• Title/Summary/Keyword: 2.45GHz Microwave

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Microwave-Assisted Heating of Electrospun SiC Fiber Mats

  • Khishigbayar, Khos-Erdene;Joo, Young Jun;Cho, Kwang Youn
    • Journal of the Korean Ceramic Society
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    • v.54 no.6
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    • pp.499-505
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    • 2017
  • Flexible silicon carbide fibrous mats were fabricated by a combination of electrospinning and a polymer-derived ceramics route. Polycarbosilane was used as a solute with various solvent mixtures, such as toluene and dimethylformamide. The electrospun PCS fibrous mats were cured under a halogen vapor atmosphere and heat treated at $1300^{\circ}C$. The structure, fiber morphology, thermal behavior, and crystallization of the fabricated SiC fibrous mats were analyzed via scanning electron microscopy (SEM), X-ray diffraction (XRD), and thermal imaging. The prepared SiC fibrous mats were composed of randomly distributed fibers approximately $3{\mu}m$ in diameter. The heat radiation of the SiC fiber mats reached $1600^{\circ}C$ under microwave radiation at a frequency of 2.45 GHz.

A CMOS Complementary Bridge Rectifier for Driving RFID Transponder Chips

  • Park, Kwang-Min
    • Transactions on Electrical and Electronic Materials
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    • v.7 no.3
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    • pp.103-107
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    • 2006
  • In this paper, a CMOS complementary bridge rectifier for driving RFID transponder chips is presented. The proposed RFID CMOS complementary bridge rectifier is designed with two NMOSs at the input, which are configured by cross-connected gate structures, and two PMOSs and two NMOSs at the output, which are configured by diode-connected MOS structures. Output characteristics of the proposed rectifier are analyzed with the high frequency small-signal equivalent circuit and verified with SPICE for RFID operating frequencies of 13.56 MHz HF for ISO 18000-3, 915MHz UHF for ISO 18000-6, and 2.45 GHz microwave for ISO 18000-4. Simulation results show well-rectified and high enough DC output voltages for driving the low power microchip in the RFID transponder for the frequency range from HF to microwave. DC output voltages are dropped by only around 0.7 V from the input peak-to-peak voltages.

Growth Behavior of Aluminum Borate Whisker under 2.45 GHz Electromagnetic Irradiation (2.45 GHz 전자기파 조사하에서 Aluminum Borate Whisker의 성장 거동)

  • 김성완;이상근;김지경;이창희;안진모;신준식;박성수;박희찬
    • Journal of the Korean Ceramic Society
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    • v.40 no.10
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    • pp.998-1004
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    • 2003
  • With starting materials of two different powder mixtures, $Al_2$(S $O_4$)$_3$+xNa$_2$B$_4$ $O_{7}$$.$10$H_2O$(㏖ ratio; x=0.1, 0.7) and ${\gamma}$-Al$_2$ $O_3$+xNa$_2$B$_4$ $O_{7}$$.$10$H_2O$(㏖ ratio; x=0.1, 0.7), whisker-type $Al_{18}$B$_4$ $O_{33}$ particles were synthesized by using conventional and microwave heat-treatment. The effects of microwave, amount of flux and temperature on the growth of whisker-type $Al_{18}$B$_4$ $O_{33}$ particles were investigated by using X-Ray Diffractometry (XRD) and Scanning Electron Microscopy (SEM). With increase of heat-treatment temperature and amount of flux, the size of whisker-type $Al_{18}$B$_4$ $O_{33}$ particles increased in both conventional and microwave heat-treated samples. However, compared to the conventional heat-treated samples, whisker-type $Al_{18}$B$_4$ $O_{33}$ particles were well grown for the microwave heat-treated samples.ted samples.

Microstructural Development During Microwave Sintering of CaO-$ZrO_2$-$SiO_2$Glass (마이크로파 소결에 의한 CaO-$ZrO_2$-$SiO_2$계 결정화 유리의 미세구조)

