• Korean Journal of Materials Research
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• v.18 no.4
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• pp.169-174
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• 2008

The structural and electrical properties of amorphous $BaSm_2Ti_4O_{12}$ (BSmT) films on a $TiN/SiO_2/Si$ substrate deposited using a RF magnetron sputtering method were investigated. The deposition of BSmT films was carried out at $300^{\circ}C$ in a mixed oxygen and argon ($O_2$ : Ar = 1 : 4) atmosphere with a total pressure of 8.0 mTorr. In particular, a 45 nm-thick amorphous BSmT film exhibited a high capacitance density and low dissipation factor of $7.60\;fF/{\mu}m2$ and 1.3%, respectively, with a dielectric constant of 38 at 100 kHz. Its capacitance showed very little change, even in GHz ranges from 1.0 GHz to 6.0 GHz. The quality factor of the BSmT film was as high as 67 at 6 GHz. The leakage current density of the BSmT film was also very low, at approximately $5.11\;nA/cm^2$ at 2 V; its conduction mechanism was explained by the the Poole-Frenkel emission. The quadratic voltage coefficient of capacitance of the BSmT film was approximately $698\;ppm/V^2$, which is higher than the required value (<$100\;ppm/V^2$) for RF application. This could be reduced by improving the process condition. The temperature coefficient of capacitance of the film was low at nearly $296\;ppm/^{\circ}C$ at 100 kHz. Therefore, amorphous BSmT grown on a TiN substrate is a viable candidate material for a metal-insulator-metal capacitor.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.2
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• pp.147-151
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• 2009

A wideband correlator, with 45% relative bandwidth is proposed at the frequency range of 3.1-5.1GHz. The structures of the correlator components such as the delay line and the Wilkinson power divider are designed to be realized in transmission line form using the Agilent's Advanced Design System (ADS). The correlator made by using three unique wideband 3-dB couplers, rat-race coupler and one 3-dB wilkinson power divider to reach the required bandwidth. The insertion loss, amplitude imbalance and phase imbalance between ports are presented. The proposed correlator makes compact size better than correlator of conventional structure.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.2
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• pp.47-54
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• 1990

In this paper, we design the 4-bit phase shifter which have $22.5^{\circ},45^{\circ},90^{\circ}$ and $180^{\circ}$ phase shift by applying the loaded line and switched network phase shifter. Its phase shift is variable with changing of the stub and passive device parameters. The experiments show the 6.5 dB average insertion loss and $10^{\circ}$ average phase error at center frequency, 6GHz. The results of experiment agree well with the theories except $180^{\circ}$ phase shifter.

• Journal of the Korean Ceramic Society
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• v.40 no.4
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• pp.323-327
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• 2003

Microwave dielectric properties of (P $b_{0.4}$C $a_{0.6}$)[($Fe_{\frac{1}{2}}$N $b_{\frac{1}{2}}$)$_{1-x}$ (M $g_{1}$ 3/N $b_{2}$ 3/)x] $O_3$ (PCFMN) ceramics were investigated as a function of (M $g_{1}$ 3/N $b_{2}$ 3/)$^{4+}$ content (0.1$\leq$x$\leq$0.8). A single perovskite phase with the cubic structure was obtained through the given composition range. The unit cell volume was increased with (M $g_{1}$ 3/N $b_{2}$ 3/)$^{4+}$, due to the larger average ionic size of (M $g_{1}$ 3/N $b_{2}$ 3/)$^{4+}$ than that of ($Fe_{\frac{1}{2}}$N $b_{\frac{1}{2}}$)$^{4+}$ for B-site ion. Dielectric constant (K) and Temperature Coefficient of Resonant Frequency(TCF) of PCFMN ceramics were dependent on (M $g_{1}$ 3/N $b_{2}$ 3/)$^{4+}$ content due to the decrease of ionic polarizability and B-site bond valence, respectively. Qf value was decreased with (M $g_{1}$ 3/N $b_{2}$ 3/)$^{4+}$ content due to the decrease of grain size. Typically, K of 73.56, Qf of 5,074 GHz and TCF of -6.45 ppm/$^{\circ}C$ were obtained for the specimens with x=0.4 sintered at 125$0^{\circ}C$ for 3 h.125$0^{\circ}C$ for 3 h.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1778-1780
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• 2004

Microwave heating system of KSTAR consists of ECH and LHCD. ECH and LHCD offer the reliability of operation in the beginning of plasma formation and non-inductive current drive for long time steady state operation with maintaining MHD stability, respectively. LHCD demands 5 GHz of frequency and consists of c-band waveguide, 4-port circuitor, dry dummy load, dual directional coupler, E-bend, arc detector. Our system is a lineup type pulse modulator that has 45 kV of output pulse voltage, 90 A of pulse current, 4 us of pulse width. 1:4 step-up pulse transformer, 7 stages of PFN and thyratron tube (E2V, CX1191D) are used in this modulator. The purpose of this paper is to show the modulator design and experimental result.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.274-274
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• 2012

We have researched on controlling an electron temperature and a plasma collision frequency to study the effect of collisions on helicon plasmas. So, we have designed and constructed an electron cyclotron resonance (ECR) heating system in the helicon device as an auxiliary heating source. Since then, we have tried to optimize experimental designs such as a magnetic field configuration for ECR heating and 2.45GHz microwave launching system for its power transfer to the plasma effectively, and have characterized plasma parameters using a Langmuir probe. For improving an efficiency of the ECR heating with R-wave in the helicon plasma, we would understand an effect of R-wave propagation with ECR heating in the helicon plasma, because the efficiency of ECR heating with R-wave depends on some factors such as electron temperature, electron density, and magnetic field gradient. Firstly, we calculate the effect of R-wave propagation into the ECR zone in the plasma with those factors. We modify the magnetic field configuration and this system for the effective ECR heating in the plasma. Finally, after optimizing this system, the plasma parameters such as electron temperature and electron density are characterized by a RF compensated Langmuir probe.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.7
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• pp.419-423
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• 2015

