• 제목/요약/키워드: 2D photodetector

검색결과 31건 처리시간 0.02초

Design Optimization of Hybrid-Integrated 20-Gb/s Optical Receivers

  • Jung, Hyun-Yong;Youn, Jin-Sung;Choi, Woo-Young
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제14권4호
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    • pp.443-450
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    • 2014
  • This paper presents a 20-Gb/s optical receiver circuit fabricated with standard 65-nm CMOS technology. Our receiver circuits are designed with consideration for parasitic inductance and capacitance due to bonding wires connecting the photodetector and the circuit realized separately. Such parasitic inductance and capacitance usually disturb the high-speed performance but, with careful circuit design, we achieve optimized wide and flat response. The receiver circuit is composed of a transimpedance amplifier (TIA) with a DC-balancing buffer, a post amplifier (PA), and an output buffer. The TIA is designed in the shunt-feedback configuration with inductive peaking. The PA is composed of a 6-stage differential amplifier having interleaved active feedback. The receiver circuit is mounted on a FR4 PCB and wire-bonded to an equivalent circuit that emulates a photodetector. The measured transimpedance gain and 3-dB bandwidth of our optical receiver circuit is 84 $dB{\Omega}$ and 12 GHz, respectively. 20-Gb/s $2^{31}-1$ electrical pseudo-random bit sequence data are successfully received with the bit-error rate less than $10^{-12}$. The receiver circuit has chip area of $0.5mm{\times}0.44mm$ and it consumes excluding the output buffer 84 mW with 1.2-V supply voltage.

GaN를 이용한 Schottky diode형 자외선 수광소자의 제작 (Fabrication of a Schottky Type Ultraviolet Photodetector Using GaN Layer)

  • 성익중;이석헌;이채향;이용현;이정희;함성호
    • 전자공학회논문지D
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    • 제36D권6호
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    • pp.28-34
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    • 1999
  • 본 논문에서는 GaN 박막 위에 각각 알루미늄(Al)과 백금(Pt)을 증착하여 저항성 전극 및 투명한 schottky 전극을 형성한 평면형 자외선 수광소자를 제작하였다. 제작된 소자에 대해 전기적 특성과 광학적 특성을 조사하여 자외선 센서로서의 적합성을 검토하였다. 사파이어 기판위에 성장된 GaN 박막은 $7.8{\times}10^{16}cm^{-3}$의 도핑(doping)농도와 $138 cm^2/V{\cdot}s$의 이동도(mobility)를 가졌으며, 파장이 365 nm 이하인 빛만을 흡수하는 자외선 감지막 특성을 나타내었다. 5 V의 역방향 전압을 인가하였을 때 제조된 schottky형 자외선 센서는 325 nm의 자외선 파장에서 응답도가 2.84 A/W였고, $4{\times}10^4$의 큰 신호대 잡음비(SNR)의 $3.5{\times}10^9$W의 잡음등가전력(NEP)을 나타내었다. 따라서 이들 결과로부터 GuN를 이용한 schottky 다이오드가 가시광 차단 UV photodetector를 제조할 수 있음을 확인하였다.

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A Wide Dynamic Range CMOS Image Sensor Based on a Pseudo 3-Transistor Active Pixel Sensor Using Feedback Structure

  • Bae, Myunghan;Jo, Sung-Hyun;Lee, Minho;Kim, Ju-Yeong;Choi, Jinhyeon;Choi, Pyung;Shin, Jang-Kyoo
    • 센서학회지
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    • 제21권6호
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    • pp.413-419
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    • 2012
  • A dynamic range extension technique is proposed based on a 3-transistor active pixel sensor (APS) with gate/body-tied p-channel metal oxide semiconductor field effect transistor (PMOSFET)-type photodetector using a feedback structure. The new APS consists of a pseudo 3-transistor APS and an additional gate/body-tied PMOSFET-type photodetector, and to extend the dynamic range, an NMOSFET switch is proposed. An additional detector and an NMOSFET switch are integrated into the APS to provide negative feedback. The proposed APS and pseudo 3-transistor APS were designed and fabricated using a $0.35-{\mu}m$ 2-poly 4-metal standard complementary metal oxide semiconductor (CMOS) process. Afterwards, their optical responses were measured and characterized. Although the proposed pixel size increased in comparison with the pseudo 3-transistor APS, the proposed pixel had a significantly extended dynamic range of 98 dB compared to a pseudo 3-transistor APS, which had a dynamic range of 28 dB. We present a proposed pixel that can be switched between two operating modes depending on the transfer gate voltage. The proposed pixel can be switched between two operating modes depending on the transfer gate voltage: normal mode and WDR mode. We also present an imaging system using the proposed APS.