  • 소지영;김형순
    • Journal of the Korean Ceramic Society
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    • v.37 no.12
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    • pp.1178-1186
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    • 2000
  • 타일의 내마모성과 내산성을 향상시키기 위해 결정화유리가 최근에 새로운 유약 재료로서 소개되고 있다. 신 유약의 연구에 사용된 조성은 $Ca_2$ZrSi$_4$O$_{12}$ 상에 근접하는 CaO-ZrO$_2$-SiO$_2$계의 유리조성의 분말로, 마이크로파 가열 (2.45 GHz)에 의해서 900-120$0^{\circ}C$의 0-20분간 소성되어 평가되었다. 그 결과, 100$0^{\circ}C$ 이상에서 소성한 시편은 내부 결정화를 나타내었으며, 결정상은 미세(5$mu extrm{m}$)한 크기를 갖는 $Ca_2$ZrSi$_4$O$_{12}$가 주 결정상이며, $Ca_2$ZrSi$_4$O$_{12}$, CaSiO$_3$, SiO$_2$의 세 상이 나타났다. 소결체의 미세구조는 사용한 유리분말의 입도의 영향을 받았다. 미세분말 (<38$\mu\textrm{m}$)을 이용한 소결체의 조직이 조세분말 (45-150$\mu\textrm{m}$)의 경우보다 수축율면에서 높았으며 낮은 기공도를 갖는 미세구조를 가졌다. 마이크로파에 의한 유리분말의 소성은 1000-120$0^{\circ}C$ 구간에서 10분 이내 결정화가 완료되는 급속 가열 공정이었으며 CaO-ZrO$_2$-SiO$_2$계 결정화 유리 제조에 균일한 체적가열을 할 수 있었다.

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Compact Dual-Band Half-Ring-Shaped Bent Slot Antenna for WLAN and WiMAX Applications

  • Yeo, Junho;Lee, Jong-Ig
    • Journal of information and communication convergence engineering
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    • v.15 no.4
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    • pp.199-204
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    • 2017
  • A compact dual-band half-ring-shaped (HRS) bent slot antenna fed by a coplanar waveguide for wireless local area network (WLAN) and worldwide interoperability for microwave access (WiMAX) applications is presented. The antenna consists of two HRS slots with different lengths and widths. The two HRS slots are connected through an arc-shaped slit, and the upper HRS slot is bent in order to reduce the size of the antenna. The optimized dual-band HRS bent slot antenna operating in the 2.45 GHz WLAN and 3.5 GHz WiMAX bands is fabricated on an FR4 substrate with dimensions of 30 mm by 30 mm. The slot length of the proposed dual-band slot antenna is reduced by 35%, compared to a conventional dual-band rectangular slot antenna. Experimental results show that the proposed antenna operates in the frequency bands of 2.40-2.49 GHz and 3.39-3.72 GHz for a voltage standing wave ratio of less than 2, and measured gain is larger than 1.4 dBi in the two bands.

Microwave Dielectric Properties of (1-x)ZnWO4-xTiO2 Ceramics ((1-x)ZnWO4-xTiO2 세라믹스의 마이크로파 유전특성)

  • 윤상옥;김대민;심상흥;강기성
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.5
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    • pp.397-403
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    • 2003
  • Microwave dielectric properties of (1-x)ZnW $O_4$-xTi $O_2$ ceramic systems were investigated with calcination temperatures and Ti $O_2$ contents. The ZnW $O_4$ ceramic could be suitably sintered at 1075$^{\circ}C$ and showed the dielectric constant of 13.6, quality factor(Q$\times$ $f_{O}$value) of 22,000 and temperature coefficient of resonant frequency($\tau$$_{f}$) of -65$\pm$2ppm/$^{\circ}C$. Increasing the amount of Ti $O_2$ in the range of 0.25 to 0.45 mol, the dielectric constant and $\tau$$_{f}$ increased due to the role of Ti $O_2$ but the quality factor decreased due to the increase of phase boundaries. The 0.7ZnW $O_4$-0.3Ti $O_2$ ceramic showed the dielectric constant of 19.8, qualify factor(Q$\times$ $f_{0}$) of 20,000 and $\tau$$_{f}$ of -3$\pm$1ppm/$^{\circ}C$.>.EX>.>.>.

Non-invasive Measurements of the Thickness of YBCO Thin Films by Using Microwave Resonators: Roles of the Uncertainty in the Calibration Film Thickness (마이크로파 공진기를 이용한 YBCO 박막 두께의 비파괴적 측정: 캘리브레이션 박막 두께의 불확도의 역할)

