• Journal of the Korean institute of surface engineering
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• v.50 no.5
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• pp.339-344
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• 2017

Highly corrosion resistance performance of CrAlSiN coatings were obtained by applying ultrathin $Al_2O_3$ thin films using atomic layer deposition (ALD) method. CrAlSiN coatings were prepared on Cr adhesion layer/SUS304 substrates by a hybrid coating system of arc ion plating and high power impulse magnetron sputtering (HiPIMS) method. And, ultrathin $Al_2O_3$ passivation layer was deposited on the CrAlSiN/Cr adhesion layer/SUS304 sample to protect CrAlSiN coatings by encapsulating the whole surface defects of coating using ALD. Here, the high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and energy dispersive X-ray spectrometry (EDX) analysis revealed that the ALD $Al_2O_3$ thin films uniformly covered the inner and outer surface of CrAlSiN coatings. Also, the potentiodynamic and potentiostatic polarization test revealed that the corrosion protection properties of CrAlSiN coatings/Cr/SUS304 sample was greatly improved by ALD encapsulation with 50 nm-thick $Al_2O_3$ thin films, which implies that ALD-$Al_2O_3$ passivation layer can be used as an effect barrier layer of corrosion.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.156-157
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• 1998

It is a diffcult and challenging pproblem to control the growth of eppitaxial films. Heteroeppitaxy is esppecially idfficult because of the lattice mismatch between sub-strate and depposited layers. This mismatch leads usually to a three dimensional(3D) island growth. But the use of surfactants such as As, Sb, and Bi can be beneficial in obtaining high quality heteroeppitaxial films. In this study medium energy ion scattering sppectroscoppy(MEIS) was used in order to reveal the growth mode of Ge on Si(001) and the strain of depposited film without and with dynamically supplied atomic hydrogen at the growth thempperature of 35$0^{\circ}C$. It was ppossible to control the growth mode from layer-by-layer followed by 3D island to layer-by-layer by controlling the hydrogen flux. In the absent of hydro-gen the film grows in the layer-by-layer mode within the critical thickness(about 3ML) and the 3D island formation is followed(Fig1). The 3D island formation is suppressed by introducing hydrogen resulting in layer-by-layer growth beyond the critical thickness(Fig2) We measured angular shift of blocking dipp in order to obtain the structural information on the thin films. In the ppressence of atomic hydrogen the blocking 야 is shifted toward higher scattering angle about 1。. That means the film is distorted tetragonally and strained therefore(Fig4) In other case the shift of blocking dipp at 3ML is almost same as pprevious case. But above the critical thickness the pposition of blocking dipp is similar to that of Si bulk(Fig3). It means the films is relaxed from the first layer. There is 4.2% lattice mismatch between Ge and Si. That mismatch results in about 2。 shift of blocking dipp. We measured about 1。 shift. This fact could be due to the intermixing of Ge and Si. This expperimental results are consistent with Vegard's law which says that the lattice constant of alloys is linear combination of the lattic constants of the ppure materials.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1571-1572
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• 2009

Polymer solar cells were fabricated with gravure printing process and the effect of thermal annealing of gravure printed organic layer was investigated. The layer structure of polymer solar cells is glass / ITO / hole transfer layer / active layer / Al structure was fabricated. For the active layer, 1:1 ratio of poly-3-hexylthiophene (P3HT) and [6,6]-phenyl C61-butyric acid methyl ester (PCBM) mixture was applied. The P3HT/PCBM blend was gravure printed onto the substrates. The effect of thermal annealing was investigated by changing annealing time and the number of printing. Maximum 3.6% of power conversion efficiency was achieved with gravure printing of organic layer and thermal annealing in this work.

