• Journal of the Microelectronics and Packaging Society
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• v.18 no.1
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• pp.15-21
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• 2011

In this study, flexural strength and fracture behavior of silicon die from single crystalline silicon wafer were investigated as a function of thickness. Silicon wafers with various thickness of 300, 200, 180, 160, 150, and 100 ${\mu}m$ were prepared by mechanical grinding and polishing of as-saw wafers. Flexural strength of 40 silicon dies (size: 62.5 mm${\times}$4 mm) from each wafer was measured by four point bending test, respectively. For statistical analysis of flexural strength, shape factor(i.e., Weibull modulus) and scale factor were determined from Weibull plot. Flexural strength reflecting both statistical fracture probability and size (thickness) effect of brittle silicon die was obtained as a linear function of die thickness. Fracture appearance was discussed in relation with measured fracture strength.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.35 no.12
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• pp.1549-1556
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• 2011

Tensile and creep tests were performed at various temperatures to investigate the mechanical properties of plastics used in automotive instrument panels. Mechanical properties such as Young's modulus and Poisson's ratios changed markedly with the test temperature. Three-point bending creep tests were performed for three kinds of plastics under four loading conditions. Coefficients in the time-hardening power law creep equation were obtained from the experiment, and the creep behavior was represented by a simple expression. The results of finite element creep analysis showed good agreement with the experimental results, while the difference between the numerical and experimental results increased with the load.

• Korean Journal of Materials Research
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• v.4 no.5
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• pp.590-599
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• 1994

A work on the brittle to ductile transition (BDT) in single crystal alumina has been performed to understand and assess the dynamics of dislocation mobility around crack tip of brittle material. The critical stress intensity factor and yield strengths were obtained from bending test using precracked specimens at elevated temperatures. It was found that the BDT temperature was dependent on strain rate and orientation of specimen : for (1120) fracture surface, $1034^{\circ}C$, $1150^{\circ}C$ for $4.2 \times 10^{-6}$, $4.2 \times 10^{-7}s^{-1}$ respectively. Under a 4 point bending test, the moving distance of dislocation generated near crack front in ductile range is determined by an etch pits method. The velocity of dislocation in sapphire obtained from the double etching method was applied to modelling study.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.4
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• pp.11-18
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• 2011

The quantitative interfacial adhesion energy of the Cu-Cu direct bonding layers was evaluated in terms of the bonding temperature and Ar+$H_2$ plasma treatment on Cu surface by using a 4-point bending test. The interfacial adhesion energy and bonding quality depend on increased bonding temperature and post-annealing temperature. With increasing bonding temperature from $250^{\circ}C$ to $350^{\circ}C$, the interfacial adhesion energy increase from $1.38{\pm}1.06$ $J/m^2$ to $10.36{\pm}1.01$ $J/m^2$. The Ar+$H_2$ plasma treatment on Cu surface drastically increase the interfacial adhesion energy form $1.38{\pm}1.06$ $J/m^2$ to $6.59{\pm}0.03$ $J/m^2$. The plasma pre-treatment successfully reduces processing temperature of Cu to Cu direct bonding.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.1
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• pp.45-50
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• 2014

Effects of wet chemical treatment and thermal cycle conditions on the quantitative interfacial adhesion energy of $Cu/SiN_x$ thin film interfaces were evaluated by 4-point bending test method. The test samples were cleaned by chemical treatment after Cu chemical-mechanical polishing (CMP). The thermal cycle test between Cu and $SiN_x$ capping layer was experimented at the temperature, -45 to $175^{\circ}C$ for 250 cycles. The measured interfacial adhesion energy increased from 10.57 to $14.87J/m^2$ after surface chemical treatment. After 250 thermal cycles, the interfacial adhesion energy decreased to $5.64J/m^2$ and $7.34J/m^2$ for without chemical treatment and with chemical treatment, respectively. The delaminated interfaces were confirmed as $Cu/SiN_x$ interface by using the scanning electron microscope and energy dispersive spectroscopy. From X-ray photoelectron spectroscopy analysis results, the relative Cu oxide amounts between $SiN_x$ and Cu decreased by chemical treatment and increased after thermal cycle. The thermal stress due to the mismatch of thermal expansion coefficient during thermal cycle seemed to weaken the $Cu/SiN_x$ interface adhesion, which led to increased CuO amounts at Cu film surface.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.3
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• pp.7-12
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• 2018

