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A Study on Machine Failure Improvement Using F-RPN(Failure-RPN): Focusing on the Semiconductor Etching Process (F-RPN(Failure-RPN)을 이용한 장비 고장률 개선 연구: 반도체 식각 공정을 중심으로)

  • Lee, Hyung-Geun;Hong, Yong-Min;Kang, Sung-Woo
    • Journal of the Korea Safety Management & Science
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    • v.23 no.3
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    • pp.27-33
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    • 2021
  • The purpose of this study is to present a novel indicator for analyzing machine failure based on its idle time and productivity. Existing machine repair plan was limited to machine experts from its manufacturing industries. This study evaluates the repair status of machines and extracts machines that need improvement. In this study, F-RPN was calculated using the etching process data provided by the 2018 PHM Data Challenge. Each S(S: Severity), O(O: Occurence), D(D: Detection) is divided into the idle time of the machine, the number of fault data, and the failure rate, respectively. The repair status of machine is quantified through the F-RPN calculated by multiplying S, O, and D. This study conducts a case study of machine in a semiconductor etching process. The process capability index has the disadvantage of not being able to divide the values outside the range. The performance of this index declines when the manufacturing process is under control, hereby introducing F-RPN to evaluate machine status that are difficult to distinguish by process capability index.

Study on the Preparation of TiO2 3D Nanostructure for Photocatalyst by Wet Chemical Process (습식화학공정에 의한 광촉매용 TiO2 3차원 나노구조체 제조 연구)

  • Lee, Duk-Hee;Park, Jae-Ryang;Lee, Chan-Gi;Park, Kyoung-Tae;Park, Kyung-Soo
    • Journal of Powder Materials
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    • v.27 no.5
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    • pp.381-387
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    • 2020
  • In this work, TiO2 3D nanostructures (TF30) were prepared via a facile wet chemical process using ammonium hexafluorotitanate. The synthesized 3D TiO2 nanostructures exhibited well-defined crystalline and hierarchical structures assembled from TiO2 nanorods with different thicknesses and diameters, which comprised numerous small beads. Moreover, the maximum specific surface area of TiO2 3D nanostructures was observed to be 191 ㎡g-1, with concentration of F ions on the surface being 2 at%. The TiO2 3D nanostructures were tested as photocatalysts under UV irradiation using Rhodamine B solution in order to determine their photocatalytic performance. The TiO2 3D nanostructures showed a higher photocatalytic activity than that of the other TiO2 samples, which was likely associated with the combined effects of a high crystallinity, unique features of the hierarchical structure, a high specific surface area, and the advantage of adsorbing F ions.

A Study on the Energy Transfer of YAlO3:Tbx3+ using Decay Curves (YAlO3:Tbx3+에서 발광소멸 곡선을 이용한 에너지 전달에 관한 연구)

  • Kim, Gwang Chul;Choi, Jin Soo
    • Journal of the Semiconductor & Display Technology
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    • v.14 no.1
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    • pp.13-17
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    • 2015
  • $YAlO_3:Tb{_x}^{3+}$ has been synthesized by a combustion process and the concentration x of Tb was varied from 0.001 and 0.05 mol% per mole of YAlO3. The energy transfer of $^5D_3{\rightarrow}^7F_6$(385nm) and $^5D_4{\rightarrow}^7F_5$(544nm) transitions on the $YAlO_3:Tb{_x}^{3+}$(x =0.001, 0.05) have been investigated by using decay curves. The energy transfer mechanism was explained by Inokuti and Hirayama model. The results of calculation and fitting showed that values of n are 6.11(x=0.01) and 6.13(x=0.005). These indicate that the energy transfer mechanism between $Tb^{3+}$ ions is dipole-dipole interaction.

Effect of Water Management after Fertilizer Application on Fate and Efficiency of Applied Nitrogen (시식 후 물관리 방법이 실소의 동태 및 이용효율에 미치는 영향)

