• E2M - 전기 전자와 첨단 소재
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• 제10권1호
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• pp.54-60
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• 1997

The electrical and electromagnetic shielding properties have been investigated in polyaniline free standing films with different degrees of elongation cast from N-methyl 2-pyrrolidone(NMP) solution and camphorsulfonic acid(HCSA) doped polyaniline film. The degree of crystallinity of the crosslinked films increased with increasing the draw ratio. For the case of the oriented films doped with hydrochloric acid, we have the values of conductivities up to 173 S/cm. It is considered that the physical micro-crystalline crosslinking domains act as nucleation sites for the increase of relative crystallinity during stretching. We have obtained the value of conductivity 210 S/cm in the HCSA doped polyaniline film cast from the solvent of m-cresol, which is higher than that of the crosslinking oriented films. The electromagnetic shielding efficiency of HCSA doped polyaniline film obtained 37-41 dB in the frequency range of 10MHz-1GHlz, which is higher than that of the crosslinking oriented films. The higher value of electromagnetic shielding efficiency of HCSA doped polyaniline film suggests strong possibility of electromagnetic shielding material.

• 한국식품과학회지
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• 제9권2호
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• pp.138-143
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• 1977

메밀 전분의 이화학적 성질을 살펴본바, 입자의 크기는 4.3-11.4 미크론(평균 7.8미크론)이었다. 전분의 물결합능력은 103.7%, 아밀로스 함량은 25%이었다. 복굴절성 소실의 측정법에 의한 호화개시 및 호화 종료 온도는 각각 $61^{\circ}$ 및 $65^{\circ}C$이었고 아밀로그라프에 의한 초기 호화온도는$64.5^{\circ}C$이었다. 전분의 노화속도는 $21^{\circ}C$에서 밀 전분보다 다소 빨랐다.

• International Journal of Oral Biology
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• 제46권3호
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• pp.99-104
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• 2021

Associations between periodontal infection and cardiovascular disease have been documented. Porphyromonas gingivalis is a well-established periodontal pathogen, and tissue factor (TF) is a key initiator of the coagulation cascade. In this context, P. gingivalis has been reported to enhance TF expression in human endothelial cells. The present study investigated the underlying mechanisms of TF induction by P. gingivalis in human umbilical vein endothelial cells. P. gingivalis increased TF expression in a dose- and time-dependent manner. Not only live bacteria but also glutaraldehyde-fixed bacteria increased TF expression to the same extent. However, sonicates of P. gingivalis did not induce TF expression. Cytochalasin D and SMIFH2, which are inhibitors of actin polymerization and actin nucleation, respectively, inhibited the TF expression induced by P. gingivalis. Finally, TF production was decreased or increased in the presence of various signaling inhibitors, including mitogen-activated protein kinases. These results suggest that P. gingivalis induces endothelial TF expression by a bacterial internalization-dependent mechanism and through diverse signal transduction mechanisms.

• 한국주조공학회지
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• 제30권4호
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• pp.147-150
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• 2010

알루미늄 합금의 미세조직 개량을 위한 목적으로 사용되는 Al-Ti-B 합금계의 미세화제는 재활용 과정에서 붕소(B)의 농축(Agglomeration) 문제 및 Zr, Si, Cr 등을 함유하는 합금에서 미세화 효과가 급격히 감소하는 Poisoning effect 등이 지적되어 왔다. 최근에는 이를 대체할 수 있는 Al-Ti-C 합금계의 미세화제에 대한 연구가 활발한데 이는 TiC가 용탕 내에서 ${\alpha}$-Al의 핵생성처로 직접 작용하는 점에 착안한 것이다. 한편, 이들 Al-Ti-B, Al-Ti-C 계의 미세화제는 그 제조공정에서 $K_2TiF_6$를 이용함에 따라 불소함유 유해가스를 배출하여 환경 문제를 야기하고, 이를 포집/정화하기 위한 추가설비를 요구하게 된다. 따라서 대기 환경 오염 및 경제성 측면에서 유리한 미세화제의 친환경 제조기술에 대한 개발이 필요한 시점이다. 본 연구에서는 $K_2TiF_6$를 사용하지 않고 용탕 내의 자발적 반응을 이용하여 환경 및 경제적 측면에서 유리한 Al-Ti-C 미세화제를 개발하고자 하였다. A3003 합금을 대상소재로 하여 개발된 Al-Ti-C 미세화제와 상용 Al-Ti-B 미세화제의 미세화 도달시간 및 fading 발생 등을 비교하였다. 본 연구를 통하여 개발된 Al-8.6Ti-0.025C 미세화제는 상용 Al-Ti-B 미세화제 보다 적은 첨가량에도 유사한 미세화 성능을 나타내었으며 용탕 유지시간 100분까지도 fading이 발생하지 않는 것을 확인하였다.