The effects of Ru deposition temperature and post-annealing conditions on the interfacial adhesion energies of atomic layer deposited (ALD) Ru diffusion barrier layer and Cu thin films for the advanced Cu interconnects applications were systematically investigated. The initial interfacial adhesion energies were 8.55, 9.37, $8.96J/m^2$ for the sample deposited at 225, 270, and $310^{\circ}C$, respectively, which are closely related to the similar microstructures and resistivities of Ru films for ALD Ru deposition temperature variations. And the interfacial adhesion energies showed the relatively stable high values over $7.59J/m^2$ until 250h during post-annealing at $200^{\circ}C$, while dramatically decreased to $1.40J/m^2$ after 500 h. The X-ray photoelectron spectroscopy Cu 2p peak separation analysis showed that there exists good correlation between the interfacial adhesion energy and the interfacial CuO formation. Therefore, ALD Ru seems to be a promising diffusion barrier candidate with reliable interfacial reliability for advanced Cu interconnects.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.4
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• pp.61-66
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• 2010

Cu-Cu thermo-compression bonding process was successfully developed as functions of the deposited Cu thickness and $Ar+H_2$ forming gas annealing conditions before and after bonding step in order to find the low temperature bonding conditions of 3-D integrated technology where the interfacial toughness was measured by 4-point bending test. Pre-annealing with $Ar+H_2$ gas at $300^{\circ}C$ is effective to achieve enough interfacial adhesion energy irrespective of Cu film thickness. Successful Cu-Cu bonding process achieved in this study results in delamination at $Ta/SiO_2$ interface rather than Cu/Cu interface.

• Journal of the Korean Society of Safety
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• v.25 no.3
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• pp.34-39
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• 2010

Unidirectional Carbon Fiber Reinforced Plastics (CFRP) are advanced materials which combine the characteristics of the light weight, high stiffness and strength. For those reasons, the use of the unidirectional CFRP has increased in jet fighters, aerospace structures. However, unidirectional CFRP composites have a lot of problems, especially delamination, compared with traditional materials such as steels and aluminums, and so forth. Therefore, the interlaminar fracture toughness for a laminate CFRP composite is very important. In this study, The mode II interlaminar fracture toughness was measured by using center notched flexure(CNF) test specimen. The CNF specimens using unidirectional carbon prepreg were fabricated by a hot-press with the gage pressure and temperature controller. And three kinds of a/L ratio was applied to these specimens. Here, we discuss the relations of the crack growth and the mode II interlaminar fracture under the four point bending CNF test. From the results, we shows that mode II interlaminar was occurred when the more $a_0$/L ratio, the less load. And $G_{IIC}$ also were obtained as 5.33, 2.9 and $0.58kJ/m^2$ according to $a_0$/L ratio=0.2, 0.3 and 0.4.

• Journal of the Korean Society for Nondestructive Testing
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• v.31 no.5
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• pp.529-535
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• 2011

In this study, evaluation of acoustic emission signals characteristics for the post weld heat treated (PWHT) multi-pass weldment and weldment was dealt. Charpy standard specimens were taken from the lowest, middle and highest regions of the weld block. Pre-crack was made using the repeated load. Four point bend and AE tests were conducted simultaneously. Regardless of the specimens, AE signals were absent within elastic region and produced in the process of plastic deformation. AE signals for all specimens were not emitted after the maximum load. Value of signal strength for the all PWHT specimens was lower than that of the weldment. Besides, relations of plastic deformation zone size and accumulated AE counts for the PWHT specimens were more simple compared with the weldment. In case of the PWHT specimen, particles on the fractured surface decreased prominently compared with the weldment due.to PWHT. From these results, it can be concluded that PWHT was effective in reducing the AE sources for the weldment.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.3
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• pp.31-37
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• 2009

Cu-Cu thermo-compression bonding process was successfully developed as functions of the $N_2+H_2$ forming gas annealing conditions before and after bonding step in order to find the low temperature bonding conditions of 3-D integrated technology where the quantitative interfacial adhesion energy was measured by 4-point bending test. While the pre-annealing with $N_2+H_2$ gas below $200^{\circ}C$ is not effective to improve the interfacial adhesion energy at bonding temperature of $300^{\circ}C$, the interfacial adhesion energy increased over 3 times due to post-annealing over $250^{\circ}C$ after bonding at $300^{\circ}C$, which is ascribed to the effective removal of native surface oxide after post-annealing treatment.