• 제목/요약/키워드: 3D-stacked

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High-Gain and Wideband Microstrip Antenna Using Glass/Epoxy Composite and Nomex Honeycomb (유리섬유/에폭시 복합재료와 허니컴을 이용한 고성능의 마이크로스트립 안테나 설계)

  • You C.S.;Hwang W.
    • Proceedings of the Korean Society For Composite Materials Conference
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    • 2004.04a
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    • pp.1-4
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    • 2004
  • In this paper we developed Composite-Smart-Structures(CSS) using sandwich structure composed of Glass/Epoxy laminates and Nomex honeycomb and microstrip antenna. Transmission/reflection theory shows that antenna performances can be improved due to multiple reflection by Glass/Epoxy facesheet, and honeycomb is used for air gap between antenna and facesheet. Stacked radiating patches are used for the wideband. Facesheet and honeycomb thicknesses are selected considering both wideband and high gain. Measured electrical performances show that CSS has wide bandwidth over $10\%$ and higher gain by 3.5dBi than initially designed antenna, and no doubt it has excellent mechanical performances by sandwich effect given by composite laminates and honeycomb core. The CSS concept can be extended to give a useful guide for manufacturers of structural body panels as well as antenna designers, promising innovative future communication technology.

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Electro-Optical Characteristics of a new AC-PDP with stacked electrode (다단형 전극구조를 가진 새로운 AC-PDP의 전기-광학적 특성)

  • Ok, Jung-Woo;Cho, Sung-Yong;Kim, Hyun-Jong;Choi, Jun-Young;Park, Chung-Hoo
    • Proceedings of the KIEE Conference
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    • 2006.07c
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    • pp.1461-1462
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    • 2006
  • 본 연구에서는 우리는 ITO전각을 사용하지 않는 새로운 전극 구조를 가지는 AC-PDP를 제안하였다. 제안한 구조는 댄스 전극과 유전체를 교대로 쌓아 올린 구조로서 긴 방전 경로와 낮은 방전 전류, 높은 휘도의 특징과 높은 효율을 내었다. 먼저 2-D 시뮬레이션의 결과를 기초로 하여, 제안한 구조를 가지는 테스트 패널을 제작하였다. 기존의 전극구조와 비교하였을 때, 제안한 구조는 발광 효율이 약 3배 증가하였고, 휘도는 약 50% 증가하였으며 방전전류는 약 60% 감소하였다.

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Cavity-backed Two-arm Spiral Antenna with a Ring-shaped Absorber for Partial Discharge Diagnosis

  • Kim, Han-Byul;Hwang, Keum-Cheol;Kim, Hyeong-Seok
    • Journal of Electrical Engineering and Technology
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    • v.8 no.4
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    • pp.856-862
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    • 2013
  • A cavity-backed two-arm spiral antenna for partial discharge diagnosis is presented. The proposed antenna consists of a two-arm Archimedean spiral, a tapered microstrip balun as spiral antenna feed, and a ring-shaped absorber-loaded cavity. The Archimedean spiral antenna is designed for the operating frequency band of 0.3 GHz to 1.5 GHz and fed by the tapered microstrip balun. The cavity is utilized to transform the bidirectional beam into a unidirectional beam, thereby enhancing gain. The ring-shaped absorber is stacked in the cavity to reduce the reflected waves from the cavity wall. The proposed antenna is designed and simulated using CST Microwave Studio. A prototype of the proposed antenna is likewise fabricated and tested. The measured radiation patterns are directional to the positive z-axis, and the measured peak gain is 8.13 dBi at a frequency of 1.1 GHz.

Crustal structure beneath broadband seismic station using receiver function (2) (수신함수를 이용한 관측소 하부의 지진파 속도구조 (2))

  • 박윤경;전정수;김성균
    • Proceedings of the Earthquake Engineering Society of Korea Conference
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    • 2003.09a
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    • pp.3-7
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    • 2003
  • The velocity structure beneath the CHNB broadband station is determined by receiver function analysis using by from teleseismic P waveforms. The detailed broadband receiver functions are obtained by stacking method for source-equalized vertical, radial and tangential components of teleseismic P waveforms. A time domain inversion uses the stacked radial receiver function to determine vertical P wave velocity structure beneath the station. The crustal velocity structures beneath the stations are estimated using the receiver function inversion method in the case at the crustal model parameterized by many thin, flat-lying, homogeneous layers. Events divide into 4 groups. four azimuths corresponding to events in group a(southwest), b(south), c(southeast), d(northeast). The result of crust at model inversion shows the crustal velocity structure beneath the CHNB station varies smoothly with increasing depth. The conard discontinuity lies around 18 km and moho discontinuity lies range from 30 to 34 km.

