• 제목/요약/키워드: 2212 phase

검색결과 121건 처리시간 0.024초

Phase Intergrowth in the Syntheses of Bi-superconducting Thin Films

  • Chun, Min-Woo;An, In-Soon;Park, Yong-Pil
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집
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    • pp.490-493
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    • 2002
  • Phase intergrowth some kinds of the Bi$_2$Sr$_2$Ca$\_$n-1/Cu$\_$n/O$\_$y/ phases is observed in the thin film fabrication at ultralow co-deposition with multi targets by means of ion beam sputtering. The molar fraction of the Bi2212 phase in the mixed crystal of the grown films is investigated as a function of the applied ozone pressure and the substrate temperature. The activation energy for the phase transformation from the Bi2201 to the Bi2212 is estimated in terms of the Avrami equation. This study reveals that the formation of a liquid phase contributes significantly to the construction of the Bi2212 phase in the thin films, differing from the bulk synthesis.

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기판온도와 산화가스압에 따른 Bi-2212 초전도 박막의 단상막 형성에 관한 연구 (A Study on Formation of Single-phase Film in the Bi-2212 Superconducting Thin Films Substrate Temperature and Oxide Gas Pressures)

  • 양승호;이희갑;박용필
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.484-485
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    • 2007
  • BiSrCaCuO superconducting thin films have been fabricated by co-deposition using the faraday cup. Despite setting the composition of thin film Bi2212, Bi(2201, 2212, 2223) phase were appeared. It was confirmed the obtained field of stabilizing phase was represented in the diagonal direction of the right below end in the Arrhenius plot of temperature of the substrate and $PO_3$, and it was distributed in the rezone.

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단상막 형성을 위해 기판온도와 산화 가스압에 따른 Bi-2223 초전도 박막의 생성 영역에 관한 연구 (A Study on Produced Region of Bi-2223 Superconducting Thin Films versus substrate temperature and oxide gas pressures for formation of single-phase Film)

  • 양승호;박용필
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2007년도 춘계종합학술대회
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    • pp.536-539
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    • 2007
  • BSCCO 박막은 다양한 기판온도와 산화 가스압에 변화에서 증발법에 의해 제작되었다. 박막조성을 Bi2212 또는 Bi2223으로 설정했음에도 불구하고, 어느 경우나 Bi2201, Bi2212 및 Bi2223상이 생성되었다. 이들 안정상의 생성 영역은 기판 온도-산화 가스압의 Arrhenius 플롯에서 우측 하단 방향으로 경사진 직선으로 표시되며 매우 좁은 영역에 분포되어 있다. 생성막의 XRD 피크는 기판 온도에 따라 연속적으로 변화했다. 이는 Bi2201, Bi2212, Bi2223의 각상이 결정 구조 내에 혼합되어 있는 혼합 결정계의 존재를 나타내고 있으며, 각 상의 단상막은 매우 좁은 온도, 가스압 범위에서만 생성되었다.

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동테이프 위의 Bi-계 초전도 후막에서 전구체분말 조성의 영향 (The Effect of the precursor powder composition for Bi-system superconducting thick films on Cu tapes)

  • 한상철;성태현;한영희;이준성;김상준
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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    • pp.65-68
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    • 1999
  • A well oriented Bi2212 superconductor thick films were fabricated by screen printing with a Cu-free Bi-Sr-Ca-O mixture powder on a copper plate and heat-treating at 820-88$0^{\circ}C$ for several minute in air. During the heat-treatment, the printing layer partially melted by reaction between the Cu-free precursor and CuO of the oxidizing copper plate. In the partial melting state, it is believed that the solid phase is Bi-free phase and Cu-rich phase and the composition of the liquid is around Bi : Sr : Ca : Cu = 2 : 2 : 0 : 1. Following the partial melting, the Bi2212 superconducting phase is formed at Bi-free phase/liquid interface by nucleation and grows. With decreasing the Bi composition in the precursor powder, the critical temperature(T$_{c}$) of the fabricated Bi2212 thick film increased to about 79 K.K.

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Bi-Sr-Ca-Cu-O 세라믹의 도우핑 특성 (Deping characteristics of the Bi-Sr-Ca-Cu-O ceramics)

  • 박용필;김영천;황석영
    • E2M - 전기 전자와 첨단 소재
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    • 제9권1호
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    • pp.1-8
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    • 1996
  • We investigated the effects of doping elements on the Bi-Sr-Ca-Cu-O ceramics. The doping elements can be classified into four groups depending on their supeconducting characteristics in the Bi-Sr-Ca-Cu-O structure. The first group of doping elements(Co, Fe, Ni and Zn) substitute into the copper site and can reduce the critical temperatures of the 2223 and 2212 phases. The second group of doping elements(Y and La) substitute into the Ca site and cause the disappearance of the 2223 phase and increase the critical temperatures in the 2212 phase. The third group of doping elements(P and K) have a tendency to decompose the superconducting phase and reduce the optimal sintering temperature. The fourth group of doping elements(B, Si, Sn and Ba) almost unaffected the superconductivity of the 2223 and 2212 phase.

