• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.4
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• pp.397-403
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• 2008

In this paper, the mixer was implemented in the non-radiative dielectric waveguide that is the main component of 60 GHz band radio telecommunications equipment which a demand increases for the purpose of point-to-point communication network. As to the manufacture of the non-radiative dielectric waveguide mixer, it was the implementation of the dielectric line combiner to be most difficult. The thing which that gives shape to the curvature which is the dielectric line determined and the to place in the exact interval thing are easy. For this reason, it was very difficult to make in order to have the regular performance in the case of the mixer having the dielectric line combiner. In this paper, since the dielectric line combiner was replaced with the waveguide directional coupler and the manufacture was possible through a processing it had the characteristic that a combiner is fixed. In result, the productivity of a mixer was innovatively improved. The design frequency of the mixer implemented through this paper RF and LO are $51{\sim}64\;GHz$. IF Is $DC{\sim}\;GHz2$. The down conversion loss toward the RF input of $60{\sim}62\;GHz$ was measured by $10{\pm}1\;dB$ in the condition that LO is 10 dBm, 60 GHz.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.4
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• pp.256-261
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• 2011

We demonstrate 3-Gb/s wireless link using a 60-GHz receiver front-end fabricated in $0.25-{\mu}m$ SiGe:C bipolar complementary metal oxide semiconductor (BiCMOS) and a mixed-mode quadrature phase-shift keying (QPSK) demodulator fabricated in 60-nm CMOS. The 60-GHz receiver consists of a low-noise amplifier and a down-conversion mixer. It has the peak conversion gain of 16 dB at 62 GHz and the 3-dB intermediate-frequency bandwidth of 6 GHz. The demodulator using 1-bit sampling scheme can demodulate up to 4.8-Gb/s QPSK signals. We achieve successful transmission of 3-Gb/s data in 60 GHz through 2-m wireless link.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.12
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• pp.103-108
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• 2004

In this paper, we present MIMIC(Millimeter-wave Monolithic Integrated Circuit) up-mixer with low conversion loss and low LO power for the V-band transmitter applications. The up-mixer was successfully integrated by using 0.1 ㎛ GaAs pseudomorphic HEMTs(PHEMTs) and coplanar waveguide (CPW) structures. The circuit is designed to operate at RF frequencies of 60.4 GHz, IF frequencies of 2.4 GHz, and LO frequencies of 58 GHz. The fabricated MIMIC up-mixer size is 2.3 mmxl.6 mm. The measured results show that the low conversion loss of 1.25 dB when input signal is -10.25 dBm at LO power of 5.4 dBm. The LO to RF isolation is 13.2 dB at 58 GHz. The fabricated V-band up-mixer represents lower LO input power and conversion loss characteristics than previous reported millimeter-wave up-mixers.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.1
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• pp.29-36
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• 2009

In this paper, the design and implementation of LNA and down-mixer using 90 nm CMOS process are presented for 60 GHz band WPAN receiver. In order to extract characteristics of the transistor used to design each elements under the optimum bias conditions, the S-parameter of the manufactured cascode topology was measured and the effect of the RF pad was removed. Measured results of 3-stages cascode type LNA the gain of 25 dB and noise figure of 7 dB. Balanced type down-mixer with a balun at LO input port shows the conversion gain of 12.5 dB within IF frequency($8.5{\sim}11.5\;GHz$) and input PldB of -7 dBm. The size and power consumption of LNA and down-mixer are $0.8{\times}0.6\;mm^2$, 43 mW and $0.85{\times}0.85\;mm^2$, 1.2 mW, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.6
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• pp.608-618
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• 2004

In this paper, modifying the diode star double balanced mixer of Maas, a novel resistive 60 GHz pHEMT MMIC star mixer is suggested. Due to star configuration, troublesome IF balun for ring configuration FET mixer is not necessary. In addition, the sysematic design method of dual balun through EM simulation is suggested rather than the design by inspection as Maas. The mixer circuit is fabricated as MMIC on CPW base using 0.1 um GaAs pHEMT Library of MINT in Dongguk University. The size is 1.5 ${\times}$ 1.5 $\textrm{mm}^2$ and its performance is adjustable by DC supply. It can be operated as both up and down converters and it shows the conversion loss of about 13∼18 ㏈ over the full V-band frequencies.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.5 no.2 s.10
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• pp.55-60
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• 2006

