• Proceedings of the KIEE Conference
• /
• 2004.07c
• /
• pp.1778-1780
• /
• 2004

Microwave heating system of KSTAR consists of ECH and LHCD. ECH and LHCD offer the reliability of operation in the beginning of plasma formation and non-inductive current drive for long time steady state operation with maintaining MHD stability, respectively. LHCD demands 5 GHz of frequency and consists of c-band waveguide, 4-port circuitor, dry dummy load, dual directional coupler, E-bend, arc detector. Our system is a lineup type pulse modulator that has 45 kV of output pulse voltage, 90 A of pulse current, 4 us of pulse width. 1:4 step-up pulse transformer, 7 stages of PFN and thyratron tube (E2V, CX1191D) are used in this modulator. The purpose of this paper is to show the modulator design and experimental result.

• Journal of electromagnetic engineering and science
• /
• v.6 no.3
• /
• pp.189-195
• /
• 2006

In this paper, the derivation of the protection ratio for the digital microwave system with diversity is newly suggested for a basic guidance of initial planning for frequency coordination, and computational results are presented for an actual radio frequency band. The net filter discrimination has been also examined to see the effect of the adjacent channel protection ratio caused by adjacent channel interference. In addition, the protection ratios for the space or frequency diversity system are analyzed in terms of diversity improvement factors to find out an equivalent allowable noise-to-interference ratio (N/I) from degraded fade margin. According to results for 6.2 GHz system, with the space diversity of 25 m distance between antennas or the frequency diversity of ${\Delta}f/f=0.05$, under 64-QAM and 60 km at BER $10^{-6}$, the protection ratio can be greatly reduced in comparison to the non-diversity system. So, assuming that only the same protection ratio as the non-diversity system is kept, it is shown that the system with diversity may get more interference level of N/I allowing from 9.0 to - 5.9 dB or from 6.0 to - 4.3 dB for the space or frequency diversity. In consequence, it is concluded that the diversity system is more robust or tolerable for interferences or fades, which may play an important role in overcoming N/I to some extent.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.11a
• /
• pp.221-224
• /
• 2000

The microwave dielectric properties of Ba(Mg$_{1}$3/Ta$_{2}$3/)O$_3$-xBa(Co$_{1}$3/Nb$_{2}$3/)O$_3$[BMT-BCN] ceramics were investigated. The specimens were prepared by the conventional mixed oxide method. It was found that Ba(Mg$_{1}$3/Ta$_{2}$3/)O$_3$ and Ba(Co$_{1}$3/Nb$_{2}$3/)O$_3$ formed a solid solution with complex perovskite structure. Increasing the BCN content, dielectric constant was increased, but temperature coefficient of resonant frequency was decreased. In the range of x$\geq$0.4, dielectric constant was about 30. 0.55BMT-0.45BCN ceramics showed excellent microwave dielectric properties with $\varepsilon$$_{r}$=30.84, Q$\times$f$_{0}$=75,325[GHz] and $\tau$$_{f}$=-2.9015[ppm/$^{\circ}C$].X>].

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.16 no.9
• /
• pp.862-876
• /
• 1991

In this theses, the procedure for finding the equivalent immittance of an n-line coupled structures is presented in terms of the normal mode parameters of the n-line coupled system. The above generalized equations can be applied to the various Coupled structures including directional couplers, DC blocks, bandpass/band elimination filters, and various other uniformly coupled filters. The design equations are based on a simplified TEM(Quasi TEM) mode. The obtained results and the definition of the scattering parameters for a general coupled line four port with arbitrary terminations are used to present the procedure to determine the optimum physical dimensions matching the given load impedances connected to input, output port. Multiple coupled rnicrostrip two-port with three lines circuit designed shows little discrepancy between the conventional method and this one. Four port with five lines were fabricated on teflon substrate($e$r=2.55) with its thickness h=l.588mm designed at the center frequency, 4 GHz. Their measured results are fairly close to the ones by computation.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.5 no.5
• /
• pp.994-1000
• /
• 2001

With the development of electromagnetic communication technology and increased use of electromagnetic wave, the countermeasure of EMI(Electromagnetic Interference) becomes more important socially, and interest for the electromagnetic wave absorber has also increased. In this paper, we have studied characteristics of frequency dependency on complex permittivity and complex permeability according to the changes of composition rate and sintering temperature of NiCuZn ferrite also known as electromagnetic wave absorber and further looked into effect of electromagnetic wave absorption properties. From the measurement where the composition of $Fe_2O_3$ and ZnO of NiCuZn ferrite was fixed at 49 and 34 mol% respectively while composition of NiO and CuO has been varied at each test, we found out that Initial permeability and permittivity were high and the absorbing ability of electromagnetic wave recorded best with $loss tangent(=\mur"/\mur')$ displays more than 1 within the frequency band of 2MHz~9.5MHz when the composition ratio of NiO was ranged around 8.5~9.5 mol% and the sintering temperature was $1080^{\circ}C$.TEX>.

