• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.196-197
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• 2005

The $ZnNb_2O_6$ ceramics with 3wt% CuO and $B_2O_2$(1,3,5wt%) were prepared by the conventional mixed oxide method. The ceramics were sintered at the temperature of $1000^{\circ}C\sim1050^{\circ}C$ for 3hr. in air. The structural properties were investigated with sintering temperature by XRD and SEM. Also, the microwave dielectric properties were investigated with sintering temperature. Increasing the sintering temperature, the peak of second phase ($Cu_3Nb_2O_8$) was increased. But no significant difference was observed as sintering temperature. In the $ZnNb_2O_6$ ceramics with 3wt% CuO and 5wt% $B_2O_3$ sintered at $1025^{\circ}C$ for 3hr, the dielectric constant, quality factor, temperature coefficient of the resonant frequency were 22.92, 20,271GHz, -14.27ppm/$^{\circ}C$, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.292-294
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• 1996

Dielectric properties were investigated at Mn doped 0.17($Ba_{0.53}$, $Pb_{0.47}$)0-$0.16Nd_2O_3$-$0.67TiO_2$ system in microwave frequency. It was observed that dielectric constant of 90.1, quality factor of 1320 (at 3.8GHz) and temperature coefficient of resonance frequency 2.3 ppm/$^{\circ}C$ for 0.5wt% Mn doped 0.17($Ba_{0.53}$, $Pb_{0.47}$)0-$0.16Nd_2O_3$-$0.67TiO_2$ system in sintering condition $1290^{\circ}C$/2hr. The quality factor increase due to the compensation effect of Mn ions yp to 0.5wt% and the decrease due to the interface relaxation effect. The temperature coefficient of resonance frequency increases to negative direction with increasing the amounts of Mn.

• Progress in Superconductivity
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• 제2권2호
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• pp.92-96
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• 2001

We have fabricated a modified hairpin-type YBa$_2$Cu$_3$O$_{7-{\delta}}$ (YBCO) 2-pole microstrip bandpass filter with the center frequency of 5.8 GHz. We designed a hairpin-type filter with interdigital-coupled inner poles to improve the filter performance. Compared to a typical hairpin-type filter of the same size, the center frequency, the bandwidth and the insertion loss appeared smaller by 14.5% ,29.6%, and 0.55 dB, respectively. The dimensions of the filter were 13.7mm ${\times}$3.3 mm. YBCO films deposited on r-cut sapphire buffered with a CeO$_2$thin layer were used fur making the filter.

• E2M - 전기 전자와 첨단 소재
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• 제8권2호
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• pp.224-228
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• 1995

0.15(B $a_{0.95}$ S $r_{0.05}$)O-0.15S $m_{2}$ $O_{3}$-0.7Ti $O_{2}$ ceramics were fabricated by the mixed-oxide method. Microwave dielectric properties were investigated with sintering conditions. Increasing the sintering temperature from 1300 to 1375[.deg. C], the sintered density was increased from 5.44 to 5.63[g/c $m^{3$]. Increasing the sintering temperature, dielectric constant and quality factor were increased and temperature coefficient of resonant frequency was independent of sintering temperature. In the specimen sintered at 1375[.deg. C], dielectric constant, quality factor and temperature coefficient of resonant frequency were 80.79, 2784(at 3[GHz]), +11.07[ppm/.deg. C], respectively..

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.505-506
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• 2006

In this paper, the linearization technique for CMOS low-noise amplifier (LNA) using the derivative superposition method through the multiple gated transistors configuration is presented. LNA based on 0.13um RF CMOS process has been implemented with a modified cascode configuration using multiple gated common source transistors to fulfill a high linearity. Compared with a conventional cascode type LNA, the third order input intercept point (IIP3) per DC power consumption (IIP3/DC) is improved by 3.85 dB. The LNA achieved 2.5-dBm IIP3 with 13.4-dB gain, 3.6 dB NF at 2.4 GHz consuming 8.56 mA from a 1.5-V supply.

• Nuclear Engineering and Technology
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• 제38권8호
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• pp.785-792
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• 2006

The microwave heating system of KSTAR consists of ECH and LHCD. ECH and LHCD offer the benefits ofa reliable operation at the start of plasma formation and a non-inductive current drive durable steady state operation, respectively. LHCD uses a C-band microwave system with a frequency of 5 GHz. A pulsed power modulator with a power of 3.6 MW, $4{\mu}S$, 200 pps is required to drive the high-powered magnetron. The development of a pulse modulator with 1:4 pulse transformers is the focus of the research in this study. The peak power handling capability is 3.6 MW (45 kV, 90 A at load side with a pulse width of $4{\mu}S$). This paper describes the system overview and test results of the pulsed modulator. In particular, a simulated waveform is compared with the tested waveform.

