• Korean Journal of Materials Research
• /
• v.10 no.1
• /
• pp.62-68
• /
• 2000

Ultra thin TiN films (50∼700nm thickness) were deposited on AISI 304 stainless steel substrates using a reactive DC magnetron sputtering deposition process to investigate their wear and friction properties. Dry sliding wear tests of the films were carried out against hardened steel and alumina counterparts using a pin-on-disk type wear tester at room temperature. Variation of friction coefficient was measured as a function of film thickness, load, sliding speed and roughness of the substrate. Worn surfaces of the film were examined by a scanning electron microscope. Wear resistance of the TiN film increased with the increase of the film thickness. The TiN film showed relatively high wear resistance in spite of its ultra thin thickness when it is mated by the steel counterpart, while it showed poor wear resistance with the alumina counterpart. The good wear resistance with the steel counterpart was explained by the formation of oxide layers on the film surface and sound interface character between the ultra thin film and the substrate.

• Journal of the Microelectronics and Packaging Society
• /
• v.14 no.4
• /
• pp.37-42
• /
• 2007

We fabricated the polymer light emitting diodes (PLEDs) with ITO/PEDOT:PSS/PVK/PFO:MEH-PPV/LiF/Al structures. The effect of the thickness of PEDOT:PSS hole injection layer(HIL) on the electrical and optical properties of PLEDs was investigated. In addition, PVK hole transport layer(HTL) was introduced in the PLED device, and compared the properties of the PLEDS with and without PVX layer. All organic film layers were prepared by the spin coating method on the plasma treated ITO/glass substrates. As the thickness of PEDOT:PSS film layer decreased from about 80 nm to 50 nm, the luminance of PLED device increased from $220cd/m^2$에서 $450cd/m^2$. This may be ascribed to the increased transportation efficiency of the holes into the emission layer of PLED. The maximum current density and luminance were obtained fir the PLED device with PVX hole transport layer, showing that the current density and luminance were $268mA/cm^2\;and\;540cd/m^2$ at 12V, respectively. This values were improved by about 14% and 22% in current density and luminance compared with the PLED device without PVK layer.

• Journal of the Korean Electrochemical Society
• /
• v.15 no.3
• /
• pp.181-189
• /
• 2012

We developed a new high-yield synthesis method of free-standing germanium nanocrystals (Ge NCs) by means of the gas-phase photolysis of tetramethyl germanium in a closed reactor using an Nd-YAG pulsed laser. Size control (5-100 nm) can be simply achieved using a quenching gas. The $Ge_{1-x}Si_x$ NCs were synthesized by the photolysis of a tetramethyl silicon gas mixture and their composition was controlled by the partial pressure of precursors. The as-grown NCs are sheathed with thin (1-2 nm) carbon layers, and well dispersed to form a stable colloidal solution. Both Ge NC and Ge-RGO hybrids exhibit excellent cycling performance and high capacity of the lithium ion battery (800 and 1100 mAh/g after 50 cycles, respectively) as promising anode materials for the development of high-performance lithium batteries. This novel synthesis method of Ge NCs is expected to contribute to expand their applications in high-performance energy conversion systems.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.20 no.6
• /
• pp.254-261
• /
• 2010

Polycrystalline silicon (pc-Si) films are fabricated and characterized for application to pc-Si thin film solar cells as a seed layer. The amorphous silicon films are crystallized by the aluminum-induced layer exchange (ALILE) process with a structure of glass/Al/$Al_2O_3$/a-Si using various thicknesses of $Al_2O_3$ layers. In order to investigate the effects of the oxide layer on the crystallization of the amorphous silicon films, such as the crystalline film detects and the crystal grain size, the $Al_2O_3$ layer thickness arc varied from native oxide to 50 nm. As the results, the defects of the poly crystalline films are increased with the increase of $Al_2O_3$ layer thickness, whereas the grain size and crystallinity are decreased. In this experiments, obtained the average pc-Si sub-grain size was about $10\;{\mu}m$ at relatively thin $Al_2O_3$ layer thickness (${\leq}$ 16 nm). The preferential orientation of pc-Si sub-grain was <111>.

