• Title/Summary/Keyword: 3d-transition metal

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Water Oxidation Mechanism for 3d Transition Metal Oxide Catalysts under Neutral Condition

  • Seo, Hongmin;Cho, Kang Hee;Ha, Heonjin;Park, Sunghak;Hong, Jung Sug;Jin, Kyoungsuk;Nam, Ki Tae
    • Journal of the Korean Ceramic Society
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    • v.54 no.1
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    • pp.1-8
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    • 2017
  • Electrochemical water splitting to produce hydrogen energy is regarded as a promising energy conversion process for its environmentally friendly nature. To improve cell efficiency, the development of efficient water oxidation catalysts is essentially demanded. For several decades, 3d transition metal oxides have been intensively investigated for their high activity, good durability and low-cost. This review covers i) recent progress on 3d transition metal oxide electrocatalysts and ii) the reaction mechanism of oxygen evolving catalysis, specifically focused on the proposed pathways for the O-O bond formation step.

Electronic Structures of half-metallic phase of ternary Fe_2TX (T = 3d transition metal and X = Al, Si) (절반금속 Fe_2TX 화합물의 전자구조 연구 (T = 3d 전이금속; X = Al, Si))

  • Park, Jin-Ho;Kwon, Se-Kyun;Byung ll Min
    • Proceedings of the Korean Magnestics Society Conference
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    • 2000.09a
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    • pp.584-584
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    • 2000
  • Electronic structures of ordered Fe$_3X (X = Al, Si), and their derivative ternary alloys of Fe_2TX (T = 3d transition metal) have been investigated by using the linearized muffin-tin orbital (LMTO) band method. The role of the coupling between substituted transition metal and its neighbors is investigated by calculating the magnetic moments and local density of states (LDOS). It is shown that it is essential to include the coupling beyond nearest neighbors in obtaining the magnetic moment of Fe alloy. The preferential sites of T impurities in Fe_3X are determined from the total energy calculations. The derivative ternary alloys of Fe_2TX have characteristic electronic structures of semi-metal for Fe_2VAI and (nearly) half-metal for Fe_2TAI (T = Cr, Mn) and Fe_2TSi (T = V, Cr, Mn)

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Applications of metal-semiconductor phase transition in 2D layered transition metal dichalcogenides (2차원 층상구조 전이금속칼코젠의 반도체-도체 구조상전이 기반 응용 기술)

  • Cho, Suyeon;Kim, Sera;Seok, Jinbong;Yang, Heejun
    • Vacuum Magazine
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    • v.3 no.1
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    • pp.4-8
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    • 2016
  • Motivated by two dimensional graphene, layered transition metal dichalcogenides (TMDs) have attracted scientific interests by their diverse electronic, optical and catalytic properties. In particular, group 6 TMDs such as $MoS_2$ and $MoTe_2$ have polymorphs (with metallic octahedral and semiconducting hexagonal phases) which are not present in graphene. Here, we introduce a new concept in 2D materials' studies, structural phase transition, with group 6 TMDs and its current research trend and applications for electric device and electrochemical catalyst.

Metal-insulator Transition in $(Sr_{0.75},\;La_{0.25})TiO_3$ Ultra-thin Films

  • Choi, Jae-Du;Choi, Eui-Young;Lee, Yun-Sang;Lee, Jai-Chan
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.10a
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    • pp.19.2-19.2
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    • 2011
  • The $(Sr_{0.75},\;La_{0.25})TiO_3$ (SLTO) ultra-thin films with various thicknesses have been grown on Ti-O terminated $SrTiO_3$(100) substrate using Laser-Molecular Beam Epitaxy (Laser MBE). By monitoring the in-situ specular spot intensity oscillation of reflection high energy electron diffraction (RHEED), we controlled the layer-by-layer film growth. The film structure and topography were verified by atomic force microscopy (AFM) and high resolution thin film x-ray diffraction by the synchrotron x-ray radiation. We have also investigated the electronic band structure using x-ray absorption spectroscopy (XAS). The ultra thin SLTO film exhibits thickness driven metal-insulator transition around 8 unit cell thickness when the film thickness progressively reduced to 2 unit cell. The SLTO thin films with an insulating character showed band splitting in Ti $L_3-L_2$ edge XAS spectrum which is attributed to Ti 3d band splitting. This narrow d band splitting could drive the metal-insulator transition along with Anderson Localization. In optical conductivity, we have found the spectral weight transfer from coherent part to incoherent part when the film thickness was reduced. This result indicates the possibility of enhanced electron correlation in ultra thin films.

