• Title/Summary/Keyword: 3D-stacked

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Conformal Horn Antenna for Circular Polarization using Planar-type Radiator (평판형 방사소자를 이용한 원형편파용 혼 안테나 설계)

  • Jung, Young-Bae
    • Journal of IKEEE
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    • v.16 no.3
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    • pp.173-176
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    • 2012
  • This paper introduces a novel horn antenna for circular polarization using a planar-type radiator. This antenna can be divided to two parts, microstrip antenna and square horn. The microstrip antenna has the role of feeder and polarizer of the horn antenna, and it is designed to stacked type having metal spacer for high gain, high isolation and wideband characteristic. Using the proposed antenna structure, the horn antenna needs not additional structure such as feeder and polarizer, and the size of it can be considerably reduced. The horn antenna has typical gain of 8dBi and 3-dB axial-ratio bandwidth around 4.9%.This antenna can widely used for various antenna system for mobile and satellite communication using circular polarization expecially in high frequency band.

Target Altitude Extraction for Multibeam Surveillance Radar in Multipath Environmental Condition (다중 경로 환경 상태에서 다중 빔 탐색 레이다의 표적 고도 추출)

  • Chung, Myung-Soo;Hong, Dong-Hee;Park, Dong-Chul
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.18 no.10
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    • pp.1203-1210
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    • 2007
  • The multibeam surveillance radar is a state-of-art of 3D radar technology. It applies the stacked beam-on-received realized by a digital beamformer. In this paper, a method of a low target altitude extraction for multibeam surveillance radar in multipath environmental condition is proposed and investigated. The model of multipath propagation and radar generation produced from the low altitude target in multibeam surveillance radar and the nelder-mead simplex multipath reduction(NMSMR) method which enables a reliable low altitude target extraction in specular reflection situations are described. The proposed algorithm is simulated to confirm the effectiveness of proposed algorithm in accordance with a various of target altitudes and radar frequencies.

Fully Embedded 2.4GHz Compact Band Pass Filter into Multi-Layered Organic Packaging Substrate

  • Lee, Seung-J.;Lee, Duk-H.;Park, Jae-Y.
    • Journal of the Microelectronics and Packaging Society
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    • v.15 no.1
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    • pp.39-44
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    • 2008
  • In this paper, fully embedded 2.4GHz WLAN band pass filter (BPF) was investigated into a multi-layered organic packaging substrate using high Q spiral stacked inductors and high Dk MIM capacitors for low cost RF System on Package (SOP) applications. The proposed 2.4GHz WLAN BPF was designed by modifying chebyshev second order filter circuit topology. It was comprised of two parallel LC resonators for obtaining two transmission zeros. It was designed by using 2D circuit and 3D EM simulators for finding out optimal geometries and verifying their applicability. It exhibited an insertion loss of max -1.7dB and return loss of min -l7dB. The two transmission zeros were observed at 1.85 and 6.7GHz, respectively. In the low frequency band of $1.8GHz{\sim}1.9GHz$, the stop band suppression of min -23dB was achieved. In the high frequency band of $4.1GHz{\sim}5.4GHz$, the stop band suppression of min -l8dB was obtained. It was the first embedded and the smallest one of the filters formed into the organic packaging substrate. It has a size of $2.2{\times}1.8{\times}0.77mm^3$.

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Design of a Taper-Underlaid Spot-Size Converter with an Offset

  • Choi, Jun-Seok;Oh, Jin-Kyong;Lee, Dong-Hwan;Lee, Hyung-Jong;Kim, Sang-Duk
    • Journal of the Optical Society of Korea
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    • v.11 no.1
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    • pp.40-43
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    • 2007
  • We propose a taper-underlaid spot-size converter (TU-SSC) with an offset which consists of two vertically stacked taper layers. The designed TU-SSC reduces coupling loss of a high index-contrast waveguide with $1.5%{\Delta}$ to a single mode fiber from 1.5 dB to 0.27 dB. We also considered the effects of mask misalignment in the fabrication process of TU-SSC, and optimized the design of TU-SSC so that the additional loss of TU-SSC for the mask misalignment of $3{\mu}m$ in the photo-lithography process was as low as 0.13 dB.

Changes in Chloroplast Ultrastructure and Thylakoid Membrane Proteins by High Light in Ginseng Leaves

  • Woo Kap Kim
    • Journal of Plant Biology
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    • v.37 no.3
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    • pp.285-292
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    • 1994
  • Ultrastructural changes in Panax ginseng C. A. Meyer mesophyll chloroplasts and variation of thylakoid membrane protein in responce to the light intensity were studied in leaves of two-y-old plants exposed to two different light intensities under field coditions. The leaves were allowed to function for three months after emergence under two contrasting light conditions. The ginseng chloroplasts of 5% light were filled with highly stacked grana of condensely arrayed thylakoids, so that the stroma space was hardly observed. In contrast, chloroplasts from leaves at 100% sunlight had fewer thylakoid membranes and smaller grana stacks. The number of osmiophilic globules increased. Total Chl content and Chl b content were lower at 100% sunlight than 5% sunlight. The thylakoid membrane proteins in the leaves grown at 100% sunlight showed lower CPIa, LHCII and CP29 than those with 5% sunlight. This effect was most obvious for LHCII. Polypeptides showed major bands at 90, 64, 29-30, 22 and 14 kD, and minor bands at 59, 58, 54, 52, 49, 46, 44, 35, 23, 21 and 18-19 kD. All these bands were lower in intensity in the leaves exposed to 100% sunlight. Moreover, the bands at 58-59, 46-47 and 23 kD disappeared.

