• 디지털콘텐츠학회 논문지
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• 제19권6호
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• pp.1131-1144
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• 2018

본 연구는 최근에 개발된 게이미피케이션 개발 방법론 중 하나인 4F 프로세스 제안이 목적이다. 4F 프로세스의 효과성을 분석하기 위해, 게임과 게이미피케이션 관련 이론을 적용했고, 기존에 개발된 개발 방법론과의 비교 분석을 실시했다. 연구결과에 따르면, 본 연구진이 찾은 8개의 방법론보다 4F 프로세스가 비교적 높은 완성도를 가진 방법론임을 입증했다. 하지만 4F 프로세스에도 보완점은 존재했다. 본 연구결과를 바탕으로 4F 프로세스의 장단점에 대해 언급하고, 게이미피케이션 개발 방법론에 필요한 요소로 단계별 가이드라인 제시에 대해 제언했다.

• 한국과학교육학회지
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• 제26권4호
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• pp.568-580
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• 2006

이 연구에서는 예비교사들이 생물학 가설을 생성함때 나타나는 4가지 감성 생성 유형을 fMRI 이용하여 객관적이고 실증적인 두뇌 활동에 대한 정보를 조사하였다. 연구를 위해 과학교육을 전공하는 건강한 여자 대학생 10명을 대상으로 3.0T scanner를 사용하여 492초 동안 두뇌 영상을 측정하였다. 측정한 후 언어적 보고 자료를 수집하여 fMRI 영상 자료의 신뢰도를 확보하였다 언어적 보고의 분석 결과 BGP RGP에서는 10명의 피험자가 CGP와 AGP에서는 8명의 피힘자가 유의미한 과학적 감성을 생성하였다. 이들 피험자를 대상으로 SPM2 프로그램을 사용하여 fMRI 영상 자료를 통계 처리하였다. 그 결과 GPSE의 4개 유형별로 독특한 두뇌 활성화 영역들이 나타났다. 이러한 결과는 인지심리학적으로 규명된 4개의 감성 생성 과정이 두뇌에 실제로 존재한다는 것을 경생리학적으로 규명하였다는데 그 의의가 있다. 또한 과학교육에서 fMRI를 활용한 새로운 연구방법의 확립과 사례 연구를 제시하였다는데 큰 가치가 있다. 그리고 생물학가설 생성과정의 총체적 이해에 도움이될 것이다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.284-284
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• 2011

Recently, the increasing degree of device integration in the fabrication of Si semiconductor devices, etching processes of nano-scale materials and high aspect-ratio (HAR) structures become more important. Due to this reason, etch selectivity control during etching of HAR contact holes and trenches is very important. In this study, The etch selectivity and etch rate of TEOS oxide layer using ACL (amorphous carbon layer) mask are investigated various process parameters in CH2F2/C4F8/O2/Ar plasma during etching TEOS oxide layer using ArF/BARC/SiOx/ACL multilevel resist (MLR) structures. The deformation and etch characteristics of TEOS oxide layer using ACL hard mask was investigated in a dual-frequency superimposed capacitively coupled plasma (DFS-CCP) etcher by different fHF/ fLF combinations by varying the CH2F2/ C4F8 gas flow ratio plasmas. The etch characteristics were measured by on scanning electron microscopy (SEM) And X-ray photoelectron spectroscopy (XPS) analyses and Fourier transform infrared spectroscopy (FT-IR). A process window for very high selective etching of TEOS oxide using ACL mask could be determined by controlling the process parameters and in turn degree of polymerization. Mechanisms for high etch selectivity will discussed in detail.

• 한국표면공학회지
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• 제39권3호
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• pp.137-141
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• 2006

Process window for infinite etch selectivity of silicon nitride $(Si_3N_4)$ layers to ArF photoresist (PR) was investigated in dual frequency superimposed capacitive coupled plasma (DFS-CCP) by varying the process parameters such as low frequency power $(P_{LF})$, $CH_2F_2$ and $H_2$ flow rate in $CH_2F_2/H_2/Ar$ plasma. It was found that infinite etch selectivities of $Si_3N_4$ layers to the ArF PR on both blanket and patterned wafers can be obtained for certain gas flow conditions. The etch selectivity was increased to the infinite values as the $CH_2F_2$ flow rate increases, while it was decreased from the infinite etch selectivity as the $H_2$ flow rate increased. The preferential chemical reaction of the hydrogen with the carbon in the polymer film and the nitrogen on the $Si_3N_4$ surface leading to the formation of HCN etch by-products results in a thinner steady-state polymer and, in turn, to continuous $Si_3N_4$ etching, due to enhanced $SiF_4$ formation, while the polymer was deposited on the ArF photoresist surface.

