• Title/Summary/Keyword: A-LTPS

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Development of 200ppi SOG-LCD

  • Kim, Chul-Ho;Kim, Chul-Min;Moon, Kook-Chul;Park, Kee-Chan;Kim, Il-Gon;Joo, Sueng-Yong;Park, Tae-Hyeong;Maeng, Ho-Suk;Jung, Eu-Jin;Kim, Chi-Woo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.85-88
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    • 2004
  • 2-inch qVGA (240${\times}$320) TFT-LCD with integrated 6-bit source driver is reported. The pixel density is over than 200ppi and the operation frequency is about 2.8MHz. In order to improve TFT characteristics, TS-SLS (Two-Shot Sequential Lateral Solidification) technology has been employed. A 1:6 demultiplexing scheme has been successfully implemented in the source driver owing to the superb characteristics of the TS-SLS TFTs, which resulted in small driver circuit area.

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A Novel Transflective-type LTPS-LCD with Cap-Divided VA-Mode

  • Kang, Seung-Gon;Kim, Seong-Ho;Song, Seock-Cheon;Park, Won-Sang;Yi, Chung;Kim, Chi-Woo;Chung, Kyu-Ha
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.831-833
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    • 2004
  • A novel transflective-type LC mode with good display performance has been developed In order to drive both transmissive and reflective modes simultaneously without any modulation of gamma in a single-gap structure, we have introduced a new design concept in the reflective region, where the capacitance is separated into liquid crystal($C_{LC}$} and organic layer($C_{OL}$), playing a key role as a voltage divider in our cap-divided VA-mode. With this cap-divided method having both merits of simplifying process and good legibility, we have achieved good optical characteristics such as high contrast ratio and wide viewing angle in a single-gap homeotropic panel design.

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AlLTPs from Allium species represent a novel class of lipid transfer proteins that are localized in endomembrane compartments

  • Yi, Seung-In;Park, Mee-Yeon;Kim, Ju-Kon;Choi, Yang Do
    • Plant Biotechnology Reports
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    • v.3 no.3
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    • pp.213-223
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    • 2009
  • Lipid transfer proteins (LTPs) are widely distributed in the plant kingdom, but their functions remain elusive. The proteins AlLTP2-4 were isolated from three related Allium plants: garlic (A. sativum L.), Welsh onion (A. fistulosum L.), and Nanking shallot (A. ascalonicum L.). These novel proteins comprise a new class of LTPs associated with the Ace-AMP1 from onion (A. cepa L.). The AlLTP genes encode proteins harboring 132 common amino acids and also share a high level of sequence identity. Protein characteristics and phylogenetic analysis suggest that LTPs could be classified into five distinct groups. The AlLTPs were clustered into the most distantly related plant LTP subfamily and appeared to be restricted to the Allium species. In particular, the number of amino acids existing between the fourth and fifth Cys residue was suggested as a conserved motif facilitating the categorization of all the LTP-related proteins in the family. Unlike other LTPs, AlLTPs harboring both the putative C-terminal propeptide and N-terminal signal peptide were predicted to be localized to cytoplasmic vacuoles. When a chimeric GFP protein fused with both N-terminal and C-terminal AlLTP2 signal peptides was expressed in rice cells, the fluorescence signal was detected in the endomembrane compartments, thereby confirming that AlLTPs are an unprecedented intracellular type of LTP. Collectively, our present data demonstrate that AlLTPs are a novel type of LTP associated with the Allium species.

Development of New LTPS Process

  • Yi, Chung;Park, Kyung-Min;Choi, Pil-Mo;Kim, Ung-Sik;Kim, Dong-Byum;Kim, Chi-Woo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.1024-1026
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    • 2004
  • We have developed the five mask $PMOS^1$ and the six mask CMOS process architecture for poly-Si TFT. In order to have a competitive process with that for a-Si TFT, the simple co-planar electrode structure whose data line electrode and pixel electrode are on the same plane was adopted. In addition, RGB + White four color $technology^2$ were applied to achieve high aperture ratio and transmittance. Using the aforementioned process architecture and four color technology, 2.0 inch qCIF transmissive micro-reflectance (TMR) device was successfully fabricated.

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LTPS TFT LCD Status, Outlook and Challenges

  • Young, Ross;Annis, Charles;Kato, Mitsuhiro;Matsuno, Sam;Young, Barry
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.39-42
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    • 2003
  • Low temperature polysilicon (LTPS) TFT LCOs are in production today at sizes ranging from 0.33" for Viewfinders to 17" for LCD TVs with 21.3" recently demonstrated. Because of their form factor, resolution, brightness and other benefits, LTPS TFT LCD unit shipments, revenues and capacity are expected to grow rapidly, particularly for mobile applications. However, despite the strong outlook, LTPS TFT LCOs are still faced with numerous challenges from a market and technology perspective. LTPS TFT LCD producers were surveyed on which of the current challenges were the most problematic among other questions.

