• Journal of Digital Contents Society
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• v.19 no.6
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• pp.1131-1144
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• 2018

The Purpose of this study is to propose 4F Process, which is one of the development methodology of the gamification. For the effectiveness analysis of the 4F Process, game and gamification related theories are applied and conducted comparative analysis with the published gamification development methodology. This studies results show that the 4F Process is a relatively high level of perfection of gamification development methodology than eight of published methodologies by found out this study team. But, there was a complementary point in the 4F Process. Based on results of this study, this study mentioned the pros and coms of the 4F Process and suggested the step-by-step guideline as a necessary element for the gamification development methodology.

• Journal of The Korean Association For Science Education
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• v.26 no.4
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• pp.568-580
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• 2006

The purpose of this study was to investigate the brain activities by 4-types of Generating Process of Scientific Emotion (GPSE) in the hypothesis-generating biological phenomena by using fMRI. Four-types of GPSE were involved in the Basic Generating Process (BGP), Retrospective Generating Process (RGP), Cognitive Generating Process (CGP) and Attributive Generating Process (AGP). For this study, we made an experimental design capable of validating the 4-types of generating process (e.g. BGP, RGP, CGP and AGP), and then measured BOLD signals of 10 pre-service teachers' brain activities by 3.0T fMRI system. Subjects were 10 healthy females majoring in biology education. As a result, there were clear differences among 4-types of GPSE. Brain areas activated by BGP were at right occipital lobe (BA 17), at left thalamus and left parahippocampal gyrus, while in the case of RGP, at left superior parietal lobe (BA 8, 9), at left pulvinar and left globus pallidus were activated. Brain areas activated by CGP were the right posterior cingulate and left medial frontal gyrus (BA 6). In the case of AGP, the most distinctively activated brain areas were the right medial frontal gyrus (BA 8) and left inferior parietal lobule (BA 40). These results would mean that each of the 4-types of GPSE has a specific neural networks in the brain, respectively. Furthermore, it would provide the basis of brain-based learning in science education.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.284-284
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• 2011

Recently, the increasing degree of device integration in the fabrication of Si semiconductor devices, etching processes of nano-scale materials and high aspect-ratio (HAR) structures become more important. Due to this reason, etch selectivity control during etching of HAR contact holes and trenches is very important. In this study, The etch selectivity and etch rate of TEOS oxide layer using ACL (amorphous carbon layer) mask are investigated various process parameters in CH2F2/C4F8/O2/Ar plasma during etching TEOS oxide layer using ArF/BARC/SiOx/ACL multilevel resist (MLR) structures. The deformation and etch characteristics of TEOS oxide layer using ACL hard mask was investigated in a dual-frequency superimposed capacitively coupled plasma (DFS-CCP) etcher by different fHF/ fLF combinations by varying the CH2F2/ C4F8 gas flow ratio plasmas. The etch characteristics were measured by on scanning electron microscopy (SEM) And X-ray photoelectron spectroscopy (XPS) analyses and Fourier transform infrared spectroscopy (FT-IR). A process window for very high selective etching of TEOS oxide using ACL mask could be determined by controlling the process parameters and in turn degree of polymerization. Mechanisms for high etch selectivity will discussed in detail.

• Journal of the Korean institute of surface engineering
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• v.39 no.3
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• pp.137-141
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• 2006

Process window for infinite etch selectivity of silicon nitride $(Si_3N_4)$ layers to ArF photoresist (PR) was investigated in dual frequency superimposed capacitive coupled plasma (DFS-CCP) by varying the process parameters such as low frequency power $(P_{LF})$, $CH_2F_2$ and $H_2$ flow rate in $CH_2F_2/H_2/Ar$ plasma. It was found that infinite etch selectivities of $Si_3N_4$ layers to the ArF PR on both blanket and patterned wafers can be obtained for certain gas flow conditions. The etch selectivity was increased to the infinite values as the $CH_2F_2$ flow rate increases, while it was decreased from the infinite etch selectivity as the $H_2$ flow rate increased. The preferential chemical reaction of the hydrogen with the carbon in the polymer film and the nitrogen on the $Si_3N_4$ surface leading to the formation of HCN etch by-products results in a thinner steady-state polymer and, in turn, to continuous $Si_3N_4$ etching, due to enhanced $SiF_4$ formation, while the polymer was deposited on the ArF photoresist surface.

• Bulletin of the Korean Chemical Society
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• v.33 no.7
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• pp.2315-2319
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• 2012

To improve the performance of $LiFePO_4F$, a novel sol-gel process is developed. For comparison, ceramic process is also implemented. From X-ray diffraction results we know that each sample adopts a triclinic $P{\bar{1}}$ space group, and they are isostructural with amblygonite and tavorite. The scanning electron microscope images show that the homogeneous grains with the dimension of 300-500 nm is obtained by the sol-gel process; meanwhile the sample particles obtained by ceramic process are as big as 1000-3000 nm. By galvanostatic tests and at electrochemical impedance spectroscopy method, the sample obtained by sol-gel process presents better electrochemical properties than the one obtained by ceramic process.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.266-266
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• 2013

