• Title/Summary/Keyword: 4F Process

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Study on Recovery of Separated Hydrofluoric Acid, Nitric Acid and Acetic Acid Respectively from Mixed Waste Acid Produced during Semiconductor Wafer Process (반도체 웨이퍼 제조공정(製造工程) 중 발생혼합폐산(發生混合廢酸)으로부터 불산, 질산 및 초산의 각 산 회수(回收)에 관한 연구(硏究))

  • Kim, Ju-Yup;Kim, Hyun-Sang;Bae, Woo-Keun
    • Resources Recycling
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    • v.18 no.4
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    • pp.62-69
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    • 2009
  • We researched separation of mixed waste acids with HF, $CH_3COOH$, $HNO_3$ that were produced during a semiconductor wafer process to recycle these acids. At first, we manufactured the fluoride compound in form of $Na_2SiF_6$ by precipitating HF using $NaNO_3$ and Si powder. The concentration of HF was reduced from the initial concentration of 127 g/L to 0.5 g/L with an HF recovery ratio of 99.5%. After the manufacture of $Na_2SiF_6$, the concentration of $HNO_3$ and $CH_3COOH$ demonstrated 502 g/L and 117 g/L respectively. Following these findings we added NaOH in this $CH_3COOH/HNO_3$ mixed acid in order to obtain pH=4. Next we separated the $CH_3COOH$ and recoverd it through the use of vaccum evaporation at -440 mmHg, $95^{\circ}C$. The concentration of the recovered $CH_3COOH$ was approximately 15% and the recovery ratio of $CH_3COOH$ was over 85%. We precipitated the $NaNO_3$ by cooling the concentrated solution to $20^{\circ}C$ with a $HNO_3$ recovery ratio of over 93%. We confirmed that only $Na_2SiF_6$ and $NaNO_3$ were manufactured by XRD analysis after drying these precipitants at $90^{\circ}C$. The precipitants demonstrated a purity of approximately 97% and 98% respectively. Therefore, the purity of the precipitants proved to be similar to that of commercial products.

Effect of Impurity Addition on the Microwave Dielectric Properties of $(Ba_{0.93}Sr_{0.07}O)-0.5Sm_2O_3-4.5TiO_2$ Ceramics ($(Ba_{0.93}Sr_{0.07}O)-0.5Sm_2O_3-4.5TiO_2$계 세라믹스의 불순물 첨가에 따른 마이크로파 유전특성)

  • Kim, Tae-Joong;Jang, Jae-Hoon;Lee, Hee-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07b
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    • pp.1148-1151
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    • 2002
  • Dielectric ceramics with nominal composition of $(Ba_{0.93}Sr_{0.07}O)-0.5Sm_2O_3-4.5TiO_2$ was prepared using the conventional mixed oxide process-derived powder. Effect of $SiO_2$, $MnO_2$ and $Al_2O_3$ impurity addition on the microwave properties was examined in some detail. Measured relative permittivity $(\varepsilon_r)$ values were in the range of 53 to 59 and showed little dependence on impurity addition. In contrast, quality factor $(Q{\cdot}f)$ and temperature coefficient of resonant frequency $(\tau_f)$ values were greatly influenced by the type and the amount of impurities. It was found that 0.1~0.2wt% addition of $Al_2O_3$ was most effective for improving the properties, where ${\varepsilon}_r$, $Q{\cdot}f$ and $\tau_f$ values were 57.7, 10000, and +7ppm/$^{\circ}C$, respectively.

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The Nitrogen Removal of Municipal Wastewater with HRT using CNR Process (CNR공법의 체류시간에 따른 도시하수의 질소제거)

  • 김영규;양익배;김인배
    • Journal of Environmental Health Sciences
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    • v.26 no.3
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    • pp.98-102
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    • 2000
  • The aim of this study was to evaluate on the removal effect of total nitrogen in municipal wastewater by decreasing hydraulic retention time(HRT) from 6 hour to 4 hour on CNR process. CNR-A(Cilia Nutrient Removal) is the process combining A2/O process with cilium media of H2L corporation. The removal efficiencies for T-N were 63.1% in A-1 reactor, and 73.5% in A-2 reactor and 77.0% in A-3 reactor. The specific nitrification(g-NH3-N/g-MLVSS.d) of Oxic in CNR-A process was 0.07-0.32. The specific denitrification in Anoxic and the specific nitrification inOxic was higher in HRT 4 hour because of optimum F/M ratio.

