• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.6
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• pp.712-717
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• 2014

The performance of npn SiGe HBT on thin film SOI is investigated at 32 nm technology node by applying body bias. An n-well is created underneath thin BOX to isolate the body biased SOI HBT from SOI CMOS. The results show that the HBT voltage gain and power gain can be programmed by applying body bias to the n-well. This HBT can be used in variable gain amplifiers that are widely used in the receiver chain of RF systems. The HBT is compatible with 32 nm FDSOI technology having 10 nm film thickness and 30 nm BOX thickness. As the breakdown voltage increases by applying the body bias, the SOI HBT with 3 V $V_{CE}$ has very high $f_tBV_{CEO}$ product (839 GHzV). The self heating performance of the proposed SOI HBT is studied. The high voltage gain and power gain (60 dB) of this HBT will be useful in designing analog/RF systems which cannot be achieved using 32 nm SOI CMOS (usually voltage gain is in the range of 10-20 dB).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.10
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• pp.840-846
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• 2000

In this work, small-size, high-performance solenoid-type RF chip inductors utilizing a low-loss Al$_2$O$_3$core material were investigated. The size of the chip inductors fabricated in this work were 15$\times$10$\times$0.7㎣, 2.1$\times$1.5$\times$10㎣, and 2.4$\times$2.0$\times$1.4㎣ and copper (Cu) wire with 40 ㎛ diameter was used as the coils. High frequency characteristics of the inductance, quality factor, and impedance of developed inductors were measured suing an RF Impedance/Material Analyzer (HP4291B with HP16193A test fixture). It was observed that the developed inductors with the number of turns of 7 have the inductance of 33 to 100nH and exhibit the self-resonant frequency (SRF) of .26 to 1.1 GHz. The SRF of inductors decreases with increasing the inductance and the inductors have the quality factor of 60 to 80 in the frequency range of 300 MHz to 1.1 GHz. In this study, small-size solenoid-type RF chip inductors with high inductance and high quality factor were fabricated successfully. It is suggested that the thin film-type inductor is necessary to fabricate the smaller size inductors at the expence of inductance and quality factor values.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• v.1
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• pp.297-300
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• 2006

In this paper, the EM wave absorbers were designed and fabricated for X-band sensors using Carbon of dielectric material with CPE. The complex relative permittivity of samples is calculated by the measured S-parameter data. We simulated the double-layered type EM wave absorber with broad bandwidth using the measured complex relative permittivity by changing the thickness and layer, which was fabricated based on the simulated design. The fabricated EM wave absorber consist of 1mm first layer sheet facing metal with Carbon composition ratio 70 vol% and 1.5 mm second layer sheet with Carbon composition ratio 60 vol%. The comparisons of simulated and measured results are good agreement. As a result, the optimized absorption ability of double-layered type EM wave absorber with thickness of 2.5 mm is higher than 10 dB from 7.8 GHz to 13.3 GHz.

• Proceedings of the KSRS Conference
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• 2002.10a
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• pp.593-597
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• 2002

The paper introduces a research on the W-band Millimeter Wave Radiometer(RADW92) through an airborne experiment. Microwave remote sensing images of part of the Yellow River and the WeiHe River are of fared. Analysis of factors influencing the image qualities as well as the resolutions to them are also included. The RADW92 is the first generation of Millimeter Wave Radiometer in China, which works with operating frequency 92 GHz, the bandwidth 2 GHz, the integration time 60ms, the system sensitivity 0.6k and the linearity better than 0.999. Cassegrain Antenna is designed for imaging by conically scanning. The result of the experiment suggested that RADW92 had been adequate for space use.

• Progress in Superconductivity and Cryogenics
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• v.23 no.4
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• pp.56-60
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• 2021

The microwave Radar used for special purposes in the past is being applied in various areas due to the technological advancement and cost reduction, and is particularly applied to autonomous driving in the automobile field. The FMCW (Frequency Modulated Continuous Wave) Radar can acquire level information of liquid in vessel based on the beat frequency obtained by continuously transmitting and receiving signals by modulating the frequency over time. However, for cryogenic fluids with small impedance differences between liquid medium and gas medium, such as liquid nitrogen and liquid hydrogen, it is difficult to apply a typical Radar-based level meter. In this study, we develop an 80 GHz FMCW Radar for level measurement of cryogenic fluids with small impedance differences between media and analyze its characteristics. Here, because of the low intrinsic impedance difference, most of the transmitted signal passes through the liquid nitrogen interface and is reflected at the bottom of the vessel. To solve this problem, a radar measurement algorithm was designed to detect multiple targets and separate the distance signal to the bottom of the vessel in order to estimate the precise position on the liquid nitrogen interface. Thereafter, performance verification experiments were performed according to the liquid nitrogen level using the developed radar level meter.

