• Title/Summary/Keyword: 700 MHz

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A High-Isolation MIMO Antenna with Dual-Port Structure for 5G Mobile Phones

  • Yang, Hyung-kyu;Lee, Won-Woo;Rhee, Byung-Ho
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.12 no.4
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    • pp.1458-1470
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    • 2018
  • In this letter, a new dual-port Multiple-Input Multiple-Output (MIMO) antenna is introduced which has two independent signal feeding ports in a single antenna element to achieve smaller antenna volumes for the 5G mobile applications. The dual-port structure is implemented by adding a cross coupled semi-loop (CCSL) antenna as the secondary radiator to the ground short of inverted-F antenna (IFA). It is found that the port to port isolation is not deteriorated when an IFA and CCSL is combined to form a dual-port structure. The isolation property of the proposed antenna is compared with a polarization diversity based dual-port antenna proposed in the literature [9]. The operating frequency range is 3.3-4.0 GHz which is suitable for places where $4{\times}4$ MIMO systems are supposed to be deployed such as in China, EU, Korea and Japan at the band ${\times}$ (3.3 - 3.8GHz. The measured 6-dB impedance bandwidths of the proposed antennas are larger than 700 MHz with isolation between the feeding ports higher than 18 dB [1-2]. The simulation and measurement results show that the proposed antenna concept is a very promising alternative for 5G mobile applications.

The Surface and Electrical Properties of BST Thin Films Prepared by Sol-Gel Method (Sol-Gel 방법에 의한 BST 박막의 표면 및 전기적 특성)

  • 홍경진;조재철
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.6
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    • pp.504-510
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    • 2002
  • Recently, thin film capacitors of high dielectric constant and low leakage current are applied to integrated devices. In this study, (Ba, Sr)$TiO_3$ (BST) thin films for low cost were prepared by Sol-Gel method. BST solution was spin-coated on Pt/$SiO_2$/Si substrate at 4,000 rpm for 10 seconds. Coating process was repeated 3 times and then sintered at $700^{\circ}C$ for 30 minutes. Structural and electrical characteristics of each specimen were analyzed by TG-DTA, SEM, fractal phenomenon, voltage-current and dielectric factor. Thickness of BST ceramics thin films are about 2,600~2,800 ${\AA}$ at depositing 3 times. Dielectric constant of thin films was decreased in 1 kHz~1 MHz. Dielectric constant and loss to frequency were 250 and 0.02 in $(Ba_{0.7}Sr_{0.3})TiO_3$ (BST3). Leakage current of BST3 was $10^{-9}\sim10^{-11}$/ A under 3 V.

Preparation and PTC properties of thin films $BaTiO_3$ ceramic system using RF/DC magnetron sputtering method (RF/DC 마그네트론 스퍼터법을 이용한 $BaTiO_3$계 세라믹 박막의 제조와 PTC특성)

  • 박춘배;송민종;김태완;강도열
    • Electrical & Electronic Materials
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    • v.8 no.1
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    • pp.77-82
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    • 1995
  • PTCR(Positive Temperature Coefficient of Resistivity) thermistor in thin film BaTiO$_{3}$ system was prepared by using radio frequency(13.56 MHz) and DC magnetron sputter equipment. Polycrystalline, surface structure, and R-T(Resistivity-Temperature) characteristics of the specimens were measured by X-ray diffraction(D-Max3, Rigaku, Japan), SEM(Scanning Electron Microscopy: M.JSM84 01, Japan), and insulation resistance measuring system (Keithley 719), respectively. Thin films characteristics of the thermistor showed different properties depending on the substrate even with the same sputtering condition. The thin film formed on the A1$_{2}$O$_{3}$ substrate showed a good crystalline and a low resistivity at below curie point. However, the thin films prepared on slide glass and Si wafer were amorphous. The thicknesses of the three samples prepared under the same process conditions were 700[.angs.], 637.75[.angs.], and 715[.angs.], respectively.

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Implementation and Design of Digital Instruments System using FPGA (FPGA를 이용한 디지털 계측 시스템의 설계 및 구현)

  • Choi, Hyun Jun;Jang, Seok Woo
    • Journal of Korea Society of Digital Industry and Information Management
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    • v.9 no.2
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    • pp.55-61
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    • 2013
  • A field-programmable gate array (FPGA) is an integrated circuit designed to be configured by a customer or a designer after manufacturing. The FPGA configuration is generally specified using a hardware description language (HDL), similar to that used for an application-specific integrated circuit (ASIC) (circuit diagrams were previously used to specify the configuration, as they were for ASICs, but this is increasingly rare). Contemporary FPGAs have large resources of logic gates and RAM blocks to implement complex digital computations. In this paper, we implement a system of digital instrumentation using FPGA. This system consists of the trigger part, memory address controller part, control FSM part, Encoder part, LCD controller part. The hardware implement using FPGA and the verification of the operation is done in a PC simulation. The proposed hardware was mapped into Cyclone III EP2C5Q208 from Altera and used 1,700(40%) of Logic Element (LE). The implemented circuit used 24,576-bit memory element with 6-bit input signal. The result from implementing in hardware (FPGA) could operate stably in 140MHz.

