• Electronics and Telecommunications Trends
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• v.38 no.6
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• pp.41-51
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• 2023

Heat dissipation technology for semiconductors and electronic packaging has a substantial impact on performance and lifespan, but efficient heat dissipation is currently facing limited improvement. Owing to the high integration density in electronic packaging, heat dissipation components must become thinner and increase their performance. Therefore, heat dissipation materials are being devised considering conductive heat transfer, carbon-based directional thermal conductivity improvements, functional heat dissipation composite materials with added fillers, and liquid-metal thermal interface materials. Additionally, in heat dissipation structure design, 3D printing-based complex heat dissipation fins, packages that expand the heat dissipation area, chip embedded structures that minimize contact thermal resistance, differential scanning calorimetry structures, and through-silicon-via technologies and their replacement technologies are being actively developed. Regarding dry cooling using single-phase and phase-change heat transfer, technologies for improving the vapor chamber performance and structural diversification are being investigated along with the miniaturization of heat pipes and high-performance capillary wicks. Meanwhile, in wet cooling with high heat flux, technologies for designing and manufacturing miniaturized flow paths, heat dissipating materials within flow paths, increasing heat dissipation area, and reducing pressure drops are being developed. We also analyze the development of direct cooling and immersion cooling technologies, which are gradually expanding to achieve near-junction cooling.

• Journal of Korean Ophthalmic Optics Society
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• v.6 no.1
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• pp.149-153
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• 2001

Three-dimensional thermoluminescence(TL) spectra of LiF: Mg, Cu, Na, Si TL material based on temperature, wavelength and intensity were measured and analyzed. The glow curves were obtained by integration of luminescence intensity for wavelength at each temperature, and various trapping parameters related to the trap formation were determined by analyzing these curves. Computerized glow curve deconvolution(CGCD) method which based on general order kinetics(GOK) model were used for the glow curve analysis. The glow curves of LiF:Mg, Cu, Na, Si TL material were deconvoluted to six isolated glow curves which have peak temperature at 333 K, 374 K, 426 K, 466 K, 483 K and 516 K, respectively. The 466 K main glow peak had an activation energy of 2.06 eV and a kinetic order of 1.05. This TL material was also found to have three recombination centers, 1.80 eV, 2.88 eV and 3.27 eV by TL spectra analysis based on Franck-Condon model. It showed that 2.88 eV is the dominant center, followed by 3.27 eV level, and 1.80 eV center is ascertained as emission center of this material even though its very weak emission intensity.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.1
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• pp.69-73
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• 2010

Finite-element analyses were conducted to investigate the thermal stress in 3-dimensional stacked wafers package containing through-silicon-via (TSV), which is being widely used for 3-Dimensional integration. With finite element method (FEM), thermal stress was analyzed with the variation of TSV diameter, bonding diameter, pitch and TSV height. It was revealed that the maximum von Mises stresses occurred at the edge of top interface between Cu TSV and Si and the Si to Si bonding site. As TSV diameter increased, the von Mises stress at the edge of TSV increased. As bonding diameter increased, the von Mises stress at Si to Si bonding site increased. As pitch increased, the von Mises stress at Si to Si bonding site increased. The TSV height did not affect the von Mises stress. Therefore, it is expected that smaller Cu TSV diameter and pitch will ensure mechanical reliability because of the smaller chance of plastic deformation and crack initiation.

• Land and Housing Review
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• v.6 no.2
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• pp.49-60
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• 2015

North Korean leader Kim Jong Un decided to open 19 Economic Development Zones which are located in all over the country, as a new economic development strategy. The strategy is estimated for accepting change from socialistic planning economic system into socialistic market economic system gradually. South Korean government is busy preparing for reunification between South and North Korea. Recently, many forums and seminars for the issue, 'reunification' are held by public side as well as private sector. This study is focused on making practical strategy for developing 13 Economic Development Zones which were established in 2013 in concurrence with South and North Korea. The study assessed investment potential of the 13 zones in terms of locational, economic and legal competency from the investor's perspective of south koreans. 5 E.D.Zs, Songrim, Hyungdong, Heungnam, Chungjin, Waudo were chosen to be developed on the preferential basis. Development cooperation between South and North Korea on the 13 E.D.Zs will increase the income of north koreans in rural areas by creating jobs, contribute to boost North Korea's economic growth, and bring forward economic integration between South and North Korea.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.176-177
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• 2013