• Korean Journal Plant Pathology
• /
• v.3 no.4
• /
• pp.291-298
• /
• 1987

Samples showing mosaic symptom of cowpea (Vigna sesquipedalis) with vein banding, chlorotic spot, vein yellow were collected from Chinju areas in Korea, Two viruses were distinguishable by stability in sap, host range, and relations with cells and tissues were examined under an electron microscope, Blackeye cowpea mosaic(BICMV) was sap-transmissible to 7 plant species in 2 families, Of the plants, only leguminous species were systemically infected. This virus was inactivated by heating at $50-65^{\circ}C$ for 10 min, by diluting at $10^{-4}-10^{-5}$, and aging at room temperature for 1-6 days. Preparations examined under the electron microscope by direct negative staining method(DN -method) always showed particles of flexuous filament bout 750nm in length and cytopasmic inclusions. Cytoplasmic inclusions and virus particles were also confirmed to present in the cytoplasm of a mesophyll cell by ultrathin sections of BICMV infected cowpea leaves. Cucumber mosaic virus (CMV) was transmitted by sap- inoculation on inoculated leaves of Chenopodium amaranticolor, C. quinoa producing local lesions, but non-inoculated upper leaves of Nicotiana glutinosa, Cucurbita pepo and Vigna sesquipedalis producting systemic mosaic symptoms. Electron microscopic examination of virus preparation by direct negative staining showed spherical particles of about 30nm in diameter. In ultrathin sections of CMV infected tissues, virus particles of crystalline array were found in the vacuole and a large number of virus particles were found in the cytoplasm and the plasmodesmata of mesophyll cells.

• Journal of the Korean Society of Fisheries and Ocean Technology
• /
• v.40 no.1
• /
• pp.23-28
• /
• 2004

The transmittance properties of fishing lamp in stick-held dip net fishing vessel for Pacific saury was investigated during nighttime operations in the North Pacific on May 19 and 24, 2003. The incandescent lamps of red color (750W${\times}$100) and halogen lamps (750W${\times}$521) were used as a fishing lamp for gathering Pacific saury. The relative irradiance of red incandescent lamp and halogen lamp in the air showed peak in 1,052nm of wave length. However, the irradiance of halogen lamp below 600nm of wave length was higher than that of incandescent lamp. The relationship between underwater illuminance (Y) and water depth (X) of sunlight in the observation areas A (37$^{\circ}$ 11'N, 178$^{\circ}$ 46'W) and B (31$^{\circ}$ 11'N, 178$^{\circ}$ 01'E) is represented as follows; $Y=2572.2{\cdot}e^{-0.0721X},\;R^2=0.9915$ $Y=3312.4{\cdot}e^{-0.0619X},\;R^2=0.9837$ The distribution of underwater illuminance of observation areas A and B showed low value of 0.31x and 0.61x in 50m depth, respectively. In the fishing grounds of Pacific saury, the light intensity of distribution depth was above 0.51x.

• Journal of fish pathology
• /
• v.11 no.2
• /
• pp.129-136
• /
• 1998

In March 1997, a new rhabdovirus was isolated from moribund cultured Japanese flounder Paralichthys olivaceus in sea water tank and cage culture systems in Kyung-Nam and Chun-Nam province, Korea. At temperature $15^{\circ}C$ the virus replicated and induced cytopathic effects (CPE), which progressed to eventual cytolysis, in susceptible cell lines, including RTG-2 and EPC. The CHES-214 cell line was refractory. Virus particles were bullet-shaped and measured $70nm{\times}100$ to 150 nm in size. The isolate was sensitive to pH 3, to diethyl ether, and to heat ($50^{\circ}C$ 5 min, $60^{\circ}C$ 1 min). Viral replication was not inhibited by $10^{-4}$ M 5-iododeoxyuridine. Virus infectivity was reduced by anti-HRV (8401-H) rabbit serum, but can not reduced by antisera against infectious hematopoietic necrosis virus (IHNV), chum salmon reovirus (CSV), retrovirus of salmonid (RVS) and infectious pancreatic necrosis virus (IPNV). HRV virus antigen was detected by fluorescent antibody test (FAT) in the cytoplasm of infected EPC cell. Purified isolates virions were composed of: polymerase (L), glycoprotein (G), nucleoprotein (N) and 2 matrix proteins (M1 and M2). Based upon their relative mobilities, the estimated molecular weights of the proteins were: L, 160 kDa; G, 55 kDa; N, 45 kDa; M1, 26 kDa; and M2, 22 kDa.

• The Journal of the Korea Contents Association
• /
• v.13 no.2
• /
• pp.314-321
• /
• 2013

Photodynamic therapy(PDT) has been recommended as an alternative therapy for various diseases including microbial infection. The aim of the present study is to evaluate the antimicrobial effect of PDT using a photofrin and home made 630 nm Light emitting diode(LED) against Staphylococci. To examine the antimicrobial effect of photofrin-mediated PDT against Staphylococcus aureus and Staphylococcus epidermidis colony forming units(CFU) quantification, and bacterial viability using flow cytometry were formed. The CFU quantification results of S. aureus and S. epidermidis were 1 cfu/ml and 16 cfu/ml of average, respectively, after PDT application with photofrin of $50{\mu}g/m{\ell}$ and 630 nm LED and energy density of $18J/cm^2$. In addition, S. aureus and S. epidermidis isolates yielded forward-scatter (FSC) and fluorescence intensity (FI) differences on flow cytometry (FCM) after PDT. S. aureus and S. epidermidis cell size(FSC) increased 8.96% and 5.55% respectively, after PDT. Also the numbers of dead cell of S. aureus and S. epidermidis were a 39% and 61% incerased. These results suggest that photofrin-mediated PDT can be an effective alternative treatment for antibacterial therapy.

