• Title/Summary/Keyword: 5.8 GHz

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Initial Frequency Preset Technique for Fast Locking Fractional-N PLL Synthesizers

  • Sohn, Jihoon;Shin, Hyunchol
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.17 no.4
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    • pp.534-542
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    • 2017
  • This paper presents a fast locking technique for a fractional-N PLL frequency synthesizer. The technique directly measures $K_{VCO}$ on a chip, computes the VCO's target tuning voltage for a given target frequency, and directly sets the loop filter voltage to the target voltage before the PLL begins the normal closed-loop locking process. The closed-loop lock time is significantly minimized because the initial frequency of the VCO are put very close to the desired final target value. The proposed technique is realized and designed for a 4.3-5.3 GHz fractional-N synthesizer in 65 nm CMOS and successfully verified through extensive simulations. The lock time is less than $12.8{\mu}s$ over the entire tuning range. Simulation verifications demonstrate that the proposed method is very effective in reducing the synthesizer lock time.

Insights on the rotation measure of the M87 jet on arc-second scales

  • Algaba, Juan-Carlos;Asada, Keiichi;Nakamura, Masanori
    • The Bulletin of The Korean Astronomical Society
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    • v.39 no.2
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    • pp.73.2-73.2
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    • 2014
  • We investigate the rotation measure (RM) of the nearby low luminosity AGN M87 by using archival polarimetric VLA data at 8, 15, 22 and 43 GHz. For the first time, the RM properties of its jet are resolved at at arc-second scales. The distribution of the RM appears to be a gaussian with a mean value of ~200rad/m2 and the power spectrum follows a power law with index -2.5. A simple Kolmogorov model assuming a random turbulent magnetic fields extrinsic to the jet appears not to be adequate to explain the observed RM power spectra. On the other hand, underlying RM gradients possibly connected with the jet could be a possible interpretation.

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InAlAs/InGaAs schottky barrier enhanced metal semiconductor metal photodiode with very low dark current (매우 낮은 암전류를 가지는 schottky barrier enhanced InAlAs/InGaAs metal semiconductor metal 광다이오드)

  • 김정배;김문정;김성준
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.34D no.5
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    • pp.61-66
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    • 1997
  • In this paper we report the fabrication of an InGaAs metal-semiconductor-metal (MSM) photodiode(PD) which an InAlAs barrier enhancement layer that has very low dark current and high speed chracteristics. The detector using Cr/Au schottky metal fingers with 4um spacing on a large active area of 300*300um$^{2}$ offers a low dark current of 38nA at 10V, a low capacitance of 0.8pF, and a high 3-dB bandwidth of 2.4 GHz. To our knowledge, these characteristics are better than any previously published results obtained from large area InGaAs MSM PD's. The RC equivalent model and frequency domain current response model considering transit time were also used to analyze the frequency characteristic of the fabricated device.

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Design of RF Digitally Controlled Ring Oscillator Using Negative-Skewed Delay Scheme (부 스큐 지연을 이용한 초고주파 디지털 제어 링 발진기 설계)

  • Choi, Jae-Hyung;Hwang, In-Seok
    • Proceedings of the IEEK Conference
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    • 2008.06a
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    • pp.439-440
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    • 2008
  • A high-speed DCO is proposed that uses the negative-skewed delay scheme. The DCO consists of a ring of inverters with each PMOS transistor driven from the output of 3 earlier stage through a set of minimum-sized pass-transistors. The digitization of negative-skewed delay is achieved by selecting pass-transistors turned on and digitizing the gate voltages of the selected pass-transistors. The proposed 7-stage DCO has been simulated using 1.8V, $0.18\;{\mu}m$ TSMC CMOS process to obtain a resolution of 3ps and an operation range of 2.88-5.03GHz.

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Low Phase Noise LC-VCO with Active Source Degeneration

  • Nguyen, D.B. Yen;Ko, Young-Hun;Yun, Seok-Ju;Han, Seok-Kyun;Lee, Sang-Gug
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.13 no.3
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    • pp.207-212
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    • 2013
  • A new CMOS voltage-bias differential LC voltage-controlled oscillator (LC-VCO) with active source degeneration is proposed. The proposed degeneration technique preserves the quality factor of the LC-tank which leads to improvement in phase noise of VCO oscillators. The proposed VCO shows the high figure of merit (FOM) with large tuning range, low power, and small chip size compared to those of conventional voltage-bias differential LC-VCO. The proposed VCO implemented in 0.18-${\mu}m$ CMOS shows the phase noise of -118 dBc/Hz at 1 MHz offset oscillating at 5.03 GHz, tuning range of 12%, occupies 0.15 $mm^2$ of chip area while dissipating 1.44 mW from 0.8 V supply.