Drying Characteristics of Plating Sludge by Microwave (마이크로파 가열에 의한 도금슬러지 건조특성)

  • 문경환;손종렬;김덕찬
    • Journal of environmental and Sanitary engineering
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    • v.13 no.1
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    • pp.9-15
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    • 1998
  • Microwave heating and drying processes have been well established in various industrial applications. Feasibilities of successful application of microwave drying to many material have been shown on the laboratory or pilot-plant scale. The microwave drying behavior of plating sludge are considered in this paper. The plating sludge containing 70%, 80% and 90% water exposed to microwave power at 2,450 MHz, 700W. An experimental microwave drying apparatus was designed and constructed to monitor weight loss during drying. By studying the drying characteristic curve, the moisture in sludge was almost classified into two categories : free moisture and intestinal moisture. And the critical moisture contents at which the drying rate ceases to be constant were from 10.1 to 10.5%. A simple drying model is proposed which may be used to describe drying behavior of plating sludge. The constant rate and the falling rate periods in microwave drying were addressed separately. From the eqation of constant rate period the drying rate constants decreased exponentially with increasing depth. Microwave heating compared with conventional heating offered higher heating rates from 9 to 16 times. Therefore, microwave drying process can be effective in removing moisture from plating sludge.

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Check system for wearing hard hat with wireless sensor network (무선 센서 네트워크를 이용한 안전모 착용 확인 시스템)

  • Jang, Mun-Suck;Yeom, Mun-Jin;Song, In-Yong;Kwon, Oh-Sang;Lee, Eung-Hyck;Choi, Sang-Bang
    • Proceedings of the KIEE Conference
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    • 2007.10a
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    • pp.209-210
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    • 2007
  • 본 연구에서는 건설현장에서 빈번히 발생하는 안전사고를 줄이기 위해 근로자의 안전모 턱끈 착용을 도와주고 안전관리 감독자가 쉽게 확인 및 관리할 수 있는 전자식 안전모 착용 확인 시스템을 개발하였다. 안전모 착용을 확인하기 위해 마그네틱 근접 센서를 안전모 턱끈에 장착하여 안전모 착용 여부를 검출할 수 있게 하였다. 그리고 무선 센서 네트워크를 구성하기 위해 424.700MHz 주파수를 사용하는 무선 모듈을 개발하여 안전모의형에 장착하여 센서 노드(Sensor Node)를 구성하였으며, 메쉬 토폴로지(Mesh Topology)를 적용하였다. 그리고 중앙 관리실에서 근로자의 상황 인지를 위한 안전모 확인 모니터링 시스템을 개발하였다. 본 시스템으로 인하여 근로자의 안전을 도모하고, 안전 사고에서 근로자의 부상 및 인명 손실을 최소화할 수 있으며, 건설용 엘리베이터 안전 상황 인지, 타워크레인 안전 문제등의 시스템으로 활용이 가능할 것이다.

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Modeling the Properties of the PECVD Silicon Dioxide Films Using Polynomial Neural Networks

  • Han, Seung-Soo;Song, Kyung-Bin
    • 제어로봇시스템학회:학술대회논문집
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    • 1998.10a
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    • pp.195-200
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    • 1998
  • Since the neural network was introduced, significant progress has been made on data handling and learning algorithms. Currently, the most popular learning algorithm in neural network training is feed forward error back-propagation (FFEBP) algorithm. Aside from the success of the FFEBP algorithm, polynomial neural networks (PNN) learning has been proposed as a new learning method. The PNN learning is a self-organizing process designed to determine an appropriate set of Ivakhnenko polynomials that allow the activation of many neurons to achieve a desired state of activation that mimics a given set of sampled patterns. These neurons are interconnected in such a way that the knowledge is stored in Ivakhnenko coefficients. In this paper, the PNN model has been developed using the plasma enhanced chemical vapor deposition (PECVD) experimental data. To characterize the PECVD process using PNN, SiO$_2$films deposited under varying conditions were analyzed using fractional factorial experimental design with three center points. Parameters varied in these experiments included substrate temperature, pressure, RF power, silane flow rate and nitrous oxide flow rate. Approximately five microns of SiO$_2$were deposited on (100) silicon wafers in a Plasma-Therm 700 series PECVD system at 13.56 MHz.

