SiC particle and coated SiC particle.

• Microbiology and Biotechnology Letters
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• v.23 no.5
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• pp.624-631
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• 1995

The fermentation characteristics of Saccharomyces cerevisiae F38-1, a newly isolated thermotolerant yeast strain from a high temperature environment have been studied using a fermentation medium containing 20% glucose, 0.2% yeast extract, 0.2% polypeptone, 0.3% (NH$_{4}$)$_{2}$SO$_{4}$, 0.1% KH$_{2}$PO$_{4}$, and 0.2% MgSO$_{4}$ without shaking at 30$\circ$C to 43$\circ$C for 5 days. The fermentability was over 90% at 30$\circ$C, 88% at 37$\circ$C, 77% at 40$\circ$C and 30% at 43$\circ$C. A similar fermentation result was obtained at pH between 4 and 6 at 30$\circ$C and 40$\circ$C. Aeration stimulated the growth of the strain at the beginning of the fermentation, but it reduced alcohol production at the end of alcohol fermentation. Optimal glucose concentration was determined to be between 18 and 22% at 40$\circ$C as well as 30$\circ$C, but the growth was inhibited at the glucose concentration of over 30%. A fermentability of over 90% was observed at 40$\circ$C in 2 days when the medium was supplemented by 2% yeast extract. A higher inoculum size increased the initial fermentation rate, but not the fermentation. A fermentability of over 90% was achieved in 2 days at 40$\circ$C in a fermentor experiment using an optimized medium containing 20% glucose and 1% yeast extract.

• Electrical & Electronic Materials
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• v.8 no.2
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• pp.151-157
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• 1995

Frequency-dependent electrical properties of $C_{22}$-Quinolinium(TCNQ) LB films were investigated in a frequency range of 10[Hz]-13[MHz] along a perpendicular direction. The films were heat-treated to understand an electrodynamic response in a temperature range of 20-240[.deg. C]. Frequencydependent dielectric constants show that there are two characteristic dispersions; one is a dispersion occuring near 1[MHz] coming from the orientational polarization of the molecules and the other one is an interfacial polarization effect below 1[kHz] or so when the annealing temperature is above 80 [.deg. C]. The overall frequency-dependent dielectric constant is higher near 80[.deg. C]. It may be due to a softness of the alkyl chains. Several other methods were employed to identify the internal structure change of the films. DSC(differential scanning calorimetry) data of the $C_{22}$-Quinolinium(TCNQ) molecules shows that there is an endothermic process near 110[.deg. C] and a weak exothermic process near 180[.deg. C]. While the endothermic process is related to a disordering of the alkyl chains, the exothermic process seems to be due to a chemical structure change of the TCNQ molecules. Thickness measurement by ellipsometry shows that there is a thickness drop near 100[.deg. C], and the thickness above 120[.deg. C] becomes around 20[%] of the room-temperature value.lue.

• Journal of the Korean institute of surface engineering
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• v.48 no.5
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• pp.218-226
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• 2015

The goal of this study is to investigate a metal cladding that contains SiC composites as a protective layer and analysis the characteristics of the specimens on high temperature oxidation To make SiC composites, the current process needs a high temperature (about $1100^{\circ}C$) for the infiltration of fixing materials such as SiC. To improve this situation, we need a low temperature process. In this study, we developed a low temperature process for making SiC composites on the metal layer, and we have made two kinds: cladding with protective SiC composites made by polycarbosilane(PCS), and a PCS filling method using supercritical carbon dioxide. A corrosion test at $1200^{\circ}C$ in a mixed steam and Ar atmosphere was performed on these specimens. The result show that the cladding with protective SiC composites have excellent oxidation suprression rates. This study can be said to have developed new metal cladding with enhanced durability by using SiC composite as protective films of metal cladding instead of simple coating film.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.3
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• pp.359-366
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• 2016

