• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.80-81
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• 2012

Recently, one of the critical issues in the etching processes of the nanoscale devices is to achieve ultra-high aspect ratio contact (UHARC) profile without anomalous behaviors such as sidewall bowing, and twisting profile. To achieve this goal, the fluorocarbon plasmas with major advantage of the sidewall passivation have been used commonly with numerous additives to obtain the ideal etch profiles. However, they still suffer from formidable challenges such as tight limits of sidewall bowing and controlling the randomly distorted features in nanoscale etching profile. Furthermore, the absence of the available plasma simulation tools has made it difficult to develop revolutionary technologies to overcome these process limitations, including novel plasma chemistries, and plasma sources. As an effort to address these issues, we performed a fluorocarbon surface kinetic modeling based on the experimental plasma diagnostic data for silicon dioxide etching process under inductively coupled C4F6/Ar/O2 plasmas. For this work, the SiO2 etch rates were investigated with bulk plasma diagnostics tools such as Langmuir probe, cutoff probe and Quadruple Mass Spectrometer (QMS). The surface chemistries of the etched samples were measured by X-ray Photoelectron Spectrometer. To measure plasma parameters, the self-cleaned RF Langmuir probe was used for polymer deposition environment on the probe tip and double-checked by the cutoff probe which was known to be a precise plasma diagnostic tool for the electron density measurement. In addition, neutral and ion fluxes from bulk plasma were monitored with appearance methods using QMS signal. Based on these experimental data, we proposed a phenomenological, and realistic two-layer surface reaction model of SiO2 etch process under the overlying polymer passivation layer, considering material balance of deposition and etching through steady-state fluorocarbon layer. The predicted surface reaction modeling results showed good agreement with the experimental data. With the above studies of plasma surface reaction, we have developed a 3D topography simulator using the multi-layer level set algorithm and new memory saving technique, which is suitable in 3D UHARC etch simulation. Ballistic transports of neutral and ion species inside feature profile was considered by deterministic and Monte Carlo methods, respectively. In case of ultra-high aspect ratio contact hole etching, it is already well-known that the huge computational burden is required for realistic consideration of these ballistic transports. To address this issue, the related computational codes were efficiently parallelized for GPU (Graphic Processing Unit) computing, so that the total computation time could be improved more than few hundred times compared to the serial version. Finally, the 3D topography simulator was integrated with ballistic transport module and etch reaction model. Realistic etch-profile simulations with consideration of the sidewall polymer passivation layer were demonstrated.

• Proceedings of the Korean Society of Crop Science Conference
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• 2017.06a
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• pp.240-240
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• 2017

Quinoa (Chenopodium quinoa Willd.) is one of the ancient crops cultivated in the Andes region at an altitude of 3,500-4000m in Chile and Bolivia from 5000 BC. It contains a large amount of protein, minerals and vitamins in comparison with other crops. The cultivation area has been increasing worldwide because of its excellent resistance to various abiotic stress such as salinity, drought and low temperature. ${\gamma}$-Ray radiation of high dose is often used as a tool to induce mutations in plant breeding, but it has a deleterious effect on organisms. However, the radiation may have a positive stimulatory effect of 'hormesis' in the low dose range. This experiment was carried out to investigate the optimum dose range for creating the quinoa genetic resources and to investigate the hormesis effect at low dose on the quinoa. This experiment was performed for 120 days from November, 2016 to February, 2017 in the greenhouse of Gyeongsang National University. ${\gamma}$-Ray radiation was irradiated to seeds at 0 Gy, 50 Gy, 100 Gy, 200 Gy, 300 Gy, 400 Gy, 600 Gy, 800 Gy and 1000 Gy for 8 hours. (50 Gy) using the low level radiation facility ($Co^{60}$) of Cooperative Research Institute of Radiation Research Institute, KAERI. Fifty seeds were placed on each petri dish lined with wet filter paper and germination rate was measured at a time interval of 2 hours for 40 hrs. The length of the root length was measured one week after germination. Each treatment was carried out in 3 replicates. The growth of seedlings were investigated for 10 days after transplanting of 30 day-old seedlings. The plant height, NDVI, SPAD, Fv/Fm, and panicle weight were measured. The germination rate was highest at 50Gy and 0Gy and the rate of seeds treated with 400Gy or higher rate decreased to 25% of the seeds treated with 50Gy. The emergence rate of seedling in pot experiment was higher at the dose of 200 Gy, 300 Gy and 400 Gy than at 0 and 50Gy. However, the rate was lower at strong radiation higher than 600Gy at which $1^{st}$ leaf was not expanded fully and dead due to extreme overgrowth at 44 days after treatment (DAT). The highest value of panicle weight was observed at 50Gy (6.15g) and 100Gy (5.57g). On the other hand, the weight at high irradiated dose of 300Gy and 400Gy was decreased by about 55% compared to low dose (50 Gy). NDVI measurement also showed the highest value at 50 Gy as the growth progressed. SPAD was the highest at 400 Gy and showed positive correlation with irradiation dose except 0 Gy. Fv/Fm was high at 50 Gy up to 30 DAT and no difference between treatments was observed except for 400 Gy from 44 DAT. The plant height was the highest in 50Gy during the growing period and was higher in the order of 50Dy, 100Gy, 0Gy, 200Gy, 300Gy and 400Gy in 88 DAT. In this experiment, the optimal radiation dose for hormesis was 50Gy and 100Gy, and the optimal radiation dose for mutagenesis seems to be 400 Gy.

