• ETRI Journal
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• v.26 no.3
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• pp.229-240
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• 2004

This paper reports on our development of a dual-mode transceiver for a CMOS high-rate Bluetooth system-onchip solution. The transceiver includes most of the radio building blocks such as an active complex filter, a Gaussian frequency shift keying (GFSK) demodulator, a variable gain amplifier (VGA), a dc offset cancellation circuit, a quadrature local oscillator (LO) generator, and an RF front-end. It is designed for both the normal-rate Bluetooth with an instantaneous bit rate of 1 Mb/s and the high-rate Bluetooth of up to 12 Mb/s. The receiver employs a dualconversion combined with a baseband dual-path architecture for resolving many problems such as flicker noise, dc offset, and power consumption of the dual-mode system. The transceiver requires none of the external image-rejection and intermediate frequency (IF) channel filters by using an LO of 1.6 GHz and the fifth order onchip filters. The chip is fabricated on a $6.5-mm^{2}$ die using a standard $0.25-{\mu}m$ CMOS technology. Experimental results show an in-band image-rejection ratio of 40 dB, an IIP3 of -5 dBm, and a sensitivity of -77 dBm for the Bluetooth mode when the losses from the external components are compensated. It consumes 42 mA in receive ${\pi}/4-diffrential$ quadrature phase-shift keying $({\pi}/4-DQPSK)$ mode of 8 Mb/s, 35 mA in receive GFSK mode of 1 Mb/s, and 32 mA in transmit mode from a 2.5-V supply. These results indicate that the architecture and circuits are adaptable to the implementation of a low-cost, multi-mode, high-speed wireless personal area network.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.6
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• pp.1083-1088
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• 2016

25.8kV GIS part generated by sensors to measure contact an inflow of noise depending on the extent of the measured discharge occurs often not easy. Partial discharge signal measurement sensor suitable for developing a more useful measurements at the scene to this, partial discharge waveform analysis developed a sensor, and to utilize forSensor on the development of the most important is VSWR decided to (voltage standing wave ratio) voltage standing-wave ratio less than 1.5 and decided less than at the full spectrum bands that are measured, this time Return loss, as measured value by absolute criteria 14.0 dB produced the sensor, designed to or more. UHF 1.5~0.5 GHz bandwidth spectrum to be measured in GIS. UHF bands were designed to be able to measure the best signal. Recently, 25.8kV GIS production company has been increasing variety of GIS were made open spacer in partial discharge in accordance with the not very easy to detect the signal. The sensor is designed height of four cm external spacer is attachment GIS in an influx of outside noise measurement, and be so manufactured as to facilitate the least we've done. Also, since partial discharge which occur can measure the frequency of the 170kV GIS external partial-discharge signals that occur at the scene of insulation applied to the spacer. Features, and also derived good results using global positioning. Also measured discharge point about sensors that are stable and the reliability of the development and local substation equipment failure occurring signal analysis through the discharge for the prevention of widely. There should be to believe that used.

• Journal of electromagnetic engineering and science
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• v.12 no.1
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• pp.20-25
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• 2012

In this paper, the EM wave absorber for ETC system was designed and fabricated. We fabricated several samples in different composition ratios of flaked sendust and CPE(Chlorinated Polyethylene). Absorption abilities were simulated in accordance with different thicknesses of the prepared absorbers and changed complex relative permittivity and permeability according to composition ratio. The optimized mixing ratio of flaked sendust and CPE was found as 60 : 40 wt.% by experiments and simulation. Then the EM wave absorber was fabricated and tested using the simulated data. As a result, the developed EM wave absorber has the thickness of 2.75 mm and absorption ability was 22.5 dB in the case of normal incidence at 5.8 GHz. Therefore, it was confirmed that the newly developed absorber can be used for ETC system.

• Transactions on Electrical and Electronic Materials
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• v.17 no.5
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• pp.257-260
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• 2016

In this paper, two configurations (T-type and Y-type) of dual band Wilkinson Power Divider based upon Hilbert curves are presented. Formerly, the concept of Hilbert Curves was implemented in only designing microstrip antennas. In power dividers, this is the very first attempt of incorporating them for size reduction. In addition to this, an effect of inculcation of high-dielectric constant layer (Hafnium-oxide, HfO₂, ε_r= 25) between a substrate and top metallization in both configurations was investigated. The proposed configurations are designed on a high resistive silicon substrate (HRS) for L and S bands with resonating frequencies of 1.575 and 3.4 GHz. Both configurations have return loss that is better than 20 dB and an insertion loss of around 6 dB; isolation better than 30 dB was achieved for both models.

