• 전자공학회논문지SC
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• 제39권4호
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• pp.16-24
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• 2002

본 논문에서는 높은 해상도와 고속 신호 샘플링을 위해 병합 캐패시터 스위칭(merged-capacitor switching：MCS) 기법을 적용한 10b 120 MSample/s CMOS 파이프라인 A/D 변환기(analog-to- digital converter：ADC) 회로를 제안한다. 제안하는 ADC의 전체 구조는 응용되는 시스템의 속도, 해상도 및 면적 등의 사양을 고려하여 다단 파이프라인 구조를 사용하였고, MDAC(multiplying digital-to- analog converter)의 캐패시터 수를 50 %로 줄임으로써 해상도와 동작 속도를 동시에 크게 향상시킬 수 있는 MCS 기법을 적용하였다. 제안하는 ADC는 0.25 um double-poly five-metal n-well CMOS 공정을 이용하여 설계 및 제작되었고, 시제품 ADC의 DNL(differential nonlinearity)과 INL(integral nonlinearity)은 각각 ${\pm}$0.40 LSB, ${\pm}$0.48 LSB 수준을 보여준다. 100 MHz와 120 MHz 샘플링 주파수에서 각각 58 dB와 53 dB의 SNDR(signal-to-noise-and-distortion ratio)을 얻을 수 있었고, 100 MHz 샘플링 주파수에서 입력 주파수가 나이퀴스트(Nyquist) 입력인 50 MHz까지 증가하는 동안 54 dB 이상의 SNDR과 68 dB 이상의 SFDR(spurious-free dynamic range)을 유지하였다. 입출력단의 패드를 제외한 칩 면적은 3.6 $mm^2$(＝ 1.8 mm ${\times}$ 2.0 mm)이며, 최대 동작 주파수인 120 MHz 클럭에서 측정된 전력 소모는 208 mW이다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권1호
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• pp.66-79
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• 2008

Several oxides have recently been reported to have resistance-switching characteristics for nonvolatile memory (NVM) applications. Both binary and ternary oxides demonstrated great potential as resistive-switching memory elements. However, the switching mechanisms have not yet been clearly understood, and the uniformity and reproducibility of devices have not been sufficient for gigabit-NVM applications. The primary requirements for oxides in memory applications are scalability, fast switching speed, good memory retention, a reasonable resistive window, and constant working voltage. In this paper, we discuss several materials that are resistive-switching elements and also focus on their switching mechanisms. We evaluated non-stoichiometric polycrystalline oxides ($Nb_2O_5$, and $ZrO_x$) and subsequently the resistive switching of $Cu_xO$ and heavily Cu-doped $MoO_x$ film for their compatibility with modem transistor-process cycles. Single-crystalline Nb-doped $SrTiO_3$ (NbSTO) was also investigated, and we found a Pt/single-crystal NbSTO Schottky junction had excellent memory characteristics. Epitaxial NbSTO film was grown on an Si substrate using conducting TiN as a buffer layer to introduce single-crystal NbSTO into the CMOS process and preserve its excellent electrical characteristics.

• Journal of the Optical Society of Korea
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• 제4권1호
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• pp.14-18
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• 2000

We have investigated gain flattening of EDFA systems with or without a gain equalizer for WDM long-haul transmission using a re-circulating EDFA loop. Without a gain equalizer, gain variation as small as 2.9 dB was achieved over the 10-nm band of a 100 cascaded EDFA system by the inversion principle. With a gain equalizer based on all-fiber acousto-optic tunable filters, two different config-urations of EDFAs were tested. For a single-stage EDFA scheme, the 21-nm band has shown 3.8 dB of gain variation at 17.4 ∼ 20.3 dB of OSNRs after the 100the stage of EDFAs. For a dual-stage EDFA scheme, a wider bandwidth of 34 nm has shown 3.6-dB variation after 40 cascaded EDFAs.

• 한국재료학회지
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• 제22권8호
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• pp.385-389
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• 2012

Significant improvements in the switching voltage distribution are required for the development of unipolar resistive memory devices using $MnO_x$ thin films. The $V_{set}$ of the as-grown $MnO_x$ film ranged from 1 to 6.2 V, whereas the $V_{set}$ of the oxygen-annealed film ranged from 2.3 to 3 V. An excess of oxygen in an $MnO_x$ film leads to an increase in $Mn^{4+}$ content at the $MnO_x$ film surface with a subsequent change in the $Mn^{4+}/Mn^{3+}$ ratio at the surface. This was attributed to the change in $Mn^{4+}/Mn^{3+}$ ratios at the $MnO_x$ surface and to grain growth. Oxygen annealing is a possible solution for improving the switching voltage distribution of $MnO_x$ thin films. In addition, crystalline $MnO_x$ can help stabilize the $V_{set}$ and $V_{reset}$ distribution in memory switching in a Ti/$MnO_x$/Pt structure. The improved uniformity was attributed not only to the change of the crystallinity but also to the redox reaction at the interface between Ti and $MnO_x$.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 학술대회지
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• pp.883-884
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• 2004