• Journal of the Institute of Electronics Engineers of Korea TE
• /
• v.37 no.2
• /
• pp.83-90
• /
• 2000

A simple low-cost and small size 1.88-198 GHz Band RF power amplifier module is developed for IMT2000 repeater. The power amplifier consists of two stage amplifiers that the first stage amplifier is drive amplifier using discrete type P-HEMT (ATF-34143, 800 micron gate width, Agilent Technologies) and the second is power amplifier with 300Bm 1dB gain compression point using GaAs FET(EFA240D-SOT89, 2400 micron gate width, Excelics Semiconductor). this power amplifier module feature a 29.5dBm 1dB gain compression point, 29.5dB gain, 42dBm 3rd order intercept point(OIP3) and -10dB/-l2dB input/output return loss over the 1880-1980 MHz. This PA module is fully integrated using MIC technology into a small size and design by full nonlinear design technologies. The dimensions of this PA module are 42(L) $\times$ 34(W) mm.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.18 no.1 s.116
• /
• pp.62-75
• /
• 2007

This paper describes a shaped-beam antenna for increasing the antenna gain of a radiating element. The proposed antenna structure is composed of an exciting element and a multi-layered disk array structure(MDAS). The stack micro-strip patch elements were used as the exciter for effectively radiating the electromagnetic power to the MDAS over the broadband, and finite metallic disk array elements - which give the role of a director for shaping the antenna beam with the high gain - were finitely and periodically layered onto it. The efficient power coupling between the exciter and the MDAS should be carried out in such a way that the proposed antenna has a high gain characteristic. The design parameters of the exciter and the MDAS should be optimized together to meet the required specifications to meet the required specifications. In this study, a shaped-beam antenna with high gain was optimally designed under the operating conditions with a linear polarization and the frequency band of $9.6{\sim}10.4\;GHz$. Two methods constructed using thin dielectric film and dielectric foam materials respectively were also proposed in order to implement the MBAS of the antenna. In particular, through the computer simulation process, the electrical performance variations of the antenna with the MDAS realized by the thin dielectric film materials were shown according to the number of disk array elements in the stack layer. Two kinds of antenna breadboard with the MDAS realized with the thin dielectric film and dielectric foam materials were fabricated, but experimentation was conducted only on the antenna breadboard(Type 1) with the MDAS realized with the thin dielectric film materials according to the number of disk array elements in the stack layer in order to compare it with the electrical performance variations obtained during the simulation. The measured antenna gain performance was found to be in good agreement with the simulated one, and showed the periodicity of the antenna gain variations according to the stack layer number of the disk array elements. The electrical performance of the Type 1 antenna was measured at the center frequency of 10 GHz. As the disk away elements became the ten stacks, a maximum antenna gain of 15.65 dBi was obtained, and the measured return loss was not less than 11.4 dB within the operating band. Therefore, a 5 dB gain improvement of the Type 1 antenna can be obtained by the MDAS that is excited by the stack microstrip patch elements. As the disk array elements became the twelve stacks, the antenna gain of the Type 1 was measured to be 1.35 dB more than the antenna gain of the Type 2 by the outer dielectric ring effect, and the 3 dB beam widths measured from the two antenna breadboards were about $28^{\circ}$ and $36^{\circ}$ respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.42 no.8 s.338
• /
• pp.53-60
• /
• 2005

Recently, sub-micron CMOS technologies have taken the place of III-V materials in a number of areas in integrated circuit designs, in particular even for the applications of gjgabit optical communication applications due to its low cost, high integration level, low power dissipation, and short turn-around time characteristics. In this paper, a four-channel transimpedance amplifier (TIA) array is realized in a standard 0.35mm CMOS technology Each channel includes an optical PIN photodiode and a TIA incorporating the fully differential regulated cascode (RGC) input configuration to achieve effectively enhanced transconductance(gm) and also exploiting the inductive peaking technique to extend the bandwidth. Post-layout simulations show that each TIA demonstrates the mid-band transimpedance gain of 59.3dBW, the -3dB bandwidth of 2.45GHz for 0.5pF photodiode capacitance, and the average noise current spectral density of 18.4pA/sqrt(Hz). The TIA array dissipates 92mw p in total from a single 3.3V supply The four-channel RGC TIA array is suitable for low-power, high-speed optical interconnect applications.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.42 no.7 s.337
• /
• pp.63-70
• /
• 2005

We investigated the phase noise of an oscillator with a extremely high-Q resonator used as the resonant element. A TE$_{011}$ mode rutile-loaded resonator with high-temperature superconductive (HTS) $YBa_2Cu_3O_{7-\delta}$(YBCO) films used as the endplates is prepared for this purpose. At 23.5 K, the unloaded Q and the loaded Q are 863000 and 180000, respectively. The phase noise of -104.8 dBc/Hz at 1 KHz offset was observed for the oscillator having a resonator with $Q_{L}$ =180000 at the $TE_{01\delta$ mode resonant frequency of 8.545 GHz at 23.5 K Such oscillators with very low phase noise are expected to be used for building up communication systems capable of efficient use of the frequency band and high-speed data transmission as well as for Doppler radars. Frequency tuning could be realized for the resonator by using a piezoactuator Applicability of the tunable rutile resonator for fabricating tunable oscillators of high performances is discussed.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.15 no.5
• /
• pp.3139-3145
• /
• 2014

This paper describes the design of a size-reduced ring hybrid coupler for microwave band using an artificial dielectric substrate(ADS). ADS structure adopts the second substrate on which has lots of the metalized via-holes. The effective capacitance and effective dielectric constant per unit length of ADS increases compared to the normal substrate due to the via-holes. This enables the physical length of microstrip transmission line to be reduced by adopting ADS instead of the normal substrate. In order to present an example of size-reduction of microwave wireless circuit by ADS, a size-reduced 3GHz ring hybrid coupler is designed, fabricated and measured in this work. The designed coupler has the smaller size from the normal one by 65% due to the ADS, while no critical degradation from ideal performances is observed. The measured power division ratio at two output ports are -3.05dB and -3.135dB, respectively. In addition, the phase differences are 3o for in-phase division and 176o for out of phase split. The measured performances are so similar to ideal ones, and prove the design of size-reduced ring hybrid coupler using ADS is successful.