• Proceedings of the Korean Society of Medical Physics Conference
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• 2002.09a
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• pp.373-375
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• 2002

4D CT is a dynamic volume imaging system of moving organs with an image quality comparable to conventional CT, and is realized with continuous and high-speed cone-beam CT. In order to realize 4D CT, we have developed a novel 2D detector on the basis of the present CT technology, and mounted it on the gantry frame of the state-of-the-art CT-scanner. In the present report we describe the design of the first model of 4D CT-scanner as well as the early results of performance test. The x-ray detector for the 4D CT-scanner is a discrete pixel detector in which pixel data are measured by an independent detector element. The numbers of elements are 912 (channels) ${\times}$ 256 (segments) and the element size is approximately 1mm ${\times}$ 1mm. Data sampling rate is 900views(frames)/sec, and dynamic range of A/D converter is 16bits. The rotation speed of the gantry is l.0sec/rotation. Data transfer system between rotating and stationary parts in the gantry consists of laser diode and photodiode pairs, and achieves net transfer speed of 5Gbps. Volume data of 512${\times}$512${\times}$256 voxels are reconstructed with FDK algorithm by parallel use of 128 microprocessors. Normal volunteers and several phantoms were scanned with the scanner to demonstrate high image quality.

• Journal of the Korean Vacuum Society
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• v.18 no.2
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• pp.108-115
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• 2009

The superlattice infrared photodetector (SLIP) with an active layer of 8/8-ML InAs/GaSb type-II strained-layer superlattice (SLS) of 150 periods was grown by MBE technique, and the proto-type discrete device was defined with an aperture of $200-{\mu}m$ diameter. The contrast profile of the transmission electron microscope (TEM) image and the satellite peak in the x-ray diffraction (XRD) rocking curve show that the SLS active layer keeps abrupt interfaces with a uniform thickness and a periodic strain. The wavelength and the bias-voltage dependences of responsivity (R) and detectivity ($D^*$) measured by a blackbody radiation source give that the cutoff wavelength is ${\sim}5{\mu}m$, and the maximum Rand $D^*$ ($\lambda=3.25{\mu}m$) are ${\sim}10^3mA/W$ (-0.6 V/13 K) and ${\sim}10^9cm.Hz^{1/2}/W$ (0 V/13 K), respectively. The activation energy of 275 meV analyzed from the temperature dependent responsivity is in good agreement with the energy difference between two SLS subblevels of conduction and valence bands (HH1-C) involving in the photoresponse process.

• Journal of Advanced Navigation Technology
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• v.7 no.2
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• pp.141-148
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• 2003

This paper presents and compares several techniques that detect the symbol rate of unknown received signal. Symbol rate is detected from the power spectral density of the circuits such as the delay and multiplier circuit, the square law circuit, and analytic signal, etc. As a result of discrete Fourier transform of the output signals of these circuits, a lot of spectral lines and some peaks appear in frequency domain and the position of first peak is corresponding to the symbol rate. If a spectral line on the frequency that is not located in symbol rate is larger than the first peak, the symbol rate is erroneously detected. Thus, the ratio between the value of first peak and the highest side spectral line is used for the measure of the performance of symbol rate detector. For the MPSK modulation, the analytic signal method shows better performance than the delay and multiplier and square law circuits when the received signal power is lager than -20dB. It is also noted that the delay and multiplier circuit is not able to detect the symbol rate for the QAM modulation.

• Journal of Sensor Science and Technology
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• v.13 no.2
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• pp.128-132
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• 2004

Short wave infrared (SWIR) photovoltaic devices have been fabricated from metal organic vapour phase epitaxy (MOVPE) grown n- on p- HgCdTe films on GaAs substrates. The MOVPE grown films were processed into mesa type discrete devices with wet chemical etching employed for meas delineation and ZnS surface passivatlon. ZnS was thermally evaporated from effusion cell in an ultra high vacuum (UHV) chamber. The main features of the ZnS deposited from effusion cell in UHV chamber are low fixed surface charge density, and small hysteresis. It was found that a negative flat band voltage with -0.6 V has been obtained for Metal Insulator Semiconductor (MIS) capacitor which was evaporated at $910^{\circ}C$ for 90 min. Current-Voltage (I-V) and temperature dependence of the I-V characteristics were measured in the temperature range 80 - 300 K. The Zero bias dynamic resistance-area product ($R_{0}A$) was about $7500{\Omega}-cm^{2}$ at room temperature. The physical mechanisms that dominate dark current properties in the HgCdTe photodiodes are examined by the dependence of the $R_{0}A$ product upon reciprocal temperature. From theoretical considerations and known current expressions for thermal and tunnelling process, the device is shown to be diffusion limited up to 180 K and g-r limited at temperature below this.