• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04a
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• pp.43-46
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• 2004

CuPc와 $C_{60}$을 이용하여 ITO/CuPc/Al의 CuPc 단층구조와 $ITO/CuPc/C_{60}/Al$의 이종접합 구조에서의 광기전 특성을 연구하였다. CuPc 단층구조에서는 CuPc층의 두께를 10nm에서 50nm로 가변하여 전압-전류 특성을 측정한 결과 40nm 부근에서 최적화된 전기적인 특성이 나타났으며, $CUPC/C_{60}$의 이종접합 구조에서는 CuPc와 $C_{60}$의 두께 비율을 1 : 1 (20nm : 20nm), 1 : 2 (20nm : 40nm), 1 : 3 (20nm : 60nm)으로 가변하여 측정한 결과, 1 : 2의 두께비에서 최적화된 특성을 얻었다. 광원은 500W Xe lamp(ORIEL 66021)를 이용하였으며, 광원의 세기는 보정된 radiometer/photometer (International Inc. IL14004)와 Si-photodiode로 측정하였다.

• Current Optics and Photonics
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• v.3 no.1
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• pp.33-39
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• 2019

We report development of a frequency-stabilized mid-infrared continuous-wave (cw) optical parametric oscillator (OPO) based on a fan-out grating MgO:PPLN crystal pumped at 1064 nm. The OPO resonator was designed as a pump-enhanced standing-wave cavity that resonates to the pump and signal beams. To realize stable operation of the OPO, we applied a modified Pound-Drever-Hall technique, which is a well-known method for powerful laser frequency stabilization. Tuning a poling period of the fan-out grating of the crystal allows wavelength-tunable OPO outputs from 1510 nm to 1852 nm and from 2500 nm to 3600 nm for signal and idler beams, respectively. At the idler wavelengths of 2500 nm, 3000 nm and 3500 nm, we achieved more than 50 mW of output powers at a pumping power of 1.1 W. The long-term stability of the OPO was confirmed by recording the power and wavelength variations of the idler for an hour.

• Proceedings of the Materials Research Society of Korea Conference
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• 2008.05a
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• pp.32.1-32.1
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• 2008

• Journal of the Korean Vacuum Society
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• v.17 no.6
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• pp.528-537
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• 2008

60 nm and 20 nm thick hydrogenated amorphous silicon(a-Si:H) layers were deposited on 200 nm $SiO_2$/single-Si substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD). Subsequently, 30 nm-Ni layers were deposited by an e-beam evaporator. Finally, 30 nm-Ni/(60 nm and 20 nm) a-Si:H/200 nm-$SiO_2$/single-Si structures were prepared. The prepared samples were annealed by rapid thermal annealing(RTA) from $200^{\circ}C$ to $500^{\circ}C$ in $50^{\circ}C$ increments for 40 sec. A four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscopy(FE-SEM), transmission electron microscopy(TEM), and scanning probe microscopy(SPM) were used to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure, and surface roughness, respectively. The nickel silicide from the 60 nm a-Si:H substrate showed low sheet resistance from $400^{\circ}C$ which is compatible for low temperature processing. The nickel silicide from 20 nm a-Si:H substrate showed low resistance from $300^{\circ}C$. Through HRXRD analysis, the phase transformation occurred with silicidation temperature without a-Si:H layer thickness dependence. With the result of FE-SEM and TEM, the nickel silicides from 60 nm a-Si:H substrate showed the microstructure of 60 nm-thick silicide layers with the residual silicon regime, while the ones from 20 nm a-Si:H formed 20 nm-thick uniform silicide layers. In case of SPM, the RMS value of nickel silicide layers increased as the silicidation temperature increased. Especially, the nickel silicide from 20 nm a-Si:H substrate showed the lowest RMS value of 0.75 at $300^{\circ}C$.

• Proceedings of the Optical Society of Korea Conference
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• 1991.06a
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• pp.50-55
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• 1991

Mg 원자선속의 냉각에 쓰일 diode laser의 특성과 이용가능성을 연구하였다. Mg 원자의 3P2-3D3 천이의 공명선 383.8nm를 얻기 위하여 Mitsubishi사의 ML형 laser diode를 택하여 주입전류와 온도를 변화시키고, 회절격자를 써서 767.6nm의 laser 광을 얻은 후 LiIO3 결정에 의해 383.8nm인 제2조화파를 생성하였다. Ring cavity 내에서 기본파가 공명할 때 증강계수는 15이었다.

• Korean Journal of Remote Sensing
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• v.33 no.5_1
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• pp.571-585
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• 2017

The number of spaceborne optical sensors including red-edge band has been increasing since red-edge band is known to be effective to enhance the information content on biophysical characteristics of vegetation. Considering that the Agriculture and Forestry Satellite is planning to carry an imaging sensor having red-edge band, we tried to analyze the current status and potential of red-edge band. As a case study, we analyzed the effect of using red-edge band and tried to find the optimum band width and wavelength region of the red-edge band to estimate leaf area index (LAI) of very dense tree canopy. Field spectral measurements were conducted from April to October over two tree species (white oak and pitch pine) having high LAI. Using the spectral measurement data, total 355 red-edge bands reflectance were simulated by varying five band width (10 nm, 20 nm, 30 nm, 40 nm, 50 nm) and 71 central wavelength. Two red-edge based spectral indices(NDRE, CIRE) were derived using the simulated red-edge band and compared with the LAI of two tree species. Both NDRE and CIRE showed higher correlation coefficients with the LAI than NDVI. This would be an alternative to overcome the limitation of the NDVI saturation problem that NDVI has not been effective to estimate LAI over very dense canopy situation. There was no significant difference among five band widths of red-edge band in relation to LAI. The highest correlation coefficients were obtained at the red-edge band of center wavelength near the 720 nm for the white oak and 710 nm for the pitch pine. To select the optimum band width and wavelength region of the red-edge band, further studies are necessary to examine the relationship with other biophysical variables, such as chlorophyll, nitrogen, water content, and biomass.