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Improvement of CMP and Cleaning Process of Large Size OLED LTPS Thin Film Using Oscar Type Polisher (Oscar형 연마기를 이용한 대면적 OLED용 LTPS 박막의 CMP 처리 및 세정 공정 개선)

  • Shim, Gowoon;Lee, Hyuntaek;Song, Jongkook
    • Journal of the Semiconductor & Display Technology
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    • v.21 no.4
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    • pp.71-76
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    • 2022
  • We evaluated and developed a 6th generation large-size polisher in the type of face-up and Oscar. We removed the hillocks of the low temperature poly-silicon (LTPS) thin film with this polisher. The surface roughness of LTPS was lowered from 7.9 nm to 0.6 nm after CMP(chemical mechanical polishing). The thickness of the LTPS is measured through reflectance in real time during polishing, and the polishing process is completed according to this thickness. The within glass non-uniformity (WIGNU) was 6.2% and the glass-to-glass non-uniformity (GTGNU) was 2.5%, targeting the LTPS thickness of 400Å. In addition, the residual slurry after the CMP process was removed through the Core Flow PVA Brush and alkaline chemical.

The Emerging Application Potential of LTPS Technology

  • Yoneda, Kiyoshi;Yokoyama, Ryoichi;Yamada, Tsutomu;Mameno, Kazunobu
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.43-49
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    • 2003
  • Low-temperature polysilicon (LTPS) technology has continued to mature with the passing of each year since LTPS mass production began. The integration of complex circuits has become possible with advances in microprocessing, leading to the realization of panels with highly advanced functions. At the same time, efforts have been made to meet market demands for lower costs, thereby boosting competitive strength. Today, LTPS-TFT LCDs have become standard equipment for the monitors of digital still cameras, and inroads are being made into the massive cellular phone market. Micro displays such as electronic viewfinders, which were previously only possible with high-temperature polysilicon technology, can now also be made with LTPS, thus expanding the scope of the technology. AMOLED displays using the LTPS-TFT as a back plane are also approaching the stage of industrialization. The hidden potential for the OLED to replace the familiar LCD has prompted Widespread anticipation for this emerging technology. This paper reflects on the history of LTPS technology, then looks forward to its future prospects and suggests a variety of potential fields of application.

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LTPS Technology in ERSO

  • Liu, David N.;Yeh, Yung-Hui
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.124-128
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    • 2004
  • A Poly-Si and a ITO films with surface roughness 1.8 nm and 0.5 nm of root mean square ($R_{rms}$ vakue) values were developed, respectively. A 3 inch UXGA LTPS TFT-LCD with 667 ppi resolution and a 10 inch VGA LTPS OLED have been developed and demonstrated using PMOS technology.

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New High Stability Excimer Laser for LTPS Manufacturing

  • Herbst, Ludolf;Paetzel, Rainer;Simon, Frank;Fechner, Burkhard
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.540-543
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    • 2006
  • LTPS TFT backplanes for AM OLED displays have advantages in regard to reliability and performance compared to TFT backplanes based on amorphous silicon. However, the requirements for homogeneous laser crystallization during LTPS process are much higher than for LCD backplanes. Most important is the energy stability of the laser source. In this paper we describe a new excimer laser which meets the requirements of LTPS manufacturing process with high homogeneity.

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LTPS 공정 Diode Laser Annealing 방식을 이용한 Poly-Si 결정화

  • Lee, Jun-Gi;Kim, Sang-Seop
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.336-336
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    • 2011
  • AMOLED에 대한 관심이 높아짐에 따라 LTPS (Low Temperature Poly Silicon) TFT에 대한 연구가 활발히 이루어지고 있다. 다결정 실리콘은 단결정 실리콘에 비해 100 cm2/V 이상의 이동도를 보이는 우수한 특성으로 인해 AMOLED 디스플레이에 적합하며 여러 기업에서 LTPS 공정을 이용한 TFT제작을 연구 중이다. LTPS 공정은 현재 ELA (Excimer Laser Annealing) 방식으로 대면적 유리기판에 ELA 방법을 적용함에 있어 설비투자 비용이 지나치게 높아진다는 단점을 가지고 있다. 설비투자 비용의 문제점을 해결하기 위해 Diode Laser을 이용하여 Annealing하는 방법에 대해 연구하였다. 본 연구는 Diode Laser Annealing 방식을 이용하여 poly-Si을 구현하였다. 단결정 실리콘을 제작하기 위해 ICP-CVD장비를 이용하여 150$^{\circ}C$에서 SiH4, He2 혼합, He/SiH4의 flow rate는 20/2[sccm], RF power는 400 W에서 700 W으로 가변, 증착 압력은 25mTorr으로 하였다. 940 nm 파장의 30 W Diode Laser를 8 mm Spot Size로 a-Si에 순간 조사하여 결정화, 그 결과 grain을 형성한 polycrystalline 구조를 확인하였다.

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