• Journal of the Korean Vacuum Society
• /
• v.19 no.1
• /
• pp.10-13
• /
• 2010

We studied the effect of $O_2$ plasma treatments on the electrical property of Ti / Al ohmic contacts to N-face n-type GaN. The surface of N-face, n-type GaN has been treated with $O_2$ plasma for 120 s before the deposition of bilayered electrodes, Ti (50 nm) / Al (35 nm), and its contact resistance was compared with that of the reference sample without $O_2$ plasma. As a result, we found that the ohmic contact was reduced from $4.3\;{\times}\;10^{-1}\;{\Omega}cm^2$ to $1.25\;{\times}\;10^{-3}\;{\Omega}cm^2$ by applying $O_2$ plasma on the surface of n-type GaN, which was attributed to the reduction in the Schottky barrier height (SBH), caused by nitrogen vacancies formed during the $O_2$ plasma process.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.311-311
• /
• 2014

III-N계 물질로 이루어진 GaN 기반의 광 반도체는 직접 천이형 넓은 밴드갭 구조를 갖고 있기 때문에 적외선부터 가시광선 및 자외선까지를 포함한 폭 넓은 발광파장 조절이 가능하여 조명 및 디스플레이 관련 차세대 광원으로 많은 관심을 받고 있다. 하지만, GaN기반의 발광 다이오드는 많은 연구기관들의 오랜 연구에도 불구하고 고출력을 내는데 있어 여전히 많은 문제들이 존재한다. 그 중, 주입전류 증가에 따른 효율감소 현상은 출력을 저해하는 대표적인 요소로 알려져 있는데, 이전의 연구 결과에서 알려진 효율감소 현상의 원인으로 결정결함에 의한 누설전류, Auger 재결합, 이송자 넘침 현상 그리고 p-n접합부의 온도 상승 등의 현상이 알려져 있다 [1-2]. 하지만 여전히 주입 전류 증가에 따른 효율 감소 현상의 원인에 대해 명확한 해답은 없으며 아직도 많은 논의가 이루어 지고 있다. 따라서, 본 연구에서는 GaN기반의 청색 및 녹색 LD와 LED소자를 이용하여 주입전류 밀도의 변화에 따른 자발 발광 영역에서의 효율감소 현상의 원인을 규명하고 한다. 유기금속화학증착법(MOCVD)를 이용하여 c면 사파이어 위에 서로 다른 발광파장을 가지는 InGaN/GaN 다중양자우물구조의 질화물계 LED와 LD 박막을 제작하였으며 성장 구조에 의한 특성으로 인해 발생하는 효율 저하 현상을 방지하고자 InGaN/GaN으로 이루어진 다중양자우물층의 조성만 제어하여 청색과 녹색으로 발광하도록 하였다. 청색 및 녹색 LD 웨이퍼들을 이용하여 주입전류 증가에 따른 발광특성을 조사하기 위해 LD와 LED는 표준 팹 공정에 의해 제작되었다. 전계 발광 측정을 위해 상온에서 직류 전류를 주입하여 GaN계 청색 및 녹색 LED와 LD에 각 5 mA/cm2에서 50 mA/cm2까지 전류밀도를 증가시킴에 따라 LD 및 LED칩 형태에 상관없이 청색 LD와 LED의 파장은 약 465nm에서 약 458nm로 감소하였고 녹색 LD와 LED의 파장은 약 521nm에서 약 511~513 nm까지 단파장화가 발생했다. 이는 동일한 웨이퍼에 동일한 전류 밀도를 주입하였기 때문에 발생하는 것으로 판단된다. 그러나, 청색 LED의 효율은 50 mA/cm2에서 약 70%정도로 감소하고 반면 녹색 LED의 경우 동일한 전류밀도 하에 약 52%정도로 감소하였지만, 청색과 녹색 LD의 경우 동일한 전류 밀도의 범위 내에서 더욱 낮은 효율저하 현상을 나타내었다. 또한, 접합 온도를 측정한 바 청색소자가 녹색 소자에 비하여 낮은 접합 온도를 나타낼 뿐아니라, 청색 및 녹색 LD의 경우 LED 보다 낮은 접합 온도를 나타내고 있었다. 이는 InGaN 활성층의 In 조성이 증가할수록 비발광 센터에 의한 접합온도 상승 뿐 아니라, LD ridge 구조에서 더 많은 열이 방출되어 접합 온도가 감소될 수 있는 것으로 판단된다. 우리는 동일한 웨이퍼에 LED와 LD를 제작하였고, 동일한 전류 주입밀도를 인가하였기 때문에 LD와 LED의 효율 감소 현상의 차이는 이송자 넘침 현상, 결정 결함, 오제 재결합 등이 원인보다 활성층의 접합 온도 상승이 가장 큰 영향이 될 수 있을 것으로 판단된다.