수소화 처리된 InAs/GaAs 양자점 적외선 수광소자의 전기적 특성 (Electrical Property in InAn/GaAs Quantum Dot Infrared Photodetector with Hydrogen Plasma Treatment)

  • 남형도;송진동;최원준;조운조;이정일;최정우;양해석
    • 한국진공학회지
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    • 제15권2호
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    • pp.216-222
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    • 2006
  • InGaAs/GaAs 양자 우물 내에 삽입된 InAs 양자점으로 구성된 5층의 흡수층과 $Al_{0.3}Ga_{0.7}As/GaAs$ SL (superlattice) 암전류 장벽층을 갖는 QDIP (quantum dot infrared photodetector) 구조에 대한 수소 RF 플라즈마에 의한 수소화 처리가 QDIP의 전기적. 광학적 특성에 미치는 영향에 대해 연구하였다. RF 플라즈마 수소화 처리는 양자점의 밴드구조에 영향을 미치지 않았으며 $Al_{0.3}Ga_{0.7}As/GaAs$ SL 암전류 장벽층 내의 결함 제거 및 QDIP 구조 내 결함 생성을 동시에 유도함으로써 QDIP의 전기적 특성 향상은 수소 플라즈마 처리시간의 함수임을 알았다. 20 W의 수소 RF 플라즈마를 사용했을 때, 10분간의 플라즈마 조사가 가장 좋은 전기적 특성을 제공하여 높은 암전류 때문에 원시료에서는 측정 할 수 없었던 광전류 신호를 측정 할 수 있었다.

Nonlinear Microwave Performance of an Optoelectronic CPW-to-Slotline Ring Resonator on GaAs Substrate

  • Lee, Jong-Chul
    • Journal of Electrical Engineering and information Science
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    • 제2권3호
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    • pp.95-98
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    • 1997
  • A nonlinear optical-microwave interaction is carried out in an uniplanar CPW-to-Slotline ring resonator on the semi-insulating GaAs substrate, in which a Schottky photodetector is monolithically integrated as a coupling gap. When the capacitive reactance of the detetor is modulated, the parametric amplification effect of the mixer occurs. In this device structure, the parametric amplification gain of 20 dB without the applied bias in RF signal is obtained. This microwave optoelectronic mixer can be used in the fiber-optic communication link.

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InAs/GaSb 응력초격자를 이용한 적외선검출소자의 제작 및 특성 연구 (Fabrication and Device Characteristics of Infrared Photodetector Based on InAs/GaSb Strained-Layer Superlattice)

  • 김준오;신현욱;최정우;이상준;김창수;노삼규
    • 한국진공학회지
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    • 제18권2호
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    • pp.108-115
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    • 2009
  • 150 주기의 InAs/GaSb (8/8-ML) 제2형 응력초격자 (SLS)를 활성층에 탑재한 초격자 적외선검출소자 (SLIP) 구조를 MBE 방법으로 성장하고, 직경 $200{\mu}m$의 개구면을 가지는 SLIP 개별소자를 시험 제작하였다 고분해능 투과전자현미경 (TEM) 이미지의 휘도분포와 X선회절 (XRD) 곡선의 위성피크의 분석 결과는 SLS 활성층은 균일한 층두께와 주기적 응력변형을 유지하는 급격한 계면의 초격자임을 입증하였다. 흑체복사 적외선 광원을 이용하여 측정한 입사파장 및 인가전압에 따른 반응도 (R)와 검출률 ($D^*$)로부터, 차단파장은 ${\sim}5{\mu}m$이고 최대 R과 $D^*$ ($\lambda=3.25{\mu}m$)는 각각 ${\sim}10^3mA/W$ (-0.6 V/13 K)와 ${\sim}10^9cm.Hz^{1/2}/W$ (0 V/13 K)임을 보였다. 반응도의 온도의존성으로부터 분석한 활성화에너지 275 meV는 광반응 과정에 개입되어 있는 가전대 및 전도대 부준위 사이의 에너지 간격 (HH1-C)과 잘 일치하였다.

