• Journal of Sensor Science and Technology
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• v.33 no.2
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• pp.93-97
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• 2024

With the development of promising future mobility and urban air mobility (UAM) technologies, the demand for LIDAR sensors has increased. The SWIR photodetector is a sensor that detects lasers for the 3D mapping of lidar sensor and is the most important technology of LIDAR sensor. An SWIR photodetector based on QDs in an eye-safe wavelength band of over 1400 nm has been reported. QDs-based SWIR photodetectors can be synthesized and processed through a solution process and have the advantages of low cost and simple processing. However, the organic ligands of QDs have insulating properties that limit their ability to improve the sensitivity and stability of photodetectors. Therefore, the technology to replace organic ligands with inorganic ligands must be developed. In this study, the organic ligand of the synthesized PbS QDs was replaced with a MAPI inorganic ligand, and an SWIR photodetector was fabricated. The analysis of the characteristics of the manufactured photodetector confirmed that the photodetector based on MAPI-capped PbS QDs exhibited up to 26.5% higher responsivity than that based on organic ligand PbS QDs.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.17 no.6
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• pp.111-116
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• 2018

Recently, shape manufacturing method has been changed to a 3D printer. Since lamination type manufacturing method is the basis for forming a three-dimensional shape by repeated lamination, the horizontal accuracy of the lamination layer is very important. In the current paper, we have proposed a new leveling system to be installed in a large 3D printer. The light source was reflected from the water surface contained in the measuring device, and the inclination of the measuring device was measured from the light that entered into four regions of a quarter photodetector. The electrical signals generated differently according to the position of the beam spot incident on the quarter photodetector was acquired and compensated to be horizontal by using a motor mounted at the corner. Compared to a digital leveler, the newly developed leveling system gave errors of only 2 to 3%. This new device can be applied to various fields including the 3D printer in future.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.10
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• pp.1370-1374
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• 2018

A heterojunction $SnS_2/p-Si$ photodetector was fabricated by RF magnetron sputtering system. $SnS_2$ was formed with 2-inch $SnS_2$ target. Al was applied as the front and the back metal contacts. Rapid thermal process was conducted at $500^{\circ}C$ to enhance the contact quality. 2D material such as $SnS_2$, MoS2 is very attractive in various fields such as field effect transistors (FET), photovoltaic fields such as photovoltaic devices, optical sensors and gas sensors. 2D material can play a significant role in the development of high performance sensors, especially due to the advantages of large surface area, nanoscale thickness and easy surface treatment. Especially, $SnS_2$ has a indirect bandgap in the single and bulk states and its value is 2 eV-2.6 eV which is considerably larger than that of the other 2D material. The large bandgap of $SnS_2$ offers the advantage for the large on-off current ratio and low leakage current. The $SnS_2/p-Si$ photodetector clearly shows the current rectification when the thickness of $SnS_2$ is 80 nm compared to when it is 135 nm. The highest photocurrent is $19.73{\mu}A$ at the wavelength of 740 nm with $SnS_2$ thickness of 80 nm. The combination of 2D materials with Si may enhance the Si photoelectric device performance with controlling the thickness of 2D layer.

• Current Photovoltaic Research
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• v.5 no.4
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• pp.145-149
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• 2017

Transition metal dichalcogenides (TMDs) have attracted much attention because of their excellent optical and electrical properties, which are the applications of next generation photoelectric devices. In this study, $MoS_2$, which is a representative material of TMDs, was formed by magnetic sputtering method and surface changes and optical characteristics were changed with thickness variation. In addition, by implementing the photodetector of $MoS_2/p-Si$ structure, it was confirmed that the change of the electrical properties rather than the change of the optical properties according to the thickness change of $MoS_2$ affects the photoresponse ratio of the photodetector. This result can be used to fabricate effective photoelectric devices using $MoS_2$.

• ETRI Journal
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• v.26 no.1
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• pp.57-60
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• 2004

We propose an inductive compensation method for a surface-mountable 10 Gbps photoreceiver module. Since many typical 10 Gbps photoreceiver modules consist of a photodetector and low-noise pre-amplifier, the impedance mismatch between the photodetector and pre-amplifier, as well as package parasitics, may reduce the frequency bandwidth. In this paper, we inserted an inductive component between the photodetector and pre-amplifier in order to create frequency bandwidth expansion. From the measurement results, we have found that the proposed technique can increase the -3 dB bandwidth about 4.2 GHz wider compared with an uncompensated module. And, from a bit-error rate (BER) test, we observed -15.7 dB sensitivity at $10^{-12}$ BER. This inductive compensation can be implemented easily and is compatible with common manufacturing processes of photoreceiver modules.

