• Journal of IKEEE
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• v.27 no.4
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• pp.386-390
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• 2023

In this study, we examined the quasi-nonvolatile memory characteristics of silicon nanosheet (SiNS) feedback field-effect transistors (FBFETs) fabricated using a complementary metal-oxide-semiconductor process. The SiNS channel layers fabricated by photoresist overexposure method had a width of approximately 180 nm and a height of 70 nm. The SiNS FBFETs operated in a positive feedback loop mechanism and exhibited an extremely low subthreshold swing of 1.1 mV/dec and a high ON/OFF current ratio of 2.4×10⁷. Moreover, SiNS FBFETs represented long retention time of 50 seconds, indicating the quasi-nonvolatile memory characteristics.

• Korean Journal Plant Pathology
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• v.2 no.1
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• pp.1-11
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• 1986

Negatively stained dip preparations from Euonymus showing vein clear symptoms revealed bacilliform particles. The particles tentatively referred to as the Euonymus vein clear virus(EVCV) have a relatively complex structure, measuring 230-280nm in length and 70-80nm in diameter. They have an envelope, 8-10nm thick, provided with evenly spaced beadlike projection about 5-6nm long. The inner tubular core which had no envelope showed helical structures, 200-220nm long, and 50-55nm in diameter. This inner tubular core is interpreted as the virus nucleocapsid. A striking association of virus particles with the nuclei of infected cells was apparent from sections which showed numberous virus particles at the nuclear periphery and in what appeared to be intranuclear virus particle inclusions. Careful examination of these apparent inclusions revealed the presence of the nuclear envelope surrounding them, in addition to cytoplasmic organelles within them. Such profiles were interpreted as having arisen when the sections passed through invaginations of the cytoplasm into the nucleus. In all the sections showing virus particles associated with the nucleus, large number of virus particles were found to be present in expanded areas between the two lamellae of the nuclear envelope. This location is suggested as a possible site of virus assembly. Serveal micrographs of particles found in this location suggested incorporation of the inner lamella of the nuclear envelope into the viral envelope. Various micrographs indicated a possible helical arrangement of certain components present in the virus core.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.4
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• pp.726-732
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• 2007

We fabricated UV absorption functional $10{\sim}50nm-TiO_{2-x}/quartz$ structures layer using ALD (atomic layer deposition) method. We deposited $10nm-TiO_{2-x}$ layer on quartz substrate using ALD, and film thickness was determined by an ellipsometer. The others specimen thickness was controlled by ALD time lineally. We characterized controlling phase UV and visible optical property using an X-ray difractometer, a UV-VIS-IR spectrometer and a digital camera. $ALD-TiO_{2-x}$ layers were non-stoichiometric $TiO_{2-x}$ form and amorphous phases comparing with bulk $TiO_2$. While the conventional bulk $TiO_2$ had band gap of $3.0{\sim}3.2eV$ resulting in absorption edges at 380 nm and 415 nm, $ALD-TiO_{2-x}$ layers showed absorption edges at 197 nm and 250 nm. Therefore, our nano-thick $ALD-TiO_{2-x}$ was able to absorb shorter UV region and showed excellent transmittance in visible region. Our result implies that our newly proposed nano-thick $TiO_{2-x}$ using ALD process may improve transmittance in visible rays and be able to absorb shorter UV light effectively.

• The Journal of the Korea institute of electronic communication sciences
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• v.14 no.2
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• pp.297-302
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• 2019

