• Journal of Electrochemical Science and Technology
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• v.1 no.1
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• pp.45-49
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• 2010

$Li_2PtO_3$ thin film electrodes, which might be possible candidate for the cathode materials for implantable batteries, were synthesized using an electrostatic spray deposition (ESD) technique onto a platinum foil substrate. Single phase $Li_2PtO_3$with a structure similar to layered $LiCoO_2$ structure were synthesized by spraying a precursor solution of $CH_3CO_2Li2H_2O$ in ethanol onto a Pt substrate at temperatures ranging from 200 to $400^{\circ}C$ followed by annealing at above $600^{\circ}C$. Lithium carbonate was the only major phase at temperatures up to $500^{\circ}C$. The X-ray diffraction (XRD) peaks of the Pt foil substrate and lithium carbonate disappeared at temperatures >$600^{\circ}C$. The volumetric capacity of the $Li_2PtO_3$ thin film synthesized using the ESD technique was approximately 817 mAh/$cm^3$, which exceeded that of $LiCoO_2$ (711 mAh/$cm^3$).

• Journal of the Korean Ceramic Society
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• v.41 no.8
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• pp.593-598
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• 2004

To make the all-solid-state lithium thin film battery having less than 1 fm in thickness, LiCoO$_2$ thin films were deposited on Pt/TiO$_2$/SiO$_2$/Si substrate as a function of Li/Co mole ratio and the deposition temperature by Pulsed Laser Deposition (PLD). Especially, LiCoO$_2$ thin films deposited at 50$0^{\circ}C$ with target of Li/Co=1.2 mole ratio show an initial discharge capacity of 53 $\mu$Ah/cm$^2$-$\mu$m and capacity retention of 67.6％. The microstructural and electrochemical properies of (Li, La)TiO3 thin films grown on LiCoO$_2$Pt/TiO$_2$/SiO$_2$/Si structures by Pulsed Laser Deposition (PLD) were investigated at various deposition temperatures. The thin films grown at 10$0^{\circ}C$ show an initial discharge capacity of approximately 51 $\mu$Ah/cm$^2$-$\mu$m and moreover show excellent discharge capacity retention of 90％ after 100 cycles. An amorphous (Li, La)TiO$_3$ solid electrolyte is possible for application to solid electrolyte for all-solid-state lithium thin film battery below 1 $\mu$m.

• Journal of the Korean Chemical Society
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• v.50 no.3
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• pp.243-246
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• 2006

The LiCoO2 thin films were prepared on the Pt/Ti/SiO2/Si substrate by spin coating using citrate sol. The citrate sol was spin-coated on substrate and dried at 380oC for 15 min. to evaporate the solvents and remove the organic materials. The as-deposited films were annealed at 750oC for 10 min. in air for crystallization. The X-ray diffraction patterns for the film have been indexed hexagonal system with space group R3m. The active area of LiCoO2 films for electrochemical test was about 11cm2. A Li foil and 1M LiClO4 in propylene carbonate(PC) and ethylene carbonate(EC) (1:1)were used as an anode and an electrolyte, respectively. The galvanostatic charge-discharge test was carried out at constant current density ranging from 5 A/cm2 in the voltage window between 4.2 and 3.0 V. The first discharge capacity of the film is 0.35Ah/cm2-m. The cycling behavior of the LiCoO2 film is also reported.

• Journal of the Korean Electrochemical Society
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• v.3 no.4
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• pp.219-223
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• 2000

All-solid state lithium rechargeable thin film batteries were fabricated with the configuration of$Cu_{0.5}V_2O_5/Lipon/Li$ using sequential thin film techniques. Copper vanadium oxide thin films and Lipon thin films were prepared by DC reactive dual source magnetron sputtering and RF magnetron sputtering, respectively. According to XRD analysis, we found out that copper vanadium oxide thin films were amorphous. The electrochemical behaviour of them was examined in half cell system using EC : DMC(1:1 in IM $LiPF_5$) liquid electrolyte. The ionic conductivity of Lipon thin film was $1.02\times10^{-6}S/cm$ at $25^{\circ}C$ and $Cu_{0.5}V_2O_5/Lipon/Li$ cell showed that the discharge capacity was about $50{\mu}Ah/cm^2{\mu}m$ beyond 500cyc1es.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.7
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• pp.447-453
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• 2017

In this study, $Li_2MnSiO_4$ cathode material and LiPON solid electrolyte were manufactured into thin films, and the possibility of their use in thin-film batteries was researched. When the RTP treatment was performed after $Li_2MnSiO_4$ cathode thin-film deposition on the SUS substrate by a sputtering method, a ${\beta}-Li_2MnSiO_4$ cathode thin film was successfully manufactured. The LiPON solid electrolyte was prepared by a reactive sputtering method using a $Li_3PO_4$ target and $N_2$ gas, and a homogeneous and flat thin film was deposited on a $Li_2MnSiO_4$ cathode thin film. In order to evaluate the electrochemical properties of the $Li_2MnSiO_4$ cathode thin films, coin cells using only a liquid electrolyte were prepared and the charge/discharge test was conducted. As a result, the amorphous thin film of RTP treated at $600^{\circ}C$ showed the highest initial discharge capacity of about $60{\mu}Ah/cm^2$. In cases of coin cells using liquid/solid double electrolyte, the discharge capacities of the $Li_2MnSiO_4$ cathode thin films were comparable to those without solid LiPON electrolyte. It was revealed that $Li_2MnSiO_4$ cathode thin films with LiPON solid electrolyte were applicable in thin film batteries.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.3
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• pp.99-105
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• 2014