Surface plasmon polaritons (SPPs) have attracted the attention of scientists and engineers involved in a wide area of research, microscopy, diagnostics and sensing. SPPs are waves that propagate along the surface of a conductor, usually metals. These are essentially light waves that are trapped on the surface because of their interaction with the free electrons of conductor. In this interaction, the free electrons respond collectively by oscillating in resonance with the light wave. The resonant interaction between the surface charge oscillation and the electromagnetic field of the light constitutes the SPPs and gives rise to its unique properties. In this papers, we studied theoretical and experimental extraordinary transmittance (T) and reflectance (R) of 2 dimensional metal hole array (2D-MHA) on GaAs in consideration of the diffraction orders. The 2d-MHAs was fabricated using ultra-violet photolithography, electron-beam evaporation and standard lift-off process with pitches ranging from 1.8 to $3.2{\mu}m$ and diameter of half of pitch, and was deposited 5-nm thick layer of titanium (Ti) as an adhesion layer and 50-nm thick layer of gold (Au) on the semiinsulating GaAs substrate. We employed both the commercial software (CST Microwave Studio: Computer Simulation Technology GmbH, Darmstadt, Germany) based on a finite integration technique (FIT) and a rigorous coupled wave analysis (RCWA) to calculate transmittance and reflectance. The transmittance was measured at a normal incident, and the reflectance was measured at variable incident angle of range between $30^{\circ}{\sim}80^{\circ}$ with a Nicolet Fourier transmission infrared (FTIR) spectrometer with a KBr beam splitter and a MCT detector. For MHAs of pitch (P), the peaks ${\lambda}$ max in the normal incidence transmittance spectra can be indentified approximately from SP dispersion relation, that is frequency-dependent SP wave vector (ksp). Shown in Fig. 1 is the transmission of P=2.2 um sample at normal incidence. We attribute the observation to be a result of FTIR system may be able to collect the transmitted light with higher diffraction order than 0th order. This is confirmed by calculations: for the MHAs, diffraction efficiency in (0, 0) diffracted orders is lower than in the (${\pm}x$, ${\pm}y$) diffracted orders. To further investigate the result, we calculated the angular dependent transmission of P=2.2 um sample (Fig. 2). The incident angle varies from 30o to 70o with a 10o increment. We also found the splitting character on reflectance measurement. The splitting effect is considered a results of SPPs assisted diffraction process by oblique incidence.

• Journal of electromagnetic engineering and science
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• v.9 no.2
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• pp.85-97
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• 2009

As operating frequency is raised and as more integration with active and passive elements is required, it becomes difficult to fabricate more than 120 ${\Omega}$ characteristic impedance of a mierostrip line. To solve this problem, an equivalent high impedance transmission-line section is suggested, which consists mainly of a pair of coupled-line sections with two shorts. However, it becomes a transmission-line section only when its electrical length is fixed and its coupling power is more than half. To have transmission-line characteristics(perfect matching), independently of coupling power and electrical length, two identical open stubs are added and conventional design equations of evenand odd-mode impedances are modified, based on the fact that the modified design equations have the linear combinations of conventional ones. The high impedance transmission-line section is a passive component and therefore should be perfectly matched, at least at a design center frequency. For this, two different solutions are derived for the added open stub and two types of high impedance transmission-line sections with 160 ${\Omega}$ characteristic impedance are simulated as the electrical lengths of the coupled-line sections are varied. The simulation results show that the determination of the available bandwidth location depends on which solution is chosen. As an application, branch-line hybrids with very weak coupling power are investigated, depending on where an isolated port is located, and two types of branch-line hybrids are derived for each case. To verify the derived branch-line hybrids, a microstrip branch-line hybrid with -15 dB coupling power, composed of two 90$^{\circ}$ and two 270$^{\circ}$ transmission-line sections, is fabricated on a substrate of ${\varepsilon}_r$= 3.4 and h=0.76 mm and measured. In this case, 276.7 ${\Omega}$ characteristic impedance is fabricated using the suggested high impedance transmission-line sections. The measured coupling power is -14.5 dB, isolation and matching is almost perfect at a design center frequency of 2 GHz, showing good agreement with the prediction.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.296-296
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• 2014

We investigate experimentally and theoretically the splitting of surface plasmon (SP) resonance peaks under TE- and TM-polarized illumination. The SP structure at infrared wavelength is fabricated with a 2-dimensional square periodic array of circular holes penetrating through Au (gold) film. In brief, the processing steps to fabricate the SP structure are as follows. (i) A standard optical lithography was performed to produce to a periodic array of photoresist (PR) circular cylinders. (ii) After the PR pattern, e-beam evaporation was used to deposit a 50-nm thick layer of Au. (iii) A lift-off processing with acetone to remove the PR layer, leading to final structure (pitch, $p=2.2{\mu}m$; aperture size, $d=1.1{\mu}m$) as shown in Fig. 1(a). The transmission is measured using a Nicolet Fourier-transform infrared spectroscopy (FTIR) at the incident angle from $0^{\circ}$ to $36^{\circ}$ with a step of $4^{\circ}$ both in TE and TM polarization. Measured first and second order SP resonances at interface between Au and GaAs exhibit the splitting into two branches under TM-polarized light as shown in Fig. 1(b). However, as the incidence angle under TE polarization is increased, the $1^{st}$ order SP resonance peak blue-shifts slightly while the splitting of $2^{nd}$ order SP resonance peak tends to be larger (not shown here). For the purpose of understanding our experimental results qualitatively, SP resonance peak wavelengths can be calculated from momentum matching condition (black circle depicted in Fig. 2(b)), $k_{sp}=k_{\parallel}{\pm}iG_x{\pm}jG_y$, where $k_{sp}$ is the SP wavevector, $k_{\parallel}$ is the in-plane component of incident light wavevector, i and j are SP coupling order, and G is the grating momentum wavevector. Moreover, for better understanding we performed 3D full field electromagnetic simulations of SP structure using a finite integration technique (CST Microwave Studio). Fig. 1(b) shows an excellent agreement between the experimental, calculated and CST-simulated splitting of SP resonance peaks with various incidence angles under TM-polarized illumination (TE results are not shown here). The simulated z-component electric field (Ez) distribution at incident angle, $4^{\circ}$ and $16^{\circ}$ under TM polarization and at the corresponding SP resonance wavelength is shown in Fig. 1(c). The analysis and comparison of theoretical results with experiment indicates a good agreement of the splitting behavior of the surface plasmon resonance modes at oblique incidence both in TE and TM polarization.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.8 no.1
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• pp.13-21
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• 1997

