• ETRI Journal
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• v.11 no.4
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• pp.139-149
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• 1989

Excimer laser를 이용한 투영노광기술은 '80년대 초 $0.5\mum$ 이하의 패턴 형성에 시도된 이래 점진적인 발전을 이루어 왔으며 기존 광노광기술의 연장선상에서 64M bit DRAM 제조를위한 핵심 노광기술이 될 것이다. 본 논문에서는 차세대 노광장비로서의 excimer stepper가 갖는 중요성을 고찰하고 대량생산을 위한 노광장비의 개발방향을 제시하였다. 먼저단파장화에 의한 투과도 저하로 인하여 발생하는 투영광학계의 문제점을 살펴보고 이에 따른 광원의 요구조건을 도출하였다. 그리고excimer stepper를 광원, 조명계, 투영계, 정렬계, stage계 및 제어계등 기능별로 분류한 후 각각의 문제점 및 설계조건을 제시하였다.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.239-243
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• 1999

At Present, 200mm wafer technology is being applied for commercial fabrications of 64, 128, and 256 M DRAM devices, and 300mm technology will be evolved for 1G DRAM devices in the early 21th century, recognizing limitations of several process technologies. In particular recognition has been realized in harmful effects of surface contamination of trace metals introduced during devicing processes. Such a guide line for surface metal contamination has been proposed as 1E9 and 1E10 atoms/$\textrm{cm}^2$ of individual metal contamination for wafering and devicing of 1G DRAM, respectively, and so its measurement limit should be at least 1E8 atoms/$\textrm{cm}^2$. The detection limit of present measurement systems is 2E9 atoms/$\textrm{cm}^2$ obtainable with TRXFA(Total Reflection X-Ray Fluorescence Analysis). TRXFA is nondestructive and the simplest in terms of operation, and it maps the whole wafer surfaces but needs detection improvement. X-Ray intensity produced with synchrotron accelerator is much higher than that of conventional X-ray sources by order of 4-5 magnitudes. Hence theoretically its reactivity with silicon surfaces is expected to be much higher than the conventional one, realizing improvement of detection limit. X-ray produced with synchrotron accelerator is illuminated at a very low angle with silicon wafer surfaces such as 0.1 degree and reflects totally. Hence informations only from surface can be collected and utilized without overlapping with bulk informations. This study shows the total reflection phenomenon and quantitative improvement of detection limit for metallic contamination. It is confirmed that synchrotron X-ray can be a very promising alternative for realizing improvement of detection limit for the next generation devices.

• Journal of the Korea Computer Industry Society
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• v.6 no.5
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• pp.757-766
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• 2005

There have been great demands for higher density SRAM in all area of SRAM applications, such as mobile, network, cache, and embedded applications. Therefore, aggressive shrinkage of 6T Full CMOS SRAM had been continued as the technology advances, However, conventional 6T Full CMOS SRAM has a basic limitation in the cell size because it needs 6 transistors on a silicon substrate compared to 1 transistor in a DRAM cell. The typical cell area of 6T Full CMOS SRAM is $70{\sim}90F^{2}$, which is too large compared to $8{\sim}9F^{2}$ of DRAM cell. With 80nm design rule using 193nm ArF lithography, the maximum density is 72M bits at the most. Therefore, pseudo SRAM or 1T SRAM, whose memory cell is the same as DRAM cell, is being adopted for the solution of the high density SRAM applications more than 64M bits. However, the refresh time limits not only the maximum operation temperature but also nearly all critical electrical characteristics of the products such as stand_by current and random access time. In order to overcome both the size penalty of the conventional 6T Full CMOS SRAM cell and the poor characteristics of the TFT load cell, we have developed $S^{3}$ cell. The Load pMOS and the Pass nMOS on ILD have nearly single crystal silicon channel according to the TEM and electron diffraction pattern analysis. In this study, we present $S^{3}$ SRAM cell technology with 100nm design rule in further detail, including the process integration and the basic characteristics of stacked single crystal silicon TFT.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.12
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• pp.108-114
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• 1995

Recently, along wtih the advance of high-performance system, synchronous DRAM's (SDRAM's) which provide consecutive data output synchronized with an external clock signal, have been reported. However, in the conventional SDRAM's which utilize a multi-stage serial pipelined scheme, the column path is divided into multi-stages depending on CAS latency N. Thus, as the operating speed and CAS latency increase, new stages must be added, thereby causing a large area penalty due to additinal latches and I/O lines. In the proposed register-based parallel pipelined scheme, (N-1) registers are located between the read data bus line pair and the data output buffer and the coming data are sequentially stored. Since the column data path is not divided and the read data is directly transmitted to the registers, the busrt read operation can easily be achieved at higher frequencies without a large area penalty and degradation of internal timing margin. Simulation results for 0.32um-Tech. 4-Bank 64M SDRAM show good operation at 200MHz and an area increment is less than 0.1% when CAS latency N is increased from 3 to 4.. This pipelined scheme is more advantageous as the operating frequency increases.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.4
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• pp.314-321
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• 2006