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Load and Capacitor Stacking Topologies for DC-DC Step Down Conversion

  • Mace, Jules;Noh, Gwangyol;Jeon, Yongjin;Ha, Jung-Ik
    • Journal of Power Electronics
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    • v.19 no.6
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    • pp.1449-1457
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    • 2019
  • This paper presents two voltage domain stacking topologies for powering integrated digital loads such as multiprocessors or 3D integrated circuits. Pairs of loads and capacitors are connected in series to form a stack of voltage domains. The voltage is balanced by switching the position of the capacitors in one case and the position of the loads in the other case. This method makes the voltage regulation robust to large differential load power consumption. The first configuration can be named the load stacking topology. The second configuration can be named the capacitor stacking topology. This paper aims at proposing and comparing these two topologies. Models of both topologies and a switching scheme are presented. The behavior, control scheme, losses and overall performance are analyzed and compared theoretically in simulation and experiments. Experimental results show that the capacitor stacking topology has better performance with a 30% voltage ripple reduction.

An Analysis of TX/RX Microstrip Single Element using FDTD at Ku-band and 8X4 Array Antenna (FDTD 방법을 이용한 Ku 대역 송수신 겸용 마이크로스트립 단일 소자 해석 및 8X4 배열 안테나)

  • 윤재승;전순익
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.14 no.8
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    • pp.830-838
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    • 2003
  • In this paper, TX/RX dual operation microstrip single antenna for satellite communication is designed, analyzed, fabricated and measured. TX/RX frequency ranges are 14.0∼l4.5 GHz, 11.7∼12.75 GHz in respectively and vertical and horizontal polarizations are used for TX and RX. This antenna uses microstrip direct feeding for RX and aperture coupled strip-line feeding for TX and accommodates stacked elements for a high directivity and wide impedance bandwidth. In an analysis of single element, FDTD and MOM was compared and FDTD analysis was more accurate because of the consideration of finite structure and imperfect two ground planes. The proposed structure facilitates generally to an extension of two dimensional array and lower an unwanted radiation by strip-line feed in TX. TX/RX 8${\times}$4 array has a return loss below -10 dB, -14 dB in TX, RX respectively and a gain ranging from 19.1∼20.7 dB in TX, 21.2∼21.8 dB in RX which has a radiation efficiency of 43∼5l %, 52∼57 %.

Synthesis and Characterization of Tetrathiafulvalene Charge Transfer Compounds with Iron and Antimony Halides

  • Kim Young In;Choi Sung Nak;Jung Woo Sung
    • Bulletin of the Korean Chemical Society
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    • v.15 no.6
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    • pp.465-468
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    • 1994
  • The charge transfer compounds $(TTF)_4FeCl_3{\cdot}CH_3OH,\;(TTF)_4SbCl_4\;and\;(TTF)_5(SbBr_4)_2{\cdot}CH_3COCH_3$ were prepared from reactions of the TTF (tetrathiafulvalene) and metal halides. The compounds were characterized by spectroscopic (UV,IR, EPR and XPS) methods, magnetic susceptibility and electrical conductivity measurements. The d.c electrical conductivities of the pressed pellets are in the order of $10^{-1}-10^{-3} Scm^{-1}$, which lies in the range of semiconductor region at room temperature. It means that the partially ionized TTF has stacked in low-dimensional chain in each compound. Spectroscopic properties also indicate that TTF molecules are partially ionized and charge transfer has occurred from (TTF)n to Fe(III) center in $(TTF)_4FeCl_3{\cdot}CH_3OH$ whereas to the $-SbX_4^-$ entity in $(TTF)_4SbCl_4\;and\;(TTF)_5(SbBr_4)_2{\cdot}CH_3COCH_3$. The EPR g values are consistent with TTF radical formation and EPR linewidths suggest the delocalization of unpaired electrons along TTF stacks. A signal arised from metal (Fe and Sb) ions were not detected in EPR spectra, indicating that metal ion is in the diamagnetic state in each compound. The diamagnetic state was also examined by the magnetic susceptibility measurement. The magnetic properties reveal the significant interaction between the $TTF^+$ radical cations in the stacks. The oxidation state of metal ions was also investigated by XPS spectra.