• Journal of electromagnetic engineering and science
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• v.19 no.2
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• pp.115-121
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• 2019

This paper presents the effects of the position of the split of a split-ring resonator (SRR) on the performance of a composite broadband printed dipole antenna. The antenna is made of two printed dipole arms enclosed by two rectangular and identically printed SRRs. One dipole arm and the SRR are printed on the top side of the substrate, while the other dipole arm and SRR are printed on the bottom side of the same substrate. By changing the position of the split on the SRR, different antenna characteristic values are obtained, namely, for impedance bandwidth and radiation patterns. The split position is thus a critical parameter in antenna design, because it influences the antenna's major performance immensely. Different split positions and their consequences for antenna performance are demonstrated and discussed. The antenna generates linearly polarized radiations, and it is computationally characterized for broadband characteristics. The optimized compact antenna has overall dimensions of 9.6 mm × 74.4 mm × 0.508 mm (0.06λ × 0.469λ × 0.0032λ at 1.895 GHz) with a measured fractional bandwidth of 60.31% (1.32 to 2.46 GHz for |S₁₁| <-10 dB) and a radiation efficiency of >88%.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.5
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• pp.2241-2248
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• 2011

This paper describes the design of a palette-type 60watt high power amplifier module using gallium nitride(GaN) devices with high power and efficiency performances for WiMAX and LTE systems. The line-up for the high gain amplifier module consists of the pre-amplifier stage with low power and high gain, 8watt GaN driving amplifier stage, and 60watt GaN high power amplifier stage of Doherty structure with two 30watt GaN devices. The obtained gain is 61.4dB with an excellent gain flatness of ${\pm}$0.075dB over 2.5~2.68GHz. GaN devices and the Doherty structure are adopted for the improvement of high efficiency and output power. The measurement for the fabricated high power amplifier module of palette type is performed using the widely known WiMAX signal all over the world. In the example of RRH(remote radio head) application of the fabricated amplifier module, the measured efficiency is 37~38% with the 10watts of modulated output power. It is shown that when the fabricated amplifier module is activated with a digital predistorter(DPD), the measured ACLR is better than 46dBc under the 10watts of modulated output power.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.8
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• pp.117-124
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• 2009

This paper describes a 3 to 5 GHz frequency synthesizer for MB-OFDM (Multi-Band OFDM) UWB (Ultra- Wideband) application using 0.13 ${\mu}m$ CMOS process. The frequency synthesizer operates in the band group 1 whose center frequencies are 3432 MHz 3960 MHz, and 4488 MHz. To cover the overall frequencies of group 1, an efficient frequency planning minimizing a number of blocks and the power consumption are proposed. And, a high-frequency VCO and LO Mixer architecture are also presented in this paper. A new mixed coarse tuning scheme that utilizes the MIM capacitance, the varactor arrays, and the DAC is proposed to expand the VCO tuning range. The frequency synthesizer can also provide the clock for the ADC in baseband modem. So, the PLL for the ADC in the baseband modem can be removed with this frequency synthesizer. The single PLL and two SSB-mixers consume 60 mW from a 1.2 sV supply. The VCO tuning range is 1.2 GHz. The simulated phase noise of the VCO is -112 dBc/Hz at 1 MHz offset. The die area is 2 ${\times}$ 2mm$^2$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.1
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• pp.1-10
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• 2013

In this paper, a broadband planar monopole antenna for multi-band services is proposed. The physical size of the proposed antenna is miniaturized by folding a rectangular loop. And a resonance point in the 3.9 GHz band is reduced by a coupling phenomenon with the central part of the T-shaped patch and the folded rectangular loop. In addition, the T-shaped patch is inserted to the rectangular shaped monopole antenna due to deriving the broadband frequency characteristics. The frequency characteristic is optimized by adjusting the gap and length of the folded rectangular loops and a transverse diameter of the T-shaped patch. The antenna dimensions including the ground plane are $40{\times}60{\times}1.6mm^3$. It is fabricated on the FR-4 substrate(${\epsilon}_r$=4.4) using a microstrip line of $50{\Omega}$ for impedance matching. In the measured result, the bandwidth corresponding to the VSWR of 2:1 is 162 MHz(815~977 MHz) and 2,530 MHz(1.43~3.96 GHz). For analyzing the human effect by the proposed antenna, 1 g and 10 g averaged SARs are simulated and measured. As the simulated results, 1 g-averaged SAR is 1.044 W/kg, and 10 g-averaged SAR is 0.718 W/kg. This result are satisfied by the SAR guidelines which are 1.6 W/kg(1 g-averaged) and 2.0 W/kg(10 g-averaged).

• Korean Journal of Materials Research
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• v.18 no.4
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• pp.169-174
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• 2008

The structural and electrical properties of amorphous $BaSm_2Ti_4O_{12}$ (BSmT) films on a $TiN/SiO_2/Si$ substrate deposited using a RF magnetron sputtering method were investigated. The deposition of BSmT films was carried out at $300^{\circ}C$ in a mixed oxygen and argon ($O_2$ : Ar = 1 : 4) atmosphere with a total pressure of 8.0 mTorr. In particular, a 45 nm-thick amorphous BSmT film exhibited a high capacitance density and low dissipation factor of $7.60\;fF/{\mu}m2$ and 1.3%, respectively, with a dielectric constant of 38 at 100 kHz. Its capacitance showed very little change, even in GHz ranges from 1.0 GHz to 6.0 GHz. The quality factor of the BSmT film was as high as 67 at 6 GHz. The leakage current density of the BSmT film was also very low, at approximately $5.11\;nA/cm^2$ at 2 V; its conduction mechanism was explained by the the Poole-Frenkel emission. The quadratic voltage coefficient of capacitance of the BSmT film was approximately $698\;ppm/V^2$, which is higher than the required value (<$100\;ppm/V^2$) for RF application. This could be reduced by improving the process condition. The temperature coefficient of capacitance of the film was low at nearly $296\;ppm/^{\circ}C$ at 100 kHz. Therefore, amorphous BSmT grown on a TiN substrate is a viable candidate material for a metal-insulator-metal capacitor.