• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.6
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• pp.37-45
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• 1998

In this paper, we report the first three-dimensional simulation result of the transient enhanced diffusion(TED) of dopants in the ion-implanted silicon by employing our 3D semiconductor process simulator, INPROS system. In order to simulate three-dimensional TED redistribution of dopants in silicon, the dopant distributions after the ion implantation was calculated by Monte Carlo(MC) method, followed by finite element(FE) numerical solver for thermal annealing. Excellent agreement between the simulated 3D profile and the SIMS data has been obtained for ion-implanted arsenic and phosphorus after annealing the boron marker layer at 75$0^{\circ}C$ for 2 hours. Our three-dimensional TED simulation could successfully explain the reverse short channel effect(RSCE) by taking the 3D point defect distribution into account. A coupled TED simulation and device simulation allows reverse short channel effect on threshold to be accurately predicted.

• Nuclear Engineering and Technology
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• v.49 no.6
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• pp.1339-1345
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• 2017

In the framework of the EU funded project NURESAFE, the subchannel code CTF and the neutronics code DYN3D were integrated and coupled on the NURESIM platform. The developments achieved during this 3-year project include assembly-level and pin-by-pin multiphysics thermal hydraulics/neutron kinetics coupling. In order to test this coupling, a PWR rod ejection transient was simulated on a MOX/UOX minicore. The transient is simulated using two different models of the minicore. In the first simulation, both codes model the core with an assembly-wise resolution. In the second simulation, a pin-by-pin fuel-centered model is used in CTF for the central assembly, and a pin power reconstruction method is applied in DYN3D. The analysis shows the influence of the different models on global parameters, such as the power and the average fuel temperature, but also on local parameters such as the maximum fuel temperature.

• Proceedings of the KIEE Conference
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• 2002.07a
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• pp.232-234
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• 2002

A Vacuum Circuit Breaker Model for simulation of transient overvoltages was developed by using the PSCAD/EMTDC. The Model includes the power frequency chopping current. Breaker withstand voltage, and quenching capability of High frequency currents. To verify the abilities of the breaker model, the simulation on the Lindmayer's single-phase circuit was carried out. The results show that using the proposed model, the transient overvoltages, current chopping, and multiple reignitions of vacuum breaker are properly reproduced as real phenomena. In further study, virtual chopping current will be incorporated into the model for 3 phase system.

• Transactions of the Korean Society of Automotive Engineers
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• v.18 no.3
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• pp.60-68
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• 2010

In order to understand the flow and filtration characteristics in a wall-flow type DPF(Diesel Particulate Filter), 0-D, 1-D, and 3-D simulations are preformed. In this paper, three model are explained and validated with each other. Based on the comparisons with 1-D and 3-D results for the steady state solution, 3-D CFD analysis is preferable to 1-D for the prediction of wall velocity at the inlet and exit plane. Because PM loading process is transient state phenomena, the combination of full 3-D and time dependent simulation is crucial for the configuration of wall channels. New coupling technique, which is the connection between calculated permeability from 0-D lumped parameter model and UDF(User Defined Functions) of main solver, is proposed for the realisti

• Journal of Electrical Engineering and Technology
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• v.5 no.3
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• pp.415-422
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• 2010

The distributed flexible alternative current transmission system (D-FACTS) is a recently developed FACTS technology. Distributed Static Series Compensator (DSSC) is one example of DFACTS devices. DSSC functions in the same way as a Static Synchronous Series Compensator (SSSC), but is smaller in size, lower in price, and possesses more capabilities. Likewise, DSSC lies in transmission lines in a distributed manner. In this work, we designed a fuzzy logic controller to use the DSSC for enhancing transient stability in a two-machine, two-area power system. The parameters of the fuzzy logic controller are varied widely by a suitable choice of membership function and parameters in the rule base. Simulation results demonstrate the effectiveness of the fuzzy controller for transient stability enhancement by DSSC.

