• The Bulletin of The Korean Astronomical Society
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• v.35 no.1
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• pp.42.2-42.2
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• 2010

2009년부터 2010년에 걸쳐 22 및 43GHz 대역에서의 KVN 단일경 시험관측이 이루어졌다. KVN 관측소는 연세대학교, 울산대학교, 탐라대학교에 위치하고 있으며, 시험관측의 주된 내용은 안테나 지향모델 구축, 22/43 GHz 빔 정렬, 이득곡선 측정 및 안테나 효율측정 등이다. 구축된 지향오차의 정밀도는 세 곳의 관측소 모두 rms가 5초 이내였으며, 두 빔도 5초 이내로 정렬되어 있음이 확인되었다. 안테나 효율은 22 및 43GHz에서 모두 60%를 넘는 값을 얻을 수 있었다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.570-572
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• 2012

In this paper, a three-dimensional (3-D) low-loss and wide-band BPF based on low-temperature co-fired ceramic (LTCC) has been presented for mm-wave wireless communication applications. The proposed BPF is designed in a 6-layer LTCC substrate. The double patch resonators are fully integrated into the LTCC dielectrics and vertical via and planar CPW transitions are designed for interconnection between embedded resonators and in/output ports and MMICs, respectively. The designed BPF was fabricated in a 6-layer LTCC dielectric. The fabricated BPF shows a centre frequency (fc) of 53.23 GHz and a 3dB bandwidth of 14.01 % from 49.5 to 56.9 GHz (7.46 GHz). An insertion loss of -1.56 dB at fc and return losses below -10 dB are achieved. Its whole size is $4.7{\times}1.7{\times}0.684mm^3$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.131-137
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• 2014

A 120 GHz voltage controlled oscillator (VCO) with a divider chain including an injection locked frequency divider (ILFD) and six static frequency dividers is demonstrated using 65-nm CMOS technology. The VCO is designed based on the LC cross-coupled push-push structure and operates around 120 GHz. The 60 GHz ILFD at the first stage of the frequency divider chain is based on a similar topology as the core of the VCO to ensure the frequency alignment between the two circuit blocks. The static divider chain is composed of D-flip flops, providing a 64 division ratio. The entire circuit consumes a DC power of 68.5 mW with the chip size of $1385{\times}835{\mu}m^2$.

• Journal of IKEEE
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• v.16 no.2
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• pp.116-120
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• 2012

We reported on a high performance InGaAs/InAlAs metamorphic HEMT with 50 nm gate length on a GaAs substrate. The fabricated $50nm{\times}60{\mu}m$ MHEMT showed good DC and RF characteristics. Typical drain current density of 740 mA/mm and extrinsic transconductance(gm) of 1.02 S/mm were obtained with our devices. The current gain cut-off frequency(fT) and maximum oscillation frequency(fmax) obtained for the fabricated MHEMT device were 430 GHz and 406 GHz, respectively.

• Bulletin of the Korean Space Science Society
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• 2000.04a
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• pp.56-56
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• 2000

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 1996.06a
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• pp.204-207
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• 1996

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.9 no.4
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• pp.32-47
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• 1998

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.4
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• pp.60-72
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• 2001

• TTA Journal
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• s.130
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• pp.87-92
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• 2010

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.5
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• pp.516-521
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• 2011

In this paper, an inverted-triangle patch UWB antenna with an uneven ground planes and an inverted T-slot for 5 GHz WLAN band rejection is presented. The operating bandwidth of the proposed antenna fed with the CPW line is expanded from 3.1 GHz to 10.6 GHz for about -10 dB return loss using three angular parameters correlated to the main patch and the ground plane. The fabricated antenna on Taconic RF-60A substrate with 6.16 relative dielectric constant and 0.64 mm thickness has a main antenna patch size of 36 mm${\times}$19.5 mm. The measured results show return losses of about -10 dB and nearly omni-directional radiation patterns. The proposed UWB antenna has advantages of easily adjustable impedance characteristics by the three angular parameters and easily accomplishable band rejection characteristics by the inverted T-slot.