Sintering, microstructure, thermal conductivity and microwave dielectric properties of xLiF-(1-x)MgO ceramics (x=0.03~0.10 mol) were investigated. The high density was obtained in the specimens of $x{\geq}0.06$, i.e., 0.04 LiF-0.96 MgO in mol, whereas the amount of 0.03 mol LiF was insufficient to densify. From the result that the contact flattening in the sintered specimen was observed, the densification occurred through the liquid-phase sintering. The specimen of x=0.06 showed the highest room-temperature thermal conductivity. Relative density, thermal conductivity, dielectric constant, and quality factor ($Q{\times}f$) of the specimen for x=0.06 sintered at $900^{\circ}C$ for 4 h were 97.8%, $39.2Wm^{-1}K^{-1}$, 9.45, and 14,671 GHz, respectively.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1609-1610
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• 2006

이 논문은 인위적으로 전자파를 발생시켜 이 전자파에 의한 반도체 소자의 피해 효과를 조사한 것이다. 동작주파수가 2.45 GHz인 마그네트론으로부터 발생되는 전자파는 끝단이 개방되어있는 도파관을 통해 자유공간으로 전파되고, 도파관 끝단으로부터 $30\;cm\;{\sim}\;50\;cm$인 지점에 반도체 소자들을 위치시켜 동작상태를 확인하였다. 시험에 사용된 피시험체인 반도채 소자로는 TTL과 CMOS 기반기술의 반도체를 사용하였고, LED 구동회로를 구성하여 LED의 점등 여부로 오동작 및 파괴 여부를 육안 식별하였다. 또한 시험 전후의 반도체 소자 표면을 제거 후 칩 상태를 SEM 분석하였다. 시험 결과 도파관 끝단으로부터 50 cm, 40 cm 떨어진 지점에 반도체 소자를 위치시키고 도파관 끝단에서 발생되는 전자파에 의한 반도체 소자의 피해는 전혀 없었다. 그러나 30 cm 떨어진 지점에서 오동작 및 파괴가 일어났다. 오동작 및 파괴가 일어난 시료의 칩 상태를 SEM 분석한 결과 칩 내부의 onchipwire의 용융으로 인한 파괴와 bondingwire의 완전파괴를 확인할 수 있었다. 위의 시험 결과는 인위적인 전자파 환경에서 반도체 소자의 결합 기구를 해석하는 기초 자료로 활용되며, 전자 장비들의 전자파 장해에 대한 이해에 도움이 되는 자료로 활용될 수 있을 것이다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.3
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• pp.508-512
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• 1998

The NTC thermistors were sintered by using microwave hybrid heating method at $1100^{\circ}C$~$1300^{\circ}C$ and those electrical properties were investigated. The obtained $B_{25^{\circ}C/85^{\circ}C}$ values from temperature dependence of electrical resisitivity were around 3100~3200 K which were almost the same values as conventionally sintered ones. Compared with conventional sintering process, this process could complete whole sintering process within 20 minutes. This the processing time and energy consumption could be reduced through this rapid heating by using microwave hybrid heating.t there were showed only two peaks, glycolide melting peak and lower molecular weight melting peak without lauryl alcohol. Conversion increased slowly with the reaction time up to 50 minutes, and then gave a sudden increase above that. The reaction time to disappear in glycolide melting peak during polymerization was shortened with the increase of lauryl alcohol content. Zero-shear viscosity of polyglycolic acid decreased with the increase of free acid content in glycolide.ssional energy and bending hysteresis increased. \circled3 Surface characteristics such as friction coefficient and thickness variation of highly shrinkage fabrics became relatively roughened state. \circled4 Since stiffened and roughened characteristics of highly shrinkage fabrics, drapabilities of them were significantly lowered. Additionally thermal insulation property of high shrinkage fabric was higher than that of low shrinkage fabric due to bulky and thickened feature. From the results, it is considered that the silk fabrics with high filling shrinkage have the good bulkiness and heat keeping properties and thus they have the suitable characteristics for high quality men's and women's formal garments.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.10
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• pp.51-59
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• 1998

($Na_{1/2}Ln_{1/2}$)$TiO_3$ceramics have a high relative dielectric constant and a positive temperature coefficient of resonant frequency ($\tau_f$)(where Ln represents a lanthanide: $La^{+3}$, $Pr^{+3}$, $Nd^{+3}$ and $Sm^{+3}$). On the other hand, $MgTiO_3$ ceramic has a high Qf value and a negative temperature coefficient. So We have investigated the microwave dielectric properties of $xMgTiO_3$-(1-x) ($Na_{1/2}Ln_{1/2}$)$TiO_3$. In these systems, there are no clues on solid-solution and secondary phase. There are mixed phases with $MgTiO_3$and ($Na_{1/2}Ln_{1/2}$)$TiO_3$ phases. Its dielectric characteristics (Qf, temperature coefficient and dielectric constant) are intermediate between ($Na_{1/2}Ln_{1/2}$)$TiO_3$ and $MgTiO_3$ and are predictable by the logarithmic mixing rule. The dielectric ceramic compositions temperature coefficient each approximates to zero at Ln=La, x=0.9, Ln=Pr, x=0.87, and Ln=Nd, x=0.84. At this time, there are Qf values in the range of 55,000 to 28,00GHz and relative dielectric constants in the range of 22 to 25.