• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.7 no.2
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• pp.13-25
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• 2008

In this paper, we propose the Location Awareness System adjusting Ranging Technology for CSS(Chirp Spread Spectrum) which is adopted on 2.45GHz standard in IEEE 802.15.4a and TOA(Time-of-Arrival) algorithm. The conventional methods have adopted RSSI, ultrasonic waves and infrared rays in Zigbee. RSSI measures strength indication of received signal and recognizes the position of nodes in RF boundary. However, this technology has the following problems; lots of error by the change of the channel environment and much power consumption. In this paper, adopting chirp pulse on 2.45GHz standard in IEEE 802.15.4a and SDS-TWR(Symmetrical Double Side-Two Way Ranging) method using the characteristic of Spread Spectrum, a new Location Awareness System is suggested. The distance and the coordinate are measured within ${\pm}\;5cm$ by TOA(Time of Arrival) algorithm and proposed algorithm and the data in error rate is decreased less than 1%. Through these results, the algorithm suggested in this paper is verified for its performance in a computer simulation.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.2
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• pp.301-306
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• 2015

An ultra-compact and wideband low noise amplifier (LNA) in a quad flat non-leaded (QFN) package is presented. The LNA monolithic microwave integrated circuit (MMIC) is implemented in a $0.25{\mu}m$ GaN IC technology on a Silicon Carbide (SiC) substrate provided by Triquint. A source degeneration inductor and a gate inductor are used to obtain the noise and input matching simultaneously. The resistive feedback and inductor peaking techniques are employed to achieve a wideband characteristic. The LNA chip is mounted in the $3{\times}3-mm^2$ QFN package and measured. The supply voltages for the first and second stages are 14 V and 7 V, respectively, and the total current is 70 mA. The highest gain is 13.5 dB around the mid-band, and -3 dB frequencies are observed at 0.7 and 12 GHz. Input and output return losses ($S_{11}$ and $S_{22}$) of less than -10 dB measure from 1 to 12 GHz; there is an absolute bandwidth of 11 GHz and a fractional bandwidth of 169%. Across the bandwidth, the noise figures (NFs) are between 3 and 5 dB, while the output-referred third-order intercept points (OIP3s) are between 26 and 28 dBm. The overall chip size with all bonding pads is $1.1{\times}0.9mm^2$. To the best of our knowledge, this LNA shows the best figure-of-merit (FoM) compared with other published GaN LNAs with the same gate length.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.12
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• pp.51-59
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• 1993

A 4${\times}10^{19}cm^{3}$ carbon-doped base AlGaAs/GaAs HBY was grown using carbontetracholoride(CCl$_4$) by atmospheric pressure MOCVD. Abruptness of emitter-base junction was characterized by SIMS(secondary ion mass spectorscopy) and the doping concentration of base layer was confirmed by DXRD(double crystal X-ray diffractometry). Mesa-type HBTs were fabricated using wet etching and lift-off technique. The base sheet resistance of R$_{sheet}$=550${\Omega}$/square was measured using TLM(transmission line model) method. The fabricated transistor achieved a collector-base junction breakdown voltage of BV$_{CBO}$=25V and a critical collector current density of J$_{O}$=40kA/cm$^2$ at V$_{CE}$=2V. The 50$\times$100$\mu$$^2$ emitter transistor showed a common emitter DC current gain of h$_{FE}$=30 at a collector current density of JS1CT=5kA/cm$^2$ and a base current ideality factor of ηS1EBT=1.4. The high frequency characterization of 5$\times$50$\mu$m$^2$ emitter transistor was carried out by on-wafer S-parameter measurement at 0.1~18.1GHz. Current gain cutoff frequency of f$_{T}$=27GHz and maximum oscillation frequency of f$_{max}$=16GHz were obtained from the measured Sparameter and device parameters of small-signal lumped-element equivalent network were extracted using Libra software. The fabricated HBT was proved to be useful to high speed and power spplications.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.11
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• pp.2697-2702
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• 2014

In this paper, we demonstrated a Ku-band 2W MMIC power amplifier for satellite communication applications. The device technology used relies on $0.25{\mu}m$ GaAs pseudomorphic high electron mobility transistor (PHEMT) of Wireless Information Networking (WIN) Semiconductor foundry. The 2W MMIC power amplifier has gain of over 29 dB and saturation output power of over 33.4 dBm in the frequency range of 13.75 ~ 14.5 GHz. Power added efficiency (PAE) is a 29 %. To our knowledge, this is the highest power added efficiency reported for any commercial GaAs-based 2W MMIC power amplifier in the Ku-band.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.7
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• pp.1208-1212
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• 2008