데이터센터 통신용 광소자 및 광부품 기술 동향 (Technology Trends of Optical Devices and Components for Datacenter Communications)

  • 한영탁;이동훈;김덕준;신장욱;이서영;윤석준;백용순
    • 전자통신동향분석
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    • 제37권2호
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    • pp.42-52
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    • 2022
  • Intra- and inter- datacenter data traffic is rapidly increasing due to the spread of smart devices, cloud computing, and non-face-to-face services. Recently, 400-Gbps optical transceivers based on 100-Gbps/channel have been released primarily by major overseas companies. Various solutions for next-generation datacenter interconnect are being proposed by international standardization and multiple source agreement groups. Following this trend, ETRI has developed a 400-Gbps optical transmission/reception engine using 100-Gbps/channel light sources and photodetectors as well as a silica-based AWG. In the future, technologies of optical devices and components for intra-datacenter communication are expected to be developed based on a data rate of 200-Gbps/channel. Thus, 1.6-Tbps class optical transceivers will be released.

Herschel-PACS Observations of YSOs

  • 이진희;이정은
    • 천문학회보
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    • 제36권1호
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    • pp.84.1-84.1
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    • 2011
  • We observed several young stellar objects (YSOs) using the Photodetector Array Camera and Spectrometer (PACS) aboard the Herschel Space Observatory. CO, OH, $H_2O$, [O I], and [C II] lines were detected. CO rotational diagrams show two distinct gas components of ~400 K and ~1000 K with a break around 1500 K of the CO excitation energy, indicative of two different heating mechanisms: PDR and outflow shocks. OH and $H_2O$ line fluxes can be fitted with temperatures different from what are derived from the CO rotational diagrams. In order to understand the physical environment of line formation, the sources were modeled with the 3-D radiative transfer code, LIME. We present the results of observations, simple analysis, and modeling of Herschel-PACS spectra of the YSOs.

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가시광통신 시스템에서 2색 LED를 이용한 잡음광의 영향 감소 (Reducing the Effects of Noise Light in a Visible Light Communication System Using Two Color LEDs)

  • 이성호
    • 센서학회지
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    • 제21권6호
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    • pp.429-433
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    • 2012
  • In this paper, we reduced the optical noise interference in a visible light communication system using two color LEDs. In the transmitter, the original and the inverted signals of the transmitted data modulated a red LED and a blue LED, respectively. In the receiver, a differential detector which is composed of two photodetectors and an optical red filter detected the mixed signal radiated from the two LEDs. In an environment that the optical noise from a fluorescent lamp exists, the signal-to-noise ratio in this system was improved by about 20dB compared to that in the conventional system which uses a single LED and a single photodetector.

SPAD과 CNN의 특성을 반영한 ToF 센서와 스테레오 카메라 융합 시스템 (Fusion System of Time-of-Flight Sensor and Stereo Cameras Considering Single Photon Avalanche Diode and Convolutional Neural Network)

  • 김동엽;이재민;전세웅
    • 로봇학회논문지
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    • 제13권4호
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    • pp.230-236
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    • 2018
  • 3D depth perception has played an important role in robotics, and many sensory methods have also proposed for it. As a photodetector for 3D sensing, single photon avalanche diode (SPAD) is suggested due to sensitivity and accuracy. We have researched for applying a SPAD chip in our fusion system of time-of-fight (ToF) sensor and stereo camera. Our goal is to upsample of SPAD resolution using RGB stereo camera. Currently, we have 64 x 32 resolution SPAD ToF Sensor, even though there are higher resolution depth sensors such as Kinect V2 and Cube-Eye. This may be a weak point of our system, however we exploit this gap using a transition of idea. A convolution neural network (CNN) is designed to upsample our low resolution depth map using the data of the higher resolution depth as label data. Then, the upsampled depth data using CNN and stereo camera depth data are fused using semi-global matching (SGM) algorithm. We proposed simplified fusion method created for the embedded system.