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Adsorption and Separation of Ag(I) Using a Merrifield Resin Bound NTOE, NDOE in Aqueous Solution (수용액에서 NTOE, NDOE가 결합된 Merrifield 수지를 이용한 Ag(I)의 흡착 및 분리 특성)

  • Lee, Cheal-Gyu;Kim, Hae Joong
    • Analytical Science and Technology
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    • v.12 no.2
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    • pp.159-165
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    • 1999
  • The adsorption and separation behaviors of transition metal ions using a merrifield resin bound 1,12-diaza-3,4:9,10-dibenzo-5,8-dioxacyclopentadecane (NTOE) and 1,12,15-triaza-3,4:9,10-dibenzo-5,8-dioxacycloheptadecane(NDOE) were investigated in aqueous solution. The orders of adsorption degree(E) and distribution ratio(D) of transition metal ions were Cu(II)$t_R$) of metal ions were affected by adsorption degree(E) and distribution ratio(D). This results showed good separation efficiency of Ag(I) from mixed metal solution.

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Investigation of the Thermal-to-Electrical Properties of Transition Metal-Sb Alloys Synthesized for Thermoelectric Applications

  • Jong Min Park;Seungki Jo;Sooho Jung;Jinhee Bae;Linh Ba Vu;Kwi-Il Park;Kyung Tae Kim
    • Journal of Powder Materials
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    • v.31 no.3
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    • pp.236-242
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    • 2024
  • The development of thermoelectric (TE) materials to replace Bi2Te3 alloys is emerging as a hot issue with the potential for wider practical applications. In particular, layered Zintl-phase materials, which can appropriately control carrier and phonon transport behaviors, are being considered as promising candidates. However, limited data have been reported on the thermoelectric properties of metal-Sb materials that can be transformed into layered materials through the insertion of cations. In this study, we synthesized FeSb and MnSb, which are used as base materials for advanced thermoelectric materials. They were confirmed as single-phase materials by analyzing X-ray diffraction patterns. Based on electrical conductivity, the Seebeck coefficient, and thermal conductivity of both materials characterized as a function of temperature, the zT values of MnSb and FeSb were calculated to be 0.00119 and 0.00026, respectively. These properties provide a fundamental data for developing layered Zintl-phase materials with alkali/alkaline earth metal insertions.

Vapor Deposition Techniques for Synthesis of Two-Dimensional Transition Metal Dichalcogenides

  • Song, Jeong-Gyu;Park, Kyunam;Park, Jusang;Kim, Hyungjun
    • Applied Microscopy
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    • v.45 no.3
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    • pp.119-125
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    • 2015
  • Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted significant attention due to their unique and exotic properties attributed to their low dimensionality. In particular, semiconducting 2D TMDCs such as $MoS_2$, $WS_2$, $MoSe_2$, and $WSe_2$ have been demonstrated to be feasible for various advanced electronic and optical applications. In these regards, process to synthesize high quality 2D TMDCs layers with high reliability, wafer-scale uniformity, controllable layer number and excellent electronic properties is essential in order to use 2D TMDCs in practical applications. Vapor deposition techniques, such as physical vapor deposition, chemical vapor deposition and atomic layer deposition, could be promising processes to produce high quality 2D TMDCs due to high purity, thickness controllability and thickness uniformity. In this article, we briefly review recent research trend on vapor deposition techniques to synthesize 2D TMDCs.