• Bulletin of the Korean Chemical Society
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• 제33권7호
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• pp.2315-2319
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• 2012

To improve the performance of $LiFePO_4F$, a novel sol-gel process is developed. For comparison, ceramic process is also implemented. From X-ray diffraction results we know that each sample adopts a triclinic $P{\bar{1}}$ space group, and they are isostructural with amblygonite and tavorite. The scanning electron microscope images show that the homogeneous grains with the dimension of 300-500 nm is obtained by the sol-gel process; meanwhile the sample particles obtained by ceramic process are as big as 1000-3000 nm. By galvanostatic tests and at electrochemical impedance spectroscopy method, the sample obtained by sol-gel process presents better electrochemical properties than the one obtained by ceramic process.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.266-266
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• 2013

We show a set-up of poly (4,4'-aminotriphenylene hexafluoroisopropylidenediphthalimide) (6F-TPA PI)/Al sample in which holes are injected by photoelectron emission process instead of direct charge carrier injection via metal electrode. In this process, an irreversible electrical phase transition of 6F-TPA PI is found in contrast to the Al/6F-TPA PI/Al structure, leading to a write-once-readmany behavior. The photoelectron spectroscopy results measured before and after the switching process revealed that the irreversible electrical phase transition of 6F-TPA PI is attributed to the chemical modification of the carbonyl group in phthalimide moiety.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.244-244
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• 2012

Polymer memory devices have attracted considerable attention because of their advantages such as low cost potential, good scalability, flexibility, simplicity in structure, and large capacity for data storage. Metal/poly (4,4'-aminotriphenylene hexafluoroisopropylidenediphthalimide) (6F-TPA PI)/metal system has been found to show an electrical bi-stable behavior. Here, we show a novel set-up of 6F-TPA PI/Al sample in which holes are injected by photoelectron emission process instead of direct charge carrier injection via metal electrode. In this process, an irreversible electrical phase transition of 6F-TPA PI is found, leading to a write-once-read-many (WORM) behavior. The photoelectron spectroscopy results measured before and after the switching process revealed that the irreversible electrical phase transition of 6F-TPA PI is attributed to the chemical modification of the carbonyl group in phthalimide moiety.

• 설비공학논문집
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• 제23권4호
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• pp.281-286
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• 2011

The objective of this study is to optimize the four-bed six-step pressure swing adsorption(PSA) process for high purity $CH_4$ recovery from the biogas. The effects of P/F(purge to feed) ratio and cycle time on the process performance were evaluated. The cyclic steady-states of PSA process were reached after 12 cycles. The purity and recovery rate of product gas, pressure and temperature changes were constant as the cycle repeated. It was shown that the P/F ratio gave significant effect on the product recovery rate by increasing the amount of purge gas in purge and regeneration step. The optimal P/F ratio was found to be 0.08. As the cycle time increased, the product purity decreased by increasing the feed gas flow rate. It was found that the optimal operating conditions were P/F ratio of 0.08 and total cycle time of 1,440 seconds with the purity of 97%.

• 동아시아식생활학회지
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• 제15권4호
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• pp.475-482
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• 2005

As Korea has approached the aging society, older Koreans have become an important force in restaurant sales today. To succeed with this silver market, it is important for restaurant managers to know who they are and which factor influence the older Koreans' eating-out decision making process. The purpose of this study was to investigate the effect of the elderly consumers financial independency on restaurant selection process. Data were collected from 178 older consumers above 55 years old and analyzed using the descriptive statistic analysis, MANOVA, and one-way ANOVA. The results showed that the elderly consumers financial independency significantly influenced the decision making process in determining where they eat out Significant differences were found between high income group and low income group in the Problem Recognition Step(Wilks' Lambda=0.776, F=3.796), Information Search Step(Wilks' Lambda=0.779, F=2.959), Alternative Evaluation Step (I :Wilks' Lambda=0.835, F=1.748/ II :Wilks' Lambda=0.764, F=3.212), and Purchase Decision Step(Wilks' Lambda=0.849, F=2.412), except the Post-Purchase Behavior(Wilks' Lambda=0.933, F=1.179). The more financially independent older consumers were, the more directly they were involved in the eating out decision making process. Older consumers with higher income and more personal property were likely to 'propose to eat out by themselves'(F=10.986), to obtain restaurant information from the 'printed materials'(F=9.707), to consider 'convenient location' as most important factor when they eat out(F=5.594), and to go to 'family restaurant'(F=7.067), 'Japanese restaurant'(F=7.391) and 'fine dining restaurants'(F-=6.382). In conclusion, we found that the elderly consumers financial independency did influence the eating-out decision making process. Considering that older Korean will become a financially independent consumer and will be eating away from home more often, food service operations should actively position themselves for this market and develop the market-driven menus and services to meet their needs and expectations.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.458-458
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• 2010

The process window for the etch selectivity of silicon nitride ($Si_3N_4$) layers to extreme ultra-violet (EUV) resist and variation of line edge roughness (LER) of EUV resist were investigated durin getching of $Si_3N_4$/EUV resist structure in a dual-frequency superimposed capacitive coupled plasma (DFS-CCP) etcher by varying the process parameters, such as the $CH_2F_2$ and $N_2$ gas flow rate in $CH_2F_2/N_2$/Ar plasma. The $CH_2F_2$ and $N_2$ flow rate was found to play a critical role in determining the process window for infinite etch selectivity of $Si_3N_4$/EUV resist, due to disproportionate changes in the degree of polymerization on $Si_3N_4$ and EUV resist surfaces. The preferential chemical reaction between hydrogen and carbon in the hydrofluorocarbon ($CH_xF_y$) polymer layer and the nitrogen and oxygen on the $Si_3N_4$, presumably leading to the formation of HCN, CO, and $CO_2$ etch by-products, results in a smaller steady-state hydrofluorocarbon thickness on $Si_3N_4$ and, in turn, in continuous $Si_3N_4$ etching due to enhanced $SiF_4$ formation, while the $CH_xF_y$ layer is deposited on the EUV resist surface. Also critical dimension (and line edge roughness) tend to decrease with increasing $N_2$ flow rate due to decreased degree of polymerization.