• The Journal of the Korea Contents Association
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• v.6 no.4
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• pp.1-10
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• 2006

In this paper, a broadband RF module is designed and tested for 2.4GHz band applications. The RF module is composed of a low noise amplifier (LNA) with a three stage amplifier, a single ended gate mixer, matching circuits, a hairpin line band pass filter and a Chebyshev low pass filter to convert the radio frequency (RF) into the intermediate frequency (IF). The LNA has a high gain and stability, and the single ended gate mixer has a high conversion gain and wide dynamic range. In the analysis of the broadband RF module, the composite harmonic balance technique is used to analyze the operating characteristics of an RF module circuit. The RF module has a 55.2dB conversion gain with a 1.54dB low noise figure, $-120{\sim}-60dBm$ wide RF power dynamic range, -60dBm low harmonic spectrum and a good isolation factor among the RF, IF, and local oscillator (LO) ports.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.7 s.110
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• pp.659-664
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• 2006

This paper reports a high power 60 GHz push-push oscillator fabricated using $0.12{\mu}m$ metamorphic high electron-mobility transistors(mHEMTs). The devices with a $0.12{\mu}m$ gate-length exhibited good DC and RF characteristics such as a maximum drain current of 700 mA/mm, a peak gm of 660 mS/mm, an $f_T$ of 170 GHz, and an $f_{MAX}$ of more than 300 GHz. By combining two sub-oscillators having $6{\times}50{\mu}m$ periphery mHEMT, the push-push oscillator achieved a 6.3 dBm of output power at 59.5 GHz with more than - 35 dBc fundamental suppression. The phase noise of - 81.5 dBc/Hz at 1 MHz offset was measured. This is one of the highest output power obtained using mHEMT technology without buffer amplifier, and demonstrates the potential of mHEMT technology for cost effective millimeter-wave commercial applications.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.495-498
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• 2006

This paper reports a high power 60 GHz push-push oscillator fabricated using 0.12 um metamorphic high electron-mobility transistors (mHEMTs). The devices with a $0.1{\mu}m$ gate-length exhibited good DC and RF characteristics such as a maximum drain current of 700 mA/mm, a peak gm of 660 mS/mm, and an $f_T$ of 170 GHz. By combining two sub-oscillators having $6{\times}50{\mu}m$ periphery mHEMT, the push-push oscillator achieved a 6.3 dBm of output power at 59.5 GHz with more than -35 dBc fundamental suppression. This is one of the highest output power obtained using mHEMT technology without buffer amplifier, and demonstrates the potential of mHEMT technology for cost effective millimeter-wave commercial applications.

• Journal of Navigation and Port Research
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• v.27 no.1
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• pp.81-86
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• 2003

In the paper, the power amplifier using active biasing for LDMOS MRF-21060 is designed and fabricated. Driving amplifier using AH1 and parallel power amplifier AH11 is made to drive the LDMOS MRF 21060 power amplifier. The variation of current consumption in the fabricated 5 Watt power amplifier has an excellent characteristics of less than 0.1A, whereas passive biasing circuit dissipate more than 0.5A. The implemented power amplifier has the gain over 12 dB, the gain flatness of less than $\pm$0.09dB and input and output return loss of less than -19dB over the frequency range 2.11~2.17GHz. The DC operation point of this power amplifier at temperature variation from $0^{\circ}C$ to $60^{\circ}C$ is fixed by active circuit.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.4
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• pp.229-237
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• 2011

In this paper, a 60 GHz LTCC SiP with low-power CMOS OOK modulator and demodulator is presented. The 60 GHz modulator is designed in a 90-nm CMOS process. The modulator uses a current reuse technique and only consumes 14.4-mW of DC power in the on-state. The measured data rate is up to 2 Gb/s. The 60 GHz OOK demodulator is designed in a 130nm CMOS process. The demodulator consists of a gain boosting detector and a baseband amplifier, and it recovers up to 5 Gb/s while consuming low DC power of 14.7 mW. The fabricated 60 GHz modulator and demodulator are fully integrated in an LTCC SiP with 1 by 2 patch antenna. With the LTCC SiP, 648 Mb/s wireless video transmission was successfully demonstrated at wireless distance of 20-cm.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.5
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• pp.426-429
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• 2017