  • 이변우;명을재;최관호
    • KOREAN JOURNAL OF CROP SCIENCE
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    • v.40 no.2
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    • pp.157-166
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    • 1995
  • The fate and use efficiency of applied nitrogen were evaluated in a pot experiment with different fertilizers and water management practices during 30days after fertilizer application. N-P-K compound fertilizers, 13-10-1l(F-l) for upland Crop use and 15-10-10(F-3) for rice Crop use, and mixed fertilizer, 21-17-17(F-2) for basal dressing in rice were used. Fertilizers corresponding to 1.8g N were mixed thoroughly with the whole volume of sandy loam soil in a pot. The pots were flooded upto 3cm above soil surface for O(0dF), 10(10dF), 20(20dF), and 30(30dF) days after fertilizer application and all the treatments were flooded continuously from 30 days after fertilizer application. During the flooding period water percolation rate was adjusted to 2.5mm/day. Rice seedlings were transplanted 40 days after fertilizer application. The pH of infiltrated water increased with increasing duration of flooding. The pH of F-2 was higher than those of F-1 and F-3 between which there were no differences. The applied nitrogen remained 23% in F-1, 29% in F-2, and 29.1 % in F-3, and 45.0% in 0dF, 26.6% in 10dF, 24.8% in 20dF, and 20.3% in 30dF as inorganic nitrogen at 63 days after fertilizer application. Nitrogen losses by leaching amounted to 51.3%, 32.1% and 48.1% of applied nitrogen in F-1, F-2 and F-3, respectively. Nitrogen leaching losses increased with increasing duration of flood- ing, amounting to 25.7%, 29.8%, 32.7%, and 35.8% in 0dF, 10dF, 20dF and 30dF, respectively. Gaseous loss of applied nitrogen was greatest in F-2, followed by F-1 and F-3. Total loss of nitrogen due to gaseous volatilization and leaching was greatest in F -1, followed by F -2 and F-3, and were greater in the treatments with longer flooding after fertilizer application. Nitrogen recovery by rice shoot until 72 days after transplanting were 23.2%, 24.7% and 27.4% of applied nitrogen in F-1, F-2 and F-3, respectively and 34.1%, 25.5%, 21.1%, and 21.2% in 0dF, 10dF, 20dF and 30dF, respectively.

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The Crystal Structure of N-(Diphenylmethylene) aminomethylphosphonate (N-(Diphenylmethylene)aminomethylphosphonate의 결정 구조)

  • 김문집;박호종;김대영
    • Korean Journal of Crystallography
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    • v.13 no.2
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    • pp.86-90
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    • 2002
  • The structure of N-(Diphenylmethylene)aminomethylphosphonate has been determined by X-ray diffraction methods. The crystal system is triclinic, space group P(equation omitted), unit cell constants, a=8.967(2) (equation omitted), b=9.309(2) (equation omitted), c= 10.981(2) (equation omitted), α=101.42(2)°, β=92.22(2)°, γ=92.23(2)°, V=896.8(3) (equation omitted), T=296 K, Z=2, D/sub c/=1.227 Mgm/sup -3/. The intensity data were collected on an Enraf-Nonius CAD-4 Diffractometer with graphite monochromated MoKα radiation (λ=0.7107(equation omitted)). The molecular structure was solved by direct methods and refined by full-matrix least-squares to a final R=7.3% for 979 unique observed F/sub o/>4σ(F/sub o/) refections and 209 parameters.

Effects of Flux and Ta5+ Substitution on the Photoluminescence of Lu(Nb,Ta)O4:Eu3+ Phosphors (융제 및 Ta5+ 치환이 Lu(Nb,Ta)O4:Eu3+ 형광체의 발광 특성에 미치는 영향)

  • Kim, Jiwon;Kim, Young Jin
    • Korean Journal of Materials Research
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    • v.29 no.9
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    • pp.559-566
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    • 2019
  • $Lu(Nb,Ta)O_4:Eu^{3+}$ powders are synthesized by a solid-state reaction process using LiCl and $Li_2SO_4$ fluxes. The photoluminescence (PL) excitation spectra of the synthesized powders consist of broad bands at approximately 270 nm and sharp peaks in the near ultraviolet region, which are assigned to the $Nb^{5+}-O^{2-}$ charge transfer of $[NbO_4]^{3-}$ niobates and the f-f transition of $Eu^{3+}$, respectively. The PL emission spectra exhibit red peaks assigned to the $^5D_0{\rightarrow}^7F_J$ transitions of $Eu^{3+}$. The strongest peak is obtained at 614 nm ($^5D_0{\rightarrow}^7F_2$), indicating that the $Eu^{3+}$ ions are incorporated into the $Lu^{3+}$ asymmetric sites. The addition of fluxes causes the increase in emission intensity, and $Li_2SO_4$ flux is more effective for enhancement in emission intensity than is LiCl flux. The substitution of $Ta^{5+}$ for $Nb^{5+}$ results in an increase or decrease in the emission intensity of $LuNb_{1-x}Ta_xO_4:Eu^{3+}$ powders, depending on amount and kind of flux. The findings are explained using particle morphology, modification of the $[NbO_4]^{3-}$ structure, formation of substructure of $LuTaO_4$, and change in the crystal field surrounding the $Eu^{3+}$ ions.

