• The Journal of the Korea institute of electronic communication sciences
• /
• v.8 no.2
• /
• pp.207-212
• /
• 2013

A novel pixel circuit that uses only n-type low-temperature polycrystalline silicon (poly-Si) thin-film transistors (LTPS-TFTs) to compensate the threshold voltage variation of a OLED driving TFT is proposed. The proposed 6T1C pixel circuit consists of 5 switching TFTs, 1 OLED driving TFT and 1 capacitor. When the threshold voltage of driving TFT varies by ${\pm}0.33$ V, Smartspice simulation results show that the maximum error rate of OLED current is 7.05 % and the error rate of anode voltage of OLED is 0.07 % at Vdata = 5.75 V. Thus, the proposed 6T1C pixel circuit can realize uniform output current with high immunity to the threshold voltage variation of poly-Si TFT.

• Journal of Korean Society on Water Environment
• /
• v.37 no.1
• /
• pp.20-31
• /
• 2021

In this study, an analysis of the characteristics of organic matter and nitrogenous oxygen demand (NOD) of 17 sewage effluent and wastewater treatments was conducted. High CODMn and carbonaceous biological oxygen demand (CBOD) concentrations were observed in the livestock treatment plants (LTP), wastewater treatment plants(WTP), and night soil treatment plants (NTP), but the highest NOD concentration and contribution rates of NOD to BOD5 were found in sewage treatment plants (STP). There was no significant difference in the CBOD/CODMn ratio for each of the six pollution source groups, but the LTPs, WTPs, and NTPs all showed relatively high CODMn concentrations in their effluent samples, indicating that they are facilities which discharge large amounts of refractory organic matter. The seasonal change of NOD in all facilities' effluent was found to be larger than the seasonal change of CBOD, and data results also revealed an elevation of NOD and NH3-N concentration from December to February, when the water temperature was low. There was no significant difference in NH3-N concentration in relation to pollution source group (p=0.08, one-way ANOVA), but the STP, which had a high NOD contribution rate to BOD5 of 48%, showed a high correlation between BOD5 and NOD (r2=0.95, p<0.0001). These results suggest that the effect of NOD on BOD5 is an important factor to be considered when analyzing STP effluent.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.9 no.3
• /
• pp.279-284
• /
• 2014

This paper proposes a novel OLED pixel circuit to compensate the threshold voltage variation of p-channel low temperature polycrystalline silicon thin-film transistors (LTPS TFTs). The proposed 5-TFT OLED pixel circuit consists of 4 switching TFTs, 1 OLED driving TFT and 1 capacitor. One frame of the proposed pixel circuit is divided into initialization period, threshold voltage sensing and data programming period, data holding period and emission period. SmartSpice simulation results show that the maximum error rate of OLED current is -4.06% when the threshold voltage of driving TFT varies by ${\pm}0.25V$ and that of OLED current is 9.74% when the threshold voltage of driving TFT varies by ${\pm}0.50V$. Thus, the proposed 5T1C pixel circuit can realize uniform OLED current with high immunity to the threshold voltage variation of p-channel poly-Si TFT.

• Membrane Journal
• /
• v.16 no.4
• /
• pp.268-275
• /
• 2006

Novel SILEMs were prepared by multi-stage phase separation process combined by the low temperature phase separation (LTPS) and the high temperature phase separation (HTPS) using room temperature ionic liquids (RTILs) which have a high ionic conductivity. PVDF and imidazolium series ionic liquids were used as membrane material and electrolyte, respectively. To study the ion conducting properties, the SILEMs were tested using LCR meter at temperature controlled from 30 to $130^{\circ}C$. Under humid conditions, with increasing temperature from 30 to $100^{\circ}C$, the ion conductivity of the cast $Nafion^{(R)}$ membrane increased linearly, but then started to decrease after $100^{\circ}C$. However, in the case of the SILEMs, with increasing operating temperature, the ion conductivity increased. Also, the ion conductivity behaviors of the SILEMs were almost same, regardless of humidity. The ion conductivity of the SILEMs was $2.7{\times}10^{-3}S/cm$ and increased almost linearly up to $2.2{\times}10^{-2}S/cm$ with increasing temperature to $130^{\circ}C$. The effects of an inorganic filler on the physical properties of the SILEMs were studied using the $SiO_2$. The addition of $SiO_2$ could improve the mechanical strength of the SILEMs, though the ionic conductivity was decreased slightly.