• 한국재료학회지
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• 제24권2호
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• pp.116-122
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• 2014

$Bi_2Sr_2CaCu_2O_x$(Bi-2212) and $Bi_2Sr_2Ca_2Cu_3O_y$(Bi-2223) high-Tc superconductors(HTS) have been manufactured by plasma spraying, partial melt process(PMP) and annealing treatment(AT). A Bi-2212/2223 HTS coating layer was synthesized through the peritectic reaction between a 0212 oxide coating layer and 2001 oxide coating layer by the PMP-AT process. The 2212 HTS layer consists of whiskers grown in the diffusion direction. The Bi-2223 phase and secondary phase in the Bi-2212 layer were observed. The secondary phase was distributed uniformly over the whole layer. As annealing time goes on, the Bi-2212 phase decreases with mis-orientation and irregular shape, but the Bi-2223 phase increases because a new Bi-2223 phase is formed inside the pre-existing Bi-2212 crystals, and because of the nucleation of a Bi-2223 phase at the edge of Bi-2212 crystals by diffusion of Ca and Cu-O bilayers. In this study the spray coated layer showed superconducting transitions with an onset Tc of about both 115 K, and 50 K. There were two steps. Step 1 at 115 K is due to the diamagnetism of the Bi-2223 phase and step 2 at 50 K is due to the diamagnetism of the Bi-2212 phase.

• 한국결정성장학회지
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• 제9권4호
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• pp.387-395
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• 1999

The strain, surface and interfacial energies of III-V ternary systems were calculated for three kinds of structure modes: the Frank-van der Merwe(FM) mode, the Stanski-Krastanov(SK) mode and the Volmer-Weber(VW) mode. The free energy for each mode was estimated as functions of thickness and composition or lattice misfit. Through comparison of the free energy of each mode, it was found that the thickness-composition phase diagrams of III-V ternary systems can be determined only by considering the balance of the free energy and three kinds of structure modes appear in the phase diagrams. The SK mode appears only when the lattice misfit is large and/or the lattice layer is thick. The most stable structure of the SK mode is a cluster with four lattice layers or minimum thickness on a wetting layer of increasing lattice layers. The VW mode appears when the lattice misfit is large and the lattice layer is thin and only in the INPSb/InP and GaPSb/GaP system which have the largest lattice misfit of III-V ternary systems. The stable region of the SK mode in the GaPSb/GaP and InPSb/InP phase diagrams is largest of all because the composition dependence of the strain energy of these systems is stronger than that of the other systems. The critical number of lattice layers below which two-dimensional(2D) layers precede the three-dimensional(3D) nucleation in the SK mode at x=1.0 depends on the lattice misfit.

• Elastomers and Composites
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• 제39권2호
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• pp.142-152
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• 2004

서로 다른 두 종류의 폴리스타일렌(PS)을 injection 기계를 이용하여 인장 시편을 만들고, 온도와 인장 속도에 따른 crazing 거동 특성을 연구하기 위하여 다양한 시험을 하였다. 기계적물성은 craze 형성뿐만 아니라 다양한 시험 변수에 의해 영향을 받으며, brittle-ductile transition 이하의 온도에서의 인장 응력 및 최대 신율은 분자량, 인장 속도의 증가 및 온도의 감소에 따라 증가하며 craze의 수와 평균 길이 또한 증가한다. Crazing 응력도 동일한 형태로 증가함을 보여준다. 그러나, 이러한 특성은 인장 강도에 미치는 영향과 비교했을 때 보다 의존도는 상대적으로 낮다. Craze 형성과 성장에 필요한 시간으로 설명할 수 있는 crazing 응력과 인장 응력간의 차이는 분자량, 인장 속도에 따라 비례적으로 그리고, 온도가 감소함에 따라 증가함을 보여 준다. Crazing 은 ${\beta}$-relaxation 온도 근처에서 활성화된다. 이 온도에서는 crazing 응력이 급격하게 감소함을 나타낸다. 인장 평가시 craze 밀도가 적용된 응력에 따라 기하 급수적으로 증가되는데, 개시 단계에서는 craze는 서서히 형성되며, 일단 일정한 수만큼의 craze가 형성이 되면 craze 밀도가 급속도로 증가했다.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2002년도 학술대회 논문집
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• pp.339-339
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• 2002