• Journal of Power Electronics
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• v.11 no.3
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• pp.375-380
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• 2011

A STATic synchronous COMpensator (STATCOM) is a shunt connected voltage source converter (VSC) based FACTS controller using Gate Turn Off (GTO) power semiconductor devices employed for reactive power control. The operation principal is similar to that of a synchronous condenser. A typical application of a STATCOM is voltage regulation at the midpoint of a long transmission line for the enhancement of power transfer capability and/or reactive power control at the load centre. This paper presents the modeling of STATCOM with twenty four pulse three level VSC and Type-1 controller to regulate the reactive current or the bus voltage. The performance is evaluated by transient simulation. It is observed that, the STATCOM shows excellent transient response to step change in the reactive current reference. While the eigenvalue analysis is based on D-Q model, the transient simulation is based on both D-Q and 3 phase models of STATCOM (which considers switching action of VSC).

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.9
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• pp.1611-1614
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• 2010

The explosion of a nuclear weapon radiates a gamma-ray in the form of a transient pulse. If the gamma-ray introduces to semiconductor devices, much Electron-Hole Pairs(EHPs) are generated in depletion region of the devices[7]. as a consequence of that, high photocurrent is created and causes upset, latchup and burnout of semiconductor devices[8]. This phenomenon is known for Transient Radiation Effects on Electronics(TREE), also called dose-rate effects. In this paper 3D structure of inverter and NAND gate device was designed and transient pulse gamma-ray was modeled. So simulation for transient radiation effect on inverter and NAND gate was accomplished and mechanism for upset and latchup was analyzed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.131-131
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• 2009

Silicon Carbide (SiC) is a material with a wide bandgap (3.26eV), a high critical electric field (~2.3MV/cm), a and a high bulk electron mobility ($\sim900cm^2/Vs$). These electronic properties allow high breakdown voltage, high-speed switching capability, and high temperature operation compared to Si devices. Although various SiC DMOSFET structures have been reported so far for optimizing performances, the effect of channel dimension on the switching performance of SiC DMOSFETs has not been extensively examined. This paper studies different channel dimensons ($L_{CH}$ : $0.5{\mu}m$, $1\;{\mu}m$, $1.5\;{\mu}m$) and their effect on the the device transient characteristics. The key design parameters for SiC DMOSFETs have been optimized and a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. has been used to understand the relationship. with the switching characteristics. To investigate transient characteristic of the device, mixed-mode simulation has been performed, where the solution of the basic transport equations for the 2-D device structures is directly embedded into the solution procedure for the circuit equations. We observe an increase in the turn-on and turn-off time with increasing the channel length. The switching time in 4H-SiC DMOSFETs have been found to be seriously affected by the various intrinsic parasitic components, such as gate-source capacitance and channel resistance. The intrinsic parasitic components relate to the delay time required for the carrier transit from source to drain. Therefore, improvement of switching speed in 4H-SiC DMOSFETs is essential to reduce the gate-source capacitance and channel resistance.

• Journal of the Optical Society of Korea
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• v.11 no.4
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• pp.153-157
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• 2007

We have proposed an application of disturbance observer with PID controller to minimize gain-transient time of wavelength-division-multiplexing(WDM) multi channels in optical amplifier in channel add/drop networks. We have dramatically reduced the gain-transient time to less than $3{\mu}sec$ by applying a disturbance observer with a proportional/integral/ differential(PID) controller to the control of amplifier gain. The theoretical analysis on the 3-level erbium-doped fiber laser and the disturbance observer technique is demonstrated by performing the simulation with co-simulation of the $MATLAB^{TM}$ and a numerical modeling software package such as the $Optsim^{TM}$.

• Journal of Electrical Engineering and Technology
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• v.7 no.3
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• pp.297-303
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• 2012

This paper presents the simulation results for the analysis of a lightning surge, switching transients and very fast transients within a thermal plant. The modeling of gas insulated substations (GIS) makes use of electrical equivalent circuits that are composed of lumped elements and distributed parameter lines. The system model also includes some generators, transformers, and low voltage circuits such as 24V DC rectifiers and control circuits. This paper shows the simulation results, via EMTP (Electro-Magnetic Transients Program), for three overvoltage types, such as transient overvoltages, switching transients, very fast transients and a lightning surge.