• 한국전기전자재료학회논문지
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• 제17권7호
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• pp.793-796
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• 2004

In order to improve c-axis crystalline orientation and high perpendicular coercivity of deposited ${Co}_77{Cr}_20{Ta}_3$perpendicualr recording layer, Two step method was investigated using a Facing Targets Sputtering System(FTS). The ${\Delta\theta}_50$ of ${Co}_77{Cr}_20{Ta}_3$recording layer deposited on seedlayer prepared at Room Temperature was as low as $5^\circ$, while that of the recording layer without seedlayer was about 11$^{\circ}$. The Two-Step method using ${Co}_77{Cr}_20{Ta}_3$seedlayer prepared at Room Temperature was shown to be very effective in controling the c-axis orientation of ${Co}_77{Cr}_20{Ta}_3$ recording layer with thin thickness.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.87-87
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• 2010

We report a new patterning technique of inorganic materials by using thin-film transfer printing (TFTP) with atomic layer deposition. This method consists of the atomic layer deposition (ALD) of inorganic thin film and a nanotransfer printing (nTP) that is based on a water-mediated transfer process. In the TFTP method, the Al2O3 ALD growth occurs on FTS-coated PDMS stamp without specific chemical species, such as hydroxyl group. The CF3-terminated alkylsiloxane monolayer, which is coated on PDMS stamp, provides a weak adhesion between the deposited Al2O3 and stamp, and promotes the easy and complete release of Al2O3 film from the stamp. And also, the water layer serves as an adhesion layer to provide good conformal contact and form strong covalent bonding between the Al2O3 layer and Si substrate. Thus, the TFTP technique is potentially useful for making nanochannels of various inorganic materials.

• 한국항공우주학회지
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• 제34권10호
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• pp.16-23
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• 2006

저 레이놀즈수에서 NACA 0012 에어포일의 경계층 거동에 관한 연구가 터빈 블레이드와 초소형 비행체에서 적용될 수 있는 경계층을 파악하기 위하여 수행되었다. 레이놀즈수 Re=$2.3{\times}10^4$, $3.3{\times}10^4$, $4.8{\times}10^4$과 정적 받음각 ${\alpha}$=$0^{\circ}$, $3^{\circ}$, $6^{\circ}$에서 경계층을 측정하기 위해 열선 풍속계가 사용되었다. 연구결과는 정적 받음각 =$0^{\circ}$에서는 층류 경계층이 에어포일 표면에 부착되며, 정적 받음각 $3^{\circ}$에서는 경계층 층류 분리가 발생된 것을 보여준다. 더욱이 본 연구에서 경계층 재부착 현상은 정적 받음각 $6^{\circ}$에서 레이놀즈수 $3.3{\times}10^4$와 $4.8{\times}10^4$에서 발생된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.534-537
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• 2002

We have studied conduction mechanism that is interpreted in terms of space charge limited current (SCLC) region and tunneling region. The OLEDs are based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) as a hole transport, tris (8- hydroxyquinolinoline) aluminum(III) $(Alq_3)$ as an electron injection and transport and emitting later, copper phthalocyanine (CuPc) and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and poly(vinylcarbazole) (PVK) as a buffer layer respectively. Al was used as cathode. We manufactured reference structure that has in ITO/TPD/$Alq_3$/Al. Buffer layer effects were compared to reference structure. And we have analyzed out luminance efficiency-voltage characteristics in ITO/Buffer layer/TPD/$Alq_3$/Al with buffer-layer materials.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.53-56
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• 2002

The effect of $\alpha$-septithiophene (${\alpha}-7T$) layers on the organic light emitting diode(OLED) was studied. The ${\alpha}-7T$ was used for a buffer layer in OLED. Hole injection was investigated and improved emission efficiency. The OLEDs structure can be described as indium tin oxide(ITO)/ buffer layer / hole transporting layer / emitting layer / electron transporting layer / LiF / Al. The hole transporting layer were composed of N,N-diphenyl-N,N-di(3-methylphenyl)-1,1-biphenyl-4,4-diamine(TPD), and N,N-di(naphthalene-1-ly)-N,N-diphenyl-benzidine( ${\alpha}$-NPD). The emitting layer, and electron transporting layer consist of tris(8-hydroxyquinolinato) aluminum($Alq_3$). All organic layer were deposited at a background pressure of less than $10^{-6}$ torr using ultra high vacuum (UHV) system. The ${\alpha}-7T$ layer can substitute the hole blocking layer, and improve hole injection properties.

• E2M - 전기 전자와 첨단 소재
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• 제7권3호
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• pp.231-235
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• 1994

The multi-dielectric layer $SiO_2$/$Si_3{N_4}$/$SiO_2$ (ONO) is used to improve charge retention and to scale down the memory device. The nitride layer of MNOS device is oxidize to form ONO system. During the oxidation of the nitride layer, the change of thickness of nitride layer and generation of interface state between nitride layer and top oxide layer occur. In this paper, effects of oxidation of the nitride layer is studied. The decreases of the nitride layer due to oxidation and trapping characteristics of interface state of multi layer dielectric film are investigated through the C-V measurement and F-N tunneling injection experiment using SONOS capacitor structure. Based on the experimental results, carrier trapping model for maximum flatband voltage shift of multi layer dielectric film is proposed and compared with experimental data. As a results of curve fitting, interface trap density between the top oxide and layer is determined as being $5{\times}10^11$~$2{\times}10^12$[$eV^1$$cm^2$].

