• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2001년도 추계 학술발표강연 및 논문개요집
• /
• pp.155-155
• /
• 2001

• 한국결정성장학회지
• /
• 제10권1호
• /
• pp.13-16
• /
• 2000

Progress in Si crystal and wafer technologies is discussed on single crystal growth, wafer fabrication, epitaxial growth, gettering, 300 mm and SOI. As for bulk crystal growth, the mechanism of grown-in defects (voids) formation, the succes of grown-in defect free crystal growth technology and nitrogen doped crystal are shown. New wafer fabrication technologies such as both-side mirror polishing and etchingless process have been developed. The epitaxial growth of SiGe/Si heterostructure for high speed bipolar device is treated. Gettering technology under low temperature process such as RTP is important, and also it is shown that IG effect for Ni could be predicted using computer simulation of precipitate density and size. The development of 300 mm wafer and SOI has made progress steadily.

• 한국반도체및디스플레이장비학회:학술대회논문집
• /
• 한국반도체및디스플레이장비학회 2003년도 춘계학술대회 발표 논문집
• /
• pp.80-87
• /
• 2003

On this study, an End-Effector for the 300mm wafer transfer robot System is newly suggested. It is a mechanical type with $180^{\circ}$ rotating ranges and is composed of 3-point arms, two plate springs and single-axis DC motor. It is controlled by microchip for the DC motor control. To design, relationships on the gripping force and the wafer deformation is analyzed by FEM analysis. Criterion on gripping force of a suggested End-Effector is confirmed as $255 ~ 274g_f$ from experimental results. From experimented results on repeatable position accuracy, gripping force and gripping cycle times in a wafer cleaning system, we confirmed that the suggested End-Effector is well satisfied on the required performance for 300mm wafer transfer robot system.

• 정보처리학회논문지D
• /
• 제11D권2호
• /
• pp.461-470
• /
• 2004

반도체 업계에서는 200mm 반도체 웨이퍼 생산공정이 300mm 웨이퍼 생산공정으로 바뀜에 따라, 300mm 반도체 웨이퍼를 이동시키는 로봇을 모니터링하고 시뮬레이션하기 위한 소프트웨어 개발이 필요하다. 이런 소프트웨어는 독립적으로 동작하는 것이 아니라 MCS와 하위 시스템인 로봇과 통신하면서 실행되어야 하므로, 그 구성이 복잡하다. 그러므로, 이 시스템을 체계적으로 개발하기 위해서는 객체지향 개발 방법론인 UML을 적용할 필요성이 있다. 본 논문은 반도체 웨이퍼를 생산공정에서 이동시키는 로봇을 모니터링하고 시뮬레이션하기 위한 소프트웨어 개발에 UML 프로세스를 적용하였다. UML을 적용하여 UML을 기반으로 한 개발 프로세스 정의와 개발 단계별 업무들에 대한 구체적인 산출물들을 만들어 내었다.

• 공기청정기술
• /
• 제12권1호통권44호
• /
• pp.55-80
• /
• 1999

• 공기청정기술
• /
• 제14권4호통권55호
• /
• pp.40-59
• /
• 2001

• 제어로봇시스템학회:학술대회논문집
• /
• 제어로봇시스템학회 2002년도 ICCAS
• /
• pp.104.6-104
• /
• 2002

$\textbullet$ Contents 1 Introduction $\textbullet$ Contents 2 300mm OHT System $\textbullet$ Contents 3 function of OHT System $\textbullet$ Contents 4 Control Method $\textbullet$ Contents 5 Conclusion

• 반도체디스플레이기술학회지
• /
• 제19권2호
• /
• pp.77-81
• /
• 2020

Silicon wafer etching in micro electro mechanical systems (MEMS) fabrication is challenging to form 3-D structures. Well known Si-wet etch of silicon employs potassium hydroxide (KOH), tetramethylammonium hydroxide (TMAH) and sodium hydroxide (NaOH). However, the existing silicon wet etching process has a fatal disadvantage that etching of the back side of the wafer is hard to avoid. In this study, a wet etching bath for 150 mm wafers was designed to prevent back-side etching of silicon wafer, and we demonstrated the optimized process recipe to have anisotropic wet etching of silicon wafer without any damage on the backside. We also presented the design of wet bath for 300 mm wafer processing as a promising process development.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2011년도 춘계학술대회 및 Fine pattern PCB 표면 처리 기술 워크샵
• /
• pp.112-112
• /
• 2011

300 mm 웨이퍼용 도핑장치에서 2 MHz 유도결합 플라즈마와 8 kHz의 기판 바이폴라 펄스 바이어스에 의한 플라즈마에 대해 수치 계산이 수행되었다. 한 주기에서 0, -500, +100 V의 Pulse duration동안 기판 전체에 100, 500, 150 eV 부근의 이온 입사 에너지 분포를 보였으며, 이에 따라 기판 가장자리에서의 이온 입사 각도는 -30~+$30^{\circ}$ 사이에서 변화함으로서 도핑 불균일에 대한 원인을 확인하였다.

• 반도체디스플레이기술학회지
• /
• 제4권1호
• /
• pp.49-53
• /
• 2005

The nanoparticle deposition chamber, which is used for quantum dot semiconductor memory applications, is designed by means of numerical simulation. In this research, the numerical simulations for deposition chamber were performed by commercial software, FLUENT. The deposition of nanoparticles is calculated by diffusion force, thermophoresis and electrophoresis of particles. As a results, when the diffusion force was considered, the most of particles deposited in the wall of deposition chamber. But as considering thermophoresis and electrophoresis of particles, the particles were deposited wafer surface, perfectly.