• Journal of IKEEE
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• v.24 no.4
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• pp.1093-1097
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• 2020

This work describes the design and characterization of a Ku-band monolithic microwave integrated circuit (MMIC) power amplifier (PA) for satellite communication applications. The device technology used relies on 0.25 ㎛ gate length gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (PHEMT) of wireless information networking (WIN) semiconductor foundry. The developed Ku-band PHEMT MMIC power amplifier has a small-signal gain of 22.2~23.1 dB and saturated output power of 34.8~35.4 dBm over the entire band of 13.75 to 14.5 GHz. Maximum saturated output power is a 35.4 dBm (3.47 W) at 13.75 GHz. Its power added efficiency (PAE) is 30.6~37.83% and the chip dimensions are 4.4 mm×1.9 mm. The developed 3 W PHEMT MMIC power amplifier is expected to be applied in a variety of Ku-band satellite communication applications.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.2
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• pp.245-251
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• 2017

The proposed variable pawer divider in this paper is composed of one equal power 2-way Wilkinson power divider, two variable phase shifters with 90-degree phase variation to be connected two output paths of the 2-way power divider, and one branchline coupler to combine output signals of two variable phase shifter. The proposed variable power divider can theoretically have an arbitrary power division ratio ranging from ${\infty}:1$ to ${\infty}:1$ due to 90-degrees phase variation of two phase shifter. The proposed power divider circuit fabricates on laminated TLX-9(h=20 mil, er=2.5; Taconic) with a center frequency of 1.7 GHz. The power division ratio of the fabricated prototype varies from about 1:100 to 200:1, with an input reflection characteristic(S11) of below -16 dB, an insertion loss of about -1.0 dB, and an isolation characteristic of below -17 dB between two output ports in the range 1.65-1.75 GHz.

• Journal of Advanced Navigation Technology
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• v.25 no.3
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• pp.223-228
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• 2021

In this paper, we proposed a slot-type antenna with microstrip feed embedded in a PCB for Zigbee communication (2.4 ~ 2.484 GHz). The proposed antenna is designed on a FR-4 substrate with dielectric constant 4.3, thickness of 1.6 mm, and size of 50×65 mm². Through simulations, trends of design parameters are analyzed and optimized, and the proposed antenna composed with three slots satisfy the frequency band. The measured impedance bandwidths (|S₁₁| ≤ -10 dB) of fabricated antenna are 900 MHz (2 ~ 2.9 GHz) in Zigbee frequency band. In addition, the radiation pattern showed omnidirectional characteristics for E and H-planes, and the gain of antenna in Zigbee frequency band was 1.782 dBi.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.11
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• pp.48-53
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• 2007

In this paper, a high LO-RF isolation W-band MIMIC single-balanced mixer was designed and fabricated using a branch line coupler and a ${\lambda}/4$ transmission line. The W-band MIMIC single-balanced mixer was designed using the $0.1\;{\mu}m$ InGaAs/InAlAs/GaAs Metamorphic HEMT diode. The fabricated MHEMT was obtained the cut-off frequency($f_T$) of 154 GHz and the maximum oscillation frequency($f_{max}$) of 454 GHz. The designed MIMIC single-balanced mixer was fabricated using $0.1\;{\mu}m$ MHEMT MIMIC process. From the measurement, the conversion loss of the single-balanced mixer was 12.8 dB at an LO power of 8.6 dBm. P1 dB(1 dB compression point) of input and output were 5 dBm and -8.9 dBm, respectively. The LO-RF isolations of single-balanced mixer was obtained 37.2 dB at 94 GHz. We obtained in this study a higher LO-RF isolation compared to some other balanced mixers in millimeter-wave frequencies.

• Composites Research
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• v.21 no.5
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• pp.9-14
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• 2008

Carbon nanofibers (CNFs) were used as dielectric lossy materials and NiFe particles were used as magnetic lossy materials. Total twelve specimens for the three types such as dielectric, magnetic and mixed radar absorbing materials (RAMs) were fabricated. Their complex permittivities and permeabilities in the range of $2{\sim}18$ GHz were measured using the transmission line technique. The parametric studios for reflection loss characteristics of each specimen to design the single-layered RAMs were performed. The mixed RAMs generally showed the improved absorbing characteristics with thinner matching thickness. One of the mixed RAMs, MD3with the thickness of 2.00 mm had the 10 dB absorbing bandwidth of 4.0 GHz in the X-band ($8.2{\sim}12.4$ GHz). It also showed very broad 10 dB absorbing bandwidth as wide as 6.0 GHz in the Ku-band ($12.0{\sim}18.0$ GHz) with the thickness tuning to 1.49 mm. The experimental results for selected several specimens were in very good agreements with simulation ones in terms of the overall reflection loss characteristics and 10 dB absorbing bandwidth.