There have been great demands for higher density SRAM in all area of SRAM applications, such as mobile, network, cache, and embedded applications. Therefore, aggressive shrinkage of 6 T Full CMOS SRAM had been continued as the technology advances. However, conventional 6 T Full CMOS SRAM has a basic limitation in the cell size because it needs 6 transistors on a silicon substrate compared to 1 transistor in a DRAM cell. The typical cell area of 6 T Full CMOS SRAM is $70{\sim}90\;F^2$, which is too large compared to $8{\sim}9\;F^2$ of DRAM cell. With 80 nm design rule using 193 nm ArF lithography, the maximum density is 72 Mbits at the most. Therefore, pseudo SRAM or 1 T SRAM, whose memory cell is the same as DRAM cell, is being adopted for the solution of the high density SRAM applications more than 64 M bits. However, the refresh time limits not only the maximum operation temperature but also nearly all critical electrical characteristics of the products such as stand_by current and random access time. In order to overcome both the size penalty of the conventional 6 T Full CMOS SRAM cell and the poor characteristics of the TFT load cell, we have developed S3 cell. The Load pMOS and the Pass nMOS on ILD have nearly single crystal silicon channel according to the TEM and electron diffraction pattern analysis. In this study, we present $S^3$ SRAM cell technology with 100 nm design rule in further detail, including the process integration and the basic characteristics of stacked single crystal silicon TFT.

• Proceedings of the Korean Information Science Society Conference
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• 2002.04a
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• pp.733-735
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• 2002

반도체 CAD기술과 제조기술의 발전으로 인하여 반도체 집적도가 2001년 2002년 각각 0.35, 0.25마이크론 등으로 급속도로 증가하게 되었으며 이러한 집적토의 향상은 기대치 이상의 시스템 성능 향상을 이룩할 수가 있었다. 그러나 피할 수 없는 제조 공정의 변화와 불완전성으로 인하여 칩 크기에 제한이 따르게 되며 그 이상의 크기에서는 상용화가 불가능할 정도로 수율(Yield)이 현저하게 감소하게 된다. 기존의 대부분 연구가 반도체의 생산 공정의 관점에서 준비되어 활용되는 통계 자료에 근거한 경험의 축적이었다. 그런 연유로, 단지 반도체 생산 부분의 자료에만 치중하다보니 실지 반도체 수율에 가장 큰 영향의 요소인 랜덤 디펙트(random defect) 수율을 고려하지 못하는 치명적인 결점이 있다. 본 연구는 반도체 수율 분석과 수율을 증진시키기 위하여 설계된 도면 중 레이아웃에 해당하는 도면을 입력으로 하여, 반도체 생산 설비 즉 공정의 상태나 변수를 모델링하여 이를 수율 예측을 위한 기분 자료로 사용한다. 즉, 설계 단계에서 수율을 예측함으로써 과거 64M DRAM의 초기 단계에서의 수율과 같은 문제점을 해결할 수 있는 방안을 제시할 뿐 아니라, 비 메모리 칩의 수율을 설계단계에서 제공하는 역할을 한다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2000.10a
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• pp.475-479
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• 2000

The box capacitor structure with H5G-Si described here reliably achieves a cell capacitance of 28fF with a cell area of a 0.482f${\mu}{\textrm}{m}$$^2$ for 128Mbit DRAM. An H5G-Si formation technology with seeding method, which employs Si$_2$H$_{6}$ molecule irradiation and annealing, was applied for realizing 64Mbit and larger DRAMS. By using this technique, grain size controlled H5G-Si can be fabricated on in-situ phosphorous doped amorphous silicon electrodes. The HSG-Si fabrication technology achieves twice the storage capacitance with high reliability for the stacked capacitors.s.

• Proceedings of the Korea Information Processing Society Conference
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• 2012.11a
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• pp.268-270
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• 2012

DRAM 가격의 하락으로 인메모리 컴퓨팅에 대한 연구 및 개발이 다시 활발해지고 있으나 효율적인 메모리 시스템 구성을 위한 연구는 아직 부족한 실정이다. 이에 본 논문은 64 비트 멀티프로세서와 대용량의 메모리로 구성되는 인메모리 컴퓨팅 시스템을 모델링하고, 메모리 크기 및 채널 개수에 따른 시스템의 성능을 시뮬레이션 하였다. 그리고 처리된 트랜잭션의 수를 성능평가의 기준으로 하여 메모리의 크기와 채널 개수에 따른 비용을 고려한 최적의 인메모리 컴퓨팅 메모리 시스템 구조를 제안하였다.