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Investigation of threshold voltage change due to the influence of work-function variation of monolithic 3D Inverter with High-K Gate Oxide (고유전율 게이트 산화막을 가진 적층형 3차원 인버터의 일함수 변화 영향에 의한 문턱전압 변화 조사)

  • Lee, Geun Jae;Yu, Yun Seop
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2022.10a
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    • pp.118-120
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    • 2022
  • This paper investigated the change of threshold voltage according to the influence of work-function variation (WFV) of metal gate in the device structure of monolithic 3-dimension inverter (M3DINV). In addition, in order to investigate the change in threshold voltage according to the electrical coupling of the NMOS stacked on the PMOS, the gate voltages of PMOS were applied as 0 and 1 V and then the electrical coupling was investigated. The average change in threshold voltage was measured to be 0.1684 V, and they standard deviation was 0.00079 V.

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Dual-Polarized Annular Ring Patch Antenna for 2.4 GHz Doppler Radar

  • Kim, Seong-Ho;Yook, Jong-Gwan;Cho, Sung-Ho;Jang, Byung-Jun
    • Journal of electromagnetic engineering and science
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    • v.10 no.3
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    • pp.183-185
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    • 2010
  • A 2.4 GHz dual-polarized antenna for a Doppler radar is studied. The proposed dual-polarized antenna using a stacked annular ring patch with two co-centric gap-coupled feed lines and a $90^{\circ}$ hybrid exhibits fairly good performance of 22 dB isolation at a center frequency of 2.4 GHz. Using a $90^{\circ}$ hybrid, a right-handed circular polarization for the transmitter and a left-handed circular polarization for the receiver are implemented. The gain of the designed antenna is about 0 dBi over operating frequencies. The antenna size including a ground plane is only $40{\times}40\;mm^2$.

FR-4 Embedded UWB Filter using Uniform Impedance Resonator (임피던스 공진기를 이용한 FR-4 임베디드 광대역필터)

  • Yang, Chang-S.;Yoon, Sang-K.;Park, Jae-Y.
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.8
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    • pp.1471-1475
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    • 2007
  • In this paper, a novel embedded ultra wideband (UWB) band-pass filter is presented on a FR-4 package substrate including high Dk resin coated copper (${\varepsilon}_r=30$) film. The proposed UWB filter is comprised of a parallel resonator with meander-type uniform impedance resonator (UIR) and two series resonators with high Q circular stacked spiral inductor and metal-insulator-metal (MIM) capacitor. In order to obtain excellent attenuation characteristics by generating attenuation poles in lower and upper stop bands, a single MIM capacitor is added to each resonator. The fabricated FR-4 embedded UWB filter has insertion loss of -1.0dB and return loss of -11dB, respectively. It has also extremely wide bandwidth (over 50%) and small size ($3.7{\times}4{\times}0.77\;mm^3$) which is compatible with LTCC devices.

Ferrite-based wideband circularly polarized microstrip antenna design

  • Mashhadi, Mostafa;Komjani, Nader;Rejaei, Behzad;Ghalibafan, Javad
    • ETRI Journal
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    • v.41 no.3
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    • pp.289-297
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    • 2019
  • In this paper, a wideband, circularly polarized patch antenna is proposed that leverages the unidirectional resonant modes of a circular patch mounted on top of a grounded dielectric-ferrite substrate. The proposed antenna is fed via the proximity coupling method and several parasitically coupled patches are placed on a dielectric superstrate to enhance the impedance bandwidth of the antenna. The resonant modes of the structure rotate only in the clockwise or counter clockwise directions. In the frequency range where the effective permeability of the ferrite layer is negative, the resonance frequencies of these modes differ significantly, which produces a large axial ratio (AR) bandwidth. For the proposed antenna, the numerical results show the 10 dB impedance bandwidth to be around 44% and the 3 dB axial ratio bandwidth to be higher than 64%.

An Integrated High Linearity CMOS Receiver Frontend for 24-GHz Applications

  • Rastegar, Habib;Ryu, Jee-Youl
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.5
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    • pp.595-604
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    • 2016
  • Utilizing a standard 130-nm CMOS process, a RF frontend is designed at 24 GHz for automotive collision avoidance radar application. Single IF direct conversion receiver (DCR) architecture is adopted to achieve high integration level and to alleviate the DCR problem. The proposed frontend is composed of a two-stage LNA and downconversion mixers. To save power consumption, and to enhance gain and linearity, stacked NMOS-PMOS $g_m$-boosting technique is employed in the design of LNA as the first stage. The switch transistors in the mixing stage are biased in subthreshold region to achieve low power consumption. The single balanced mixer is designed in PMOS transistors and is also realized based on the well-known folded architecture to increase voltage headroom. This frontend circuit features enhancement in gain, linearity, and power dissipation. The proposed circuit showed a maximum conversion gain of 19.6 dB and noise figure of 3 dB at the operation frequency. It also showed input and output return losses of less than -10 dB within bandwidth. Furthermore, the port-to-port isolation illustrated excellent characteristic between two ports. This frontend showed the third-order input intercept point (IIP3) of 3 dBm for the whole circuit with power dissipation of 6.5 mW from a 1.5 V supply.