We show a set-up of poly (4,4'-aminotriphenylene hexafluoroisopropylidenediphthalimide) (6F-TPA PI)/Al sample in which holes are injected by photoelectron emission process instead of direct charge carrier injection via metal electrode. In this process, an irreversible electrical phase transition of 6F-TPA PI is found in contrast to the Al/6F-TPA PI/Al structure, leading to a write-once-readmany behavior. The photoelectron spectroscopy results measured before and after the switching process revealed that the irreversible electrical phase transition of 6F-TPA PI is attributed to the chemical modification of the carbonyl group in phthalimide moiety.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.244-244
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• 2012

Polymer memory devices have attracted considerable attention because of their advantages such as low cost potential, good scalability, flexibility, simplicity in structure, and large capacity for data storage. Metal/poly (4,4'-aminotriphenylene hexafluoroisopropylidenediphthalimide) (6F-TPA PI)/metal system has been found to show an electrical bi-stable behavior. Here, we show a novel set-up of 6F-TPA PI/Al sample in which holes are injected by photoelectron emission process instead of direct charge carrier injection via metal electrode. In this process, an irreversible electrical phase transition of 6F-TPA PI is found, leading to a write-once-read-many (WORM) behavior. The photoelectron spectroscopy results measured before and after the switching process revealed that the irreversible electrical phase transition of 6F-TPA PI is attributed to the chemical modification of the carbonyl group in phthalimide moiety.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.23 no.4
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• pp.281-286
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• 2011

The objective of this study is to optimize the four-bed six-step pressure swing adsorption(PSA) process for high purity $CH_4$ recovery from the biogas. The effects of P/F(purge to feed) ratio and cycle time on the process performance were evaluated. The cyclic steady-states of PSA process were reached after 12 cycles. The purity and recovery rate of product gas, pressure and temperature changes were constant as the cycle repeated. It was shown that the P/F ratio gave significant effect on the product recovery rate by increasing the amount of purge gas in purge and regeneration step. The optimal P/F ratio was found to be 0.08. As the cycle time increased, the product purity decreased by increasing the feed gas flow rate. It was found that the optimal operating conditions were P/F ratio of 0.08 and total cycle time of 1,440 seconds with the purity of 97%.

• Journal of the East Asian Society of Dietary Life
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• v.15 no.4
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• pp.475-482
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• 2005

As Korea has approached the aging society, older Koreans have become an important force in restaurant sales today. To succeed with this silver market, it is important for restaurant managers to know who they are and which factor influence the older Koreans' eating-out decision making process. The purpose of this study was to investigate the effect of the elderly consumers financial independency on restaurant selection process. Data were collected from 178 older consumers above 55 years old and analyzed using the descriptive statistic analysis, MANOVA, and one-way ANOVA. The results showed that the elderly consumers financial independency significantly influenced the decision making process in determining where they eat out Significant differences were found between high income group and low income group in the Problem Recognition Step(Wilks' Lambda=0.776, F=3.796), Information Search Step(Wilks' Lambda=0.779, F=2.959), Alternative Evaluation Step (I :Wilks' Lambda=0.835, F=1.748/ II :Wilks' Lambda=0.764, F=3.212), and Purchase Decision Step(Wilks' Lambda=0.849, F=2.412), except the Post-Purchase Behavior(Wilks' Lambda=0.933, F=1.179). The more financially independent older consumers were, the more directly they were involved in the eating out decision making process. Older consumers with higher income and more personal property were likely to 'propose to eat out by themselves'(F=10.986), to obtain restaurant information from the 'printed materials'(F=9.707), to consider 'convenient location' as most important factor when they eat out(F=5.594), and to go to 'family restaurant'(F=7.067), 'Japanese restaurant'(F=7.391) and 'fine dining restaurants'(F-=6.382). In conclusion, we found that the elderly consumers financial independency did influence the eating-out decision making process. Considering that older Korean will become a financially independent consumer and will be eating away from home more often, food service operations should actively position themselves for this market and develop the market-driven menus and services to meet their needs and expectations.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.458-458
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• 2010

The process window for the etch selectivity of silicon nitride ($Si_3N_4$) layers to extreme ultra-violet (EUV) resist and variation of line edge roughness (LER) of EUV resist were investigated durin getching of $Si_3N_4$/EUV resist structure in a dual-frequency superimposed capacitive coupled plasma (DFS-CCP) etcher by varying the process parameters, such as the $CH_2F_2$ and $N_2$ gas flow rate in $CH_2F_2/N_2$/Ar plasma. The $CH_2F_2$ and $N_2$ flow rate was found to play a critical role in determining the process window for infinite etch selectivity of $Si_3N_4$/EUV resist, due to disproportionate changes in the degree of polymerization on $Si_3N_4$ and EUV resist surfaces. The preferential chemical reaction between hydrogen and carbon in the hydrofluorocarbon ($CH_xF_y$) polymer layer and the nitrogen and oxygen on the $Si_3N_4$, presumably leading to the formation of HCN, CO, and $CO_2$ etch by-products, results in a smaller steady-state hydrofluorocarbon thickness on $Si_3N_4$ and, in turn, in continuous $Si_3N_4$ etching due to enhanced $SiF_4$ formation, while the $CH_xF_y$ layer is deposited on the EUV resist surface. Also critical dimension (and line edge roughness) tend to decrease with increasing $N_2$ flow rate due to decreased degree of polymerization.