• 한국전기전자재료학회논문지
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• 제16권5호
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• pp.397-403
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• 2003

Microwave dielectric properties of (1-x)ZnW $O_4$-xTi $O_2$ ceramic systems were investigated with calcination temperatures and Ti $O_2$ contents. The ZnW $O_4$ ceramic could be suitably sintered at 1075$^{\circ}C$ and showed the dielectric constant of 13.6, quality factor(Q$\times$ $f_{O}$value) of 22,000 and temperature coefficient of resonant frequency($\tau$$_{f}$) of -65$\pm$2ppm/$^{\circ}C$. Increasing the amount of Ti $O_2$ in the range of 0.25 to 0.45 mol, the dielectric constant and $\tau$$_{f}$ increased due to the role of Ti $O_2$ but the quality factor decreased due to the increase of phase boundaries. The 0.7ZnW $O_4$-0.3Ti $O_2$ ceramic showed the dielectric constant of 19.8, qualify factor(Q$\times$ $f_{0}$) of 20,000 and $\tau$$_{f}$ of -3$\pm$1ppm/$^{\circ}C$.>.EX>.>.>.

• 한국전자파학회논문지
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• 제18권8호
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• pp.880-886
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• 2007

본 논문에서는 효율 특성에서 특화된 전력 증폭기(PA)와 개선된 바이어스 모듈레이터를 이용하여 새로운 하이브리드 포락선 제거 및 복원(EER) 전력 송신기를 제안하였다. 전력 증폭기는 모듈레이션 신호의 평균 전력영역에서 대부분 동작하기 때문에 평균 드레인 바이어스 전압에서 전력 증폭기의 효율은 전체 전력 송신기의 효율 특성에 매우 중요한 영향을 미친다. 따라서 전력 증폭기의 효율을 평균 드레인 바이어스 전압 영역에서 최적화하였다. 또한, 바이어스 모듈레이터는 메모리 영향을 최소화하기 위하여 에미터 팔로워(Emitter Follower)와 결합되도록 하였다. 포화 전력 증폭기인 역 Class F급 전력 증폭기가 1 GHz 대역 포워드 링크 싱글 캐리어를 가지는 WCDMA 신호에 대해서 최고 전력이 5W인 LDMOSFET을 이용하여 설계되었다. 실험 결과, 바이어스 모듈레이터는 31.8V의 최고 전력 크기를 가지면서 64.16%의 효율을 유지하였다. 제안된 전력 증폭기와 바이어스 모듈레이터를 결합한 전력 송신기는 기존 방식으로 설계된 전력 증폭기와 결합하였을 경우보다 8.11%나 개선된 44.19%의 전체 효율 특성을 보였다. 게다가, F급 동작을 보이면서 전체 출력 전력은 기존 방식의 전력 증폭기를 결합할 경우보다 2.9dB 개선된 32.33 dBm으로 개선되었고, PAE와 5MHz 옵셋에서의 ACLR은 각각 38,28%, -35.9 dBc를 기록하였다. 이와 같은 결과들은 고선형성과 함께 고효율 특성을 가지는 전력 송신기에 매우 적합한 구조가 될 수 있다는 것을 명확히 보여주고 있다.

• 한국세라믹학회지
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• 제51권5호
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• pp.386-391
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• 2014

Silicon nitride ($Si_3N_4$) is regarded as one of the most promising materials for high temperature structural applications due to its excellent mechanical properties at both room and elevated temperatures. However, one high-temperature $Si_3N_4$ material intended for use in radomes has a relatively high dielectric constant of 7.9 - 8.2 at 8 - 10 GHz. In order to reduce the dielectric constant of the $Si_3N_4$, an in-situ reaction process was used to fabricate $Si_3N_4-SiO_2$-BN composites. In the present study, an in-situ reaction between $B_2O_3$ and $Si_3N_4$, with or without addition of BN in the starting powder mixture, was used to form the composite. The in-situ reaction process resulted in the uniform distribution of the constituents making up the composite ceramic, and resulted in good flexural strength and dielectric constant. The composite was produced by pressure-less sintering and hot-pressing at $1650^{\circ}C$ in a nitrogen atmosphere. Microstructure, flexural strength, and dielectric properties of the composites were evaluated with respect to their compositions and sintering processes. The highest flexural strength (193 MPa) and lowest dielectric constant (5.4) was obtained for the hot-pressed composites. The strength of these $Si_3N_4-SiO_2$-BN composites decreased with increasing BN content.

• Composites Research
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• 제17권6호
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• pp.22-27
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• 2004

본 논문은 비대칭 샌드위치 구조체인 표면안테나 구조의 설계 및 제작 그리고 피로거동의 관한 연구이다. 사용될 재료는 전기적 특성. 유전율 그리고 기계적 특성을 동시에 만족하여야 한다. 안테나의 전기적 특성을 위해 샌드위치 구조 층 사이에 마이크로스트립 안테나를 삽입시켰고, 위성통신을 목적으로 적절한 대역에서 설계하였다. 최종 제작된 표면 안테나 구조물은 $16{\;}{\tiems}{\;}8$개의 배열안테나로 설계시의 목적에 부합하는 특성을 나타내었다. 4점 굽힘실험을 통하여 표면안테나 구조물의 정하중 및 피로거동을 분석하였다. 피로하중은 0.75(1.875 kN) 하중수준을 나타내었다. 파단 시 변위는 굽힘실험 변위량인 5 mm 보다 많은 5.42 mm에서 파괴가 발생함을 볼 수 있었다. 피로실험결과와 단일하중 시의 피로수명 예측 식을 비교하였다.