• Proceedings of the Korea Society of Poultry Science Conference
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• 2003.07b
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• pp.37-54
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• 2003

It has been recognized that the hen. like its mammalian counterparts. provides young chicks with antibodies as protection against hostile invaders. This system facilitates the transfer of specific antibodies from serum to egg yolk. and provides a supply of antibodies called immunoglobulin Y(IgY) to the developing embryo and the hatched chick. The protection against pathogens that the relatively immuno-incompetent newly hatched chick has. is through transmission of antibodies from the mother via the egg. Egg yolk. therefore. can be loaded with a large amount of IgY against pathogens which can immobilize the existing or invading pathogens during the embryo development or in day-old chicks. Thus. the immunization of laying hens to various pathogens results in production of different antigen-specific IgY in eggs. Egg yolk contains 8~20 mg of immunoglobulins (IgY) per $m\ell$ or 136~340 mg per yolk suggesting that more than 30 g of IgY can be obtained from one immunized hen in a year. By immunizing laying hens with antigens and collecting IgY from egg yolk. low cost antibodies at less than ＄10 per g compared to more than ＄20.000 per g of mammalian IgG can be obtained. This IgY technology opens new potential market applications in medicine. public health veterinary medicine and food safety. A broader use of IgY technology could be applied as biological or diagnostic tool. nut-raceutical or functional food development. oral-supplementation for prophylaxis. and as pathogen-specific antimicrobial agents for infectious disease control. This paper has emphasized that when IgY-loaded chicken eggs are produced and consumed. the specific antibody binds. immobilizes and consequently reduces or inhibits the growth or colony forming abilities of microbial pathogens. This concept could serve as an alternative agent to replace the use of antibiotics. since today. more and more antibiotics are less effective in the treatment of infections. due to the emergence of drug-resistant bacteria.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2005.06a
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• pp.311-318
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• 2005

Transparency on the Total System Performance Assessment (TSPA) is the key issue to enhance the public acceptance for a permanent high level radioactive repository. To approve it, all performances on TSPA through Quality Assurance is necessary. The integrated Cyber R&D Platform is developed by KAERI using the T2R3 principles applicable for five major steps in R&D's. The proposed system is implemented in the web-based system so that all participants in TSPA are able to access the system. It is composed of FEAS (FEp to Assessment through Scenario development) showing systematic approach from the FEPs to Assessment methods flow chart, PAID (Performance Assessment Input Databases) showing PA(Performance Assessment) input data set in web based system and QA system receding those data. All information is integrated into Cyber R&D Platform so that every data in the system can be checked whenever necessary. For more user-friendly system, system upgrade included input data & documentation package is under development. Throughout the next phase R&D, Cyber R&D Platform will be connected with the assessment tool for TSPA so that it will be expected to search the whole information in one unified system.