• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.302-305
• /
• 2008

We present a new touch screen method, which utilizes the variation of liquid crystal capacitance according to the touch event on the screen. It is integrated in the AMLCD with the conventional LTPS process. Its resolution is same as the display resolution as well as performs the multi-touch sensing function basically. The design concept and the operation are verified with the SPICE simulation.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08a
• /
• pp.833-836
• /
• 2007

A low power and small area source driver using LTPS TFTs is proposed for mobile applications. This source driver adopts level shifter with holding latch function and new R-to-R type digital-to-analog converter (DAC). The power consumption and layout area of the proposed source driver are reduced by 23% and 25% for 16M colors and qVGA AM-OLED panel, respectively.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08a
• /
• pp.409-412
• /
• 2007

A lot of research for system-on-panel(SOP) have been done to integrate display systems including data driver, gate driver, timing controller, DC-DC converter, and smart functions such as embedded touch screen, ambient brightness sensing and luminance control, finger printing on the glass. Recently, the cost of an one-chip driver IC with various functions has decreased rapidly, and new mobile display interface technologies have been introduced. So it is necessary to examine the feasibility of SOP for practical mobile applications. In this paper, we will re-examine LTPS technologies for mobile displays in terms of various aspects and discuss the practical limitations on SOP technology and future technology trend of mobile displays.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.533-536
• /
• 2006

VIATRON TECHNOLOGIES has developed Field-Enhanced Rapid Thermal Processor (FERTP) system that enables LTPS LCD and AMOLED manufacturers to produce poly-Si films at low cost, high throughput, and high yield. The FE-RTP allows the diverse process options including crystallization, thermal oxidation of gate oxides and fast pre-compactions. The process and equipment compatibility with a-Si TFT lines is able to provide a viable solution to produce poly-Si TFTs using a-Si TFT lines.

• Journal of Information Display
• /
• v.8 no.1
• /
• pp.1-5
• /
• 2007

We have developed a CMOS LTPS process which requires only five photolithographic masks and only one ion doping step. Drain/Source areas of NMOS TFTs were formed by PECVD deposition of a highly doped precursor layer while PMOS contact areas were defined by ion implantation. Single TFTs, inverters, ring oscillators and shift registers were fabricated. N and p-channel devices reached field effect mobilities of $173cm^2$/Vs and $47cm^2$/Vs, respectively.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2004.08a
• /
• pp.1015-1018
• /
• 2004

We proposed a new cross-coupled level shifter circuit using low temperature poly-Si(LTPS) TFT. The proposed level shifter can operate on low input voltage in spite of low mobility and widely varying high threshold voltage of LTPS TFT. Also, the proposed level shifter operates at high frequency and reduces power consumption for having fast rising and falling time and shortening period flowing short-circuit currents.

• Journal of Information Display
• /
• v.4 no.4
• /
• pp.1-3
• /
• 2003

For excimer laser annealing (ELA), energy density, number of pulses, beam uniformity, and condition of initial amorphous Si (a-Si) films are significant factors contributing to the final microstructure and the performance of low-temperature polycrystalline Si (LTPS) TFTs. Although the process and equipment have been significantly improved, the environmental factors associated with initial amorphous Si (a-Si) films and process conditions are yet to be optimized.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.1645-1648
• /
• 2006

We have developed a CMOS LTPS process, which requires only five photolithographic masks and only one ion doping step. Single TFTs, inverters, ring oscillators and shift registers were fabricated. N- and p-channel devices reached field effect mobilities of $173cm^2/Vs$ and $47cm^2/Vs$, respectively.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2002.08a
• /
• pp.42-45
• /
• 2002

Small sized LTPS TFT-LCDs are developed and evaluated. Sine the fabrication process is optimized for the productivity of huge glass substrate, the pattern size is above 5${\mu}m$. The panels with integrated digital data drivers are not satisfactory to compete with a-Si technology. Therefore, LTPS panels are implemented by PMOS technology and it is proved that they can be competitive with a-Si TFT-LCDs in terms of performance and cost.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2004.08a
• /
• pp.319-321
• /
• 2004

We report on progress in developing high-power excimer lasers as well as UV-optics for creating low-temperature poly silicon (LTPS). A new high-power excimer laser offers 315 Watts with high pulse to pulse energy stability. Larger substrates can now be processed in better quality with either the SLS process or the new optics for line beam excimer laser annealing.