In the RABiTS approach to coated conductor development, successful (both economic and technological) depends on the refinement and optimization of each of three important components: the metal tape substrate, the buffer layer(s), and the HTS layer. Here we will report on the ORNL approach and progress in each of these areas. - Most applications will require metal tapes with low magnetic hysteresis, mechanical strength, and excellent crystalline texture. Some of these requirements are competing. We report on progress in obtaining a good combination of these characteristics on metal alloys of Ni-Cr and Ni-W. - The deposition of appropriate buffer layers is a crucial step. Recently, base research has shown that the presence of a stable sulfur superstructure present on the metal surface is needed for the nucleation and epitaxial growth of vapor-deposited seed buffer layers such as YSZ, CeO$_2$ and SrTiO$_3$. We report on the details and control of this superstructure for nickel tapes, as well as recent results for Cu and Ni-13%Cr. - Processes for deposition of the HTS coating must economically provide large values of the figure-of-merit for conductors, current x length. At ORNL, we have devoted efforts to a precursor/post-annealing approach to YBCO coatings, for which the deposition and reaction steps are separate. We describe motivation for and progress toward developing this approach. - Finally, we address some issues for the implementation of coated conductors in real applications, including the need for texture control and electrical stabilization of the HTS coating.

• 한국전기전자재료학회논문지
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• 제36권5호
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• pp.500-504
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• 2023

In this study, the heteroepitaxial thin film growth of β-Ga₂O₃ was studied according to the position of the susceptor in mist-CVD. The position of the susceptor and substrate was moved step by step from the center of the hot zone to the inlet of mist in the range of 0~50 mm. It was confirmed that the average thickness increased to 292 nm (D1), 521 nm (D2), and 580 nm (D3) as the position of the susceptor moved away from the center of the hot zone region. The thickness of the lower region of the substrate is increased compared to the upper region. The surface roughness of the lower region of the substrate also increased because the nucleation density increased due to the increase in the lifetime of the mist droplets and the increased mist density. Therefore, thin film growth of β-Ga₂O₃ in mist-CVD is performed by appropriately adjusting the position of the susceptor (or substrate) in consideration of the mist velocity, evaporation amount, and temperature difference with the substrate, thereby determining the crystallinity of the thin film, the thickness distribution, and the thickness of the thin film. Therefore, these results can provide insights for optimizing the mist-CVD process and producing high-quality β-Ga₂O₃ thin films for various optical and electronic applications.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.27.1-27.1
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• 2011

The recent extensive research of one-dimensional (1D) nanostructures such as nanowires (NWs) and nanotubes (NTs) has been the driving force to fabricate new kinds of nanoscale devices in electronics, optics and bioengineering. We attempt to produce silicon oxide nanowires (SiOxNWs) in a simple way without complicate deposition process, gaseous Si containing precursors, or starting material of $SiO_2$. Nickel (Ni) nanoparticles (NPs) were applied on Si wafer and thermally treated in a furnace. The temperature in the furnace was kept in the ranges between 900 and $1,100^{\circ}C$ and a mixture of nitrogen ($N_2$) and hydrogen ($H_2$) flowed through the furnace. The SiOxNWs had widths ranging from 100 to 200 nm with length extending up to ~10 ${\mu}m$ and their structure was amorphous. Ni NPs were acted as catalysts. Since there were no other Si materials introduced into the furnace, the Si wafer was the only Si sources for the growth of SiOxNWs. When the Si wafer with deposition of Ni NPs was heated, the liquid Ni-Si alloy droplets were formed. The droplets as the nucleation sites induce an initiation of the growth of SiOxNWs and absorb oxygen easily. As the droplets became supersaturated, the SiOxNWs were grown, by the reaction between Si and O and continuously dissolving Si and O onto NPs. Photoluminescence (PL) showed that blue emission spectrum was centered at the wavelength of 450 nm (2.76 eV). The details of growth mechanism of SiOxNWs and the effect of Ni NPs on the formation of SiOxNWs will be presented.