Photoluminescence and Concentration Quenching Properties of BaMoO4:Tb3+ Phosphors (BaMoO4:Tb3+ 형광체의 발광과 농도 소광 특성)

  • Cho, Shinho;Kim, Jindae;Hwang, Donghyun;Cho, Seon-Woog
    • Korean Journal of Materials Research
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    • v.26 no.2
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    • pp.67-72
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    • 2016
  • $BaMoO_4:Tb^{3+}$ phosphor powders were synthesized with different concentrations of $Tb^{3+}$ ions using the solid-state reaction method. XRD patterns showed that all the phosphors, irrespective of the concentration of $Tb^{3+}$ ions, had tetragonal systems with two main (112) and (004) diffraction peaks. The excitation spectra of the $Tb^{3+}$-doped $BaMoO_4$ phosphors consisted of an intense broad band centered at 290 nm in the range of 230-330 nm and two weak bands. The former broad band corresponded to the $4f^8{\rightarrow}4f^75d^1$ transition of $Tb^{3+}$ ions; the latter two weak bands were ascribed to the $^7F_2{\rightarrow}^5D_3$ (471 nm) and $^7F_6{\rightarrow}^5D_4$ (492 nm) transitions of $Tb^{3+}$. The main emission band, when excited at 290 nm, showed a strong green band at 550 nm arising from the $^5D_4{\rightarrow}^7F_5$ transition of $Tb^{3+}$ ions. As the concentration of $Tb^{3+}$ increased from 1 to 10 mol%, the intensities of all the emission lines gradually increased, approached maxima at 10 mol% of $Tb^{3+}$ ions, and then showed a decreasing tendency with further increase in the $Tb^{3+}$ ions due to the concentration quenching effect. The critical distance between neighboring $Tb^{3+}$ ions for concentration quenching was calculated and found to be $12.3{\AA}$, which indicates that dipole-dipole interaction was the main mechanism for the concentration quenching of the $^5D_4{\rightarrow}^7F_5$ transition of $Tb^{3+}$ in the $BaMoO_4:Tb^{3+}$ phosphors.

Fabrication and Characterization of Thin Film Supercapacitor using $WO_3$ ($WO_3$를 이용한 박막형 슈퍼캐패시터의 제작 및 특성 평가)

  • 신호철;신영화;임재홍;윤영수
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.11a
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    • pp.575-578
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    • 2000
  • In this work, all solid-state thin film supercapacitor(TFSC) was fabricated using tungsten trioxide (WO$_3$) with a structure WO$_3$/LiPON/WO$_3$/Pt/TiO$_2$/Si (substrate). After TiO$_2$ was deposited on Si(100) wafer by d.c. reactive sputtering, the Pt current collector films were grown on TiO$_2$glue layer without breaking vacuum by d.c. sputtering. Fabrication conditions of WO$_3$ thin film were such that substrate temperature, working pressure, gas ratio of $O_2$/Ar and r.f. power were room temperature, 5 mTorr, 20% (O$_2$(8sccm)/Ar(32sccm)) and 200W, respectively. LiPON electrolyte film were grown on the WO$_3$ film using r.f. magnetron sputtering at room temperature. The XRD pattern of the as-deposited WO$_3$ thin film were shown no crystalline peak (amorphous). The SEM image of as-deposited WO$_3$ thin film showed that the surface is smooth and uniform. The capacitiy of as-fabricated TFSC was 0$\times$10$^{-2}$ F/$\textrm{cm}^2$-${\mu}{\textrm}{m}$.

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A Remote Control of 6 d.o.f. Robot Arm Based on 2D Vision Sensor (2D 영상센서 기반 6축 로봇 팔 원격제어)

  • Hyun, Woong-Keun
    • The Journal of the Korea institute of electronic communication sciences
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    • v.17 no.5
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    • pp.933-940
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    • 2022
  • In this paper, the algorithm was developed to recognize hand 3D position through 2D image sensor and implemented a system to remotely control the 6 d.o.f. robot arm by using it. The system consists of a camera that acquires hand position in 2D, a computer that controls robot arm that performs movement by hand position recognition. The image sensor recognizes the specific color of the glove putting on operator's hand and outputs the recognized range and position by including the color area of the glove as a shape of rectangle. We recognize the velocity vector of end effector and control the robot arm by the output data of the position and size of the detected rectangle. Through the several experiments using developed 6 axis robot, it was confirmed that the 6 d.o.f. robot arm remote control was successfully performed.

Electrical properties of $SrTiO_3$ thin films deposited at low temperatures by RF magnetron sputtering (RF 마그네트론 스퍼터링에 의해 저온 증착한 $SrTiO_3$ 박막의 전기적 특성)

  • 김동식;이재신
    • Journal of the Korean Vacuum Society
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    • v.5 no.4
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    • pp.359-364
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    • 1996
  • $SrTiO_3$ thin films were deposited on Pt/Ti/$SiO_2$/Si substrates at low temperatures below $300^{\circ}C$ by r.f. magnetron sputtering. The materials and the electrical properties of the deposited films were investigated with controlling deposition parameters such as substrate temperature(T_s) and positive substrate d.c. bias voltage. Stoichiometric $SrTiO_3$ films were obtained at Ts of $300^{\circ}C$, but Sr content in the film was less than that of a target when Ts was lower than $300^{\circ}C$, resulting in poor electrical properties. By introducing a positive substrate d.c. bias during deposition, the crystallinity and the dielectric properties of the films were markedly improved. 400 nm thick $SrTiO_3$, films deposited at $300^{\circ}C$ with a positive substrate d.c. bias of 20V showed a columnar structure with <211> crystallographic direction and a dielectric constant of 98.

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