• Korean Journal of Materials Research
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• v.33 no.3
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• pp.101-105
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• 2023

A mixture of elemental Co₅₀Si₅₀ powders was subjected to mechanical alloying (MA) at room temperature to prepare a CoSi thermoelectric compound. Consolidation of the Co₅₀Si₅₀ mechanically alloyed powders was performed in a spark plasma sintering (SPS) machine using graphite dies up to 800 ℃ and 1,000 ℃ under 50 MPa. We have revealed that a nanocrystalline CoSi thermoelectric compound can be produced from a mixture of elemental Co₅₀Si₅₀ powders by mechanical alloying after 20 hours. The average grain size estimated from a Hall plot of the CoSi intermetallic compound prepared after 40 hours of MA was 65 nm. The degree of shrinkage of the consolidated samples during SPS became significant at about 450 ℃. All of the compact bodies had a high relative density of more than 94 % with a metallic glare on the surface. X-ray diffraction data showed that the SPS compact produced by sintering mechanically alloyed powders for 40-hours up to 800 ℃ consisted of only nanocrystalline CoSi with a grain size of 110 nm.

• Korean Journal of Materials Research
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• v.14 no.11
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• pp.795-801
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• 2004

The injection molded Fe sintered bodies were fabricated using two kinds of Fe powders haying 50 nm and $3\sim5{\mu}m$ in diameter. In the using of Fe powder having 50 nm in diameter, the comparatively dense bodies ($94\sim97\%$) were obtained even at low sintering temperature ($600\sim700^{\circ}C$), while in the sintered bodies ($1000^{\circ}C$) using $3\sim5{\mu}m$ Fe powder, their relative densities showed low values about $93\%$, although they were strongly depend on the sintering temperature and volume ratio of Fe powder and binder. In the sintered bodies using of 50 nm Fe powders, the volume shrinkage and grain size increased as the sintering temperature increased, but the values of hardness decreased. In the sample sintered at $650^{\circ}C$, the values of relative density, volume shrinkage and grain size were $96\%,\;37\%\;and\;0.97{\mu}n$, respectively and the minimum value of wear depth was obtained due to combination of fine grain and comparatively high density.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.4
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• pp.300-304
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• 2008

A novel characterization method was investigated to estimate the trap generation during the program /erase cycles in nand flash memory cell. Utilizing Fowler-Nordheim tunneling current, floating gate potential and oxide electric field, we established a quantitative model which allows the knowledge of threshold voltage (Vth) as a function of either program or erase operation time. Based on our model, the derived results proved that interface trap density (Nit) term is only included in the program operation equation, while both Nit and oxide trap density (Not) term are included in the erase operation equation. The effectiveness of our model was tested using 50 nm nand flash memory cell with floating gate type. Nit and Not were extracted through the analysis of Program/Erase speed with respect to the endurance cycle. Trap generation and cycle numbers showed the power dependency. Finally, with the measurement of the experiment concerning the variation of cell Vth with respect to program/erase cycles, we obtained the novel quantitative model which shows similar results of relationship between experimental values and extracted ones.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.62.1-62.1
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• 2010

CIS(CuInSe2)계 화합물 태양전지는 높은 광흡수계수와 열적 안정성 및 조성 조절을 통한 밴드갭 조절이 용이해 고효율 박막 태양전지로 각광 받고 있다. 또한 CIGS 태양전지는 기존의 유리기판 대신 유연한 기판을 사용해 flexible 태양전지 제조가 가능하다. 이러한 유연기판은 보통 stainless steel과 같은 금속 기판이 많이 사용되는데 기존의 soda-lime glass 기판과는 달리 금속기판에는 Na이 첨가되어 있지 않아 별도의 Na첨가를 필요로 한다. Na은 CIGS 흡수층의 조성조절을 용이하게 하여 태양전지의 변환 효율을 향상시키는 역할을 한다. 본 연구에서 기판은 Na이 첨가되어있지 않은 corning glass를 사용 하였으며 NaF를 이용해 Mo가 증착된 기판에 NaF의 두께를 달리하며 증착해 CIGS 흡수층의 grain 사이즈를 비교 하였으며 그 후 태양전지 소자를 제조해 광전특성을 분석하였다. 후면 전극으로 약60nm 두께의 Mo를 DC Sputtering 방법을 이용해 증착 하였다. buffer층으로는 약 50nm의 CdS층을 CBD방법을 이용하여 제조 하였으며 TCO 층으로 약 50nm의 i-ZnO와 약 450nm의 Al-ZnO를 RF Sputtering방법으로 증착 하였다. 마지막으로 앞면 전극으로 약 $1{\mu}m$의 Al을 Thermal Evaporation방법으로 증착하였다. 태양전지 소자의 면적은 $0.49cm^2$로 효율을 비교 분석하였다.