• Journal of the Korean Ceramic Society
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• v.26 no.3
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• pp.331-340
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• 1989

In this study, it was tried to deposit diamond films from a mixture of CH4 and H2 by the microwave plasma chemical vapor deposition(MWCVD). The MWCVD process was designed and set up from the 2.45GHz microwave generator. And the diamond film was successfully deposited on silicon wafers from the mixture of methane and hydrogen. The microstructures of the deposited diamond films were studied by using the following deposition variables : (a) methane concentration(0.6-10%), (b) reaction pressure(10-100torr), and (c) the substrate temperature(450-76$0^{\circ}C$).

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.6
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• pp.43-48
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• 2006

In this paper, the rectenna converting 2.45[GHz] microwave into DC power is designed and fabricated for wireless power transmission using microwave and the methode for impedance matching and tuning are proposed in order to maximize RF-DC conversion efficiency. The fabricated rectenna can be easily tuned by using a broad open stub and has the RF-DC conversion efficiency up to 59[%] when the 5[dBm] input power is applied. The 2.2[V], 1.5[mW] DC level, in the 1[m] distance between the transmitter and the receiver can be obtained and this value is avaliable in the small power digital system.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.45 no.1
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• pp.81-85
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• 1996

Microwave dielectric properties of 0.15(B $a_{x}$S $r_{0.05}$)O-0.15(S $m_{2}$(1-y)N $d_{2y}$) $O_{3}$-0.7Ti $o_{2}$(x=o.9~0.1[mol.], y=6[m/o]) ceramics were investigated with BaO compositional ratio. Sintered density and resistivity of specimens were independent on the BaO compositional ratio. In the specimen with x=0.975[mol.], dielectric constant, quality factor and temperature coefficient of resonant frequency had good values of 76.52, 3001(at 3[GHz]) and +0.71[ppm/.ceg. C], respectively. By comparing with the stoichiometric compositions of 78.14, 2938(at 3[GHz])+14.19[ppm/.ceg. C], dielectric constant and quality factor showed similar properties, but the temperature coefficient of resonant frequency was highly improved. (author). refs., figs., tabs.s.s.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.6
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• pp.45-52
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• 1994

A microwave PIN diode 4-bit phase shifter is designed in X-band. A loaded-line type is used for the 22.5$^{\circ}$ and 45$^{\circ}$ bits, and a switched-line type for the 90$^{\circ}$and 180$^{\circ}$bits. The measured results show that the phase error and average insertion loss are less than $\pm$5.4$^{\circ}$and 7.2dB, respectively, over a 9.75~10.25GHz frequency band.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2000.05a
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• pp.105-108
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• 2000

The fundamental characteristics of the cavity-backed slot antenna at 2.45 GHz are analyzed with the method of moment for the use of a part of rectenna element. The proposed antenna has a rectangular-narrow slot on the upper surface and a feed post and a parasitic post inside of the cavity. The interior posts are perpendicular to the slot surface in order that the microwave circuits can be attached to the bottom of the cavity. Theoretical results shows that the maximum return loss of 50 dB at the input terminal of the antenna is achieved.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2000.05a
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• pp.152-155
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• 2000

This paper presents the characteristics of phase shifter which is operating at 2 GHz band and 12 GHz band. Two types of substrate stick with different dielectric constants are considered in these bands. Dielectric constants of microstrip feed crank line is 2.6. In the case of a small substrate stick with dielectric constant of 9 in the calculation, S21 phase is linearly varied at 1.98 GHz and 2.45 GHz, and variation of the shifting angle is about 20。. The angle of S21 phase shifting at 12 GHz band if calculated about 30。

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.4
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• pp.756-760
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• 2007

The $(1-x)Mg_4Ta_2O_9-xwt%TiO_2\;(x=5\sim20)$ microwave dielectric ceramics were prepared by solid-state reaction method and sintered at $1450^{\circ}C$. According to the X-ray diffraction data, the $Mg_4Ta_2O_9-xwt%TiO_2$ ceramics had main phase of $Mg_4Ta_2O_9$ and $MgTi_2O_5$ peaks were added by increasing of $TiO_2$ addition. Microwave dielectric properties of the $Mg_4Ta_2O_9-xwt%TiO_2$ ceramics were influenced by $MgTi_2O_5$ phase and properties of $TiO_2$. There was a little decrement of the quality factor from 116,800GHz of pure $Mg_4Ta_2O_9$ to 100,100GHz of 15wt% $TiO_2$ added one. But there was excellent improvement in temperature coefficient of the resonant frequency (TCRF) by addition of 15wt% $TiO_2$. The dielectric constant quality factor and TCRF of the $Mg_4Ta_2O_9-xwt%TiO_2$ ceramics sintered at $1450^{\circ}C$ were $13.08\sim16.41,\;45,000\sim165,410GHz,\;-24.82\sim+3.88ppm/^{\circ}C$, respectively, depending on the value of x. Simulated dielectric resonator (DR) with $Mg_4Ta_2O_9-15wt%TiO_2$ ceramics had the operating frequency of 11.97GHz and $S_{2,1}$ of -35.034dB.

• Electrical & Electronic Materials
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• v.9 no.1
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• pp.51-58
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• 1996

This report describes thick traveling-wave electrode formation and microwave transmission characteristics of the fabricated electrodes. Effective refractive indices of the microwave in the 5 micron CPW type traveling-wave electrodes is around 2.45 according to the results of time domain S parameter measurements. The bandwidth of the electrodes is about 10 GHz and could be extended to 15 GHz through optimization of the process. The developed process technique that enables plating of micropatterns upto 20 micron can be applied to broadband optical intensity modulators.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.75-76
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• 1998

Fly ash 70wt% contained green bodies were sintered by using a 2.45 Ghz microwave oven and their properties were investigated. Samples were sintered at 1,150$^{\circ}C$ and kept at that temperature up 50 minutes by 10 minutes intervals. Numerical analysis on the microwave heated system was carried out in order to figure out the heat transfer phenomena in the cavity.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.255-262
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• 1998

This study investigated the crystallization behaviour of sealing amorphous material heat-treated by conventional and microwave heating source. From X-ray diffraction and SEM analyses, it was shown that microwave heat-treated sample had well-grown $PbTiO_3$crystals and the high degree of crystallinity inspite of its heat-treated condition of shorten time and lower temperature as compared with a conventionally heat-treated sample. It was assumed that microwaves inhibit the nucleation of $PbTiO_3$crystal in nucleation stage, but promote the growth of $PbTiO_3$crystal above the critical size of crystal due to enhanced diffusion effect within the sample.