• Ceramist
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• v.22 no.1
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• pp.36-55
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• 2019

Atomically thin two-dimensional (2D) nanomaterials, including transition metal dichalcogenides (TMDs), graphene, boron nitride, and black phosphorus, have opened up new opportunities for the next generation optoelectronics owing to their unique properties such as high absorbance coefficient, high carrier mobility, tunable band gap, strong light-matter interaction, and flexibility. In this review, photodetectors based on 2D nanomaterials are classified with respect to critical element technology (e.g., active channel, contact, interface, and passivation). We discuss key ideas for improving the performance of the 2D photodetectors. In addition, figure-of-merits (responsivity, detectivity, response speed, and wavelength spectrum range) are compared to evaluate the performance of diverse 2D photodetectors. In order to achieve highly reliable 2D photodetectors, in-depth studies on material synthesis, device structure, and integration process are still essential. We hope that this review article is able to render the inspiration for the breakthrough of the 2D photodetector research field.

• Journal of Sensor Science and Technology
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• v.31 no.4
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• pp.228-237
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• 2022

Two-dimensional (2D) nanomaterials have demonstrated the potential to replace silicon and compound semiconductors that are conventionally used in photodetectors. These materials are ultrathin and have superior electrical and optoelectronic properties as well as mechanical flexibility. Consequently, they are particularly advantageous for fabricating high-performance photodetectors that can be used for wearable device applications and Internet of Things technology. Although prototype photodetectors based on single microflakes of 2D materials have demonstrated excellent photoresponsivity across the entire optical spectrum, their practical applications are limited due to the difficulties in scaling up the synthesis process while maintaining the optoelectronic performance. In this review, we discuss facile methods to mass-produce 2D material-based photodetectors based on the exfoliation of van der Waals crystals into nanosheet dispersions. We first introduce the liquid-phase exfoliation process, which has been widely investigated for the scalable fabrication of photodetectors. Solution processing techniques to assemble 2D nanosheets into thin films and the optoelectronic performance of the fabricated devices are also presented. We conclude by discussing the limitations associated with liquid-phase exfoliation and the recent advances made due to the development of the electrochemical exfoliation process with molecular intercalants.

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.93.2-93
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• 1998

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.3 s.333
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• pp.25-34
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• 2005

In this paper, we analyzed and measured the electrical crosstalk characteristics of a triplex transceiver module for ethernet Passive optical networks(EPONS). And we improved the electrical crosstalk levels using Dummy ground lines with signal lines. The triplex transceiver module consists of a laser diode as a transmitter, a digital photodetector as a digital data receiver, and a analog photodetector as a community antenna television signal receiver. And there are integrated on silicon substrate. The digital receiver and analog receiver sensitivity have to meet -24 dBm at $BER=10^{-l2}$ and -7.7 dBm at 44 dB SNR. And the electrical crosstalk levels have to maintain less than -86 dB from DC to 3 GHz. From analysis and measurement results, the proposed silicon substrate structure that contains the Dummy ground line with $100\;{\mu}m$ space from signal lines and separates 4 mm among devices respectively, is satisfied the electrical crosstalk level compared to simple structure. This proposed structure can be easily implemented with design convenience and greatly reduced the silicon substrate size about $50\%$.

• Current Optics and Photonics
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• v.1 no.5
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• pp.514-524
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• 2017

We proposed an integrated wavelength-selective photodetector based on a grating-assisted contradirectional coupler and a graphene absorption layer for a coarse wavelength division multiplexing (CWDM) communication system. The center wavelength of the absorption spectrum of the proposed device can be tuned simply by changing the period of the grating, and the proposed device structure is suitable to forming a cascaded structure. Therefore, an array of the proposed device of different grating periods can be used for simultaneous wavelength demultiplexing and signal detection in a CWDM communication system. Our theoretical study showed that the designed device with a grating length of $500{\mu}m$ could have an absorption of 95.1%, an insertion loss of 0.2 dB, and a 3 dB bandwidth of 7.5 nm, resulting in a -14 dB crosstalk to adjacent CWDM channels. We believe that the proposed device array can provide a compact and economic solution to receiver implementation in the CWDM system by combining functions of wavelength demultiplexing and signal detection.