Today's multi-core technology rapidly increases with more and more Intellectual Property cores on a single chip. Network-on-Chip (NoC) is an emerging communication network design for SoC. For efficient on-chip communication, routing algorithms plays an important role. This paper proposes a novel multicast routing technique entitled as Docket NoC (Dt-NoC), which eliminates the need of routing tables for faster communication. This technique reduces the latency and computing power of NoC. This work uses a CURVE restriction based algorithm to restrict few CURVES during the communication between source and destination and it prevents the network from deadlock and livelock. Performance evaluation is done by utilizing cycle accurate RTL simulator and by Cadence TSMC 18 nm technology. Experimental results show that the Dt-NoC architecture consumes power approximately 33.75% 27.65% and 24.85% less than Baseline XY, EnA, OEnA architectures respectively. Dt-NoC performs good as compared to other routing algorithms such as baseline XY, EnA, OEnA distributed architecture in terms of latency, power and throughput.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.29 no.3 s.234
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• pp.425-431
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• 2005

The efficiency of complex slurry preparation route for developing the high performance SiC matrix of $RS-SiC_{f}/SiC$ composites has been investigated. The green bodies for RS-SiC materials prior to the infiltration of molten silicon were prepared with various C/SiC complex slurries, which associated with both the sizes of starting SiC particles and the blending conditions of starting SiC and C particles. The characterization of Rs-SiC materials was examined by means of SEM, EDS and three point bending test. Based on the mechanical property-microstructure correlation, the process optimization is also discussed. The flexural strength of Rs-SiC materials greatly depended on the content of residual Si. The decrease of starting SiC particle size in the C/SiC complex slurry was effective for improving the flexural strength of RS-SiC materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.235-235
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• 2009

This paper describes the influence of a polycrystalline (poly) 3C-SiC buffer layer on the surface acoustic wave (SAW) properties of poly aluminum nitride (AlN) thin films by comparing the center frequency, insertion loss, the electromechanical coupling coefficient ($k^2$), andthetemperaturecoefficientoffrequency(TCF) of an IDT/AlN/3C-SiC structure with those of an IDT/AlN/Si structure, The poly-AlN thin films with an (0002)-preferred orientation were deposited on a silicon (Si) substrate using a pulsed reactive magnetron sputtering system. Results show that the insertion loss (21.92 dB) and TCF (-18 ppm/$^{\circ}C$) of the IDT/AlN/3C-SiC structure were improved by a closely matched coefficient of thermal expansion (CTE) and small lattice mismatch (1 %) between the AlN and 3C-SiC. However, a drawback is that the $k^2(0.79%)$ and SAW velocity(5020m/s) of the AlN/3C-SiC SAW device were reduced by appearing in some non-(0002)AlN planes such as the (10 $\bar{1}$ 2) and (10 $\bar{1}$ 3) AlN planes in the AlN/SiC film. Although disadvantages were shown to exist, the use of the AlN/3C-SiC structure for SAW applications at high temperatures is possible. The characteristics of the AlN thin films were also evaluated using FT-IR spectra, XRD, and AFM images.

• Journal of the Korean Ceramic Society
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• v.27 no.2
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• pp.195-200
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• 1990

For the development of low energy cement, the belite cement clinker of calcium sulphoaluminate ferrite type was synthesized at 130$0^{\circ}C$ and containing C2S, C4A3S as the major minerals along with C3A, C4AF, CS by using limestone, dolomite, clay, iron ore, gypsum and alumina as raw materials. At over 130$0^{\circ}C$, C4A3S was decomposed and thus C3A was increased. When hydrated, this cement was hardened, producing ettringite, CSH, etc.

• The Korean Journal of Mycology
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• v.14 no.1
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• pp.1-8
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• 1986

The following ten species collected from the air of Seoul City and the soils in Korea are reported as undescribed to Korean fungal flora: Cladosporium sphaerospermum, C. herbarum, C. colocasiae, Alternaria chlamydospora, A. cheiranthi, A. citri, Curvularia ovoidea, C. inaequalis, C. affinis, and Eurotium repens.

• Communications of the Korean Mathematical Society
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• v.15 no.3
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• pp.521-531
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• 2000

Graph C*-algebras C*(E) are the universal C*-algebras generated by partial isometries satisfying the Cuntz-Krieger relations determined by directed graphs E, and it is known that a simple graph C*-algebra is extremally rich in sense that it contains enough extreme consider a sufficient condition on a graph for which the associated graph algebra(possibly nonsimple) is extremally rich. We also present examples of nonextremally rich prime graph C*-algebras with finitely many ideals and with real rank zero.