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A.C.impedance properties on $RuO_2$-based thick film resistors ($RuO_2$계 후막저항체의 교류 임피던스 특성)

  • 구본급;김호기
    • Electrical & Electronic Materials
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    • v.3 no.4
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    • pp.315-324
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    • 1990
  • 저저항(DuPont 1721, 100.OMEGA./sq.)과 고저항(1741, 10K.OMEGA./sq.)의 두 Ru계 후막저항체를 여러 조건에서 소결하여 소결막의 복소임피던스 특성과 임피던스의 주파수의존성을 1KHz-13MHz의 주파수 범위에서 조사하였다. 저저항 1721계의 경우 600.deg.C이상에서 소결한 모든 시편이 거의 저항성분(R)만으로 구성된 등가회로에 해당되는 복소임피던스 거동을 보였으며 임피던스에 미치는 주파수 의존성은 크게 나타나지 않았는데 5KHz까지는 주파수에 따라 변화가 없다가 그 이상의 주파수에서 주파수 증가에 따라 약간씩 증가하였다. 고저항 1741 후막저항체의 경우는 소결조건에 따라 복소임피던스 거동과 임피던스에 미치는 주파수 의존성이 달리 나타났다. 600.deg.C에서는 용량(C) 성분만으로 구성된 등가회로에 해당하는 복소임피던스 거동을 얻었고 주파수 증가에 따라 임피던스가 직선적으로 감소하였으며 700.deg.C이상 900.deg.C까지는 저항(R)과 용량(C)이 병렬로 연결되는 형태의 등가회로에 해당하는 복소임피던스 거동을 얻었고 이때의 임피던스의 주파수 의존성은 저주파수 영역에서는 임피던스가 주파수에 변함없이 일정하다가 5KHz이상의 주파수에서는 주파수 증가에 따라 임피던스가 직선적으로 감소하였다. 1000.deg.C반응에서의 복소임피던스 거동은 RCL성분이 병렬로 연결된 형태의 등가회로에 해당되는 결과를 얻었으며 임피던스도 작아지고 주차수 의존성도 현저하지 않았다.

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The Properties of BST Thin Films by Thickness (두께 변화에 따른 BST 박막의 특성)

  • 홍경진;민용기;조재철
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.455-458
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    • 2001
  • The thin films of high permitivity in ferroelectric materials using a capacitor are applied to DRAMs and FRAMs. (Ba, Sr)TiO$_3$ thin films as ferroelectric materials were prepared by the sol-gel method and made by spin-coating on the Pt/Ti/SiO$_2$/Si substrate at 4,700 [rpm] for 10 seconds. The devices of BST thin films to composite (Ba$\_$0.7/Sr$\_$0.3/)TiO$_3$ were fabricated by changing of the depositing layer number on Pt/Ti/SiO$_2$/Si substrate. The thin film capacitor to be ferroelectric devices was investigated by structural and electrical properties. The thickness of BST thin films at each coating numbers 3, 4 and 5 times was 2500[${\AA}$], 3500[${\AA}$], 3800[${\AA}$]. The dielectric factor of thin film when the coating numbers were 3, 4 and 5 times was 190, 400 and 460 on frequency 1[MHz]. The dielectric loss of BST thin film was linearly increased by increasing of the specimen area.

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Miniaturization of Embedded Bandpass Filter in LTCC Multilayer Substrate for WiMAX Applications

  • Cho, Youngseek;Choi, Seyeong
    • Journal of information and communication convergence engineering
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    • v.11 no.1
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    • pp.45-49
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    • 2013
  • A compact radio frequency (RF) bandpass filter (BPF) in low temperature co-fired ceramic (LTCC) is suggested for WiMAX applications. The center frequency ($f_0$) of the BPF is 5.5 GHz and its pass band or 3-dB bandwidth is 700 MHz to cover all the three major bands, low and middle unlicensed national information infrastructure (U-NII; 5.15-5.35 GHz), World Radiocommunication Conference (5.47-5.725 GHz), and upper U-NII/industrial, scientific, and medical (ISM) (5.725-5.85 GHz), for the WiMAX frequency band. A lumped circuit element design-the 5th order capacitively coupled Chebyshev BPF topology-is adopted. In order to design a compact RF BPF, a very thin ($43.18{\mu}m$) ceramic layer is used in LTCC substrate. An interdigital BPF is also designed in silicon substrate to compare the size and performance of the lumped circuit element BPF. Due to the high relative dielectric constant (${\varepsilon}_r$ = 11.9) of the silicon substrate, the quarter-wavelength resonator of the interdigital BPF can be reduced. In comparison to the 5th order interdigital BPF at $f_0$ = 5.5 GHz, the lumped element design is 24% smaller in volume and has 17 and 7 dB better attenuation characteristics at $f_0{\pm}0.75$ GHz.