In this study, we deposited ITO thin films on buffer layer of $Nb_2O_5(8nm)/SiO_2(45nm)$ using DC magnetron sputtering method and investigated its electrical and optical properties with various DC powers(100~400 W). The surface of the ITO thin film was observed by AFM. All thin films had defected free surface such as pinholes and cracks. The thin film deposited at DC power of 200 W exhibited the smallest surface roughness of 1.431nm. As a result of electrical and optical measurements, the ITO thin film deposited at DC power of 200 W which showed the lowest resistivity of $3.03{\times}10^{-4}{\Omega}-cm$. The average transmittance in the visible light region(400 to 800 nm) and the transmittance at the wavelength of 550nm were found to be 85.8% and 87.1%, respectively. The chromaticity(b*) was also a relatively good value as 2.13. The figure of merit obtained from the sheet resistance of the ITO thin film, the average transmittance in the visible light region and the transmittance at the wavelength of 550nm were the best values of $2.50{\times}10^{-3}{\Omega}^{-1}$ and $2.90{\times}10^{-3}{\Omega}^{-1}$ at a DC power of 200W, respectively.

• Journal of Information Display
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• v.9 no.3
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• pp.23-27
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• 2008

This paper reports that well-balanced white emission with three primary colors can be achieved with a simple white organic light-emitting diode (WOLED) structure of ITO / $\alpha$-NPD (50 nm) / $\alpha$-NPD: Btp2Ir(acac) (8 wt%, 6 nm) / $\alpha$-NPD (5 nm) / BCP (3 nm) / $Alq_3$: C545T (0.5 wt%, 10 nm) / $Alq_3$ (40 nm) / LiF (0.5 nm) / Al (100 nm). The external quantum efficiency of the device reached 3.8% at a current density (luminance) of 4.6 mA/$cm^2$ (310 cd/$m^2$), and the maximal luminance of the device reached 19,000 cd/$m^2$ at 11.5 V. The insignificant blue shift of the emitting color with an increasing current density can be attributed to the narrowing of the exciton formation zone width.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.293-294
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• 2012

백색 OLED 조명 분야에서 색 변환은 큰 이슈가 되고 있다. 하지만 청색 유기물의 발광 특성이 좋지 못하여 아직까지 정착이 되지 못하고 있는 것이 현실이다. 본 연구에서는 발광 효율이 낮은 청색 OLED 대신 청색 LED와 황색 OLED를 사용하여 색 변환을 통한 백색 발광 panel을 제조하고 전기 및 광학적 특성을 평가하였다. 먼저 OLED소자는 진공증착방법을 사용하여 ITO (150 nm)/KHI-001 (5 nm)/LG-101 (10 nm)/KHT-001 (25 nm)/ PGH-02 (25 nm): Ir (mpp) 3 (8%): PRD-003 (0.3%)/TMM-004 (10 nm)/LG-201 (20 nm): LiQ (50%)/Al (150 nm) 구조를 갖는 발광면적 $70{\times}70mm^2$의 황색 OLED panel을 제작하였다. CIE 1931색좌표는(0.49, 0.49)이고, 효율은 $41.61{\ell}m/W$이다. 그리고 LED는 청색 칩을 한 줄로 나열하여 LED bar를 만들었고 여기에 도광판, 리버스 프리즘시트, 확산시트 그리고 반사시트를 더하여 점광원을 면광원화 하였다. CIE 1931색좌표가 (0.15, 0.04)이며 효율은 $3.56{\ell}m/W$이다. 황색 OLED를 청색 LED 면광원 뒤에 붙여서 두 빛이 도광판 위쪽으로 나오게 하였다. 이렇게 hybrid된 빛은 인가 전류를 변화 시킴으로써 색온도 3,200 K의 warm white에서 7,800 K의 cool white까지 변환이 가능하였다. 그리고 순백의 hybrid 빛을 얻을 수 있었는데 이때의 색온도는 4200K이고 CIE 1931색좌표는(0.34, 0.33)이며 연색지수는 89였다.

