• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.3
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• pp.162-168
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• 2006

To fabricate nanometer scale InGaAs HEMTs, we have successfully developed various novel nano-patterning techniques, including sidewall-gate process and e-beam resist flowing method. The sidewall-gate process was developed to lessen the final line length, by means of the sequential procedure of dielectric re-deposition and etch-back. The e-beam resist flowing was effective to obtain fine line length, simply by applying thermal excitation to the semiconductor so that the achievable final line could be reduced by the dimension of the laterally migrated e-beam resist profile. Applying these methods to the device fabrication, we were able to succeed in making 30nm $In_{0.7}Ga_{0.3}As$ HEMTs with excellent $f_T$ of 426GHz. Based on nanometer scale InGaAs HEMT technology, several high performance millimeter-wave integrated circuits have been successfully fabricated, including 77GHz MMIC chipsets for automotive radar application.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.3 s.345
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• pp.68-77
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• 2006

This paper presents a new Design-for-Testability (DfT) circuit for 4.5-5.5GHz low noise amplifiers (LNAs). The DfT circuit measures gain, noise figure, input impedance, input return loss, and output signal-to-noise ratio for the LNA without external expensive equipment. The DfT circuit is designed using 0.18m SiGe technology. The circuit utilizes input impedance matching and DC output voltage measurements. The technique is simple and inexpensive.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.45 no.7
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• pp.77-80
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• 2008

In this paper, low phase noise VCO using novel compact microstrip spiral resonator is proposed. A spiral resonator has super compact dimension, low insertion losses in the passband and high level of rejection in the stopband with sharp cutoff and a large coupling coefficient value, which makes a high Q value, and has reduced the phase noise. To increase the tuning range of VCO, varactor diode has been connected at the tunable negative resistance in VCO. This VCO has presented the oscillation frequency of $5.686{\sim}5.841GHz$, harmonics -29.83 dBc and phase noise of $-115.16{\sim}-115.17dBc/Hz$ at the offset frequency of 100 KHz.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.7
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• pp.776-781
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• 2004

We report the performance of a four-element, 11.67 GHz, $high-{T}_c$ superconducting (HTS) microstrip antenna array with corporate feed network. The HTS antenna array used in this work had a circular polarization for direct broadcasting satellite (DBS) system. Our array antennas were designed and built on a 0.5 mm thick MgO substrate. To compare the superconducting antennas with normal conducting counterpart, One antenna pattern was fabricated from gold thin film, and a second pattern was fabricated from ${YBa}_2{Cu}_3{O}_7-x(YBCO)$ superconducting thin film. To improve the axial ratio of circularly polarized arrays, sequential rotation technique were used. Efficiency, radiation pattern, return loss and bandwidth were measured for both antennas at cryogenic temperature and room temperature. The array produced good circular polarization, and the gain of the array at 77 K, relative to a copper array at room temperature was approximately 1.54 dB. The measured return loss of our HTS antenna array was 35.79 dB at the resonant frequency of 11.67 GHz and The total effective bandwidth was about 3.4 %. The results showed that high-temperature superconductors, when used in microstrip arrays, improved the efficiency of the HTS antenna array for circularly polarization.

• Journal of electromagnetic engineering and science
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• v.1 no.1
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• pp.73-77
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• 2001

We studied the fabrication of GaAs-based pseudomorphic high electron mobility transistors(PHEMT`s) for the purpose of millimeter- wave applications. To fabricate the high performance GaAs-based PHEMT`s, we performed the simulation to analyze the designed epitaxial-structures. Each unit processes, such as 0.1 m$\mu$$\Gamma$-gate lithography, silicon nitride passivation and air-bridge process were developed to achieve high performance device characteristics. The DC characteristics of the PHEMT`s were measured at a 70 $\mu$m unit gate width of 2 gate fingers, and showed a good pinch-off property ($V_p$= -1.75 V) and a drain-source saturation current density ($I_{dss}$) of 450 mA/mm. Maximum extrinsic transconductance $(g_m)$ was 363.6 mS/mm at $V_{gs}$ = -0.7 V, $V_{ds}$ = 1.5 V, and $I_{ds}$ =0.5 $I_{dss}$. The RF measurements were performed in the frequency range of 1.0~50 GHz. For this measurement, the drain and gate voltage were 1.5 V and -0.7 V, respectively. At 50 GHz, 9.2 dB of maximum stable gain (MSG) and 3.2 dB of $S_{21}$ gain were obtained, respectively. A current gain cut-off frequency $(f_T)$ of 106 GHz and a maximum frequency of oscillation $(f_{max})$ of 160 GHz were achieved from the fabricated PHEMT\\`s of 0.1 m$\mu$ gate length.h.

