• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.226-229
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• 2005

In this study, a step-down piezoelectric transformer was fabricated to utilize as an adapter for charging batteries of mobile electronic appliances. The ceramic part of the transformer is $Pb[(Mn_{1/3}Sb_{2/3})_{0.05}Zr_{0.475}Ti_{0.475}]O_3$ with mechanical quality factor of 1600, electromechanical coupling coefficient 59 %, and piezoelectric constant d33 1300, which can be utilized as a piezoelectric transformer. A simply fabricated disk-typed test pattern of diameter 28 mm and thickness 2 mm was used to characterize resonant frequency, Qm, kp according to the different input/output electrode area. efficiency and power as a function of load resistance was also investigated. The sample APT showed some spurious mode and BPT showed better frequency property. Taking all properties which are admittance, effective electromechanical coupling coefficient and mechanical quality factor most suitable for piezoelectric transformer is BPT which has 12 mm diameter electrode and the condition of 15 Vrms, 30 $\Omega$ made the maximum efficiency of 93.7 % and maximum power is 6W with 50 Vrms.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.11
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• pp.1007-1013
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• 2005

In this study, a step-down piezoelectric transformer was fabricated to utilize as an adapter for charging batteries of mobile electronic appliances. The ceramic part of the transformer is $Pb[(Mn_{1/3}Sb_{2/3})_{_0.05}Zr_{0.475}Ti_{0.475}]O_3$ with mechanical quality factor of 1600, electromechanical coupling coefficient $59\%$, and piezoelectric constant $d_{33}$ 1300, which can be utilized as a piezoelectric transformer. A simply fabricated disk-typed test pattern of diameter 28 mm and thickness 2 mm was used to characterize output voltage, step-down ratio as a function of electrode area with the input remained constant, and power, efficiency as a function of input voltage, and temperature-dependent electric characteristics were evaluated. The sample APT1 showed the best properties. The highest admittance, effective electromechanical coupling coefficient and an appropriate mechanical quality factor were obtained at the sample with the input/output area ratio of 1:1.5 at the common electrode, and the condition of 20 $V_{rms}$, $50\;\Omega$ made the maximum efficiency of $95\%$. The temperature was increased by 14.7'E as the input voltage was increased for $50\;V_{rms},\;50\;\Omega$.

• Nuclear Engineering and Technology
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• v.50 no.2
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• pp.218-222
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• 2018

An oxide-dispersion-strengthened (ODS) layer was formed on Zircaloy-4 tubes by a laser beam scanning process to increase mechanical strength. Laser beam was used to scan the yttrium oxide ($Y_2O_3$)-coated Zircaloy-4 tube to induce the penetration of $Y_2O_3$ particles into Zircaloy-4. Laser surface treatment resulted in the formation of an ODS layer as well as microstructural phase transformation at the surface of the tube. The mechanical strength of Zircaloy-4 increased with the formation of the ODS layer. The ring-tensile strength of Zircaloy-4 increased from 790 to 870 MPa at room temperature, from 500 to 575 MPa at $380^{\circ}C$, and from 385 to 470 MPa at $500^{\circ}C$. Strengthening became more effective as the test temperature increased. It was noted that brittle fracture occurred at room temperature, which was not observed at elevated temperatures. Resistance to dynamic high-temperature bursting improved. The burst temperature increased from 760 to $830^{\circ}C$ at a heating rate of $5^{\circ}C/s$ and internal pressure of 8.3 MPa. The burst opening was also smaller than those in fresh Zircaloy-4 tubes. This method is expected to enhance the safety of Zr fuel cladding tubes owing to the improvement of their mechanical properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.570-573
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• 2002

Pb(Zr0.52Ti0.48)O3 (PZT) thin films were deposited on the Pt/Ti bottom electrode by rf magnetron sputtering method from target containing 5%, 25% and 50% Pb excess for applying ferroelectric random access memory (FRAM). PZT films were deposited at $300^{\circ}C$ and then they were crystallized by rapid thermal annealing (RTA) at $700^{\circ}C$. After RTA treatment, our results showed that all PZT films indicated perovskite polycrystalline structure with preferred orientation (110) and no pyrochlore phase was observed by X-ray diffraction (XRD) and by Scanning electron microscopy (SEM). A well-fabricated PZT film of excess Pb 25% capacitor showed a leakage current density in the order of $2.63{\times}10^{-7}A/cm^2$ at 100kV/cm, a remanent polarization of $3.385{\mu}C/cm^2$ and a coercive field of 41.32 kV/cm. The results showed that Pb excess of target affects to electrical properties of PZT thin film.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.66-79
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• 2008