In this paper, the oscillator type active antenna used as an element of active phased array antenna is designed and fabricated using slot coupling. The radiating element and active circuit are fabricated on each layer respectively and coupled electromagnetically through slot on the ground plane. This structure can solve the problems such as narrow bandwidth of microstrip antenna, spurious radiation by active circuits, and spaces for integration of the feeding circuits which are caused by integrating antennas with oscillator circuits in the same layer. The active antenna in this paper, the oscillation frequency can be tuned linearly by controlling the drain bias voltage of FET. The frequency tuning range is between 12.37 GHz to 12.65 GHz when bias voltage is varied from 3V to 9V, thus frequency tuning bandwidth is 280 MHz (2.24%). The output power of antenna is uniform within 5dB over frequency tuning range. Therefore this active antenna can be used as an element of linear or planar active phased array antennas.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.2
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• pp.37-43
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• 1999

Modules of the system that requires large capacity and high-speed information processing are implemented in the form of MCM that allows high-speed data processing, high density circuit integration and widely applied to such fields as ATM, GPS and PCS. Hence we developed the ATM switching module that is consisted of three chips and 2.48 Gbps data throughput, in the form of 10 multi-layer by Cu/Photo-BCB and 491pin PBGA which size is $48 \times 48 \textrm {mm}^2$. hnologies required for the development of the MCM includes extracting parameters for designing the substrate/package through the interconnect characterization to implement the high-speed characteristics, thermal management at the high-density MCM, and the generation of the testability that is one of the most difficult issues for developing the MCM. For the development of the ATM Switching MCM, we extracted signaling delay, via characteristics and crosstalk parameters through the interconnect characterization on the MCM-D. For the thermal management of 15.6 Watt under the high-density structure, we carried out the thermal analysis. formed 1.108 thermal vias through the substrate, and performed heat-proofing processing for the entire package so that it can keep the temperature less than $85^{\circ}C$. Lastly, in order to ensure the testability, we verified the substrate through fine pitch probing and applied the Boundary Scan Test (BST) for verifying the complex packaging/assembling processes, through which we developed an efficient and cost-effective product.

• Asian-Australasian Journal of Animal Sciences
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• v.32 no.9
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• pp.1458-1468
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• 2019

Objective: As one of the most important metabolic organs, the liver plays vital roles in modulating the lipid metabolism. This study was to compare miRNA expression profiles of the Large White liver between two different developmental periods and to identify candidate miRNAs for lipid metabolism. Methods: Eight liver samples were collected from White Large of 70-day fetus (P70) and of 70-day piglets (D70) (with 4 biological repeats at each development period) to construct sRNA libraries. Then the eight prepared sRNA libraries were sequenced using Illumina next-generation sequencing technology on HiSeq 2500 platform. Results: As a result, we obtained 346 known and 187 novel miRNAs. Compared with the D70, 55 down- and 61 up-regulated miRNAs were shown to be significantly differentially expressed (DE). Gene ontology and Kyoto encyclopedia of genes and genomes enrichment analysis indicated that these DE miRNAs were mainly involved in growth, development and diverse metabolic processes. They were predicted to regulate lipid metabolism through adipocytokine signaling pathway, mitogen-activated protein kinase, AMP-activated protein kinase, cyclic adenosine monophosphate, phosphatidylinositol 3 kinase/protein kinase B, and Notch signaling pathway. The four most abundantly expressed miRNAs were miR-122, miR-26a and miR-30a-5p (miR-122 only in P70), which play important roles in lipid metabolism. Integration analysis (details of mRNAs sequencing data were shown in another unpublished paper) revealed that many target genes of the DE miRNAs (miR-181b, miR-145-5p, miR-199a-5p, and miR-98) might be critical regulators in lipid metabolic process, including acyl-CoA synthetase long chain family member 4, ATP-binding casette A4, and stearyl-CoA desaturase. Thus, these miRNAs were the promising candidates for lipid metabolism. Conclusion: Our study provides the main differences in the Large White at miRNA level between two different developmental stages. It supplies a valuable database for the further function and mechanism elucidation of miRNAs in porcine liver development and lipid metabolism.