• JOURNAL OF ELECTRICAL WORLD
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• s.257
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• pp.70-77
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• 1998

21세기를 지향하여 음성뿐만 아니라 데이터, 나아가서는 화상까지도 쌍방향전송을 가능케하는 고도정보통신, 소위 멀티미디어의 세계가 구현되어 가고 있다. 이 멀티미디어의 세계는 (1)고속$\cdot$대용량, (2)글로벌, (3)모바일(퍼스널)의 키워드로 특징지을 수 있는데, 여기에는 화합물반도체를 베이스로하는 광$\cdot$마이크로파디바이스가 깊이 관련되어 있다. 마이크로파디바이스를 살펴보면 소위 ''텔레데식'' 계획으로 대표되는 다량의 인공위성을 이용한 글로벌한 고속$\cdot$대용량통신에는 30 GHz라는 초고주파기술이 필수이며, HEMT등의 고성능화합물 반도체디바이스가 반드시 필요하다. 또 2.5~10Gbps, 나아가서는 40Gbps의 고속$\cdot$장거리 통신에는 광 디바이스가 결정적인 역할을 하고 있다. 한편 지수 함수적으로 증대하고 있는 정보의 축적은 광디스크의 진보에 힘입은 바가 크다. 보다 많은 대용량 화상데이터의 축적과 읽기$\cdot$쓰기를 할 수 있는 DVD(Digital Versatile Disc)-ROM, DVD-RAM에 대하여도 시장 조성이 목전에 다가오고 있다. 이와 같이 광$\cdot$마이크로파디바이스는 정보$\cdot$통신의 프런트 엔드를 걸머진 중핵디바이스로서 앞으로 멀티미디어를 근간으로 하여 성장해 갈 것으로 생각된다.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.10 no.1
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• pp.77-83
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• 1999

Due to the high cost of constructing anechoic chamber, the multi-usage of a chamber in various applications is very effective in terms of cost as well as space. In this paper, we describe an anechoic chamber currently used at SK Telecom in Korea. This is designed for the measurements of both far/near field antenna and EMC/EMI in the identical chamber. This anechoic chamber and measurement system support antenna test in the frequency range of 150 MHz to 40 GHz and meet the requirement of ANSI C63.4 and CISPR 16.1 for EMC/EMI.

• Journal of electromagnetic engineering and science
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• v.8 no.3
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• pp.110-113
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• 2008

In this paper, we designed and fabricated an electromagnetic(EM) wave absorber for automotive radar in cars using $TiO_2$ as a dielectric material and chlorinated polyethylene(CPE) as a binder. First of all, we confirmed that the optimum composition ratio of $TiO_2$ was about 70 wt.%. The complex relative permittivity of a sample containing $TiO_2$: CPE=70:30 wt.% was calculated from S-parameter. The EM wave absorption abilities were simulated for the EM wave absorbers of different thickness using the calculated relative permittivity, and the EM wave absorber was manufactured based on the simulated design. A comparison of simulated and measured results is in good agreement. Measurement shows that a 1.85 mm thick absorber has absorption ability higher than 20 dB in the frequency range of $76{\sim}77$ GHz for automotive radars.

• 한국공간정보시스템학회:학술대회논문집
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• 2007.06a
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• pp.71-77
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• 2007

USN은 유비쿼터스 환경의 기반기술로서 저전력, 저비용 등 소규모의 특성을 갖고, 기지국과 같은 기반시설이 아닌 Ad_hoc 기법을 통해 통신한다. 일반적으로 센서노드 네트워크 구성을 위해 인력을 동원한 현장실측이나 또는 무작위 설치로 인하여 시간과 비용의 낭비와 환경적인 피해가 발생한다. 또한 중계망의 노드장애 등 관리를 위한 모니터링에 있어 GIS의 분석과 가시화 기능을 적극 활용할 필요가 있다. 따라서 본 연구는 GIS를 이용하여 RF 전파의 경로손실을 측정하고 중계노드의 RSSI를 산출하였으며, 중계노드의 구성과 중계경로망도 제작기법을 제시하였다. 연구지역은 경북대학교권역이며 RF대역은 국제표준인 2.4GHz를 기준으로 하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.77-80
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• 1998

Recently, extending the local broadcasting and increasing lots of informations. The low-loss communication cable is required in proportion as frequency .The reason of transportation loss causes to using the high frequencies like hundreds of MHz or decades of GHz. For the low transportation loss. It is required the developing-technology of foaming and the high foamed insulator with the dielectric ratio of the nearest to 1. Therefor, there is the purpose of developing the insulating materials for the low dielectric ratio. Also it is important to measure the attenuation, which is one of the important parameters.sa the evaluation of transportation characteristic with frequency in the communication cable. In this paper,the result showed that the dielectric ratio(1.4) of the nearest to 1 and low attenuation with high frequency were very related to the transportation and reflection characteristics such as propagation velocity (82.27%). Delay time and voltage standing wave ratio(VSWR).