Several oxides have recently been reported to have resistance-switching characteristics for nonvolatile memory (NVM) applications. Both binary and ternary oxides demonstrated great potential as resistive-switching memory elements. However, the switching mechanisms have not yet been clearly understood, and the uniformity and reproducibility of devices have not been sufficient for gigabit-NVM applications. The primary requirements for oxides in memory applications are scalability, fast switching speed, good memory retention, a reasonable resistive window, and constant working voltage. In this paper, we discuss several materials that are resistive-switching elements and also focus on their switching mechanisms. We evaluated non-stoichiometric polycrystalline oxides ($Nb_2O_5$, and $ZrO_x$) and subsequently the resistive switching of $Cu_xO$ and heavily Cu-doped $MoO_x$ film for their compatibility with modem transistor-process cycles. Single-crystalline Nb-doped $SrTiO_3$ (NbSTO) was also investigated, and we found a Pt/single-crystal NbSTO Schottky junction had excellent memory characteristics. Epitaxial NbSTO film was grown on an Si substrate using conducting TiN as a buffer layer to introduce single-crystal NbSTO into the CMOS process and preserve its excellent electrical characteristics.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.38 no.10
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• pp.1069-1074
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• 2014

In this study, the piezoelectric characteristics of a piezoelectric paint sensor were investigated in relation to the poling time. This piezoelectric paint sensor was composed of PNN-PZT powder and epoxy resin with a 1:1 weight ratio. The dimensions of the paint specimen were $40{\times}10{\times}1mm^3$, and the top and bottom sides were both coated with a silver paste to create electrodes. During the poling treatment, the poling time was controlled to examine the effect of the piezoelectric properties, while the poling temperature was fixed at room temperature and the electric field was set to 4 kV/mm. The piezoelectric properties were measured by comparing the output voltage from the paint sensor to the force signal from an impact hammer when the impact hammer hit the specimen. In conclusion, the optimal poling conditions were found to be an electric field of 4 kV/mm and a poling time of around 30 min at room temperature.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1553-1555
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• 1999

Recently, $SrBi_2Ta_2O_9$(SBT) and $Pb(ZrTi)O_3$(PZT) were much attracted as materials of capacitor for ferroelectric random access memory(FRAM) showing higher read/write speed, lower power consumption and nonvolartility. Bi-layered SBT thin film has appeared as the most prominent fatigue free and low operation voltage for use in nonvolatile memory. To highly integrate FRAM, SBT thin film should be etched. A lot of papers on SBT thin film and its characteristics have been studied. However, there are few reports about SBT thin film due to difficulty of etching. In order to investigate properties of etching of SBT thin film, SBT thin film was etched in $CF_4$/Ar gas plasma using magnetically enhanced inductively coupled plasma (MEICP) system. When $CF_4/(CF_4+Ar)$ is 0.1, etch rate of SBT thin film was $3300{\AA}/min$, and etch rate of Pt was $2495{\AA}/min$. Selectivities of SBT to Pt. $SiO_2$ and photoresist(PR) were 1.35, 0.6 and 0.89, respectively. With increasing $CF_4$ gas, etch rate of SBT thin film and $P_t$ decreased.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.36 no.9
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• pp.931-935
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• 2012

In this study, we fabricate and investigate low-temperature solid oxide fuel cells with a ceramic substrate/porous metal/ceramic/porous metal structure. To realize low-temperature operation in solid oxide fuel cells, the membrane should be fabricated to have a thickness of the order of a few hundreds nanometers to minimize IR loss. Yttrium-doped barium zirconate (BYZ), a proton conductor, was used as the electrolyte. We deposited a 350-nm-thick Pt (anode) layer on a porous substrate by sputter deposition. We also deposited a 1-${\mu}m$-thick BYZ layer on the Pt anode using pulsed laser deposition (PLD). Finally, we deposited a 200-nm-thick Pt (cathode) layer on the BYZ electrolyte by sputter deposition. The open circuit voltage (OCV) is 0.806 V, and the maximum power density is 11.9 mW/$cm^2$ at $350^{\circ}C$. Even though a fully dense electrolyte is deposited via PLD, a cross-sectional transmission electron microscopy (TEM) image reveals many voids and defects.

• Journal of Ocean Engineering and Technology
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• v.16 no.6
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• pp.60-64
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• 2002

