• Korean Journal of Materials Research
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• v.21 no.10
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• pp.525-531
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• 2011

Two dimensional (2D) arrays of noble metal nanoparticles are widely used in the sensing of nanoscale biological and chemical events. Research in this area has sparked considerable interest in many fields owing to the novel optical properties, e.g., the localized surface plasmon resonance, of these metallic nanoarrays. In this paper, we report successes in fabricating 2D arrays of gold nano-islands using nanosphere lithography. The reproducibility and the effectiveness of the nano-patterning method are tested by means of spin coating and capillary force deposition. We found that the capillary force deposition method was more effective for nanospheres with diameters greater than 600 nm, whereas the spin coating method works better for nanospheres with diameters less than 600 nm. The optimal deposition parameters for both methods were reported, showing about 80% reproducibility. In addition, we characterize gold nano-island arrays both geometrically with AFM as well as optically with UV-VIS spectrometry. The AFM images revealed that the obtained nano-arrays formed a hexagonal pattern of truncated tetrahedron nano-islands. The experimental and theoretical values of the geometric parameters were compared. The 2D gold nano-arrays showed strong LSPR in the absorption spectra. As the nano-islands increased in size, the LSPR absorption bands became red-shifted. Linear dependence of the plasmon absorption maximum on the size of the gold nano-islands was identified through the increment in the plasmon absorption maximum rate for a one nanometer increase in the characteristic length of the nano-islands. We found that the 2D gold nano-arrays showed nearly seven-fold higher sensitivity of the absorption spectrum to the size of the nano-islands as compared to colloidal gold nano-particles.

• Bulletin of the Korean Chemical Society
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• v.27 no.4
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• pp.568-572
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• 2006

To study the effect of sequence on DNA structure, the two decamer crystal structures one alternating,d(GTACGCGTAC), and the other non-alternating, d(GGCCGCGGCC), were solved. Crystals of both decamers belong to the hexagonal space group $P6_122$, with one strand in the asymmetric unit. The unit cell constants of the alternating decamer are a = b = 39.26 $\AA$, c = 77.70 $\AA$. The structure was refined with 1,828 reflections from 8.0 to 2.0 Aresolution to an R value of 21.3% with all DNA atoms and 63 water molecules. The isomorphous non-alternating decamer had unit cell dimensions of a = b = 39.05 $\AA$, c = 82.15 $\AA$. The structure was refined with 2,423 reflections from 8.0 to 2.0 $\AA$ resolution to a final R value of 22.2% for all DNA atoms and 65 water molecules. Although the average helical parameters of the decamers are typical of A-DNAs, there are some minor differences between them. The helical twist, rise, x-displacement, inclination and roll alternate in the alternating decamer, but do not in the non-alternating decamer. The backbone conformations in both structures show some differences; the residue G(7) of the alternating decamer is trans for $\alpha$ and $\gamma$ while the trans conformations are observed at the residue G(8) of the non-alternating decamer.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.210-210
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• 2010

ABO2 형태를 가진 delafossite 구조 산화물은 p-type 투명전도체 소재로 유명하다. Delafossite 구조가 p-type 투명전도체에 적합한 결정적인 이유는 밴드갭이 넓고 공유결합에 유리하기 때문이다. 투명전도체는 가시광선의 흡수가 없도록 band gap을 넓히는 것이 우선인데 이러한 band gap이 넓은 구조가 delafossite이다. 또한 delafossite 구조는 구조적으로 각각의 산화물 이온들이 유사 사면체 배위(pseudo-tetrahedral coordination)을 갖는다. 이러한 사면체 배위결합구조에서 산소이온은 비결합면이 없기 때문에 더욱더 공유결합성을 향상시킬 것으로 생각된다. 여기서 A는 +1가 cation, B은 +3가 cation으로 구성되어 있다. A자리에는 1가 원소인 팔라듐, 플래티늄, 은, 구리 등을 가질 수 있고. B자리에 3가 원소이면서도 크기가 알루미늄보다는 크고 란타늄보다는 작은 금속이 들어갈 수 있다. Delafossite 구조는 상온에서 2종류의 polytype (상온에서 Rhombohedaral 구조와 hexagonal 구조)이 존재하며 이들은 각각 3R(Rm) 및2H (P63/mmc)의 결정 구조를 가지고 있다. CuCrO2는 일반적으로 3R결정구조를 가지는 것으로 알려져 있다. delafossite 구조는 전기적 이방성을 띄고 있는데 c-축 방향으로의 전기적 특성이 a-축 방향으로의 전기적 특성보다 약 1000배 높은 물성을 띈다고 한다. 이는 c-축 방향의 원자 위치 때문인데 CuCrO2의 경우 Cu-O-Cr-O-Cu로서 3d-2p-3d-2p-3d 궤도를 가지기 때문인 것으로 알려져 있다.[ref] 반면 c-축으로 에피성장된 박막의 경우 +3가 이온이 위치한 layer에서 hole hopping에 의해 캐리어가 전도된다고 알려져 있기도 하다. 본 연구에서는 PLD를 이용하여 c-plane 사파이어 기판위에 성장된 delafossite구조인 CuCrO2박막의 특성을 알아보았다. p-type 특성을 위하여 CuCrO2에 Ni를 첨가하였으며 그에 따른 구조적 전기적 특성을 조사하였다. 성장온도와 도핑농도를 변화시켜 특성을 연구하였다. 결정구조적 특성과 전기적 특성을 분석하려 한다.