• ETRI Journal
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• v.25 no.5
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• pp.407-411
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• 2003

A dielectric superstrate layer above a microstrip patch antenna has remarkable effects on its gain and resonant characteristics. This paper experimentally investigates the effect of a superstrate layer for high gain on microstrip patch antennas. We measured the gain of antennas with and without a superstrate and found that the gain of a single patch with a superstrate was enhanced by about 4 dBi over the one without a superstrate at 12 GHz. The impedance bandwidths of a single patch with and without a superstrate for VSWR < 2 were above 11%. The designed $2{\times}8$ array antenna using a superstrate had a high gain of over 22.5 dB and a wide impedance bandwidth of over 17%.

• Journal of the Optical Society of Korea
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• v.18 no.5
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• pp.589-593
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• 2014

Terahertz (THz) communication has important applications in high-speed and ultra broadband wireless access networks. The THz modulator is one of the key devices in a THz communications system. Wavelength division multiplexing (WDM) can expand the capacity of THz communications systems, so research on multi wavelength THz modulators has significant value. By combining photonic-crystal and THz technology, a novel type of multi wavelength THz modulator based on a triple-lattice photonic crystal is proposed in this paper. Compared to a compound-lattice photonic crystal, a triple-lattice photonic crystal has a larger gap width of 0.196. Simulation results show that six beams of THz waves can be modulated simultaneously with high performance. This modulator's extinction ratio is as large as 34.25 dB, its insertion loss is as low as 0.147 dB, and its modulation rate is 2.35 GHz.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.15 no.2
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• pp.147-154
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• 1990

A 4:1 Time Division Multiplexer(MUX) had been designed in using GaAs Source Coupled FET Logic(SCFL), Designed Multiplexer uses a time division frequency divider and two stage of singnal combining 2:1 multiplexer. The performance of the multiplexer is verified by PSPICE simulation. Designed circuit operates up to 12.5Gbit/s with a power dissipation of 192mW. These performance are more advanced than other reported multiplexer in the speed and power dissipation.

• Information and Communications Magazine
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• v.25 no.2
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• pp.41-46
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• 2008

무선 캡슐형 내시경 시스템 설계를 위하여 인체내부에서 표면까지의 전송손실을 $0.001{\sim}2$ GHz대역에 대하여 분석하였다. 실제 인체구조 모델에 안테나를 적용하여 계산결과를 얻은 기존 연구와 달리 인체내 매질의 평균적 특성을 갖는 균일 매질로 가정하여 안테나의 Q와 효율을 계산하였다. 계산 결과 40MHz의 HPBW(Half-Power Bandwidth), 5mm반경 크기의 송신안테나, 15un거리에 대하여 $400{\sim}600$MHz 사이에서 -58dB가량의 최적 손실이 예상되었다. 분석된 손실 결과를 바탕으로 450MHz에서 무선 캡슐형 내시경 시스템이 설계 및 제작되었고 실제 유사매질용액에서 실험결과 15cm/10cm거리에서 -62/-5ldB의 손실을 보였으며 동물실험에서는 돼지 체내외간 10cm가량의 거리에 대해 약 -56dB의 손실이 측정되었다.

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.5
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• pp.128-132
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• 2017

In this thesis, a BPF(band-pass filter) at the center frequency of 2.14GHz, and bandwidth of 20MHz is designed and implemented using high Q dielectric resonators with ${\varepsilon}_r=38$. The DR(dielectric resonator) is resonated by $TE_{01{\delta}}$-mode and it has a hole in the center of DR. The BPF consists of 6-poles dielectric resonators and the characteristic of elliptic function is obtained by non-adjacent coupling. It has the average insertion loss of 0.97dB and the return loss over 25dB in its passband. In this thesis, the frequency selectivity is more improved by the coupling characteristics between non-adjacent resonators than that of dielectric resonator filters with a Chebyshev response.

• Journal of Powder Materials
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• v.25 no.5
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• pp.375-378
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• 2018

Conductive and dielectric SiC are fabricated using electroless plating of Ni-Fe films on SiC chopped fibers to obtain lightweight and high-strength microwave absorbers. The electroless plating of Ni-Fe films is achieved using a two-step process of surface sensitizing and metal plating. The complex permeability and permittivity are measured for the composite specimens with the metalized SiC chopped fibers dispersed in a silicone rubber matrix. The original non-coated SiC fibers exhibit considerable dielectric losses. The complex permeability spectrum does not change significantly with the Ni-Fe coating. Moreover, dielectric constant is sensitively increased with Ni-Fe coating, owing to the increase of the space charge polarization. The improvements in absorption capability (lower reflection loss and small matching thickness) are evident with Ni-Fe coating on SiC fibers. For the composite SiC fibers coated with Ni-Fe thin films, a -35 dB reflection loss is predicted at 7.6 GHz with a matching thickness of 4 mm.