This paper describes the machining characteristics of the MoSi$_2$--based composites through the process of electric discharge drilling with various tubular electrodes. In addition to hardness characteristics, microstructures of Nb/MoSi$_2$laminate composites were evaluated from the variation of fabricating conditions, such as preparation temperature, applied pressure, and pressure holding time. MoSi$_2$-based composites have been developed in new materials for jet engines of supersonic-speed airplanes and gas turbines for high-temperature generators. These high performance engines may require new hard materials with high strength and high temperature-resistance. Also, with the exception of grinding, traditional machining methods are not applicable to these new materials. Electric discharge machining (EDM) is a thermal process that utilizes a spark discharge to melt a conductive material. The tool electrode is almost -unloaded, because there is n direct contact between the tool electrode and the work piece. By combining a non-conducting ceramic with more conducting ceramic, it was possible to raise the electrical conductivity. From experimental results, it was found that the lamination from Nb sheet and MoSi$_2$ powder was an excellent strategy to improve hardness characteristics of monolithic MoSi$_2$. However, interfacial reaction products, like (Nb, Mo)SiO$_2$and Nb$_2$Si$_3$formed at the interface of Nb/MoSi$_2$, and increased with fabricating temperature. MoSi$_2$composites, with which a hole drilling was not possible through the conventional machining process, enhanced the capacity of ED-drilling by adding MbSi$_2$, relative to that of SiC or ZrO$_2$reinforcements.

• Proceedings of the Korean Nuclear Society Conference
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• 1996.05b
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• pp.141-147
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• 1996

1979년 3월 Three Mile Island 2 (TMI-2) 발전소에서 사고가 발생했을 때 원자로용기내에 생성된 수소기체로 인하여 운전원은 원자로용기의 수위를 정확히 측정할 수 없었으며, 이로 인하여 사고상태를 신속히 파악하지 못하였다. TMI 사고이후 미국 원자력규제위원회 NRC는 이 같은 문제점을 해결하고자 미국내 모든 원전에서 사고 또는 비정상 조건이 발생할 경우에 원자로 용기 수위에 대하여 운전원이 신뢰성을 갖을 수 있는 후속조치를 수행토록 요구하였다. 또한 미국의 대표적인 전력연구소인 EFRI에서는 개량형 경수로 (Advanced Light Water Reactor : ALWR) 설계 요건으로 이러한 설계가 반영되도록 요건화 하였다.［1］. 본 논문에서는 2,825 MWt급 한국형 표준원전을 대상으로 EPRI에서 요구한 설계요건에 따라 TMI 2 발전소에서와 같은 사고로 인하여 수소기체가 발생했을 경우와 발전소가 비정상 상태로 인하여 증기가 발생했을 경우에, 이를 신속히 제거하여 운전원이 원자로용기의 수위를 정확히 감지할 수 있도록 하는 설계 방안을 검토하였다. 따라서, 설계방안으로 원자로용기에 모인 증기 또는 수소기체를 계통중 가장 높은 위치에 있으며, 계통구성 기기중 유일하게 2상을 유지하고 있는 가압기로 배출시키고자 두 기기간에 연결관을 설치하는 방안에 대해서 분석하였다. 원자로용기 상부해드와 가압기를 연결하는 방안은 여러가지가 있으나, 검토한 결과 한국형 표준원전에서는 연결관을 가압기 상부해드보다 4m 높게하여 원자로용기 상부해드와 연결하는 방안이 EPRI의 설계요건을 만족하면서 기존설계에 영향을 가장 적게 미치는 적합한 설계방안으로 분석되었다.크다는 단점이 있다.TEX>$_2$O$_3$ 흡착제 제조시 TiO$_2$ 함량에 따른 Co$^{2＋}$ 흡착량과 25$0^{\circ}C$의 고온에서 ZrO$_2$와 $Al_2$O$_3$의 표면에 생성된 코발트 화합물을 XPS와 EPMA로 부터 확인하였다.인을 명시적으로 설명할 수 있다. 둘째, 오류의 시발점을 정확히 포착하여 동기가 분명한 수정대책을 강구할 수 있다. 셋째, 음운 과 정의 분석 모델은 새로운 언어 학습시에 관련된 언어 상호간의 구조적 마찰을 설명해 줄 수 있다. 넷째, 불규칙적이며 종잡기 힘들고 단편적인 것으로만 보이던 중간언어도 일정한 체계 속에서 변화한다는 사실을 알 수 있다. 다섯째, 종전의 오류 분석에서는 지나치게 모국어의 영향만 강조하고 다른 요인들에 대해서는 다분히 추상적인 언급으로 끝났지만 이 분석을 통 해서 배경어, 목표어, 특히 중간규칙의 역할이 괄목할 만한 것임을 가시적으로 관찰할 수 있 다. 이와 같은 오류분석 방법은 학습자의 모국어 및 관련 외국어의 음운규칙만 알면 어느 학습대상 외국어에라도 적용할 수 있는 보편성을 지니는 것으로 사료된다.없다. 그렇다면 겹의문사를 [-wh]의리를 지 닌 의문사의 병렬로 분석할 수 없다. 예를 들어 누구누구를 [주구-이-ν가] [누구누구-이- ν가]로부터 생성되었다고 볼 수 없다. 그러므로 [-wh] 겹의문사는 복수 의미를 지닐 수 없 다. 그러면 단수 의미는 어떻게 생성되는가\ulcorner 본 논문에서는 표면적 형태에도 불구하고