Luminescence Characteristics of Y2-xGdxO3:Eu3+ Thin film Grown by Pulsed Laser Ablation (PLD 방법으로 Si(100) 기판위에 증착한 Y2-xGdxO3:Eu3+/ 박막의 형광특성)
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- Journal of the Korean Institute of Electrical and Electronic Material Engineers
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- v.17 no.1
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- pp.112-117
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- 2004