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Cu-free 전구체를 이용한 동 테이프 위의 Bi2212 초전도 후막의 급속 제조 (Rapid Fabrication of Bi2212 Superconducting Films on Cu Tape with Cu-free Precursor)

  • 한상철;성태현;한영희;이준성;김상준
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 추계학술대회 논문집
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    • pp.69-72
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    • 1999
  • A Well oriented Bi$_2$re$_2$CaCu$_2$O$\sub$8/(Bi2212) superconductor thick films were formed successfully on a copper substrate by liquid reaction between a Cu-free precursor and Cu tape using method in which Cu-free BSCO powder mixture was printed on copper plate and heat-treated. And we examined the mechanism for the rapid formation of Bi2212 superconducting films from observing the surface microstructure with heat-treatment time. At heat-treatment temperature, the printing layer partially melt by reacting with CuO of the oxidizing copper plate, and the nonsuperconducting phases present in the melt are typically Bi-free phases and Cu-free phases. Following the partial melting, the Bi$_2$Sr$_2$CaCu$_2$O$\sub$8/ superconducting phase is formed at Bi-free phase/liquid interface by nucleation and grows. It was confirmed that the phase colony from the phase diagram of Bi$_2$O$_3$-(SrO+CaO)/2-CuO system is similar to the observed result.

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The Influence of Bi-Sticking Coefficient in Bi-2212 Thin Film

  • Lee, Hee-Kab;Park, Yong-Pil;Lee, Joon-Ung
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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    • pp.152-156
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    • 2000
  • Bi-thin films are fabricated by an ion beam sputtering, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below $730^{\circ}C$ and decreases linearly with temperature over $730^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_2O_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

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동피복재법을 이용한 Bi-Sr-Ca-Cu-O 고온초전도 후막 제조 (Fabrication of Cu-Sheathed Bi-Sr-Cu-O High Temperature Superconductor Thick Films)

  • 한상철;성태현;한영희;이준성;정상진
    • 한국초전도저온공학회:학술대회논문집
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    • 한국초전도저온공학회 1999년도 제1회 학술대회논문집(KIASC 1st conference 99)
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    • pp.22-25
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    • 1999
  • A well oriented Bi-2212 superconductor thick films were fabricated by screen printing with a Cu-free Bi-Sr-Ca-Cu-O powder on a copper plate and heat-treating at 820- $880^{\circ}C$for several minute in low oxygen pressure or are. At minute in low oxygen pressure of air. At , the printing layer partially melted by reaction between the Cu-free precursor by reaction between the Cu-free$870^{\circ}C$ precursor and CuO of the oxidizing copper plate. It is believed that the solid phase is Bi : Sr : Ca : Cu = 2 : 2 : 0 : 1. It is likely that the Bi-2212 superconducting phase is formed at Bi-2212 superconducting phase is formed at Bi-free phase/liquid interface by nucleation and grows.

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Bi계 세라믹에서 초전도체 특성에 미치는 도우핑 원소의 영향 (Effect of Doping Elements on Superconducting Characteristics in Bi-system Ceramics)

  • 양승호;박용필;김용주
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.198-203
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    • 2000
  • This paper investigated the effects of doping elements on the Bi-Sr-Ca-Cu-O ceramics. The doping elements can be classified into four groups depending on their superconducting characteristics in the Bi-Sr-Ca-Cu-O structure. The first group of doping elements(Co, Fe, Ni and Zn) substitute into the copper site and can reduce the critical temperatures of the 2223 and 2212 phases. The second group of doping elements(Y and La) substitute into the Ca site and cause the disappearance of the 2223 phase and increase the critical temperatures in the 2212 phase. The third group of doping elements(P and K) have a tendency to decompose the superconducting phase and reduce the optimal sintering temperature. The fourth group of doping elements(B, Si, Sn and Ba) almost unaffected the superconductivity of the 2223 and 2212 phase.

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Bi계 산화물 초전도체 2212상에 있어서 Bi 자리에 Ge 치환에 따른 초전도 특성 (Superconducting Properties of Ge Substitution for the Bi Site in the 2212 Phase of Bi-Sr-Ca-Cu-O Superconductors)

  • 신재수;이민수;최봉수;송승용;송기영
    • 한국세라믹학회지
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    • 제37권8호
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    • pp.787-791
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    • 2000
  • Samples with the nominal composition, Bi2-xGexSr2CaCu2O8+$\delta$ (x=0, 0.1, 0.2, 0.3, 0.4, 0.5) were prepared by the solid-state reaction method. We have studied the effect of substitution Ge for Bi and investigated the superconducting properties by changing oxygen content with Ge substitution. It was found that temperature difference, ΔK, between TCon and TCzero was considerably smaller in the samples prepared by the intermediate pressing method than that in the samples by the solid-state reaction method. We found the solubility limit of Ge to the 80 K single phase was around x=0.3. Within the solubility limit, lattice constant c decreased with the increase of x. In the region of the 80K single phase, the onset critical temperature TCon increased and excess oxygen content decreased with increase of x.

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