• ETRI Journal
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• v.19 no.2
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• pp.48-58
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• 1997

Using high quality high-$T_c$ superconducting (HTS) YBCO thin films, we designed and fabricated 3-pole, 5-pole, and 7-pole lowpass filters consisting of microstrip transmission lines and open-stub lines. We measured the microwave response of the filters in the temperature range of T=85 K to 27 K. AtT=30 K, the observed inband insertion loss was 0.14dB and 0.02dB for the 5-pole and 7-pole filters, respectively. The cut-off frequency was 4.7 GHz for the 5-pole filter and 7.9GHz for the 7-pole filter. To the authors' knowledge, the measured inband insertion losses are the best values reported so far for the open-stub line type HTS multipole lowpass filters. The skirt property of the 5-pole filter showed a large improvement over that of the 3-pole filter as predicted from the simulation. We found that, to obtain a stable performance, the HTS multipole lowpass filters should be operated at the temperatures between 60% and 70% of $T_c$.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.487-488
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• 1995

Broadband Microwave Low Noise Amplifier(LNA) is designed. The matching method using the broadband BPF(BandPass Filter) is introduced in this paper. This method is that the filter having the same reflection coefficient of Microwave GaAs FET in the desired bandwidth is located on the input stage of FET. The Simulated results is obtained that the $S_{21}$ and noise figure in 2.5GHz$\sim$9GHz, band are 8.5dB $\pm$ 1.5dB, 2.5dB $\pm$ 0.3dB respectively.

• Journal of The Institute of Information and Telecommunication Facilities Engineering
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• v.9 no.4
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• pp.153-157
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• 2010

In this paper, a dual band LNA (Low Noise Amplifier) with a LC-tank matching circuit is designed for 912MHz and 2.45GHz RFID reader. The operating frequency is decided by the LC-tank resonance. The simulated results demonstrate that S21 parameter is 11.683dB and 5.748dB at 912MHz and 2.45GHz, respectively, and the S11 are -10.796dB and -21.261dB, the S22 are -7.131dB and -14.877dB at the same frequencies. The measured NF (Noise Figure) is 0.471 and 1.726 at 912MHz and 2.45GHz, respectively.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.3
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• pp.9-16
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• 1997

A 23GHz 1-stage LNA was designed by using new topology of coupled line type with EEsof softwares and modified by using MPIE numerical analysis. The parallel coupled filter-type matching sections give impedance matching and DC blocking simultaneously, and have small discontinuities. This matching scheme has simple structure in the design process and give small error. The EFT chip was directly attached to the ground metal. The designed LAN gives 6.2dB gain and 2.5dB noise figure without considering the loss of connectors. Through these results, it was verified that our design process, matching schemes and fabrication technologies was valied for developing 20GHz-band LNA.

• Proceedings of the Korea Society for Industrial Systems Conference
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• 2003.11a
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• pp.481-486
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• 2003

RF 전파는 신호레벨이 비교적 작고 간섭 현상에 매우 민감한 특성을 가지고 있다. 따라서 이러한 미소한 입력전파의 수신시 수신기 전체의 감도를 높이고 잡음을 줄일 목적으로 사용되는 고주파 증폭기가 저잡음 증폭기이다. 본 논문에서는 FET 증폭기를 이용한 LNA설계시 직렬 궤환에 의한 최소잡음과 최소입력정재파비의 최적 설계 파라미터를 검증한다. LNA의 기본적 특성 분석과 IMT-2000 구역의 1. 9GHZ대의 휴대단말기용 LNA와 블루투스용 2.4GHz대의 LNA 그리고, 지능형교통시스템에 응용되는 5.8GHz대의 단거리전용통신 LNA를 구현하고 각 주파수별로 특성이 다른 BJT, FET 증폭기를 적용하여 설계하고 성능 분석 및 최적의 파라미터를 도출하였다.