  • Kim, Myung-Su;Jung, Ho-Sang;Yang, Woo-Il;Lee, Sang-Young
    • Progress in Superconductivity
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    • v.14 no.1
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    • pp.45-51
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    • 2012
  • Microwave metrology for the thickness of metallic or superconductive films provides a new way to measure the film thickness in a non-invasive way by using microwave resonators, with the measurement accuracy affected by standard uncertainties in the resonator quality factor, temperature-dependent resonant frequency and the dimensions of the resonators. Here we study effects of the standard uncertainty in the thickness, $t_{cal}$, of a calibration $YBa_2Cu_3O_{7-{\delta}}$ (YBCO) film on the measured thicknesses, $t_{RF}$, by using a ~ 40 GHz microwave resonator. For the study, we used five YBCO films having the thicknesses of 70 - 360 nm, for which relative standard uncertainties in $t_{RF}$ due to that in $t_{cal}$ are obtained. The standard uncertainty in $t_{cal}$ was determined with the surface roughness of the film taken into account. It appeared that relative standard uncertainty in $t_{cal}$ significantly affects the $t_{RF}$ values, with the values of 1% (5%) in the former resulting in those of 1-2% (5-9%) for the latter at 10 K. Our results show that, for realizing relative standard uncertainties less than 5% in $t_{RF}$ for all the YBCO films, the surface roughness of the calibration films should be small enough to realize a relative standard uncertainty of less than 2.7% in $t_{cal}$.

Microwave Dielectric Properties of $MnO_2$ Added $(Pb_{0.45}Ca_{0.55})(Fe_{0.5}Nb_{0.5})O_3$ Ceramics ($MnO_2$가 첨가된 $(Pb_{0.45}Ca_{0.55})(Fe_{0.5}Nb_{0.5})O_3$ 세라믹스의 마이크로파 유전특성)

  • Lee, Sang-Min;Lee, Doo-Hee;Yoon, Hyen-Sang;Park, Chang-Yub
    • Proceedings of the KIEE Conference
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    • 1993.11a
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    • pp.237-239
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    • 1993
  • $MnO_2$ added $(Pb_{0.45}Ca_{0.55})(Fe_{0.5}Nb_{0.5})O_3$ was calcined at $850^{\circ}C$ for two hours and sintered at $1100^{\circ}C$ for two hours. The microstructure was examined using XRD and SEM. The dielectric constant, the quality factor, and the temperature stability was measured using Hakki and Coleman method. Dielectric constant was improved to 94 from 0.5wt% $MnO_2$ added sample with $Q{\cdot}f=4260GHz$ and acceptable ${\tau}_f$ (< $20ppm/^{\circ}C$).

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Hydrophobic and Mechanical Characteristics of Hydrogenated Amorphous Carbon Films Synthesized by Linear Ar/CH4 Microwave Plasma

  • Han, Moon-Ki;Kim, Taehwan;Cha, Ju-Hong;Kim, Dong-Hyun;Lee, Hae June;Lee, Ho-Jun
    • Applied Science and Convergence Technology
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    • v.26 no.2
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    • pp.34-41
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    • 2017
  • A 2.45 GHz microwave plasma with linear antenna has been prepared for hydrophobic and wear-resistible surface coating of carbon steel. Wear-resistible properties are required for the surface protection of cutting tools and achieved by depositing a hydrogenated amorphous carbon film on steel surface through linear microwave plasma source that has $TE_{10}-TEM$ waveguide. Compared to the existing RF plasma source driven by 13.56 MHz, linear microwave plasma source can easily generate high density plasma and provide faster deposition rate and wider process windows. In this study, $Ar/CH_4$ gas mixtures are used for hydrogenated amorphous carbon film deposition. When microwave power of 1000 W is applied, 40 cm long uniform $Ar/CH_4$ plasma could be obtained in gas pressure of 200~400 mTorr. The Vickers hardness measurement of hydrogenated amorphous carbon film on steel surface was evaluated. It was found the optimized deposition condition at $Ar:CH_4=25:25$ sccm, 300 mTorr with microwave power of 1000W and RF bias power of 100W. By deposition of hydrogenated amorphous carbon film, contact angle on steel surfaces increases from $43.9^{\circ}$ to $93.2^{\circ}$.

The Design of a Wideband Adjustable Linear Gain Microwave Equalizer (마이크로파대 광대역 가변 선형이득 등화기 설계)

  • Kim, Jeong-Yon;Kong, Dong-Ook;Park, Dong-Cheol;Lee, Dong-Ho;Jeon, Kye-Ik
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.45 no.10
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    • pp.59-64
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    • 2008
  • In this paper an adjustable linear gain equalizer which is operated from 6GHz to 18GHz in order to apply wideband RF circuit System is proposed and fabricated on $Al_2O_3$ substrate using thin film process. An adjustable linear gain equalizer is proposed to T type circuit and designed to aim on variable slope $-7dB{\sim}-13dB$ using the PIN Diode