A CMOS Frequency Synthesizer Block for MB-OFDM UWB Systems

  • Kim, Chang-Wan;Choi, Sang-Sung;Lee, Sang-Gug
    • ETRI Journal
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    • v.29 no.4
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    • pp.437-444
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    • 2007
  • A CMOS frequency synthesizer block for multi-band orthogonal frequency division multiplexing ultra-wideband systems is proposed. The proposed frequency synthesizer adopts a double-conversion architecture for simplicity and to mitigate spur suppression requirements for out-of-band interferers in 2.4 and 5 GHz bands. Moreover, the frequency synthesizer can consist of the fewest nonlinear components, such as divide-by-Ns and a mixer with the proposed frequency plan, leading to the generation of less spurs. To evaluate the feasibility of the proposed idea, the frequency synthesizer block is implemented in 0.18-${\mu}m$ CMOS technology. The measured sideband suppression ratio is about 32 dBc, and the phase noise is -105 dBc/Hz at an offset of 1 MHz. The fabricated chip consumes 17.6 mA from a 1.8 V supply, and the die-area including pads is $0.9{\times}1.1\;mm^2$.

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A Study on Development of EM Wave Absorbers for Mobile Phones (휴대전화 단말기용 전파흡수체의 개발에 관한 연구)

  • Jung, Jae-Hyun;Kim, Dong-Il
    • Proceedings of the Korean Society of Marine Engineers Conference
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    • 2005.11a
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    • pp.67-68
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    • 2005
  • This thesis is concerned with basic research for development of EM wave absorbers in sheet type for mobile phones. By controlling the sendust ratio, the $Al(OH)_3$ coating, the thickness, the kind of binders, EM wave absorbers were prepared and examined. Centeral frequency shifts toward lower with increasing thickness of the absorber, and absorption ability controlled to adjust Sendust amount. The absorption band of the EM wave absorber coated with $Al(OH)_3$ becomes larger than that of non-coated one. Sendust composite microwave absorbers mixed with CPE were prepared at $70^{\circ}C$ in temperature. The fabricated EM wave absorbers show a reflection coefficient 5.56 dB at 1.8 GHz in thickness of 0.85 mm.

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Bending Fatigue Characteristics of Surface-Antenna-Structure (복합재료 표면안테나 구조의 굽힘 피로특성 연구)

  • 김동현;황운봉;박현철;박위상
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2003.06a
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    • pp.1647-1650
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    • 2003
  • The Objective of this work was to design Surface Antenna Structure (SAS) and investigate fatigue behavior of SAS that was asymmetric sandwich structure. This term, SAS, indicates that structural surface becomes antenna. Constituent materials were selected considering electrical properties, dielectric constant and tangent loss as well as mechanical properties. For the antenna performance, SSFIP elements inserted into structural layers were designed for satellite communication at a resonant frequency of 12.5 GHz and final demonstration article was 16${\times}$8 array antenna. From electrical measurements, it was shown that antenna performances were in good agreement with design requirements. In cyclic 4-point bending, flexure behavior was investigated by static and fatigue test. Fatigue lift curve of SAS was obtained. The fatigue load was determined experimentally at a 0.75(1.875kN) load level. SAS concept is the first serious attempt at integration for both antenna and composite engineers and promises innovative future communication technology.

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CONSTRUCTION OF 21CM COSMIC RADIO ANTENNA (21CM 우주전파 수신용 안테나의 제작)

  • Park, Jong-Ae;Yang, Jong-Man;Han, Seok-Tae;Park, Yong-Seon
    • Publications of The Korean Astronomical Society
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    • v.8 no.1
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    • pp.1-15
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    • 1993
  • We made a pyramidal horn antenna system for 21cm cosmic radio wave. The antenna system has a rectangular waveguide with $TE_{10}$ mode and a copper probe to detect the electromagnetic wave in waveguide. The parameters of the probe are obtained by experiments using two waveguides. Pyramidal horn antenna is designed to get a gain of 20dB. The size of the aperture of this horn is $94cm{\times}74cm$. The beam width of half power is about $14.7^{\circ}$ for the frequency of 1.4GHz. The horn is made of aluminum plate with a thickness of 2mm. The signal from horn and waveguide is amplified in a receiver system and is converted into DC in the detecter. The intensity of the signal is recorded on a chart recorder. We observed the sun using this simple radio telescope and obtained the brightness temperature of $2.2{\times}10^5K$, which indicates that the sun is quiet at 21cm.

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KSRBL 초기운영 관측통계

  • HwangBo, Jung-Eun;Bong, Su-Chan;Cho, Kyung-Suk;Lee, Dae-Young;Park, Young-Deuk
    • The Bulletin of The Korean Astronomical Society
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    • v.35 no.2
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    • pp.47.1-47.1
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    • 2010
  • 태양전파폭발위치관측기(KSRBL)는 단일 안테나 전파분광기로써 미 뉴저지공과대학과의 협력으로 2009년 8월에 한국천문연구원에 개발 설치되었다. 1 MHz 스펙트럼 분해능과 1초의 시간 분해능을 가지고 있고 관측할 수 있는 주파수 대역은 245, 410 MHz 와 0.5-18 GHz에 이르는 광대역이다. 또한 태양 전면 $0.03^{\circ}$ 각거리 안의 오차 범위 내에 태양 폭발 위치를 감지할 수 있다. 전파 관측은 LabVIEW와 IDL 프로그램에 의해 미리 짜여진 관측 스케줄에 따라 매일 자동으로 진행된다. KSRBL 설치 이후 현재까지의 데이터에 대한 관측 통계를 분석 하였다. 관측된 전파폭발의 수를 다른 사이트와 비교하고, 정상 관측 되는 날의 빈도, 기기 오류 발생 빈도, 데이터 안정도 및 손실률 등의 변화양상을 추적하였다.

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