• Journal of Magnetics
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• v.5 no.2
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• pp.44-49
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• 2000

Computer simulation of sensing current effects on the magnetic and magnetoresistance properties of a crossed spin-valve head is carried out. The spin-valve head has the following layer structure: Ta (8.0 nm)/NiMn (25 nm)/NiFe (2.5 nm)/Cu (3.0 nm)/NiFe (5.5 nm)/Ta (3.0 nm), and it is 1500 nm long and 600 nm wide. Even with a high pinning field of 300 Oe and a high hard-biased field of 50 Oe, the ideal crossed spin-valve structure, which is essential to the symmetry of the output signal and hence high density recording, is not realized mainly due to large interlayer magnetostatic interactions. This problem is solved by applying a suitable magnitude of sensing currents along the length direction generating magnetic fields in the width direction. The ideal spin-valve head is expected to show good symmetry of the output signal. This has not been shown explicitly in the present simulation, however, The reason for this is possibly related to the simple assumption used in this calculation that each magnetic layer consists of a single domain.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.18 no.2
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• pp.61-67
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• 1982

Optical properties of sea water were studied in the southern sea of Korea, based on ten oceanographic stations in July, 1980. Submarine daylight intensity was measured at intervals of 5m depth in the upper 70m layer by using the underwater irradiameter (Kahlsico # 268 WA 360). The mean absorption coefficients of the sea water were shown as 0.102 (0.066~0.137), 0.119 (0.069~0.154), 0.091 (0.054~.0123), and 0.095 (0.056~0.129) for clear, red, green, and blue color respectively. The transparency ranged from 13 to 25 meters (mean 17.1 m). The mean water color in this area was 3.9 (3-5) in Forel scales. The relation between absorption coefficient (k) and transparency (D) was k=1.17/D, k=2.01/D, k=1.52/D, and k=1.60/D for clear, red, green, and blue color respectively. The rates of light penetration for clear, red, green, and blue color in four different depths were computed with reference to the surface light intensity respectively. The mean rates of light penetration in proportion to depths were as follows; clear : 57.3%(5m), 20.82%(15m), 5.16%(30m), 0.94%(50m). red : 52.2%(5m), 15.99%(15m), 2.99%(30m), 0.39%(50m). green : 60.9%(5m), 24.51%(15m), 7.11%(30m), 1.56%(50m). blue : 59.4%(5m), 22.92%(15m), 6.09%(30m), 1.29%(50m).

• The Journal of the Korea institute of electronic communication sciences
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• v.16 no.3
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• pp.443-450
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• 2021

After selecting a PES substrate with excellent thermal stability and optical properties among plastic substrates, a SiO₂ thin film was deposited as a buffer layer to a thickness of 20nm by plasma-enhanced chemical vapor deposition to compensate for the high moisture absorption. Then, the ITZO thin film was deposited by a RF magnetron sputtering method to investigate electrical and optical properties according to RF power. The ITZO thin film deposited at 50W showed the best electrical properties such as a resistivity of 8.02×10^-4 Ω-cm and a sheet resistance of 50.13Ω/sq.. The average transmittance of the ITZO thin film in the visible light region(400-800nm) was relatively high as 80% or more when the RF power was 40 and 50W. Figure of Merits (Φ_TC and FOM) showed the largest values of 23.90×10^-4 Ω^-1 and 5883 Ω^-1cm^-1, respectively, in the ITZO thin film deposited at 50W.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.57-58
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• 2008

We have studied an organic layer and semitransparent Al electrode thickness dependent optical properties and microcavity effects for top-emission organic light-emitting diodes. Manufactured top-emission device structure is Al(100nm)/TPD(xnm)/Alq(ynm)/LiF(0.5nm)/Al(25nm). While a thickness of total organic layer was varied from 85nm to 165n, a ratio of those two layers was kept to be about 2:3. Semitransparent Al cathode was varied from 20nm to 30nm for the device with an organic layer total thickness of 140nm. As the thickness of total organic layer increases, the emission spectra show a shift of peak wavelength from 490nm to 580nm, and the full width at half maxima from 90nm to 35nm. The emission spectra show a blue shift as the view angle increases. Emission spectra depending on a transmittance of semitransparent cathode show a shift of peak wavelength from 515nm to 593nm. At this time, the full width at half maximum was about to be a constant of 50nm. With this kind of microcavity effect, we were able to control the emission spectra from the top-emission organic light-emitting diodes.