$LiCoO_2$ thin film have received attention as cathodes of thin-film microbatteries. In this study, $LiCoO_2$ thin films were synthesized on Au substrates by sol-gel spin coating method and electrochemical properties were investigated under annealing temperature and time. The phycochemical properties of $LiCoO_2$ thin film were investigated by X-ray diffraction, scaning electron microscopy and atomic force microscopy. The electrochemical properties were characterized using galvanostatic charging/discharging cycling tests. From X-ray diffraction, as-grown films annealed at $550^{\circ}C$ and $750^{\circ}C$ are presumed to be spinel structure and a single phase of the layered-rock-salt, respectively. The RMS roughness and grain size of the films which annealed at $750^{\circ}C$ has similar values for annealing time 10 and 30 min, while for annealing time 120 min surface roughness, grain size increase and pore appearance were observed. The first discharge capacity of $LiCoO_2$ thin films annealed at $750^{\circ}C$ for 10, 30 and 120 min is about 54.5, 56.8 and $51.87{\mu}Ah/cm^2{\mu}m$, respectively. Corresponding capacity retention at 50th cycle is 97.25, 76.69, 77.19%.

• Journal of the Korean Electrochemical Society
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• v.11 no.4
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• pp.284-288
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• 2008

Sn-thin film as high capacitive anode for thin film lithium-ion battery was prepared by organic-electrolyte electroplating using Sn(II) acetate. Electrolytic solution including $Li^+$ and $Sn^{2+}$ had 3 reduction peaks at cyclic voltammogram. Current peak at $2.0{\sim}2.5\;V$ region correspond to the electroplating of Sn on Ni substrate. This potential value is lower than 2.91 V vs. $Li^+/Li^{\circ}$, of the standard reduction potential of $Sn^{2+}$ under aqueous media. It is the result of high overpotential caused by high resistive organic electrolytic solution and low $Sn^{2+}$ concentration. Physical and electrochemical properties were evaluated using by XRD, FE-SEM, cyclic voltammogram and galvanostatic charge-discharge test. Crystallinity of electroplated Sn-anode on a Ni substrate could be increased through heat treatment at $150^{\circ}C$ for 2 h. Cyclic voltammogram shows reversible electrochemical reaction of reduction(alloying) and oxidation(de-alloying) at 0.25 V and 0.75 V, respectively. Thickness of Sn-thin film, which was calculated based on electrochemical capacity, was $7.35{\mu}m$. And reversible capacity of this cell was $400{\mu}Ah/cm^2$.

• Korean Journal of Materials Research
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• v.13 no.3
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• pp.174-179
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• 2003

Thin copper films were grown by electrodeposition on copper seed layers which were grown by sputtering of an ultra-pure copper target on tantalum nitride-coated silicon wafers and subsequently, cleaned in ECR plasma. The copper films were then subjected to ⅰ) vacuum annealing, ⅱ) rapid thermal annealing (RTA) and ⅲ) rapid thermal nitriding (RTN) at various temperatures over different periods of time. XRD, SEM, AFM and resistivity measurements were done to ascertain the optimum heat treatment condition for obtaining film with minimum resistivity, predominantly (111)-oriented and smoother surface morphology. The as-deposited film has a resistivity of ∼6.3 $\mu$$\Omega$-cm and a relatively small intensity ratio of (111) and (200) peaks. With heat treatment, the resistivity decreases and the (111) peak becomes dominant, along with improved smoothness of the copper film. The optimum condition (with a resistivity of 1.98 $\mu$$\Omega$-cm) is suggested as the rapid thermal nitriding at 400oC for 120 sec.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.6-8
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• 2005

The optical and electrical properties of indium tin oxide (ITO) thin films deposited at room temperature can be substantially enhanced by adopting a two-step process. In the first step, the films (50 nm thick) were grown by pulsed laser deposition (PLD) on glass substrate at room temperature and quickly annealed at $400^{\circ}C$ in nitrogen ambient for 1 minute by using rapid thermal annealing method. The process was completed by additional deposition (150 nm thick) on annealed film at room temperature. High quality ITO films grown by two-step process at room temperature could be obtained with the resistivity of $3.02{\times}10^{-4}{\Omega}cm$, the carrier mobility of 32.07 $cm^2/Vs$, and the transparency above 90 % in visible region mainly due to the enhancement of the film crystallinity and the increase of grain size.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1341-1342
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• 2006

Electrical characteristics of field-effect thin film transistors (TFTs) with p-channels of CdTe/CdHgTe core-shell nanocrystals are investigated in this paper. For the fabrication of bottom- and top-gate TFTs, CdTe/CrHgTe nanocrystals synthesized by colloidal method are first dispersed on oxidized p+ Si substrates by spin-coating, the dispersed nanoparticles are sintered at $150^{\circ}C$ to form the channels for the TFTs, and $Al_{2}O_{3}$ layers are deposited on the channels. A representative bottom-gate field-effect TFT with a bottom-gate $SiO_2$ layer exhibits a mobility of $0.21cm^2$/ Vs and an Ion/Ioff ratio of $1.5{\times}10^2$ and a representative top-gate field-effect TFT with a top-gate $Al_{2}O_{3}$ layer provides a field-effect mobility of $0.026cm^2$/ Vs and an Ion/Ioff ratio of $2.5{\times}10^2$. $Al_{2}O_{3}$ was deposited for passivation of CdTe/CdHgTe core-shell nanocrystal layer, resulting in enhanced hole mobility, Ior/Ioff ratio by 0.25, $3{\times}10^3$, respectively. The CdTe/CdHgTe nanocrystal-based TFTs with bottom- and top gate geometries are compared in this paper.