• Journal of the Korean institute of surface engineering
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• v.35 no.6
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• pp.383-390
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• 2002

To investigate behaviors of Ti and O elements and microstructures of anodic titanium oxide films, the films were prepared by anodizing pure titanium in $H_2$S $O_4$, $H_3$P $O_4$, and $H_2O$$_2$ mixed solution at 180V. The microstructures and chemical states of the elements were analyzed using SEM, X-ray mapping, AFM, XRD, XPS (depth profile). The films formed on a titanium substrate showed porous layers which were composed of pore and wall, And with increasing anodizing time a hexagonal shape of cell structures were dominant and solace roughness increased. From the XRD result the structure of the Ti $O_2$ layer was anatase type of crystal on the whole. In the XPS spectra it was found that Ti and O were chemically binded in forms of Ti $O_2$, TiOH, $Ti_2$ $O_3$ at Ti 2p, and Ti $O_2$, $Ti_2$ $O_3$, $P_2$ $O_{5}$, S $O_4^{2-}$ at O ls respectively. Concentration of Ti $O_2$ decreased as the depth increased from the surface of the oxide film towards the substrate, but to the contrary concentrations of TiOH and $Ti_2$ $O_3$ increased.d.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.233-233
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• 2012

위상절연체(Bi2Te3)와의 격자상수 불일치 비율이 서로 다른 Si (111)와 Ge (111) 기판을 선택하여 Bi3Te3 박막의 성장 조건을 찾고 이에 따른 특성 분석을 수행하였다. 시료 제작은 초고진공 분위기에서 MBE를 이용하였고, AFM, XRD와 XPS로 각각 구조적 변화, 결정 상태 및 화학적 상태를 분석하였다. 우선 Si 위에 형성된 Bi2Te3의 경우, 초기 박막이 형성된 후, 증착 시간이 증가함에 따라 섬(island)모양의 구조물들이 step edge 부분에 분포되는 모습을 AFM 이미지에서 확인하였다. 형성된 박막의 스텝 단차는 약 1 nm 또는 이 값의 정수 배였고, 이것은 Bi2Te3 unit cell의 quintuple layer (QL) 값과 일치하였다. 또한 측정된 XRD pattern으로 Bi2Te3가 hexagonal 구조의 c-축에 따라 결정성이 이루어졌음을 확인할 수 있었다. XPS 스펙트럼에서는 Bi 4f가 높은 에너지 방향으로 2.3 eV, Te 3d는 낮은 에너지 방향으로 약 0.7 eV 만큼 구속 에너지의 화학적 이동이 나타남을 알 수 있었다. 이러한 결과는 Si 위에 Bi2Te3 박막이 높은 결정성을 가지고 형성되었다는 것을 의미한다. 또한 Si (111) 기판보다 Bi2Te3 결정과 격자상수 불일치의 비율이 상대적으로 작은 Ge (111)을 기판으로 하여 Bi2Te3 박막을 성장시켜 두 표면에서의 박막 성장의 특성을 비교, 논의할 것이다.

• Journal of Adhesion and Interface
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• v.7 no.3
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• pp.10-15
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• 2006

After anchoring 3-(2-aminoethylamino)propyltriethoxysilane (APTES) onto the surfaces of the channels within ordered mesoporous silica, SBA-15, we dispersed $Cu^{2+}$-perfluorophthalocyanine into the modified SBA-15 channels. From small-angle X-ray scattering (SAXS) patterns and transmission electron microscopy (TEM) images, we confirmed that both the calcined and $Cu^{2+}$-perfluorophthalocyanine-incorporated SBA-15 samples possessed ordered periodic structures and hexagonal symmetry lattices (p6mm). The value of the $d_{100}$ spacing was decreased after the incorporation of $Cu^{2+}$-perfluorophthalocyanine into the modified SBA-15 channels. We used FTIR and UV-Vis spectroscopy and thermogravimetric analysis (TGA) to characterize both the modified SBA-15 and the $Cu^{2+}$-perfluorophthalocyanine-incorporated SBA-15 samples. From scanning electron microscopy (SEM) images and $N_2$ sorption measurements, we found that the $Cu^{2+}$-perfluorophthalocyanine units were incorporated within the modified SBA-15 channels, rather than on the external surfaces of the modified SBA-15 channels.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1603-1605
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• 1997

$LiNiO_2$ is prepared by heating LiOH $H_2O$ and $Ni(OH)_2$ (mole ratio 1:1). In this study, we investigated X-ray diffraction, and charge/discharge property heat treatment condition and conductive agent sort and volume of $LiNiO_2$ prepared at various temperature and time. All $LiNiO_2$ prepared at this study showed hexagonal structure. In charge/discharge capacities, heated at $O_2$ than air and $750^{\circ}C$ than $700^{\circ}C$, specific capacity is higher. Therefore, when preliminary heat at $650^{\circ}C$ $O_2$ and heat at $750^{\circ}C$ carried out, charge/discharge property is best.