High-speed IC for time-division multiplexing (TDM) optical transmission systems have been designed and fabricated by using InP heterojunction-bipolar-transistor (HBT) technology. The driver IC was developed for driving external modulators, featuring differential outputs and the operation speed up to 10 Gbps with an output voltage swing of 1.3 Vpp at each output which was the limit of the measurement. Because -3 dB frequency was 20GHz, this circuit will be operated up to 20Gbps. 1.3Vpp differential output was achieved by switching 50 mA into a 50 $\Omega$ load. The power dissipation of the driver IC was 1W using a single supply voltage of -3.5Y. Input md output return loss of the IC were better than 10 dB and 15 dB, respectively, from DC to 20GHz. The chip size of fabricated IC was $1.7{\Box}1.2 mm^{2}$.

• 한국전자파학회논문지
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• 제23권5호
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• pp.624-631
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• 2012

본 논문은 Guanella의 1:1 transmission-line transformer와 harmonic filtering 방식을 이용한 13.56 MHz 고효율 전류 모드 D급(CMCD) 전력증폭기를 제안한다. 출력 정합 네트워크에 기존의 D급 전력증폭기의 부하 네트워크를 변형하여 harmonic filtering 방식을 포함시킴으로써 낮은 2차와 3차 고조파 특성을 얻었다. 제작된 CMCD 전력증폭기는 13.56 MHz의 CW 입력 신호를 사용하여 측정하였을 때, 13.4 dB의 전력 이득을 가지며, 44.4 dBm의 출력에서 84.6 %의 높은 PAE 특성을 나타내었다. 같은 출력에서 2차 3차 고조파는 각각 -50.3 dBc와 -46.4 dBc를 나타냈다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.710-713
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• 2004

The design, simulation, modeling and measurement of a low temperature co-fired ceramic (LTCC) RF switch module for GSM applications is presented in this paper. RF switch module is constructed using a Rx/Tx switching circuit and integrated low pass filter. The low pass filter function was designed to operate in th GSM band. Insertion and return loss of the low pass filter were designed less than 0.3 dB and better than 12.7 dB at 900 MHz. The RF switch module contained 10 embedded passives and 3 surface mount components integrated on $4.6{\times}4.8{\times}1.2$ nm, 6-layer multi-layer integrated circuit. The insertion loss of switch module was measured at 900 MHz was 11 dB.

• 전자공학회논문지
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• 제53권1호
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• pp.29-35
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• 2016

집적광학 $Ti:LiNbO_3\;1{\times}2$ Y-fed Balanced-Bridge 마하젠더 간섭기(YBB-MZI) 구조에 다이폴 패치 아테나를 적용해서 $1.3{\mu}m$ 파장대역에서 동작하는 전계센서를 구현하였다. BPM 전산모사를 통해서 소자 설계 및 동작성능을 검증하였고, $1.3{\mu}m$ 파장대역에서 ~16.6 V 스위칭전압과 이에 대응해서 소멸비는 ~14.7 dB로 측정되었다. 10 MHz, 50 MHz 각각의 주파수에서 감지 가능한 최소 전계는 1.12 V/m, 3.3 V/m로 측정 되었으며, 이에 대응되는 각 주파수에서 ~22 dB, ~18 dB의 다이나믹 범위가 측정되었다. 제작된 센서는 0.29~29.8 V/m 범위의 전계세기에 대해서 선형응답 특성을 나타내었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1531-1534
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• 2009

Effect of process factors on the sensitivity of inner-type digital switching TSP was analyzed. From these results, we have successfully fabricated inner-type digital switching TSP embedded in 3.2-inch WQVGA PLS mode LCD panel. During many factors, TFT sensor structure for reducing the PI thickness and a separation distance of $0.3{\mu}m$ between the conductive column spacer (C/S) and TFT sensor were essential. Glass thickness and main C/S density were also important factors. This technology can be applied to wide angle of view hand-held phones, personal digital assistants (PDAs), and tablet PCs.

• 대한기계학회논문집
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• 제16권6호
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• pp.1156-1162
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• 1992

본 연구에서는 종횡비가 다른 3가지의 날카로운 모서리를 가진 타원 슬롯노즐 (AR=1,2,4)을 풍동 수축부 끝에 장착하여 타원제트의 유동특성 및 축교차현상을 3-D LDV 시스템을 이용하여 조사하였다.