• 한국콘텐츠학회논문지
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• 제8권1호
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• pp.272-281
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• 2008

3D 영상에 이펙트를 표현할 수 있는 레이어 채널을 삽입함으로써 애플리케이션 렌더링에 효과적으로 이용하도록 한다. 현재의 이펙트 렌더링은 영상과 이펙트의 개별 처리 및 혼합의 방식을 사용하기 때문에 저장 공간과 영상 처리에 있어서 개별 소스를 필요로 하고 있다. 그러나 영상과 레이어 채널을 하나로 묶어 처리함으로써 비용 절약과 영상 처리 면에서 큰 효과를 볼 수 있다. 개발은 영상에 레이어 채널을 삽입하기 위해서 영상 포맷의 변경, 레이어 채널이 나타나지 않도록 숨김 기능 추가, 영상 로드시 영상과 레이어 채널을 동시 접근 가능하도록 제어, 영상과 레이어 채널이 쉽게 혼합될 수 있도록 간편한 알파 블렌딩 처리 등의 방법으로 영상 포맷을 변경하여 레이어 채널을 숨기는 기법, 일반 영상 뷰어에서도 변경된 포맷의 영상을 볼 수 있도록 개발, 레이어 채널과 영상을 같이 묶음으로써 재사용성을 높이고 모든 프로그램에 이용 가능하도록 만든다. 그러면 영상 로드시에 영상과 레이어 채널을 동시에 불러드림으로써 처리 속도 향상시키고 3D 영상에 레이어 채널을 삽입함으로써 레이어 채널 영상을 위한 소스 저장 공간을 줄일 수 있다. 또한 3D 영상과 레이어 채널의 영상을 한 번에 다룰 수 있게 되어 효과적인 이펙트 표현 가능하고 실제 애플리케이션이 될 수 있는 멀티미디어 영상 등에 효과적으로 이용이 가능할 수 있을 것으로 기대한다.

• Journal of Welding and Joining
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• 제15권3호
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• pp.128-135
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• 1997

Reaction diffusion and formation of $Ni_3Al$phase with $L1_2$ structure have been studied in temperature range of 1432K to 1573K using the diffusion couple of (Ni-40, 5at%Al)/(Ni-14, 1at%Al) and (Ni-49, 2at%Al)/ (Nickel). The layer growth of Ni$_{3}$Al pyhase in the annealed diffusion couple was measured by optical microscope and electron probe microanalyzer (EPMA). The layer growth of $Ni_3Al$phase in diffusion zone obeyed the parabolic law without any indication of grain boundary effects. The layer growth of $Ni_3Al$phase in temperature range of 1423K to 1573K was mainly controlled by the volume diffusion mechanism. The rate of layer growth of $Ni_3Al$phase was found to be colsely related to the composition of intermetallic compound NiAl phase. The activation energy for layer growth of $Ni_3Al$phase was calculated to be 127kJ/mol.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.270-270
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• 2016

We fabricated an organic-inorganic nano laminated encapsulation layer using molecular layer deposition (MLD) combined with atomic layer deposition (ALD). The $Al_2O_3$ inorganic layers as an effective single encapsulation layer were deposited at 80 degree C using ALD with alternating surface-saturation reactions of TMA and $H_2O$. A self-assembled organic layers (SAOLs) were fabricated at the same temperature using MLD. MLD and ALD deposition process were performed in the same reaction chamber. The prepared SAOL-$Al_2O_3$ organic-inorganic nano laminate films exhibited good mechanical stability and excellent encapsulation property. The measurement of water vapor transmission rate (WVTR) was performed with Ca test. We controlled thickness-ratio of organic and inorganic layer, and specific ratio showed a lowest WVTR value. Also this encapsulation layer contained very few pin-holes or defects which were linked in whole area by defect test. To apply into real OLEDs panels, we controlled a film stress from tensile to compressive and flexibility defined as an elastic modulus with organic-inorganic ratio. It has shown that OLEDs panel encapsulated with nano laminate layer exhibits better properties than single layer encapsulated in acceleration conditions. These results indicate that the organic-inorganic nano laminate thin films have high potential for flexible display applications.

• 한국재료학회지
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• 제20권8호
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• pp.434-438
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• 2010

The selenization process has been a promising method for low-cost and large-scale production of high quality CIGS film. However, there is the problem that most Ga in the CIGS film segregates near the Mo back contact. So the solar cell behaves like a $CuInSe_2$ and lacks the increased open-circuit voltage. In this study we investigated the Ga distribution in CIGS films by using the $Ga_2Se_3$ layer. The $Ga_2Se_3$ layer was applied on the Cu-In-Ga metal layer to increase Ga content at the surface of CIGS films and to restrict Ga diffusion to the CIGS/Mo interface with Ga and Se bonding. The layer made by thermal evaporation was showed to an amorphous $Ga_2Se_3$ layer in the result of AES depth profile, XPS and XRD measurement. As the thickness of $Ga_2Se_3$ layer increased, a small-grained CIGS film was developed and phase seperation was showed using SEM and XRD respectively. Ga distributions in CIGS films were investigated by means of AES depth profile. As a result, the [Ga]/[In+Ga] ratio was 0.2 at the surface and 0.5 near the CIGS/Mo interface when the $Ga_2Se_3$ thickness was 220 nm, suggesting that the $Ga_2Se_3$ layer on the top of metal layer is one of the possible methods for Ga redistribution and open circuit voltage increase.