• Journal of Photoscience
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• v.9 no.2
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• pp.110-113
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• 2002

We demonstrate here a dynamic structure of bacteriorhodopsin (bR) as revealed by $^{13}$ C NMR studies on [3_$^{13}$ C]_,[1-$^{13}$ C]Ala- and/or Val-labeled wild type and a variety of site-directed mutants at ambient temperature. For this purpose, well-resolved (up to twelve) I$^{13}$ C NMR peaks were assigned with reference to the displacement of peaks due to the conformation-dependent I$^{13}$ C chemical shifts and reduced peak-intensities due to site-directed mutations. Revealed bR structure was not rigid as anticipated from 2D crystals of hexagonal array but a dynamically heterogeneous, undergoing a variety of local fluctuations depending upon specific site with frequency range of 10$^2$ -10$^{8}$ Hz. In particular, dynamics- dependent suppression of peaks turned out to be very sensitive to the motion of 10$^{-4}$ s and 10$^{-5}$ s interfered with frequency of magic angle spinning and proton decoupling, respectively. It is also noteworthy that such dynamic feature is strongly dependent upon the manner of 2D crystalline packing: $^{13}$ C NMR peaks of monomeric bR yielded either highly broadened or completely suppressed signals, depending upon the type of $^{13}$ C-labeled amino-acid residues.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.284-284
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• 2016

Topological insulator (TI) is a bulk-insulating material with topologically protected Dirac surface states in the band gap. In particular, $Bi_2Se_3$ attracted great attention as a model three-dimensional TI due to its simple electronic structure of the surface states in a relatively large band gap (~0.3 eV). However, experimental efforts using $Bi_2Se_3$ have been difficult due to the abundance of structural defects, which frequently results in the bulk conduction being dominant over the surface conduction in transport due to the bulk doping effects of the defect sites. One promising approach in avoiding this problem is to reduce the structural defects by heteroepitaxially grow $Bi_2Se_3$ on a substrate with a compatible lattice structure, while also preventing surface degradation by encapsulating the pristine interface between $Bi_2Se_3$ and the substrate in a clean growth environment. A particularly promising choice of substrate for the heteroepitaxial growth is hexagonal boron nitride (h-BN), which has the same two-dimensional (2D) van der Waals (vdW) layered structure and hexagonal lattice symmetry as $Bi_2Se_3$. Moreover, since h-BN is a dielectric insulator with a large bandgap energy of 5.97 eV and chemically inert surfaces, it is well suited as a substrate for high mobility electronic transport studies of vdW material systems. Here we report the heteroepitaxial growth and characterization of high quality topological insulator $Bi_2Se_3$ thin films prepared on h-BN layers. Especially, we used molecular beam epitaxy to achieve high quality TI thin films with extremely low defect concentrations and an ideal interface between the films and substrates. To optimize the morphology and microstructural quality of the films, a two-step growth was performed on h-BN layers transferred on transmission electron microscopy (TEM) compatible substrates. The resulting $Bi_2Se_3$ thin films were highly crystalline with atomically smooth terraces over a large area, and the $Bi_2Se_3$ and h-BN exhibited a clear heteroepitaxial relationship with an atomically abrupt and clean interface, as examined by high-resolution TEM. Magnetotransport characterizations revealed that this interface supports a high quality topological surface state devoid of bulk contribution, as evidenced by Hall, Shubnikov-de Haas, and weak anti-localization measurements. We believe that the experimental scheme demonstrated in this talk can serve as a promising method for the preparation of high quality TI thin films as well as many other heterostructures based on 2D vdW layered materials.

• Journal of the Korean Electrochemical Society
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• v.8 no.2
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• pp.94-98
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• 2005

Coptp films with the additive elements (X=Fe, Mn) of varying concentrations were prepared by in-situ electrodeposition, to tailor their magnetic properties. Alloys of CoPtP-X (X=Fe, Mn) were synthesized by changing the solution concentrations of Fe and Mn for electrodeposition. In the electrodeposited CoFePtP alloys, preferred orientation of the electrodeposited films changed from hexagonal (001) to (100) direction with increasing iron contents as revealed by X-ray diffraction, and these films exhibited various magnetic properties ranging from a typical hard magnetic to a soft magnetic property in accordance with microstructural variations. In the case of Mn addition, excellent hard magnetic property was observed at a specific Mn concentration of 0.0126 M in the electrolyte, with the coercivity of 4630 Oe and squareness of 0.856 and this was attributed to the fact that magnetization easy-axis (hexagonal c-axis) coincides with the preferred growth orientation of the film confirmed by transmission electron microscopy.