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Fabrication of Microwire Arrays for Enhanced Light Trapping Efficiency Using Deep Reactive Ion Etching

  • Hwang, In-Chan;Seo, Gwan-Yong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.454-454
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    • 2014
  • Silicon microwire array is one of the promising platforms as a means for developing highly efficient solar cells thanks to the enhanced light trapping efficiency. Among the various fabrication methods of microstructures, deep reactive ion etching (DRIE) process has been extensively used in fabrication of high aspect ratio microwire arrays. In this presentation, we show precisely controlled Si microwire arrays by tuning the DRIE process conditions. A periodic microdisk arrays were patterned on 4-inch Si wafer (p-type, $1{\sim}10{\Omega}cm$) using photolithography. After developing the pattern, 150-nm-thick Al was deposited and lifted-off to leave Al microdisk arrays on the starting Si wafer. Periodic Al microdisk arrays (diameter of $2{\mu}m$ and periodic distance of $2{\mu}m$) were used as an etch mask. A DRIE process (Tegal 200) is used for anisotropic deep silicon etching at room temperature. During the process, $SF_6$ and $C_4F_8$ gases were used for the etching and surface passivation, respectively. The length and shape of microwire arrays were controlled by etching time and $SF_6/C_4F_8$ ratio. By adjusting $SF_6/C_4F_8$ gas ratio, the shape of Si microwire can be controlled, resulting in the formation of tapered or vertical microwires. After DRIE process, the residual polymer and etching damage on the surface of the microwires were removed using piranha solution ($H_2SO_4:H_2O_2=4:1$) followed by thermal oxidation ($900^{\circ}C$, 40 min). The oxide layer formed through the thermal oxidation was etched by diluted hydrofluoric acid (1 wt% HF). The surface morphology of a Si microwire arrays was characterized by field-emission scanning electron microscopy (FE-SEM, Hitachi S-4800). Optical reflection measurements were performed over 300~1100 nm wavelengths using a UV-Vis/NIR spectrophotometer (Cary 5000, Agilent) in which a 60 mm integrating sphere (Labsphere) is equipped to account for total light (diffuse and specular) reflected from the samples. The total reflection by the microwire arrays sample was reduced from 20 % to 10 % of the incident light over the visible region when the length of the microwire was increased from $10{\mu}m$ to $30{\mu}m$.

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Large-Scale PSA Process for Hydrogen Separation from Gas Mixture (혼합가스에서 수소분리를 위한 애용량 PSA공정)

  • Choi, Dae-Ki;Jin, Yin-Zhe;Kang, Seok-Hyun;Row, Kyung-Ho
    • Transactions of the Korean hydrogen and new energy society
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    • v.17 no.1
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    • pp.8-20
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    • 2006
  • For large scale separation hydrogen from different mixing ratio(60/40 and 80/20 vol.%) of hydrogen and methane $1Nm^3/hr$ and $4Nm^3/hr$ 2bed-6step pressure swing adsorption(PSA) process was used, respectively. The effects of the feed gas pressure, adsorption time, the feed flow rate and the P/F(purge to feed) ratio on the process performance were evaluated. In the $1Nm^3/hr$ PSA results, 11 atm adsorption pressure and 0.10 P/F ratio might be optimal values to obtain more than 75 % recovery and 99 % purity hydrogen in these processing. The optimum feed flowrate was 22 LPM and 17 LPM in the ratio 60/40 and 80/20, respectively. In the $4Nm^3/hr$ PSA results, 10 atm adsorption pressure might be simulated values to obtain more than 80 % recovery and 99 % purity hydrogen in these processing.