In this paper, a broadband double balanced mixer is presented using a wideband Marchand balun implementation by vertical coupler. Frequency is selected as $1.0{\sim}3.7GHz$ for RF, $1.14{\sim}3.84GHz$ for LO, and 140 MHz for IF signals. When LO signal with 7 dBm at 2.64 GHz is injected, a conversion loss of 7.5 dB and RF to LO isolation of -45 dB are obtained. Also, an average conversion loss of 9 dB and RF to LO isolation of -25 dB are obtained for frequency band of $1.0{\sim}3.7GHz$.

• The Journal of the Korea Contents Association
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• v.6 no.4
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• pp.1-10
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• 2006

In this paper, a broadband RF module is designed and tested for 2.4GHz band applications. The RF module is composed of a low noise amplifier (LNA) with a three stage amplifier, a single ended gate mixer, matching circuits, a hairpin line band pass filter and a Chebyshev low pass filter to convert the radio frequency (RF) into the intermediate frequency (IF). The LNA has a high gain and stability, and the single ended gate mixer has a high conversion gain and wide dynamic range. In the analysis of the broadband RF module, the composite harmonic balance technique is used to analyze the operating characteristics of an RF module circuit. The RF module has a 55.2dB conversion gain with a 1.54dB low noise figure, $-120{\sim}-60dBm$ wide RF power dynamic range, -60dBm low harmonic spectrum and a good isolation factor among the RF, IF, and local oscillator (LO) ports.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.6
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• pp.670-680
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• 2010

A low power single-chip CMOS receiver for 60 GHz mobile application are proposed in this paper. The single-chip receiver consists of a 4-stage current re-use LNA with under 4 dB NF, Cgs compensating resistive mixer with -9.4 dB conversion gain, Ka-band low phase noise VCO with -113 dBc/Hz phase noise at 1 MHz offset from 26.89 GHz, high-suppression frequency doubler with -0.45 dB conversion gain, and 2-stage current re-use drive amplifier. The size of the fabricated receiver using a standard 0.13 ${\mu}m$ CMOS technology is 2.67 mm$\times$0.75 mm including probing pads. An RF bandwidth is 6.2 GHz, from 55 to 61.2 GHz and an LO tuning range is 7.14 GHz, from 48.45 GHz to 55.59 GHz. The If bandwidth is 5.25 GHz(4.75~10 GHz) The conversion gain and input P1 dB are -9.5 dB and -12.5 dBm, respectively, at RF frequency of 59 GHz. The proposed single-chip receiver describes very good noise performances and linearity with very low DC power consumption of only 21.9 mW.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.11
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• pp.1318-1323
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• 2010

A lot of demand for parts of millimeter wave band, as would be expected 57~63 GHz band down conversion mixer was designed and fabricated using IHP 0.25 um SiGe process. Designed and fabricated mixer was double balanced type and located reduced 3D balun at RF port and buffer amplifier at outport for suppression LO signal and conversion gain. Fabricated mixer measured conversion gain of 13.8 dB, $P1dB_{in}$ -17 dBm and 88 mA of current consumption characteristics, respectively.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2001.11a
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• pp.222-226
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• 2001

In this paper, 2.4GHz RF Module using Even Harmonic Mixer(EHM) was designed and fabricated for Direct conversion(DC) system. By minimizing performance degradation of DC system with DC offset and LO radiation, the capability of minimization and one chip solution in wireless system was proposed. The designed EHM using anti-parallel diode pair represented 9dB conversion loss and about -60dBm 2LO leakage radiation in RF port, and output reflection and reverse transmission characteristic of low noise amplifier was improved. So superior DC offset suppression characteristic is expected. RF Module which consists of EHM, LNA, RF amplifier, Frequency synthesizer and Duplexer was designed and fabricated.