Design and Growth of InAs Multi-Quantum Dots and InGaAs Multi-Quantum Wells for Tandem Solar Cell (텐덤형 태양전지를 위한 InAs 다중 양자점과 InGaAs 다중 양자우물에 관한 연구)

  • Cho, Joong-Seok;Kim, Sang-Hyo;HwangBoe, Sue-Jeong;Janng, Jae-Ho;Choi, Hyon-Kwang;Jeon, Min-Hyon
    • Journal of the Korean Vacuum Society
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    • v.18 no.5
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    • pp.352-357
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    • 2009
  • The InAs multi-quantum dots (MQDs) solar cell and InGaAs multi-quantum wells (MQWs) solar cell to cover 1.1 eV and 1.3 eV were designed by 1D poisson, respectively. The MQDs and MQWs of 5, 10, 15 layers were grown by molecular beam epitaxy. The photo luminescence results showed that the 5 period stacked MQDs have the highest intensity at around 1.1 eV with 57.6 meV full width at half maximum (FWHM). Also we can observe 10 period stacked MQWs peak position which has highest intensity at 1.31 eV with 12.37 meV FWHM. The density and size of QDs were observed by reflection high energy electron diffraction pattern and atomic force microscope. Futhermore, AlGaAs/GaAs sandwiched tunnel junctions were modified according to the width of GaAs layer on p-type GaAs substrates. The structures with GaAs width of 30 nm and 50 nm have backward diode characteristics. In contrast, tunnel diode characteristics were observed in the 20 nm of that of sample.

Properties of CulnSe$_{2}$ thin films selenizing indium/copper layers prepared by D.C. magnetron sputtering (D.C. magnetron sputtering에 의해 indium/copper 층이 selenizing된 $CuInSe_2$막의 특성)

  • Han, Sang-Kyu;Kim, Sun-Jae;Lee, Hyung-Bock;Lee, Byung-Ha;Park, Sung
    • Electrical & Electronic Materials
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    • v.8 no.3
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    • pp.298-305
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    • 1995
  • Copper-indium diselenide, $CuInSe_2$, thin films have been fabricated by selenizing Cu/In stacked layers with different sputtered Cu/(Cu+ln) mole ratios at 450.deg. C for 1hr on alumina substrates. The selenium source was selenium vapor. Microstructure, crystallization, and composition of the selenized $CuInSe_2$ films were examined by using scanning electron microscope, X-ray diffraction, Auger electron spectroscopy, and secondary ion mass spectrometry. Electrical resistivity and hall effects were also measured to investigate the electrical properties. As the sputtered Cu/(Cu+In) mole ratio of In/Cu layer increased, the amounts of void and CuSe phase in the selenized films increased but the composition of $CuInSe_2$ phase was the same regardless of the sputtered mole ratio. Comparing the electrical properties of $CuInSe_2$ thin film before and after the chemical etching, it was seen that the electrical resistivity, carrier concentration, and carrier mobility of the selenized films were affected by the amount of CuSe phase which seemed to increase primarily the hole concentration of the selenized films.

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Finite Element Analysis of Lumbar Spine under Surgical Condition (척추 수술시 요추의 유한요소해석)

  • Kim D. H.;Cho S. H.;Jang D. P.;Hwang W;Chung W. K;Oh S. H.;Kim Y. S.
    • Proceedings of the Korean Society For Composite Materials Conference
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    • 2004.04a
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    • pp.210-213
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    • 2004
  • We study the fracture behavior of the lumbar No.4 and No.5 vertebra subjected to posteroanterior (PA) forces, a three dimensional finite element method (FEM). The lumbar spine was modeled 3-dimensionally using commercial software based on the principle of convert stacked two dimensional CT scan images into three dimensional shapes. Determination of the boundary conditions corresponding to actual surgical conditions was not easy, so that the simplified spine beam analyses were performed. The results were used in three dimensional finite element (FE) analysis. This FE analysis, indicates that the fracture loads of the lumbar No.4 and No.5 vertebra are respectively 1550 N and 1500 N. These fracture loads are for static loading, but in actual conditions the load on the lumbar spine varies dynamically. We found that the fracture load of lumbar No.4 vertebra is larger than that of lumbar No.5 vertebra, as a result of the total stress difference by the moment.

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