Characteristics of Tantalum Powder by Conditions of After Treatment (후처리 조건에 따른 탄탈륨 분말의 특성)

  • 윤재식;박형호;배인성;김병일
    • Journal of Powder Materials
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    • v.10 no.5
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    • pp.344-347
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    • 2003
  • Pure tantalum powder has been produced by combining Na as a reducing agent, $K_2$TaF$_{7}$ as feed material, KCl and KF as a diluent in a stainless steel (SUS) bomb, using the method of metallothermic reduction. And we examined various types of after-treatment that affect the high purification of powder. A significant amount of impurities contained in recovered powder was removed in various conditions of acid washing. In particular, 20% (HCl + HNO$_3$) was effective in removing heavy metal impurities such as Fe, Cr and Ni, 8% H$_2$SO$_4$ + 8% $Al_2$(SO$_4$)$_3$ in removing fluorides such as K and F from non-reactive feed material, and 2% $H_2O$$_2$ + 1 % HF in removing oxides that formed during reaction. Significant amounts of oxygen and part of light metal impurities could be removed through deoxidation and heat treatment process. On the other hand, because it is difficult to remove completely heavy metal impurities such as Fe, Cr, and Ni through acid washing or heat treatment process if their contents are too high, it is considered desirable to inhibit these impurities from being mixed during the reduction process as much as possible.

Estimation of Fatigue Integrity for Small Aircraft Engine Mount Strut (소형 항공기 엔진 마운트 구조물의 피로 건전성 평가)

  • Lee, Mu-Hyoung;Park, Ill-Kyoung;Kim, Sung-Joon;Ahn, Seok-Min
    • Journal of the Korean Society for Aviation and Aeronautics
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    • v.19 no.4
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    • pp.58-66
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    • 2011
  • The estimation of fatigue integrity is very important for aerospace structures such as engine mount strut. The reason is that the fatigue integrity is essential analysis process to establish the structural stability in aerospace field. Therefore, in this paper, the process of fatigue analysis and test was performed for engine mount strut to prove the structural fatigue integrity. First of all, the fatigue load spectrum is constructed by considering the small aircraft operating condition. Fatigue analysis is done for the cluster near the welding zone which may have F.C.L.(fracture critical location). The fatigue life of engine mount strut was estimated by the Miner's rule which is the damage summation method. Finally, Fatigue test is performed to verify the fatigue integrity. The estimation process of fatigue integrity for engine mount strut of small aircraft may help the design.

Enhanced fT and fMAX SiGe BiCMOS Process and Wideband Power Efficient Medium Power Amplifier

  • Bae, Hyun-Cheol;Oh, Seung-Hyeub
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.8 no.3
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    • pp.232-238
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    • 2008
  • In this paper, a wideband power efficient 2.2 GHz - 4.9 GHz Medium Power Amplifier (MPA), has been designed and fabricated using $0.8{\mu}m$ SiGe BiCMOS process technology. Passive elements such as parallel-branch spiral inductor, metal-insulator-metal (MIM) capacitor and three types of resistors are all integrated in this process. This MPA is a two stage amplifier with all matching components and bias circuits integrated on-chip. A P1dB of 17.7 dBm has been measured with a power gain of 8.7 dB at 3.4 GHz with a total current consumption of 30 mA from a 3 V supply voltage at $25^{\circ}C$. The measured 3 dB bandwidth is 2.7 GHz and the maximum Power Added Efficiency (PAE) is 41 %, which are very good results for a fully integrated Medium PA. The fabricated circuit occupies a die area of $1.7mm{\times}0.8mm$.

Aliphatic radiofluorination using TBAHCO3 eluate in hydrous organic medium

  • Kwon, Young-Do;Son, Jeongmin;Chun, Joong-Hyun
    • Journal of Radiopharmaceuticals and Molecular Probes
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    • v.4 no.2
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    • pp.51-56
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    • 2018
  • Azeotropic drying process is routinely applied to enhance nucleophilicity of $[^{18}F]$fluoride ion during the nucleophilic production of PET radiotracers; however, the drying process requires usually 15-25 min. Due to the high demand of employing fluorine-18 ($t_{1/2}=109.8min$) in PET radiopharmaceutical production, several research groups have focused on the method development, obviating tedious removal process of the residual target water ($[^{18}O]H_2O$) for $[^{18}F]$fluoride ion complex to be used in radiofluorination. Some development in radiofluorination in a mixed organic solvent system was demonstrated with various aliphatic substrates, but only kryptand as a phase transfer agent was utilized in the reported method. Here, we extend to investigate the development scope of applicability with basic alkyl ammonium salt as a phase transfer agent through the extensive elution efficiency study and radiofluorination outcome for aliphatic radiofluorination.