In this study, both structural and microwave dielectric properties of the $Ba_5B_4O_{15}$ (B=Ta, Nb) cation-deficient perovskite ceramics with sintering temperature were investigated. All samples of the $Ba_5B_4O_{15}$ (B=Ta, Nb) ceramics were prepared by the conventional mixed oxide method and sintered at $1325^{\circ}C{\sim}1575^{\circ}C$. The bulk density and dielectric constant of the $Ba_5Ta_4O_{15}$ ceramics were increased continuously with increasing of sintering temperature. The quality factor of the $Ba_5Ta_4O_{15}$ ceramics was increased in as the sintering temperature increases from $1375^{\circ}C{\sim}1475^{\circ}C$ but decreased at the temperatures above $1475^{\circ}C$. And the bulk density, dielectric constant and quality factor of the $Ba_5Nb_4O_{15}$ ceramics were increased in as the sintering temperature increases from $1325^{\circ}CP{\sim}1400^{\circ}C$ but decreased at the temperatures above $1400^{\circ}C$. In the case of the $Ba_5Ta_4O_{15}$ sintered at $1475^{\circ}C$ and $Ba_5Nb_4O_{15}$ ceramics sintered at $1400^{\circ}C$, the dielectric constant, quality factor, and temperature coefficient of the resonant frequency (TCRF) were 25.15, 53,105 GHz, -3.06 $ppm/^{\circ}C$ and 39.55, 28,052 GHz, +5.7 ppm/$^{\circ}C$, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.3
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• pp.335-342
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• 2012

A high-isolation Ka-band WR-28 waveguide power combiner is designed and implemented using a resistive septum. The waveguide power combiner developed here is an E-plane T-junction type with a TaN resistive septum inserted in a slit of waveguide junction. The fabricated waveguide power combiner shows a return loss better than -20 dB and an insertion loss less than 0.1 dB. Also the measurement shows isolation levels of 20 dB or more almost all over the band and in particular 25 dB or more below 37 GHz. The amplitude and phase imbalance are measured to be less than 0.1 dB and $2.5^{\circ}$, respectively.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.4
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• pp.747-752
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• 2009

In this paper, the MIMO(Multi-Input Multi-Output) channel characteristics for Rx antenna spacing are described in the real environment, which has LOS(Ling of Sight) and NLOS (Won-Line of Sight). We developed $2\times2$ MIMO channel measurement system at 2.3GHz Wibro Band. MIMO antenna evaluation parameters such as received power, channel capacity and spatial correlation are evaluated for standard dipole antenna with 0.25, 0.5, 0.75 and 1.0 wavelength spacing at 2-position for LOS and 4-position for NLOS. The spatial correlation is distributed more than 0.9 in most LOS case which might be intricate to operate MIMO communication. MIMO antenna design need to be focused on getting spatial diversity and reducing spatial correlation in LOS case.

• Journal of Advanced Navigation Technology
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• v.10 no.1
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• pp.13-19
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• 2006

In this paper, Gaussian impulse generator for DS-UWB was proposed and fabricated so that the frequency band allocated to WLAN, around 5 GHz, was suppressed in accordance with the regulation of radiation spectrum limitation defined by FCC. In order to transform an unipolar rectangular signal to a Gaussian impulse, the proposed impulse generator consists of two stage impulse generation parts; the first stage using dual SRD and the second stage using gain switching of semiconductor laser diode. The result shows a gaussian impulse as narrow as 180 psec in width. In addition, high order derivative Gaussian filter with a structure of 4 stage ring resonators was designed and fabricated so that DS-UWB impulse generator could reduce the frequency spectrum of WLAN by 25 dB compared to the spectral power of th adjacent UWB band.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.9
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• pp.783-789
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• 2015

This paper presents a Doherty power amplifier(DPA) operating in the 2.6 GHz band for long term evolution(LTE) systems. In order to achieve high efficiency, second and third harmonic impedances are controlled using a compact output matching network. The DPA was implemented using a gallium nitride high electron mobility transistor(GaN-HEMT) that has many advantages, such as high power density and high efficiency. The implemented DPA was measured using an LTE downlink signal with a 10 MHz bandwidth and 6.5 dB PAPR. The implemented DPA exhibited a gain of 13.1 dB, a power-added efficiency(PAE) of 57.6 %, and an ACLR of -25.7 dBc at an average output power of 33.4 dBm.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.9
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• pp.1023-1029
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• 2010

In this paper, we proposed the broadband polarization diversity antenna operating in the PCS, WCDMA and WiBro band for mobile base station. We designed the antenna using the dipole antenna of the square loop type and microstrip feeding structure. Additionally, we used the choke box to remove the distortion of radiation patterns by the reflector structure when operating broadband. The simulation was performed using MWS in a commercial tool of CST company and the antenna was fabricated on a teflon substrate with 3.33 of the relative permittivity. The proposed antenna has the bandwidth of 640 MHz(from 1.75 to 2.39 GHz) when VSWR is below 1.5. At the operating bands, the interisolation between the cross-pair radiators is less than -25 dB and the maximum gains for PCS, WCDMA and WiBro band are 8.9, 8.2 and 8.6 dBi, respectively.