• Advances in aircraft and spacecraft science
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• v.3 no.3
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• pp.259-269
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• 2016

In this work results from an underwater experiment on flow-induced noise in the interior of a towed body generated from a surrounding turbulent boundary layer are presented. The measurements were performed with a towed body under open sea conditions at towing depths below 100 m and towing speeds ranging from 2.4 m/s to 6.2 m/s (4 kn to 12 kn). Focus is given in the experiments to the relation between (outer) wall pressure fluctuations and the (inner) hydroacoustic near-field on the reverse side of a flat plate. The plate configuration consists of a sandwich structure with an (thick) outer polyurethane layer supported by an inner thin layer from fibre-reinforced plastics. Parameters of the turbulent boundary layer are estimated in order to analyse scaling relations of wall-pressure fluctuations, interior hydroacoustic noise, and the reduction of pressure fluctuations through the plate.

• Journal of the Korean Society of Environmental Restoration Technology
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• v.12 no.1
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• pp.111-122
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• 2009

Abatements of TN and ${NO_3}^-$-N in a horizontal subsurface-flow wetland with litter layer on its surface were compared with those without one. The wetland was constructed in 2001 on floodplain of the Gwangju Stream which flows through Gwangju City in Korea. Its dimensions were 29m in length, 9m in width and 0.65m in depth. A bottom layer of 45cm was filled with crushed granites (15~40mm in diameter) and a middle layer of 10cm had pea pebbles. An upper layer of 5cm contained coarse sands. Reeds (Phragmites australis) growing in natural wetlands were transplanted on its surface. Water of the stream was channelled into the wetland by gravity flow and its effluent was discharged back into the stream. Average Litter layer of 12.2cm was formed on its surface in 2007. The layer and above-ground parts of reeds were eliminated in April 2008. Volumes and water quality of influent and effluent of the wetland were analyzed from May to November in 2007 and 2008, respectively. Inflow into the wetland both in 2007 and 2008 averaged approximately 40$m^3$/day and hydraulic residence time both in 2007 and 2008 was about 1.5days. Influent TN concentration in 2007 and 2008 averaged 3.96 and 3.89mg/L, respectively and average influent ${NO_3}^-$-N concentration in 2007 and 2008 was 2.11 and 2.05mg/L, respectively. With a 0.05 significance level, influent concentrations of TN and ${NO_3}^-$-N, temperatures and pH of effluent, and heights and stem numbers of reeds showed no difference between the wetland with litter layer and without one. TN retention in the wetland with litter layer and without one averaged 64,76 and 54.69%, respectively and ${NO_3}^-$-N removal averaged 60.83 and 50.61%, respectively. Both TN and ${NO_3}^-$-N abatement rates in the wetland with litter layer were significantly high (TN abatement: p<0,001, ${NO_3}^-$-N abatement: p=0.001) when compared with those without one. The subsurface-flow wetland having litter layer on its surface was more efficient for TN and ${NO_3}^-$-N removal.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.8
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• pp.222-227
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• 2020

Pb(Zr,Ti)O₃(denoted as PZT) in the perovskite phase is used as a dielectric, piezoelectric, and super appetizer material owing to its ferroelectric properties. A PZT film was formed by an RF magnetron sputtering process by preparing a target composed of Pb_1.3(Zr_0.52Ti_0.48)O₃. The PZT film was formed by dividing the material into a mono-layer PZT produced continuously with the same sputtering power and a bi-layer PZT produced with two-stage sputtering power. The bi-layer PZT consisted of a lower layer produced under low-power sputtering conditions and an upper layer produced under the same conditions as the mono-layer PZT. XRD revealed small amounts of pyrochlore phase in the mono-layer PZT, but only the perovskite phase was detected in the bi-layer PZT. SEM and AFM revealed the upper part of the bi-layer PZT to be more compact and smooth. Moreover, the bi-layered PZT showed superior symmetry polarization and a significantly reduced leakage current of less than 1×10-5 A/cm². This phenomenon observed in bi-layer PZT was attributed to the induction of growth into a pure perovskite phase by suppressing the formation of a pyrochlore phase in the upper PZT layer where the densely formed lower PZT layer was produced sequentially.