For the W-band remote sensing radiometer, direct detection type radiometer receiver is designed. The receiver should be low noise and high gain of 60 dB unlike communication and radar receiver. The W-band radiometer consist of 4-stage low noise, high gain amplifier, band pass filter and square law detector. The developed direct detection receiver show 4 GHz bandwidth, 56 dB gain, and 4,500 mV/mW voltage sensitivity at integrator output port for -20 dBm input power at 94 GHz.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.40 no.11
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• pp.34-41
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• 2003

In this paper, 60GHz band transmitter and receiver for wireless LAN are designed and implemented using the broband amplifier and mixer fabricated by standard 0.1${\mu}{\textrm}{m}$ MIMIC process of MINT. Output power and gain of the RF transmitter are 0 ㏈m and 1.7㏈, respectively. Noise figure and gain of the receiver are 4.2㏈ and l5.7dB, respectively. Considering the sensitivity and LOS test, this system can communicate with BER of below than 10$^{-6}$ at a distance more than 35m. DSSS, which is strong for concealment and disturbance, is adopted.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.17 no.4
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• pp.77-82
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• 2017

As frequencies increase to the millimeter wave bands the cross sections of wave guides become smaller than a few millimeters, which cause sapatial problems in realization of spatial combining power amplifiers. In this paper we intented to overcome the problem by widening the width of wave guides using horn antenna principles. We designed a widened rectangular wave guide for using in spatial combining power amplifier in 60GHz ISM band(57-64GHz), and we installed Antipodal transition in the widened wave guide, and then we characterized it as a spatial combining power amplifier. For the compatibility of WR15 standard wave guide, we widened the width of WR15 to 7mm using principle of H-plane sectoral horn antenna and then installed 3 slots of back to back Antipodal transition. The designed spatial combining power amplifier showed good characteristics of return loss less than -22.4dB and insertion loss less than 0.53dB. However, as widening the width of the wave guide, additional modes such as $TE_{20}$, $TE_{30}$ in addition to $TE_{10}$ were accurred in the bandwidth of WR15, which restricted the bandwidth and widening of the width of the wave guide.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.6
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• pp.670-680
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• 2010

A low power single-chip CMOS receiver for 60 GHz mobile application are proposed in this paper. The single-chip receiver consists of a 4-stage current re-use LNA with under 4 dB NF, Cgs compensating resistive mixer with -9.4 dB conversion gain, Ka-band low phase noise VCO with -113 dBc/Hz phase noise at 1 MHz offset from 26.89 GHz, high-suppression frequency doubler with -0.45 dB conversion gain, and 2-stage current re-use drive amplifier. The size of the fabricated receiver using a standard 0.13 ${\mu}m$ CMOS technology is 2.67 mm$\times$0.75 mm including probing pads. An RF bandwidth is 6.2 GHz, from 55 to 61.2 GHz and an LO tuning range is 7.14 GHz, from 48.45 GHz to 55.59 GHz. The If bandwidth is 5.25 GHz(4.75~10 GHz) The conversion gain and input P1 dB are -9.5 dB and -12.5 dBm, respectively, at RF frequency of 59 GHz. The proposed single-chip receiver describes very good noise performances and linearity with very low DC power consumption of only 21.9 mW.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.24 no.7A
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• pp.947-954
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• 1999

A new low phase noise Dielectric Resonator Parallel Feedback Oscillator(DRPFO) that is proposed in this paper has a simple structure so that it can be fabricated in low cost and with high performance. The proposed DRPFO is in a feedback loop oscillator configuration, which is composed of a low noise amplifier, a power amplifier, a power attenuator, a power divider and a parallel resonator feedback element that consists of a dielectric resonator coupled with two microstrip lines. The measured phase noise of DRPFO was less than -81 dBc/Hz at offset frequency 1 kHz of 10.75 GHz carrier frequency, and the frequency stability of DRPFO was less than $\pm$200 kHz over the temperature range of -40$^{\circ}$C to +60$^{\circ}$C.