• Journal of the Semiconductor & Display Technology
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• v.21 no.1
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• pp.67-70
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• 2022

In order to prevent water vapor and oxygen permeation in the organic light emitting diodes (OLED), Al₂O₃ thin-film encapsulation (TFE) technology were investigated. Atomic layer deposition (ALD) method was used for making the Al₂O₃ TFE layer because it has superior barrier performance with advantages of excellent uniformity over large scales at relatively low deposition temperatures. In this study, the thickness of the Al₂O₃ layer was varied by controlling the numbers of the unit pulse cycle including Tri Methyl Aluminum(Al(CH₃)₃) injection, Ar purge, and H₂O injection. In this case, several process parameters such as injection pulse times, Ar flow rate, precursor temperature, and substrate temperatures were fixed for analysis of the effect only on the thickness of the Al₂O₃ layer. As results, at least the thickness of 39 nm was required in order to obtain the minimum WVTR of 9.04 mg/m²day per one Al₂O₃ layer and a good transmittance of 90.94 % at 550 nm wavelength.

• Journal of the Korean Ceramic Society
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• v.34 no.4
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• pp.373-379
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• 1997

A study on the deposition and characterization of BaTiO3 thin films on MgO-buffered Si(100) substrates by sputtering was conducted. The MgO buffer layers were investigated as a function of deposition temperature. At lower substrate temperature, the MgO layers were not fully crystalline, but a crystallized MgO layer with (001) preferred orientation was obtained at the substrate temperature of $700^{\circ}C$. Partially (00ι) or (h00) textured BaTiO3 films were obtained on Si(100) with the MgO buffer layer grown at 700ι. While, randomly oriented BaTiO3 films with large-scale cracks on the surface were made without the MgO layer. The crystallographic orientation, morphology and electrical properties between the BaTiO3 films on Si with and without the MgO layer were compared using the BaTiO3 film on MgO(100) single crystal substrate as a reference system. Also the favorable role of the MgO layer as a buffer for growing of oriented BaTiO3 films on Si substrates was confirmed.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.6
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• pp.1330-1334
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• 2012

The submarines reach their weakest point when they sail on the surface to operate snorkel and periscope. At this period, however, there lies a high possibility that the submarines are detected by non-acoustic sensors such as radars, IR signatures, and human observations. In this paper, the non-acoustic stealth was adopted on the mast and periscope of submarines so as to overcome their vulnerability of being easily detected in this given situation. First of all, the non-acoustic detection sensors were investigated and the stealth methods were analyzed. And multi-layered structures consisting of RAM layer, IR layer, and Camouflage layer were proposed on the surface of the submarine. As a results, multi-layered structure was suggested with 3~5 mm of a magnetic material such as ferrite for RAM layer, 1~2 mm of ceramic or nickel for IR layer, and sea-blue paint for Camouflage layer.

• Journal of the Korean Society for Heat Treatment
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• v.34 no.3
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• pp.107-115
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• 2021

Al-Si coated boron steel has been widely used as commercial hot stamping steel. When the steel is heated at 900~930℃ for 5 min in an electric furnace, thickness of the coating layer increases as a consequence of formation of intermetallic compounds and diffusion layer. The diffusion layer plays an important roll in blunting the propagation of crack from coating layer to base steel. Change in microstructure and coating layer of Al-Si coated boron steel after conductive heating with higher heating rate than electric furnace has been investigated in this study. Conductive-heated steel showed the martensitic structure with vickers hardness of 505~567. Both intermetallic compounds in coating layer and diffusion layer were not observed in conductive-heated steel due to rapid heating. It has been found that the conductive-heating consisting of rapid heating to 550℃ which is lower than melting point of Al-Si coating layer, slower heating to 900℃, and then 1 min holding at 900℃ is effective in forming intermetallic compound in coating layer and diffusion layer.